Address circuits Decoders Word-line control circuits

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GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/08Address circuits Decoders Word-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 12,272,404
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and its erase verification method, operation method, and a m...
- Patent number 12,272,411
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Chong Jing
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device and memory system
- Patent number 12,272,405
- Issue date Apr 8, 2025
- Kioxia Corporation
- Yasushi Nagadomi
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block read level voltage compensation to decrease read trig...
- Patent number 12,272,408
- Issue date Apr 8, 2025
- Micron Technology, Inc.
- Nagendra Prasad Ganesh Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for reading three-dimensional flash memory
- Patent number 12,272,410
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zilong Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device configured to reduce degradation of adjacent word lin...
- Patent number 12,272,403
- Issue date Apr 8, 2025
- Samsung Electronics Co., Ltd.
- Myoung-Ho Son
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 12,266,404
- Issue date Apr 1, 2025
- Kioxia Corporation
- Hiroshi Maejima
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-compensated time estimate for a block to reach a unifor...
- Patent number 12,266,420
- Issue date Apr 1, 2025
- Micron Technology, Inc.
- Patrick R. Khayat
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Conditional valley tracking during corrective reads
- Patent number 12,266,407
- Issue date Apr 1, 2025
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method of memory, memory, memory system, and electronic d...
- Patent number 12,266,405
- Issue date Apr 1, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lu Qiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block handling in a non-volatile memory device
- Patent number 12,260,916
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Zhongguang Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of processing security data thereof
- Patent number 12,260,918
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yoo-Jung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hyperdimensional computing device
- Patent number 12,260,913
- Issue date Mar 25, 2025
- Macronix International Co., Ltd.
- Yu-Hsuan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Level shifting in all levels programming of a memory device in a me...
- Patent number 12,260,914
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with parallel programming
- Patent number 12,260,915
- Issue date Mar 25, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and method of operating nonvolatile memory
- Patent number 12,260,923
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Hyunee Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for effectively checking program state and operation...
- Patent number 12,254,932
- Issue date Mar 18, 2025
- SK Hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,254,927
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Smart prologue for nonvolatile memory program operation
- Patent number 12,254,933
- Issue date Mar 18, 2025
- INTEL NDTM US LLC
- Pranav Chava
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 12,254,949
- Issue date Mar 18, 2025
- Macronix International Co., Ltd.
- Teng-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,254,929
- Issue date Mar 18, 2025
- Kioxia Corporation
- Masanobu Shirakawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Data retention event preparation/recovery system
- Patent number 12,248,381
- Issue date Mar 11, 2025
- Dell Products L.P.
- Michael Rijo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Storage devices and methods of operating storage devices
- Patent number 12,249,376
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Eun Chu Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Faster multi-cell read operation using reverse read calibrations
- Patent number 12,249,381
- Issue date Mar 11, 2025
- Micron Technology, Inc.
- Go Shikata
- G11 - INFORMATION STORAGE
Information Patent Grant
Open block-based read offset compensation in read operation of memo...
- Patent number 12,249,379
- Issue date Mar 11, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for organizing data in a memory device
- Patent number 12,249,377
- Issue date Mar 11, 2025
- Glen E. Hush
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
CELSRC voltage separation between SLC and XLC for SLC program avera...
- Patent number 12,249,378
- Issue date Mar 11, 2025
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for operating the same
- Patent number 12,243,589
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Chun Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
In-place write techniques without erase in a memory device
- Patent number 12,243,591
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power read method and a memory device capable thereof
- Patent number 12,243,593
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Drift Aware Read Operations
- Publication number 20250118366
- Publication date Apr 10, 2025
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
READ IN MULTI-TIER NON-VOLATILE MEMORY
- Publication number 20250118376
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Manoj Shenoy
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE OPERATION WITH ELECTRON INJECTION FOR REDUCTION OF CELL-TO-CE...
- Publication number 20250118365
- Publication date Apr 10, 2025
- Micron Technology, Inc.
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20250118370
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Ji-Sang LEE
- G11 - INFORMATION STORAGE
Information Patent Application
FAST TWO-SIDED CORRECTIVE READ OPERATION IN A MEMORY DEVICE
- Publication number 20250118374
- Publication date Apr 10, 2025
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
ARTIFICIAL SELECT GATE CUT FOR NAND
- Publication number 20250118369
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Yuki Kuniyoshi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR GIDL ERASE IN MEMORY SYSTEMS
- Publication number 20250118373
- Publication date Apr 10, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li XIANG
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND PASS-FAIL CHECK METHOD THEREOF
- Publication number 20250118381
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Jungmin Park
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING MEMORY DEVICE AND MEMORY DEVICE
- Publication number 20250118375
- Publication date Apr 10, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM OPERATIONS IN MEMORY DEVICES
- Publication number 20250111879
- Publication date Apr 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Hongtao LIU
- G11 - INFORMATION STORAGE
Information Patent Application
ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION
- Publication number 20250111878
- Publication date Apr 3, 2025
- STMicroelectronics International N.V.
- Fabio Enrico Carlo Disegni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL VOLTAGE LEVEL SELECTION
- Publication number 20250104772
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD FOR MEMORY DEVICE
- Publication number 20250104773
- Publication date Mar 27, 2025
- Macronix International Co., Ltd.
- Chen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
GANGED READ OPERATION FOR MULTIPLE SUB-BLOCKS
- Publication number 20250104779
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250104771
- Publication date Mar 27, 2025
- SK HYNIX INC.
- Sung Hyun Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE ZONE BASED UNSELECT WORD LINE BIAS TO ENABLE SINGLE-SIDE...
- Publication number 20250104774
- Publication date Mar 27, 2025
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD OF MEMORY DEVICE AND MEMORY SYSTEM
- Publication number 20250104778
- Publication date Mar 27, 2025
- Macronix International Co., Ltd.
- Che-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
WORDLINE OR PILLAR STATE DETECTION FOR FASTER READ ACCESS TIMES
- Publication number 20250104781
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE BUDGET BY EMPLOYING AN OXIDE-NITRIDE PITCH DEPEND...
- Publication number 20250095738
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM
- Publication number 20250095744
- Publication date Mar 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jiameng CUI
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTO...
- Publication number 20250095745
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Tae-Hong KWON
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Publication number 20250095746
- Publication date Mar 20, 2025
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATION METHOD OF MEMORY SYSTEM, DATA READ METHOD OF MEMORY AND M...
- Publication number 20250095749
- Publication date Mar 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiangnan Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES
- Publication number 20250095757
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Sai Gautham Thoppa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF, MEMORY SYSTEM, AND STOR...
- Publication number 20250095739
- Publication date Mar 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Wei QI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE
- Publication number 20250095740
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095741
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Xu LI
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...
- Publication number 20250095742
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM
- Publication number 20250087278
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250087263
- Publication date Mar 13, 2025
- KIOXIA Corporation
- Manabu SATO
- G11 - INFORMATION STORAGE

