Patent Application
20150078065
The present invention generally relates to the random access electronic memories or RAM, and more particularly those wherein storage is obtained by a reversible change in the resistance (R) of their internal structure, and which are then called RRAM or ReRAM.
At present, attempts are made to remedy, or at least very significantly reduce the existing performances and capacities discrepancies between, on the one hand, the volatile memories of the dynamic RAM type (DRAM) characterised by a very quick random access to any one of the stored data, and which are mainly used for the production of computer random access memories, and on the other hand, the non volatile memories having a very high capacity of the magnetic hard disk type or still the so-called FLASH electronic memories which also are non volatile and have a great capacity with, however, shorter access times than the DRAM, or even much slower times for the hard disks, and an at least partially sequential access to the data stored in both cases.
The new electronic memories are also expected to be easily integrated in the logic components of the integrated circuit (CI) type using these. For example, an application requiring to be able to combine a large number of logic circuits and of independent electronic memories is more particularly a so-called FPGA
circuit, the acronym for
field programmable gate array
which refers to a widely used type of logic circuit consisting in an array of logic functions (gate array) the logic functions of which can be programmed and the interconnections thereof after production (field programmable) from the information stored in a large number of individual memories positioned on the whole surface of the FPGA circuit.
A type of electronic memory attempting to totally meet these expectations, i.e.: high storage capacity, random access to the data, short access-to-data time, non volatility, compatibility of production with the logic circuits more particularly with those of the CMOS (complementary metal-oxide-semiconductor) type, low consumption, has been developed for a few years and are particularly interesting for the research and development teams working in this field. These are random access resistive memories globally called by their acronym ReRAM or RRAM. They are also often referred to by other acronyms more particularly referring to their operating mode, such as the CBRAM or conductive bridge RAM
wherein ¢conductive bridges
can be created or removed in each one of the memory cells so that their resistance and thus the information stored therein can be permanently, i.e. in a non volatile way, but reversibly, modified. This type of memory cell is also known as PMC and EMC, the respective acronyms for
programmable metallization cell
and
electrochemical metallization cell
, which refers to the production mode of the conductive bridges in a solid electrolyte sandwiched between metal electrodes.
One of the advantages of the CBRAMs is their facility of integration in the circuits and the CMOS technology. As a matter of fact, the production of CBRAM memory cell can be very advantageously realized upon completion of the steps of production of the complementary MOS transistors, i.e. during the final steps executed on an integrated circuits production line, the so-called BEOL
, the acronym for
back-end of line
, final steps during which the metal interconnections between transistors are executed at much lower temperatures than for the initial forming of the MOS transistors.
In the field of the resistive RAM of the CBRAM type, many innovations have already been provided by the research and development teams working on this subject.
For example, in an article presented in June 2010 at the VLSI Technology (VLSIT) Symposium
entitled
A novel TiTe buffered Cu—GeSbTe/SiO2 electrochemical resistive memory (ReRAM)
the authors describe a structure of the resistive RAM type which adds a
buffer layer
, in this case made of titanium/tellurium (TiTe). The buffer layer separates the layer intended to supply the copper ions which are used to provide a
conductive bridge
(CB) through a normally non conductive layer called here a memory layer and which is made of silicon dioxide (SiO2) in this case. The materials and the thicknesses of the layers are so selected as to enhance the reliability of the device disclosed and the authors say that they indeed noted a much higher thermal stability of the conductive bridge thus formed because of the presence of the buffer layer which prevents the diffusion and the dissolution of the copper ions after forming the conductive bridge. It should be noted here that the layer called the memory layer in this article is also often called a commutation layer or
switching layer
in other publications.
In another publication entitled Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes
presented in May 2010 at the
IEEE International Memory Workshop (IMW)
the authors describe a device of the CBRAM type, the layer of solid electrolyte of which is made of a double layer comprising a layer of a germanium and silicon alloy (GeSe) and a layer of tantalum pentoxide (Ta2O5). They more particularly noted that this enables a better confinement of the conductive bridges formed in such a double layer of solid electrolyte. It should be noted that, in this case, the conductive bridges are called CF, for
conductive filaments
.
