Claims
- 1. A level shifter circuit for converting an input signal having a first voltage into an output signal having a second voltage, the level shifter circuit comprising:
- an input terminal for receiving the input signal;
- an output terminal for outputting the output signal;
- a power terminal for receiving the second voltage;
- a first PMOS transistor having a first current electrode connected to the power terminal, a gate connected to the output terminal, and a second current electrode;
- a second PMOS transistor having a first current electrode connected to the power terminal, a second current electrode connected to the output terminal, and a gate;
- a first invertor having an input electrode connected to the input terminal and an output electrode;
- a first NMOS transistor having a first current electrode connected to the second current electrode of the first PMOS transistor and the gate of the second PMOS transistor, a second current electrode connected to the output electrode of the first invertor, and a gate for receiving a shut off signal;
- a second NMOS transistor having a first current electrode connected to the output terminal, a second current electrode connected to a third voltage, and a gate connected to the output electrode of the first invertor; and
- a circuit for generating the shut off signal, wherein the circuit generates the shut off signal having the first voltage when the second voltage is greater than the first voltage, and generates the shut off signal having the second voltage when the second voltage is less than the first voltage.
- 2. The level shifter circuit according to claim 1, wherein the first voltage is a power supply voltage and the second voltage is a voltage less than the first voltage.
- 3. The level shifter circuit according to claim 1, wherein the first voltage is a power supply voltage and the second voltage is a voltage higher than the first voltage.
- 4. The level shifter circuit according to claim 3, wherein the circuit comprises:
- a comparator for comparing the first voltage and the second voltage to generate a comparison result as a comparison signal;
- a first driver for driving the input terminal with the second voltage in response to the comparison signal; and
- a second driver for driving the input terminal with the first voltage in response to the comparison signal.
- 5. The level shifter circuit according to claim 4, wherein the comparator comprises:
- a first voltage divider for dividing the first voltage;
- a second voltage divider for dividing the second voltage;
- a differential amplifier circuit for comparing the outputs of the first and second voltage dividers; and
- a second invertor for inverting an output signal of the differential amplifier circuit to output the comparison signal.
- 6. The level shifter circuit according to claim 5, wherein the first driver comprises:
- a level shifter for converting a voltage of the comparison signal into one of the second voltage and the ground voltage; and
- a pull up transistor for pulling the input terminal up to the second voltage in response to the level shifter.
- 7. The level shifter circuit according to claim 5, wherein the second driver comprises:
- a third invertor for receiving the comparison signal; and
- a pull up transistor for pulling the input terminal up to the first voltage in accordance with the output signal of the third invertor.
- 8. The level shifter circuit according to claim 1, wherein the third voltage is one of a ground voltage and a negative voltage.
Priority Claims (1)
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Date |
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97-51632 |
Oct 1997 |
KRX |
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Parent Case Info
This application is a divisional application of "NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH A LEVEL SHIFTER CIRCUIT," by Hwi-Taek Chung, et al., Ser. No. 09/167,534, filed on Oct. 7, 1998, now U.S. Pat. No. 6,101,126 the contents of which are herein incorporated by reference in its entirety.
US Referenced Citations (1)
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5822253 |
Lines |
Oct 1998 |
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Divisions (1)
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167534 |
Oct 1998 |
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