Address circuits Decoders Word-line control circuits

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GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/08Address circuits Decoders Word-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory devices having cell over periphery structure, memory package...
- Patent number 12,224,277
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Yonghyuk Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
All level coarse/fine programming of memory cells
- Patent number 12,224,012
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,224,013
- Issue date Feb 11, 2025
- SK hynix Inc.
- Jae Woong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with concurrent sub-block programming
- Patent number 12,224,011
- Issue date Feb 11, 2025
- SanDisk Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and voltage control method for semicon...
- Patent number 12,224,018
- Issue date Feb 11, 2025
- Kioxia Corporation
- Xu Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Read level compensation for partially programmed blocks of memory d...
- Patent number 12,224,017
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Nagendra Prasad Ganesh Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and memory system
- Patent number 12,224,020
- Issue date Feb 11, 2025
- Kioxia Corporation
- Kenro Kikuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with leakage current verifying circuit for minimizing...
- Patent number 12,224,021
- Issue date Feb 11, 2025
- Winbond Electronics Corp.
- Koying Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device, storage device including the same, and...
- Patent number 12,217,802
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Parallelized defect detection across multiple sub-blocks in a memor...
- Patent number 12,217,799
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Paing Z. Htet
- G11 - INFORMATION STORAGE
Information Patent Grant
Bias voltage schemes during pre-programming and programming phases
- Patent number 12,217,801
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Vinh Q. Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 12,219,772
- Issue date Feb 4, 2025
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory chip and semiconductor package including the same
- Patent number 12,219,774
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Min Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast two-sided corrective read operation in a memory device
- Patent number 12,211,560
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and read recovery method thereof
- Patent number 12,211,565
- Issue date Jan 28, 2025
- SK Hynix Inc.
- In Jong Jang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device
- Patent number 12,211,557
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kyosuke Sano
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic gate steps for last-level programming to improve write perf...
- Patent number 12,211,563
- Issue date Jan 28, 2025
- Intel Corportaion
- Sagar Upadhyay
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase operation with electron injection for reduction of cell-to-ce...
- Patent number 12,211,548
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent slow-fast memory cell programming
- Patent number 12,211,552
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and program operation thereof
- Patent number 12,211,554
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kaijin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory system, and program method thereof
- Patent number 12,211,555
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- XiangNan Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Double program debug method for NAND memory using self-verification...
- Patent number 12,211,566
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Youxin He
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and operating method of storage controller
- Patent number 12,211,553
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Won Hee Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Wordline or pillar state detection for faster read access times
- Patent number 12,205,653
- Issue date Jan 21, 2025
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC programming techniques in a memory device
- Patent number 12,205,654
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for reading memory device and memory device
- Patent number 12,205,652
- Issue date Jan 21, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques to reduce programming stress in a memory device
- Patent number 12,205,647
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Grant
Pump skip for fast single-level cell non-volatile memory
- Patent number 12,198,765
- Issue date Jan 14, 2025
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Control method and system in 3D NAND systems
- Patent number 12,198,750
- Issue date Jan 14, 2025
- Yangtze Memory Technologies Co., Ltd.
- Daesik Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method for performing a partial program...
- Patent number 12,198,763
- Issue date Jan 14, 2025
- SK hynix Inc.
- Sung Hyun Hwang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY D...
- Publication number 20250053317
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Hyungseok Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE AND METHOD TO GENERATE BIAS VOLTAGES IN NON-VOLATILE MEMORY
- Publication number 20250054552
- Publication date Feb 13, 2025
- STMicroelectronics International N.V.
- Vikas RANA
- G11 - INFORMATION STORAGE
Information Patent Application
STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...
- Publication number 20250054556
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIALLY PROGRAMMED BLOCK PADDING OPERATIONS
- Publication number 20250054549
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Nagendra Prasad Ganesh Rao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20250054553
- Publication date Feb 13, 2025
- KIOXIA Corporation
- Tsukasa TOKUTOMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE
- Publication number 20250056796
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Won Geun CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING FLASH MEMORY AND CMOS LOGIC CIRCUITRY
- Publication number 20250046375
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Giulio Albini
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH HIGH PERFORMANCE READ
- Publication number 20250046386
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS
- Publication number 20250046382
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Kosuke YANAGIDAIRA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...
- Publication number 20250046385
- Publication date Feb 6, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF PERFORMING A PROGRAMMING OPERATION
- Publication number 20250046376
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Ying CUI
- G11 - INFORMATION STORAGE
Information Patent Application
MIXED WRITE CURSOR FOR BLOCK STRIPE WRITING
- Publication number 20250046378
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Donghua Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH R...
- Publication number 20250046384
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Akio SUGAHARA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE SUPPORTING WORD LINE HOLDING OPERATION AND OPERATING...
- Publication number 20250037776
- Publication date Jan 30, 2025
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
TRIPLE MODULAR REDUNDANCY FOR FAULT-TOLERANT IN-MEMORY COMPUTING
- Publication number 20250037786
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS
- Publication number 20250037769
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- JiaLiang Deng
- G11 - INFORMATION STORAGE
Information Patent Application
READ VOLTAGE OVERDRIVE IN READ RECOVERY
- Publication number 20250037773
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20250037767
- Publication date Jan 30, 2025
- Lodestar Licensing Group, LLC
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20250037770
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- Hongtao Liu
- G11 - INFORMATION STORAGE
Information Patent Application
CHIP-PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF, MEMORY SYSTE...
- Publication number 20250038150
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE THAT PERFORMS VERI...
- Publication number 20250037771
- Publication date Jan 30, 2025
- KIOXIA Corporation
- Masanobu SHIRAKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NOR MEMORY DEVICE FOR MULTIPLY-ACCUMULATE OPERATIONS
- Publication number 20250029659
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Kamal Karda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250022512
- Publication date Jan 16, 2025
- KIOXIA Corporation
- Tomoki NAKAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250024682
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Rokgyeong Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20250022517
- Publication date Jan 16, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...
- Publication number 20250022513
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER
- Publication number 20250022511
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Wei-Chiang ONG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE
- Publication number 20250022516
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sungmin Joe
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY OPERATING METHOD, MEMORY AND MEMORY SYSTEM
- Publication number 20250014651
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICES AND MEMORY PACKAGES INCLUDING THE SAME
- Publication number 20250014645
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Minsu Kim
- G11 - INFORMATION STORAGE