It should however be noted that, in both solutions, the resistance windows i.e. the resistance ratios noted between the conductive and non conductive states of the memory structures studies remain lows. Besides, it would be very advantageous to be able to increase the resistance in the non conductive state so as to reduce the leakage currents so as to drastically limit the consumption of the devices using these.
In another example of publication which is an application for a patent filed with the American office of patents, published on Jul. 5, 2012 with number US 2012/0168705 and entitled Bipolar Switching Memory Cell With Built-in “On” State Rectifying Current-Voltage Characteristics
the inventors also describe a device of the resistive RAM type which has a particularity in that a diode in series with each cell is obtained through the selection of materials and the structure of the layers used. A non ohmic current-voltage (IV) behaviour, of the rectifying type, can then be noted when reading a memory cell. As a matter of fact, when a cell is in an “on” or conductive state, a conductive filament is present which has been formed in a layer of solid electrolyte from metal ions from one of the electrodes. The metal filament is then in contact with a thin insulating layer to form a metal-insulator-metal or MIM structure. A tunnel effect barrier is thus created, which makes it possible to obtain a rectifying behaviour IV of the Schottky diode type.
Although the decision of introducing a diode in series with the memory cell may be advantageous for some applications, it should be noted here that it generally is a significant drawback, specifically when it comes to reading the content of a resistive memory cell which has been programmed. As shown in
It should be noted here that the discrimination by the reading circuit of the resistive levels stored may be all the more difficult since the ratios of resistances between the conductive resistive state, generally noted RON
, and the non conductive state, generally noted
ROFF
, may, as mentioned above, be relatively low according to the considered memory structures.
It would thus be particularly advantageous to provide a CBRAM compatible with the steps of production of said BEOL of a standard line of production of integrated circuits and which, at least partially enhances, the above mentioned advantageous characteristics of the memories of the RRAM type.
One objective of the present invention more particularly aims at providing a CBRAM structure having a non conductive state with a very high resistance so as to participate in reducing the leakage currents of the memory cells and the power consumption of the devices using these.
Another objective of the present invention is to enable the reading of the memory cells with of the low reading voltages so as to reduce the consumption of the device.
The present invention aims at reaching at least one of these objectives.
The other objects, characteristics and advantages of the present invention will be better understood when reading the following description and examining the appended drawings. Other advantages may of course be integrated therein.
According to one embodiment, the invention relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer. Said resistive memory cell is able to be electrically modified so as to switch from a first resistive state (HRS state) to a second resistive state (LRS state) wherein the resistance (RON) of the memory cell is at least ten times and preferably at least 100 times smaller than the resistance (ROFF) of the memory cell in the HRS state, in the LRS state the first electrode being so arranged as to supply metal ions intended to form at least a conductive filament through said commutation layer in order to obtain the LRS state, with the first and second electrodes with the solid electrolyte then being able to form a metal-insulator-metal (MIM) structure made conductive when the filament is formed. The memory cell is so configured that the switching from the HRS state to the LRS state is carried out by applying a VSET voltage to the memory cell and the switching from the LRS state to the HRS state being carried out by applying a VRESET voltage to the memory cell. In the LRS state the memory cell is conductive for a range of voltages between 0 Volts and
This solution gives the made conductive MIM structure a conductive current-voltage (IV) behaviour more particularly for low voltages corresponding to the reading voltages.
The memory cell according to the invention has a particularly high ROFF/RON ratio thus enabling an accurate and easy reading. Besides, the high value of ROFF makes it possible to significantly reduce the leakage currents. In addition, the value of RON remains very low, which enables to use low reading voltages.
Optionally, the memory cell according to the invention comprises at least any one of the following characteristics separately or in combination.
According to one embodiment, the invention relates to a microelectronic device comprising a memory cell array according to the invention.
