Claims
- 1. A nanophase storage luminescence material of the general formula X/Y, wherein X is at least one guest and Y is a host.
- 2. The nanophase storage luminescence material of claim 1, wherein the host is selected from the group consisting of organic, inorganic, glass, crystalline, non-crystalline, porous materials or combinations thereof.
- 3. The nanophase storage luminescence material of claim 1, wherein the host is a nanoparticle.
- 4. The nanophase storage luminescence material of claim 3, wherein the nanoparticle is selected from the group consisting of semiconducting nanoparticles, insulating nanoparticles, conducting nanoparticles, and combinations thereof.
- 5. The nanophase storage luminescence material of claim 4, wherein the semiconductor nanoparticle is selected from the group consisting of sulfide, telluride, selenide, and oxide semiconductors.
- 6. The nanophase storage luminescence material of claim 5, wherein the semiconductor nanoparticle is selected from the group consisting of ZnxSy, ZnxSey, ZnxTey, CdxSy, CdxSey, CdxTey, PbxSy, PbxSey, PbxTey, MgxSy, CaxSy, BaxSy and SrxSy, wherein 0<x≦1, 0<y≦1.
- 7. The nanophase storage luminescence material of claim 6, wherein the semiconductor nanoparticle is ZnS.
- 8. The nanophase storage luminescence material of claim 5, wherein the semiconductor nanoparticle is represented by the general formula (M1−zNz)xA1−yBy, wherein M=Zn, Cd, Pb, Ca, Ba, Sr, Mg; N=Zn, Cd, Pb, Ca, Ba, Sr, Mg; A=S, Se, Te, O; B=S, Se, Te, O; 0<x≦1, 0<y≦1, 0<z≦1).
- 9. The nanophase storage luminescence material of claim 8, wherein the semiconductor nanoparticle is Zn0.4Cd0.4S.
- 10. The nanophase storage luminescence material of claim 8, wherein the semiconductor nanoparticle is Zn0.9S0.8Se0.2.
- 11. The nanophase storage luminescence material of claim 4, wherein the insulator nanoparticle is selected from the group consisting of halides, complex halides, silicates, phosphates.
- 12. The nanophase storage luminescence material of claim 11, wherein the insulator nanoparticle is selected from the group consisting of BaF2−xBrx, BaFy, SrBry, CaCly, BaBry wherein 0<x≦2, 0<y≦2.
- 13. The nanophase storage luminescence material of claim 12, wherein the insulator nanoparticle is BaF2.
- 14. The nanophase storage luminescence material of claim 11, wherein the insulator nanoparticle is represented by the general formula (MzA2−yBy, wherein M=Ca, Ba, Sr, Mg; A=F, Cl, Br, I, O; B=F, Cl, Br, I, O; 0<x≦2, 0<y≦2, 0<z≦1).
- 15. The nanophase storage luminescence material of claim 14, wherein the insulator nanoparticle is BaFBr.
- 16. The nanophase storage luminescence material of claim 14, wherein the insulator nanoparticle is BaFCl.
- 17. The nanophase storage luminescence material of claim 1, wherein the at least one guest is a rare earth ion.
- 18. The nanophase storage luminescence material of claim 1, wherein the at least one guest is two rare earth ions.
- 19. The nanophase storage luminescence material of claim 1, wherein the at least one guest is a transition metal ion.
- 20. The nanophase storage luminescence material of claim 19, wherein the transition metal ion is selected from the group consisting of Cu, Ag, Cr, Ni, and combinations thereof.
- 21. The nanophase storage luminescence material of claim 1, wherein the at least one guest is selected from the group consisting of transition ions, rare earth ions and combinations thereof.
- 22. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is at least one ZnS:Ag+ nanoparticle.
- 23. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is at least one BaFBr:Eu2+ nanoparticle.
- 24. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is at least one BaFCl:Eu2+ nanoparticle.
- 25. The nanophase storage luminescence material of claim 1, wherein the host is a porous matrix and the at least one guest is a nanoparticle.
- 26. The nanophase storage luminescence material of claim 25, wherein the porous matrix is a zeolite.
- 27. The nanophase storage luminescence material of claim 25, wherein the nanoparticle is ZnS.
- 28. The nanophase storage luminescence material of claim 25, wherein the nanophase storage luminescence material is ZnS/zeolite.
- 29. The nanophase storage luminescence material of claim 25, wherein the nanoparticle is AgI.
- 30. The nanophase storage luminescence material of claim 25, wherein the nanophase storage luminescence material is AgI/zeolite.
- 31. The nanophase storage luminescence material of claim 25, wherein the nanoparticle is Ag.
- 32. The nanophase storage luminescence material of claim 25, wherein the nanophase storage luminescence material is Ag/zeolite.
- 33. The nanophase storage luminescence material of claim 25, wherein the nanoparticle is CdTe.
- 34. The nanophase storage luminescence material of claim 25, wherein the nanophase storage luminescence material is CdTe/zeolite.
- 35. The nanophase storage luminescence material of claim 25, wherein the porous matrix is MCM-41.
- 36. The nanophase storage luminescence material of claim 25, wherein the nanophase storage luminescence material is AgI/MCM-41.
- 37. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material has a form of at least one crystal.
- 38. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is a powder.
- 39. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is a solid.
- 40. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is a powder.
- 41. The nanophase storage luminescence material of claim 1, wherein nanophase storage luminescence material is a film or thin film.
- 42. The nanophase storage luminescence material of claim 1, wherein the nanophase storage luminescence material is a colloidal solution.
- 43. A nanophase storage luminescence material wherein the nanophase storage luminescence material has a photostimulated luminescence.
- 44. A nanophase storage luminescence material of claim 43 wherein the nanophase storage luminescence material has a stimulation wavelength that is longer than the emission wavelength.
