Claims
- 1. A near-field super-resolution cover glass slip structure comprising:an optical transparent base substrate; a nano structured thin film layer capable of producing localized nonlinear near-field optical interactions covering said optical transparent base substrate; a first optical transparent dielectric thin film layer between said optical transparent base substrate and said nano structured thin film; and a second optical transparent dielectric thin film covering said nano structured thin film layer.
- 2. The near-field super-resolution cover glass slip structure of claim 1, wherein said optical transparent base substrate is made of SiO2 glass material and doped SiO2 glass material.
- 3. The near-field super-resolution cover glass slip structure of claim 1, wherein said optical transparent base substrate is made of transparent polymer material.
- 4. The near-field super-resolution cover glass slip structure of claim 1, wherein the composition of said first optical transparent dielectric thin film and said second optical transparent dielectric thin film can be selected from the group of dielectric material: ZnS—SiOx, SiOx or SiNx.
- 5. The near-field super-resolution cover glass slip structure of claim 1, wherein said first optical dielectric thin film layer and said second optical dielectric thin film layer can be a multiple layer structure.
- 6. The near-field super-resolution cover glass slip structure of claim 4, wherein said first optical dielectric thin film layer and said second optical dielectric thin film layer can be a multiple layer structure.
- 7. The near-field super-resolution cover glass slip structure of claim 1, wherein the ideal thickness of said first optical dielectric thin film layer is in the range of about 100 nm to 200 nm.
- 8. The near-field super-resolution cover glass slip structure of claim 4, wherein the ideal thickness of said first optical dielectric thin film layer is in the range of about 100 nm to 200 nm.
- 9. The near-field super-resolution cover glass slip structure of claim 1, wherein the ideal thickness of said second optical dielectric thin film layer is in the range of about 5 nm to 200 nm.
- 10. The near-field super-resolution cover glass slip structure of claim 4, wherein the ideal thickness of said second optical dielectric thin film layer is in the range of about 5 nm to 200 nm.
- 11. The near-field super-resolution cover glass slip structure of claim 1, wherein the composition structure of said nano structured thin film layer can be selected from the following elements: Zn, Si, Ni, Sb, Ag, Ge, Al, Cu, Pt, Co, Mn, Cr, Ti, Na, Ga, As, Se, In, Sn, Te and Au.
- 12. The near-field super-resolution cover glass slip structure of claim 1, wherein the composition structure of said nano structured thin film layer can be selected from the following oxidation materials: ZnOx, SiOx, GeOx, NiOx, SbOx, AlOx, AgOx, CuOx, CoOx, MnOx, CrOx, TiOx, GaOx, InOx, and SnOx.
- 13. The near-field super-resolution cover glass slip structure of claim 1, wherein said nano structured thin film layer can be an element, a compound, or a composite.
- 14. The near-field super-resolution cover glass slip structure of claim 11, wherein said nano structured thin film layer is an element, a compound, or a composite.
- 15. The near-field super-resolution cover glass slip structure of claim 1, wherein the ideal thickness of said nano structured thin film layer is typically in a range of about 5 nm to 100 nm.
- 16. The near-field super-resolution cover glass slip structure of claim 11, wherein the ideal thickness of said nano structured thin film layer is typically in a range of about 5 nm to 100 nm.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 91109862A |
May 2002 |
TW |
|
Parent Case Info
This nonprovisional application claims priority under 35 U.S.C. §119(a) on patent application Ser. No. 091109862 filed in TAIWAN, R.O.C. on May 13, 2002, which is herein incorporated by reference.
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