NON-IMMERSIVE DRY SINTERING STRATEGY FOR REALIZING DECENT METAL BASED ELECTRODES

Abstract

Disclosed are methods of sintering metal nanoparticles and methods of making conductive metal films.

Description

Claims

1. A method of preparing a conductive metal film, comprising: depositing a layer of metal nanoparticles, wherein the metal nanoparticles are isolated in the layer;depositing a dry sintering layer;sintering the layer of metal nanoparticles to form a sintered metal film; andoptionally drying the sintered metal film.

2. The method of claim 1, wherein a deposition sequence comprises: depositing the dry sintering layer; and then depositing the layer of metal nanoparticles on the dry sintering layer, ordepositing the layer of metal nanoparticles, and then depositing the dry sintering layer on the layer of metal nanoparticles.

3. A method of sintering of isolated metal nanoparticles into a smooth and conductive metal film, comprising: depositing a layer of metal nanoparticles;depositing the dry sintering layer; andoptionally after some time, drying the sintered metal film.

4. The method of claim 3, a deposition sequence comprises: depositing the dry sintering layer; and then depositing the layer of metal nanoparticles.

5. The method of claim 1, wherein said metal nanoparticles comprise nanocubes, nanosphere, and nanoparticles in any other shapes.

6. The method of claim 1, wherein said metal comprises one or more of Ag, Cu, and Au.

7. The method of claim 1, wherein said dry sintering layer comprise materials that provide hydrogen ions such as hydrogen-intercalated molybdenum oxide (HMO), hydrogen-intercalated vanadium oxide (HVO), PEDOT:PSS, or phosphomolybdic acid (PMA), which is dry and has no obvious solution after deposition.

8. The method of claim 1, wherein said dry sintering is performed when both layers are wet with liquid and particularly both layers are dry or in solid state without any liquid or solution attached on the layers, and wherein the dry state or solid state is achieved when almost all of the solvent in the layers is gone during or after deposition.

9. The method of claim 1, wherein the method comprises depositing the layer of metal nanoparticles on a substrate, or depositing the dry sintering layer on a substrate, and said substrate comprises one or more of the common substrates, such as bare glass, silicon wafer, metal film, polymer or flexible substrate, and device surfaces.

10. The method of claim 1, wherein the deposit of the layer of metal nanoparticles comprises: depositing metal nanoparticles solution on a substrate; wherein a solvent for dispersing metal nanoparticles can be one of the common solvents, such as hexane, octane, and toluene, and said metal nanoparticles deposition approach can be one of the common approaches, such as spin-coating, drop-casting, spray-coating, inkjet or screen printing, Mayer rod coating, and doctor blade coating techniques.

11. The method of claim 1, wherein the deposit of the layer of dry sintering layer comprises: depositing the dry sintering layer comprising a sintering material on a substrate; wherein said deposition approach can be one of the common approaches, such as spin-coating, drop-casting, spray-coating, inkjet or screen printing, Mayer rod coating, and doctor blade techniques, which ensures the resultant film is dry and there is no obvious solution after deposition; wherein the solvent for dispersing the sintering materials can be one of the common solvents, such as methanol, ethanol, 1-butanol, isopropanol, 1-butanol, DMF, ethyl acetate, and anisole.

12. The method of claim 1, wherein said drying can be accomplished by any methods such as vacuum drying, oven or hot plate drying, and natural volatilization.

13. The method of claim 1, wherein drying the sintered metal film is performed after some time after the sintered metal film is formed, said some time depends on the relative thickness of the metal film and the dry sintering layer, and for a 24 nm hydrogen-intercalated molybdenum oxide film and 29 nm silver nanoparticles film, the nanoparticles can be instantly sintered without waiting (0 s) after the deposition process.

14. The method of claim 1, wherein the process for forming said conductive metal film is an environmentally friendly process, which is carried out in air and mainly at room temperature, and no toxic chemical and by-product are required or produced during the process.

15. The method of claim 1, wherein the electrical conductivity of said conductive metal film is dramatically increased as compared to the as-deposited metal nanoparticle film.

16. The method of claim 1, wherein said conductive metal film has the advantages over conventionally thermal evaporated metal film, particularly in terms of the cost and time consumption.

17. A conductive metal film obtained by the method of claim 1.

18. The conductive metal film of claim 17, wherein it has a light reflection of greater than 70% in the red to near infrared region.

19. The conductive metal film of claim 17, wherein it has a sheet resistance of lower than 500 Ω/sq.

20. The conductive metal film of claim 17, wherein it has a root mean square (RMS) roughness of lower than 20 nm.

21. A solar cell, organic light emitting device, liquid crystal display, or thin-film transistor comprising the conductive metal film made according to claim 17.