Claims
- 1. An apparatus for processing a wafer, comprising:
- a) a flexible membrane having an adhesive first surface and an opposing second surface;
- b) a frame supporting said flexible membrane;
- c) support means to support the wafer closely proximate said flexible membrane adhesive first surface; and
- d) gas generating means for directing gas against said membrane second surface to increase adhesion of said membrane to said wafer, said gas generating means comprises gas directing means for directing said gas stream from proximate center of said wafer outwardly.
- 2. The apparatus as specified in claim 1 wherein said gas generating means directs said gas in a concentrated stream to concentrate a force upon said membrane second surface.
- 3. The apparatus as specified in claim 1 wherein said gas directing means directs said gas stream in a continuous spiral path outwardly from said center of said wafer.
- 4. The apparatus as specified in claim 3 wherein said spiral path has a width such that the path overlaps along adjacent rings.
- 5. The apparatus as specified in claim 1 further comprising means to heat said gas.
- 6. The apparatus as specified in claim 1 wherein said gas directing means comprises means to rotate said frame and means to linearly advance said gas generating means from above a center of said wafer outwardly.
- 7. The apparatus as specified in claim 1 wherein said support means is positioned under said frame and said membrane adhesive surface faces downwardly toward the wafer supported by said support means.
- 8. A method of securing a wafer to a flexible adhesive membrane having an adhesive first surface and an opposing second surface, comprising the steps of:
- a) placing a wafer proximate said adhesive first surface; and
- b) directing a gas jet against said membrane second surface proximate said wafer to increase adhesion of said membrane adhesive first surface to said wafer, wherein said gas is directed from proximate a center of said wafer outwardly.
- 9. The method as specified in claim 8 wherein said gas is directed in a spiral path.
- 10. The method as specified in claim 9 wherein said spiral path has a width such that said path overlaps itself.
- 11. The method as specified in claim 8 wherein said gas is heated.
- 12. The method as specified in claim 8 wherein said gas is concentrated into a stream as it is directed against said membrane.
- 13. The method as specified in claim 8 wherein said wafer is inverted and positioned below said membrane adhesive first surface, and said gas is directed from above against said membrane second surface.
- 14. The method as specified in claim 9 comprising the step of rotating said wafer and said membrane as said gas jet is linearly advanced from a center of said membrane outwardly to define said spiral path.
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims benefit of Provisional Application Ser. No. 60/034,831, filed Dec. 31, 1996.
Cross reference is made to the following co-pending patent applications, each being assigned to the same assignee as the present invention and the teachings included herein by reference:
US Referenced Citations (3)