According to one embodiment, the invention relates to a method for programming a resistive non volatile memory cell array according to the invention. Said memory cell are initially in a first resistive state (original HRS) and the solid electrolyte is able to be electrically modified so as to switch the memory cell from the original HRS state to a second resistive state (LRS) wherein the resistance of the memory cell is less than the resistance of the memory cell in the original HRS state. The method comprises the following steps:
The memory cell has an original resistive state (original HRS) at the end of the method of production of the cell and before any step of programming the cells. The original resistive state is thus used as a functional resistive state. The device thus comprises reading circuits so configured as to detect a difference of resistance between the original resistive state (original HRS) and said second resistive state (LRS). The resistance of the cells in the original HRS state is at least ten times and preferably at least one hundred times greater than the resistance of the cells in the LRS state.
Optionally, the method according to the invention comprises at least any one of the following steps or characteristics taken separately or in combination.
According to another embodiment, the invention relates to a resistive non volatile memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, the first electrode being so arranged as to supply metal ions intended to make conductive said commutation layer, with the first and second electrodes with the solid electrolyte forming a metal-insulator-metal (MIM) structure made conductive when said commutation layer has been made conductive, the cell being characterised in that the metal materials composing the two electrodes are so selected as to obtain a conductive current-voltage (IV) behaviour of the MIM structure made conductive.
Advantageously, the difference between the value of the work function of the metal material composing the first electrode and the value of the work function of the metal material composing the second electrode does not exceed 0.5 electronvolts (eV) and preferably does not exceed 0.25 electronvolts (eV).
According to another embodiment, the invention relates to a resistive memory cell comprising two metal electrodes located on either side of a solid electrolyte including a commutation layer and a dielectric layer. That of the two electrodes which is in contact with the commutation layer is called an active one and is used to supply metal ions intended to form a conductive filament through said commutation layer, a structure wherein that of the two electrodes in contact with the dielectric layer is called an inert one and enables to form a conductive metal-insulator-metal (MIM) structure after forming the filament. Preferably, the metal materials composing the two electrodes are so selected as to obtain a conductive current-voltage (IV) behaviour of the conductive MIM structure. Preferably, the metal materials composing the two electrodes are so selected as to obtain an ohmic current-voltage (IV) behaviour of the conductive MIM structure.
The goals, objects, and the characteristics and advantages of the invention will be better understood when reading the detailed description of one embodiment of the latter, which is illustrated by the following appended drawings wherein:
a and 3b illustrate the layered structure of a ReRAM cell according to the invention comprising a solid electrolyte including a thin insulating layer.
a to 4d show the values of current obtained in the conductive and non conductive states for two different thicknesses of the insulating layer of the solid electrolyte.
a to 5c show experimental results obtained with the devices according to the invention.
The appended drawings are given as examples and do not intend to restrict the invention. They are schematic principle illustrations intended to facilitate understanding the invention and do not necessarily comply with the scale of the practical applications. In particular, the relative thicknesses of the different layers and films are not representative of reality.
It should be noted that, in the scope of the present invention, the words on
,
overlying
or
underlying
or the equivalent thereof do not necessarily mean
in contact with
. Thus, for example, the deposition of a first layer onto a second layer, does not necessarily mean that the two layers are directly in contact with each other, but this means that the first layer at least partially covers the second layer while being either directly in contact therewith, or separated therefrom by another layer or another element.
As will be explained in greater details hereunder, the invention specifically relates to obtaining a conductive behaviour IV which will make it possible to determine, with low or even very low reading voltages, the content which has been programmed. Besides, such reading will be facilitated by the simultaneous obtaining of a large window of resistances, i.e. a high, or even a very high, ratio between the RON and ROFF resistances.
Additionally, RESET
130 and
SET
140 voltages which are, necessarily, higher than the voltages applied 220 for reading and which must not, of course, affect the memory content which can be all the more easily obtained since the reading voltage may be low.
To obtain the behaviour illustrated in high resistance state
in order to obtain as high as possible a ROFF value (the ROFF resistance corresponds to the resistance of the cell in the HRS state). This must be obtained without having to increase the operation voltages which must specifically remain compatible with the CMOS technology generally used to implement the associated logic functions.
