Claims
- 1. A method comprising:
defining a pair of spaced apart floating gates over a substrate; forming a stacked control gate over each floating gate; and forming a drain and a pair of sources by implantation using said stacked control gates as a mask.
- 2. The method of claim 1 including using said control gates to protect said floating gates from said implantation.
- 3. The method of claim 1 including self-aligning said sources and drain to both of said control gates.
- 4. The method of claim 1 including using substrate hot electron injection to charge said floating gates.
Parent Case Info
[0001] This is a continuation-in-part of U.S. patent application Ser. No. 09/443,360 filed Nov. 15, 1999, which is a division of U.S. patent application Ser. No. 09/189,249, filed Nov. 10, 1998, which is a continuation-in-part of U.S. patent application Ser. No. 08/838,854 filed Apr. 11, 1997.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09189249 |
Nov 1998 |
US |
Child |
09443360 |
Nov 1999 |
US |
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
09443360 |
Nov 1999 |
US |
Child |
09919003 |
Jul 2001 |
US |
Parent |
08838854 |
Apr 1997 |
US |
Child |
09189249 |
Nov 1998 |
US |