- 45. The nanophase storage luminescence material of claim 43, wherein a stimulation wavelength is from 400 nm to 5000 nm and an emission wavelength is from about 200 nm to about 2000 nm.
- 46. A nanophase storage luminescence material wherein the nanophase storage luminescence material is capable of switching from an initial state to a secondary state and back to the initial state.
- 47. A nanophase storage luminescence material of claim 46 wherein the switching process is controllable by a light or a ray.
- 48. A nanostructured image plate for use in a digital imaging system to store and to converting energy patterns (latent images) into digital signals, comprising:
a matrix; and a nanoparticle array operatively associated with the matrix, the nanoparticle array formed of photostimulated luminescence nanoparticles which cooperate to store energy indicative of latent images when the photostimulated luminescence nanoparticles are exposed to such energy patterns.
- 49. The nanostructured image plate of claim 48, wherein the photostimulated luminescence nanoparticles store the energy as trapped electrons and holes in the photostimulated luminescence nanoparticles.
- 50. The nanostructured image plate of claim 48, further comprising a covering positioned over the nanoparticle array, the covering constructed to permit light of certain energies to pass through the covering.
- 51. The nanostructured image plate of claim 48, wherein the nanoparticle array is applied to an exterior surface of the matrix.
- 52. The nanostructured image plate of claim 51, wherein the nanoparticle array is applied to the exterior surface via a layer-by-layer technique.
- 53. A method for converting energy patterns into digital signals, comprising the steps of:
exposing an image plate having a nanoparticle array supported by a matrix to an energy pattern, the nanoparticle array formed of photostimulated luminescence nanoparticles which cooperate to store energy indicative of the energy pattern; optically stimulating the photostimulated luminescence nanoparticles to release the stored energy and thereby provide luminescence due to electron-hole recombination; and converting the luminescence into digital signals indicative of the energy pattern.
- 54. The method of claim 53, wherein the step of optically stimulating is defined further as optically stimulating the photostimulated luminescence nanoparticles with a laser.
- 55. The method of claim 53, wherein the step of converting is defined further as measuring the luminescence from areas of the nanoparticle array using a detector.
- 56. A method for making a nanostructured image plate for use in a digital imaging system converting energy patterns into digital signals, comprising the steps of:
providing photostimulated luminescence nanoparticles capable of storing energy when the photostimulated luminescence nanoparticles are exposed to such energy; and applying the photostimulated luminescence nanoparticles to a matrix.
- 57. The method of claim 55, further comprising the step of applying a covering to the matrix so as to cover the photostimulated luminescence nanoparticles, the covering being constructed to permit energy to pass through the covering.
- 58. A nanostructured image plate constructed by the method of claim 55.
- 59. A nanostructured image plate constructed by the method of claim 56.
- 60. The nanostructured image plate of claim 48 wherein the energy pattern is selected from a group comprising an X-ray intensity pattern, or patterns of (α-ray, β-ray, γ-ray and neutrons.
- 61. A storage device, comprising:
a particle array including a plurality of particles, at least some of the particles being switchable between a first state and at least a second state where light emitted from the particles is different in the first state and the second state; a first writing light selectively emitting light of a first wavelength onto at least a portion of the particle array for switching the particles exposed to the light from the first state to the second state; a second writing light selectively emitting light of a second wavelength onto at least a portion of the particle array for switching the particles exposed to the light from the second state to the first state; and a probing light selectively emitting light of a third wavelength onto at least a portion of the particle array so as to cause particles exposed to the probing light to output signals; and a detector receiving the signals output by the particles.
- 62. An image plate for storing digital information, comprising:
a matrix; and a particle array supported by the matrix, the particle array including a plurality of particles, at least a portion of the particles switchable between a first state and at least a second state in response to exposure of such particles to light of predetermined wavelengths, the particles having a first emission in the first state, and a second emission in the second state wherein the first and second emissions are different.
- 63. The image plate of claim 61, wherein the particles forming the particle array are nanoparticles.
- 64. The image plate of claim 61, wherein the particles forming the particle array are photo luminescing particles.
- 65. The image plate of claim 61, wherein the first and second emissions are emission spectrums generated by exposure of such particles to light of a predetermined wavelength.
- 66. The image plate of claim 61, wherein the matrix is characterized as an optical storage disc.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of co-pending U.S. application Ser. No. 10/166,313, filed Jun. 6, 2002, entitled “UPCONVERSION LUMINESCENCE MATERIALS AND METHODS OF MAKING AND USING SAME.” This application also claims priority under 35 U.S.C. §119(e) to 1) the provisional patent application identified by U.S. Serial No. 60/356,542, filed on Feb. 11, 2002, entitled “REVERSIBLE OPTICAL PROCESSES AND OPTICAL STORAGE OF NANOPARTICLES;” and 2) the provisional patent application identified by U.S. Serial No. 60/313,236, filed Aug. 17, 2001, entitled “NANOPARTICLE PHOTOSTIMULATED LUMINESCENCE BASED OPTICAL STORAGE AND SENSORS.” The entire contents of all patent applications referenced herein are hereby expressly incorporated herein in their entirety by reference.
STATEMENT REGARDING FEDERALLY FUNDED RESEARCH
[0002] The Government owns certain rights in and to this application pursuant to (i) a grant from the National Science Foundation Grant No. DMI-0060254, (ii) a grant from the National Science Foundation Grant No. DMI-0132030, and (iii) an Air Force Office of Scientific Research Contract No. F49620-00-C-0058.
Provisional Applications (2)
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Number |
Date |
Country |
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60356542 |
Feb 2002 |
US |
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60313236 |
Aug 2001 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
10166313 |
Jun 2002 |
US |
Child |
10223764 |
Aug 2002 |
US |