For this purpose, the structure 300 of a memory device according to the invention comprises a solid electrolyte bilayer: 320 and 330. The layer 320 constitutes the resistive commutation layer. It is directly in contact with the upper metal electrode 310. The upper electrode, in the exemplary representation of active
electrode since it is the source of metal ions which make it possible to form a conductive filament in the commutation layer 320. The dielectric layer 330 is intended if not to eliminate, at least to significantly reduce the leakage currents which would otherwise be established with the lower electrode 340 which is, contrary to the preceding one, an
inert
electrode of the device, i.e. the one which is not intended to supply the metal ions.
The operation principle of a CBRAM lies on the reversible formation of a conductive filament (CF) 350 from the metal ions, for example silver (Ag+) or copper (Cu+), generated by the material composing the upper electrode 310, the so-called active one. The filament is formed, through the solid electrolyte which the so-called commutation layer 320 is made of. The solid electrolyte is typically chalcogenide or an oxide of a transitional metal. For example germanium disulphide (GeS2) is used for the commutation layer. The lower metal electrode 340, the so-called inert one, is typically made of tungsten (W) or tantalum (Ta). The switching from the low resistance state 250 or LRS, the acronym for low resistance state
(the corresponding RON resistance is the resistance of the cell in the LRS state), to the high resistance state 240 or HRS, and reciprocally, and as shown in
anode
, which oxidises and generates the silver or copper (Ag+, Cu+) ions according to the material the electrode is made of. The ions migrate to the inert electrode 340, also called the
cathode
, where they are reduced. They generate, in the solid electrolyte, a nucleation process, which leads to the forming of a conductive filament rich, for example in silver or copper, which switches the device to the LRS state. When the polarity of the voltage applied 130 to the terminals of the electrodes of the device is reversed, during a RESET operation, the conductive filament 350 is in turn oxidised and generates the ions until the latter is dissolved, which switches back the device to the HRS state.
A memory cell according to the invention is thus more particularly made of two layers of a solid electrolyte: one 320, so-called the commutation layer, is typically made of germanium disulphide (GeS2) having a thickness 321 between 20 and 150 nanometres (or nm, 10−9 metre); the other one 330, prevents leakage currents from forming, which would otherwise occur through the commutation layer. It is advantageously made of hafnium oxide (HfO2) having a thickness 331 between 1 and 5 nm. This layer is typically deposited using a so-called ALD method, the acronym for atomic layer deposition
wherein layers having a monatomic thickness are successively deposited.
As mentioned above, the layer 330 made of HfO2 and optionally of other materials such as silicon dioxide (SiO2), tantalum pentoxide (Ta2O5), zirconium oxide (ZrO2), silicon nitride (Si3N4), makes it possible to increase the ROFF/RON ratio, i.e. the window of resistances between the conductive and non conductive states, without degrading the programming voltages so that these remain compatible with the technology used for the logic circuits associated, for example, with the CMOS technology.
As regards the operation of a device according to the invention, it should be noted that the Ag+ or Cu+ ions require only low energies to establish the connections with the atoms of the material composing the commutation layer 320, i.e. with a chalcogenide or an oxide of a transitional metal. A conductive filament 350, for example rich in silver, is thus easily generated through the commutation layer made, for example, of GeS2, provided that high enough a voltage is applied to the upper electrode 310. On the contrary, high energies are required to establish the connections between the silver atoms and those of a material having a high permittivity such as HfO2 which for example the layer 330 is made of. Consequently, there is no dissolution of the silver atoms through this layer, which participates in a stable formation of the conductive filament.
As already mentioned above, the operating principle of the structure of the layers 300 forming a memory cell according to the invention lies on the reversible forming of a conductive filament (CF) 350 from the metal ions, for example Ag+, which diffuse through a solid electrolyte 320, for example of GeS2, whereas there is no diffusion of these ions through the underlying layer 330 made, for example, of HfO2 or of one of the other materials mentioned above.