Address circuits Decoders Word-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Programming for three-dimensional NAND memory

Memory and its erase verification method, operation method, and a m...

Non-volatile semiconductor memory device and memory system

Partial block read level voltage compensation to decrease read trig...

Method for reading three-dimensional flash memory

Memory device configured to reduce degradation of adjacent word lin...

Semiconductor storage device

Temperature-compensated time estimate for a block to reach a unifor...

Conditional valley tracking during corrective reads

Operation method of memory, memory, memory system, and electronic d...

Partial block handling in a non-volatile memory device

Memory devices and methods of processing security data thereof

Hyperdimensional computing device

Level shifting in all levels programming of a memory device in a me...

Non-volatile memory device with parallel programming

Nonvolatile memory device and method of operating nonvolatile memory

Memory device for effectively checking program state and operation...

In-line programming adjustment of a memory cell in a memory sub-system

Smart prologue for nonvolatile memory program operation

Memory device

Semiconductor memory device

Data retention event preparation/recovery system

Storage devices and methods of operating storage devices

Faster multi-cell read operation using reverse read calibrations

Open block-based read offset compensation in read operation of memo...

Apparatuses and methods for organizing data in a memory device

CELSRC voltage separation between SLC and XLC for SLC program avera...

Memory device and method for operating the same

In-place write techniques without erase in a memory device

Low power read method and a memory device capable thereof

Patents Applicationslast 30 patents

Drift Aware Read Operations

READ IN MULTI-TIER NON-VOLATILE MEMORY

ERASE OPERATION WITH ELECTRON INJECTION FOR REDUCTION OF CELL-TO-CE...

NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

FAST TWO-SIDED CORRECTIVE READ OPERATION IN A MEMORY DEVICE

ARTIFICIAL SELECT GATE CUT FOR NAND

METHOD AND APPARATUS FOR GIDL ERASE IN MEMORY SYSTEMS

NONVOLATILE MEMORY DEVICE AND PASS-FAIL CHECK METHOD THEREOF

METHOD FOR READING MEMORY DEVICE AND MEMORY DEVICE

PROGRAM OPERATIONS IN MEMORY DEVICES

ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION

MEMORY CELL VOLTAGE LEVEL SELECTION

MEMORY DEVICE AND OPERATING METHOD FOR MEMORY DEVICE

GANGED READ OPERATION FOR MULTIPLE SUB-BLOCKS

MEMORY DEVICE AND OPERATING METHOD THEREOF

WORD LINE ZONE BASED UNSELECT WORD LINE BIAS TO ENABLE SINGLE-SIDE...

OPERATING METHOD OF MEMORY DEVICE AND MEMORY SYSTEM

WORDLINE OR PILLAR STATE DETECTION FOR FASTER READ ACCESS TIMES

THRESHOLD VOLTAGE BUDGET BY EMPLOYING AN OXIDE-NITRIDE PITCH DEPEND...

MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTO...

DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT

OPERATION METHOD OF MEMORY SYSTEM, DATA READ METHOD OF MEMORY AND M...

NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES

MEMORY DEVICE AND OPERATION METHOD THEREOF, MEMORY SYSTEM, AND STOR...

NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE

SEMICONDUCTOR MEMORY DEVICE

BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...

ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM

SEMICONDUCTOR STORAGE DEVICE