Address circuits Decoders Word-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory devices having cell over periphery structure, memory package...

All level coarse/fine programming of memory cells

Semiconductor memory device

Non-volatile memory with concurrent sub-block programming

Semiconductor storage device and voltage control method for semicon...

Read level compensation for partially programmed blocks of memory d...

Semiconductor storage device and memory system

Memory device with leakage current verifying circuit for minimizing...

Non-volatile memory device, storage device including the same, and...

Parallelized defect detection across multiple sub-blocks in a memor...

Bias voltage schemes during pre-programming and programming phases

Multi-gate string drivers having shared pillar structure

Nonvolatile memory chip and semiconductor package including the same

Fast two-sided corrective read operation in a memory device

Storage device and read recovery method thereof

Semiconductor memory device

Dynamic gate steps for last-level programming to improve write perf...

Erase operation with electron injection for reduction of cell-to-ce...

Concurrent slow-fast memory cell programming

Memory device and program operation thereof

Memory device, memory system, and program method thereof

Double program debug method for NAND memory using self-verification...

Storage system and operating method of storage controller

Wordline or pillar state detection for faster read access times

MLC programming techniques in a memory device

Method for reading memory device and memory device

Programming techniques to reduce programming stress in a memory device

Pump skip for fast single-level cell non-volatile memory

Control method and system in 3D NAND systems

Memory device and operating method for performing a partial program...

Patents Applicationslast 30 patents

CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY D...

DEVICE AND METHOD TO GENERATE BIAS VOLTAGES IN NON-VOLATILE MEMORY

STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...

PARTIALLY PROGRAMMED BLOCK PADDING OPERATIONS

MEMORY SYSTEM

MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE

INTEGRATED CIRCUIT INCLUDING FLASH MEMORY AND CMOS LOGIC CIRCUITRY

NON-VOLATILE MEMORY WITH HIGH PERFORMANCE READ

SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS

MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...

MEMORY DEVICE AND METHOD OF PERFORMING A PROGRAMMING OPERATION

MIXED WRITE CURSOR FOR BLOCK STRIPE WRITING

MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH R...

MEMORY DEVICE SUPPORTING WORD LINE HOLDING OPERATION AND OPERATING...

TRIPLE MODULAR REDUNDANCY FOR FAULT-TOLERANT IN-MEMORY COMPUTING

MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS

READ VOLTAGE OVERDRIVE IN READ RECOVERY

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

CHIP-PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF, MEMORY SYSTE...

MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE THAT PERFORMS VERI...

THREE-DIMENSIONAL NOR MEMORY DEVICE FOR MULTIPLY-ACCUMULATE OPERATIONS

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...

NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER

METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE

MEMORY OPERATING METHOD, MEMORY AND MEMORY SYSTEM

NONVOLATILE MEMORY DEVICES AND MEMORY PACKAGES INCLUDING THE SAME