In the LRS state the upper metal electrode 310, through the conductive filament, then comes in contact with the thin insulating layer 330 to form, with the lower electrode 340, a sandwich of layers of the metal-insulator-metal (MIM) type which has the characteristics of a tunnel effect barrier to which is normally conductive in the conditions of utilisation of the device.
It should be noted here that it is important for the selection of the metal materials of the upper and lower electrodes to be such that they will not have, in the above MIM structure, a rectifying effect, so that the obtained behaviour is the one described in
For example, the silver or copper (Ag, Cu) couple, on the one hand, and tungsten (W) on the other hand, which, respectively, have a work function of 4.7 electronvolts (eV) and of 4.5 eV, are compatible. Each metal of the selected couple must not have a work function different by more than 0.35 eV and preferably by more than 0.25 eV from the other one. The materials for the two electrodes must however be different, and one of the electrodes has to be inert.
It should be noted here that all the couples of materials disclosed by the publication US 2012/0168705, cited in the preamble of the description, cannot all claim the forming of a diode, against the disclosure in this publication. The selection of the materials as provided by the present invention, and more particularly the selection of the materials of the couple of electrodes, specifically aims at avoiding forming a diode and a rectifying effect which would be prejudicial to the applications considered by the invention. More particularly, the publication US 2012/0168705 provides structures wherein, in the LRS state the memory cell is not conductive for a range of voltages between 0 Volts and VRESET. This selection of materials is possible, based on the work function of the materials considered, as mentioned above. The development of the present invention thus required to go against the teachings of the publication US 2012/0168705.
More generally, the properties of the stack must be so adjusted that the resistance of the MIM capacity is of the order of the target RON resistance of the memory in the LRS state. Typically, such RON resistance is lower than 80 kOhms. Preferably, it ranges from 2 to 10 kOhm, which is of the order of magnitude of the resistances aimed at in the state switching from a memory according to the state of the art without an intermediary dielectric layer. Such RON resistance is controlled by the MIM stack, by setting, in particular, the following parameters:
In the LRS state the memory cell is thus conductive for a range of voltages between 0 Volts and
This range comprises the negative voltages from 0 Volts to
This conductive behaviour even extends beyond
and typically up to 0.8 VRESET and even almost up to VRESET as clearly shown in
In the HRS state the metal of the upper electrode 310 is separated from the insulating material forming the layer 330 by the material of the commutation layer 320 which is, for example, GeS2, a material having the properties of a semi-conductor.
It has been noted that the programming condition, i.e. the conditions for forming a conductive filament 350 and of the dissolution thereof, are mainly determined by the thickness 321 of the GeS2layer 320, whereas they are practically independent of I the thickness 331 of the layer 330 made, for example of HfO2.
a to 4d show the results of simulation of the memory structure 300 according to the invention.
The simulation relates to the sandwich of layers and of materials illustrated in
It should be noted that the current in the conductive state is of the order of a few tenths of millampere (mA) 410 for the two thicknesses of the HfO2 layer (2 and 1 nm). No significant difference can thus be noted in the value RON according to the thickness 331 of the layer 330.
In the non conductive state, a high influence of the thickness of the HfO2 layer can be noted, on the contrary. As a matter of fact, it can be noted that the current in the non conductive state is weaker (10-10) 420 by two orders of magnitude when the HfO2 layer is 2 nm thick with respect to the current corresponding to the 1 nm (10-8) layer 430. The value ROFF thus strongly depends on the thickness 331. An increase in the thickness of the dielectric layer thus makes it possible to strongly increase ROFF without degrading the ROFF/RON ratio. A thickness between 1 and 8 nm and preferably between 2 and 6 nm makes it possible to reach a good compromise, and an excessive thickness would be prejudicial since it would lead to an increase in the value of resistance RON of the LRS state beyond the target value. As a matter of fact, it could be noted that the insulating layer 330 controls the value of RON.
When the memory is in the resistive state, the impact of the HfO2 layer on the conduction is amplified, and results in an increase in the value of the resistance of the memory in the insulating state ROFF. As a matter of fact, when the memory is in the insulating state:
a to 5c show the experimental results of resistive memory cells according to the invention.
a is a picture taken with a system of transmission electron microscopy (TEM) which shows a device according to the invention produced with the materials shown in the
b is a diagram showing the current voltage (IV) characteristics of the following structures:
The strong influence of the presence or the absence of the HfO2 layer and the thickness thereof on the current in the HRS state 240 of the device and, on the contrary, the absence of remarkable change in the resistance in the LRS state 250 can be noted once again.
It should be noted here that the current scale on the Y axis is logarithmic and the currents are expressed in absolute value, which should be taken into account when comparing with
c shows the evolution of the resistances RON and ROFF according to the number of programming cycles. As already noted above, the presence or the absence of the HfO2layer and of the thickness thereof only slightly affects or even does not affect the value RON 560 which is always of less than 104 Ohms. A significant influence of the HfO2 layer can be noted, though, on the ROFF resistances. The presence of this layer, with a thickness of 2 nm, makes it possible to obtain a ROFF/RON ratio 570 of approximately 106.
The ReRAM devices according to the invention can thus be very advantageously used in numerous applications wherein the leakage currents and/or the consumption, have to be strictly controlled, such as for example in the so-called embedded systems. The high resistance ROFF obtained as well as the conductive behaviour (230) RON when the device is conductive enable a low voltage measurement of the content of the memory cell according to the invention, which participates in reducing the consumption of the devices using these.
The applications of the invention more particularly relate to the user-programmable gate arrays of the FPGA type which are widely used for designing the systems and developing prototypes because they can be reconfigured after production. The FPGA are very flexible and offer low development risks, short marketing times and reasonable costs for small volumes of production.
The FPGA are typically provided as an array of logic blocks comprising commutation blocks and connexion blocks which make it possible to specifically interconnect the logic blocks for a given application. The assembly is programmable and the configuration is memorised in memories associated with the various blocks.
The non volatility of the resistive memories is a important asset, since it is no longer necessary to load the configuration upon each voltage application. Additionally, the memory elements of a FPGA can then be typically of the 1T-2R type, i.e. these simply consist of a transistor and two programmable resistances forming a dividing bridge which may be in two states. When maintaining one or the other of the resistances in the HRS state, as the ROFF value of a resistive memory cell according to the invention is high, even very high, very weak leakage currents and a low consumption are provided in the utilisation conditions.
The resistive state as obtained upon completion of the production of the memory cell and prior to any application of a voltage to the memory cell aiming at modifying the resistance thereof is called an original resistive state (original HRS) or pristine
.
This resistive original HRS state has a particularly high original resistance ROFF. It can be noted that this ROFF original resistance is even higher than the resistance of the resistive state (programmed HRS) obtained after forming a filament and after eliminating this filament. This resistive state obtained after forming a filament and after eliminating this filament can be called a highly resistive programmed state (programmed HRS). It has a ROFF programmed resistance. Typically:
original ROFF>102 programmed ROFF and
original ROFF>107 RON.
The invention provides for an advantageous programming mode wherein the original HRS state is used in the functional mode. The array of memory cells is thus programmed by switching a selection of cells from the original HRS state to the LRS state. The other cells are kept in the original HRS state, specifically during the phases of reading. The reading circuits associated with the array will easily identify whether the resistance of the cell is in the LRS state or in the original HRS state. This programming mode is very advantageous when applied to the FPGA for example. Besides, the original HRS state reveals very stable over time, during the reading cycles and when submitted to a relatively high temperature.
To summarise, the invention provides for a new resistive RAM cell which makes it possible to significantly increase the ROFF/RON ratio without degrading the programming conditions so that they remain compatible with the standard CMOS technology more specifically for the FPGA applications.
The invention is not limited to the embodiments described above, but extends to all the embodiments within the scope of the claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 13 58989 | Sep 2013 | FR | national |
