NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor substrate a memory element that includes a first gate electrode having a first height on the semiconductor substrate through a first insulation film, and a peripheral element other than the memory element that includes a second gate electrode having a second height on the semiconductor substrate through a second insulation film, in which stacked structures of gate materials are different between the first gate electrode of the memory element and the second gate electrode of the peripheral element, and the first height of the first gate electrode is different from the second height of the second gate electrode.

Description

FIELD

Embodiments described herein relate to a nonvolatile semiconductor memory device.

BACKGROUND

As a nonvolatile semiconductor memory device, a flash memory device which stores information in a non-volatile manner by storing a charge in a charge storage layer such as a floating electrode or a trap layer, for example, has been developed. The nonvolatile semiconductor memory device includes a memory element which stores information in a non-volatile manner, and a peripheral element which is an element other than the memory element. Examples of the peripheral element include a select transistor for selecting a memory element, and a transistor configuring a peripheral circuit for driving the memory element.

Low resistance of a gate electrode is required to be reduced for achieving high speed of writing and erasing processes. The memory element and the transistor of the peripheral circuit are formed at the same time due to manufacture reasons, in many cases. However, the gate electrode of each element has a different optimal structure between the memory element and the transistor of the peripheral circuit.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is an example of a circuit diagram schematically illustrating an example of an electrical configuration in all embodiments.

FIG. 2A is an example of a plan view schematically illustrating an example of a structure of a memory cell area in all embodiments.

FIGS. 2B and 2C are examples of a plan view schematically illustrating an example of a structure of a peripheral transistor in a peripheral circuit area in all embodiments (Example 1 and Example 2).

FIG. 3A is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C in a first embodiment.

FIG. 3B is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C in a first embodiment.

FIGS. 4A, 5A, 6A, 7A, 8A, 9A, 10A, 11A, 12A, 13A, and 14A are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C and schematically illustrating one manufacturing stage according to a first embodiment.

FIGS. 4B, 5B, 6B, 7B, 8B, 9B, 10B, 11B, 12B, 13B, and 14B are examples of a longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C schematically illustrating one manufacturing stage according to the first embodiment.

FIG. 15A is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C according to a second embodiment.

FIG. 15B is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C according to the second embodiment.

FIG. 16A is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C according to a third embodiment.

FIG. 16B is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C according to the third embodiment.

FIG. 16C is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C according to a modification example of a third embodiment.

FIG. 16D is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C in a modification example of the third embodiment.

FIGS. 17A and 18A are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C schematically illustrating one manufacturing stage according to the third embodiment.

FIGS. 17B and 18B are examples of a longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C schematically illustrating one manufacturing stage according to the third embodiment.

FIG. 19A is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C according to a fourth embodiment.

FIG. 19B is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C according to the fourth embodiment.

FIG. 20 is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B according to a fifth embodiment.

FIG. 21 to FIG. 29 are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B schematically illustrating one manufacturing stage according to the fifth embodiment.

FIG. 30 to FIG. 33 are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B and schematically illustrating one manufacturing stage according to a sixth embodiment.

FIG. 33B is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B according to the sixth embodiment.

FIG. 34 to FIG. 37 are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B and schematically illustrating one manufacturing stage according to a seventh embodiment.

FIG. 37B is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B according to the seventh embodiment.

FIG. 38 is an example of a schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C according to an eighth embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor substrate; a memory element including a first gate electrode having a first height on the semiconductor substrate through a first insulation film; and a peripheral element other than the memory element including a second gate electrode having a second height on the semiconductor substrate through a second insulation film, in which stacked structures of gate materials are different between the first gate electrode of the memory element and the second gate electrode of the peripheral element, and the first height of the first gate electrode is different from the second height of the second gate electrode.

According to another embodiment, there is provided a nonvolatile semiconductor memory device including: a semiconductor substrate; a memory element which includes a first gate electrode having a first height on the semiconductor substrate; and a peripheral element other than the memory element which includes a second gate electrode having a second height on the semiconductor substrate, in which the first gate electrode of the memory element includes a first stacked structure configured with a first electrode film, a first inter-electrode insulation film, and a first electrode structure stacked on the semiconductor substrate through the first insulation film, the second gate electrode of the peripheral element includes a second stacked structure including a second electrode film, a second inter-electrode insulation film, and a second electrode structure which is embedded in an opening formed to penetrate the second inter-electrode insulation film to reach the inside of the second electrode film and is stacked on the second inter-electrode insulation film, through the second insulation film on the semiconductor substrate, and the first height of the first gate electrode is configured to be different from the second height of the second gate electrode, and the first electrode structure directly above the first inter-electrode insulation film is configured to be different from the second electrode structure directly above the second inter-electrode insulation film.

Hereinafter, the embodiments will be described with reference to the drawings using a NAND type flash memory device as the nonvolatile semiconductor memory device. The drawings are schematically shown and a relationship between a thickness and a planar dimension, the ratios of thicknesses of each layer, and the like do not necessarily coincide with actual values. In addition, upward, downward, right, and left directions illustrate relative directions when a circuit forming surface side of a semiconductor substrate which will be described later is set to an upper side, and do not necessarily coincide with examples using the direction of gravitational acceleration as a reference. In the following description, an XYZ orthogonal coordinate system is used for convenience of the description. In the coordinate system, two directions which are parallel with respect to a surface (main surface) of the semiconductor substrate 2 and which are orthogonal with each other are set as an X direction and a Y direction, and a direction which is orthogonal with respect to both of the X direction and the Y direction is set as a Z direction.

First Embodiment

Hereinafter, FIG. 1 to FIG. 14B illustrate a first embodiment. FIG. 1 is an example schematically illustrating an electric configuration of a NAND type flash memory device as a block diagram. As illustrated in FIG. 1, a NAND type flash memory device 1 includes a memory cell array Ar in which a plurality of memory cells MT are disposed in a matrix, in a memory cell area M, and includes a peripheral circuit PC which performs reading, writing, and erasing for each memory cell of the memory cell array Ar, in a peripheral circuit area P.

A plurality of cell units UC are disposed in the memory cell array Ar in the memory cell area M. In the cell unit UC, a select transistor STD connected to a bit line BL, a select transistor STS connected to a source line SL, and memory cells MT (corresponding to memory elements) which are, for example, 64 (=m) memory elements between the two select transistors STD and STS are connected in series. In one block, n columns of cell units UC are disposed in parallel in the X direction (row direction: horizontal direction in FIG. 1) . The memory cell array Ar is configured with a plurality of blocks disposed in a Y direction (column direction) . In addition, one block is illustrated in FIG. 1 in order to simplify the description.

The peripheral circuit area P is provided on the periphery of the memory cell area M, and the peripheral circuit PC is disposed on the periphery of the memory cell array Ar. The peripheral circuit PC includes an address decoder ADC, a sense amplifier SA, a booster circuit BS including a charge pump circuit, a transfer transistor unit WTB, and the like. The address decoder ADC is electrically connected to the transfer transistor unit WTB through the booster circuit BS.

The address decoder ADC selects one block according to an address signal applied from the outside. The booster circuit BS boosts the driving voltage supplied from the outside when a selection signal of the block is applied, and supplies a predetermined voltage to transfer gate transistors WTGD, WTGS, and WT through a transfer gate line TG. A transfer transistor unit WTB includes the transfer gate transistor WTGD, the transfer gate transistor WTGS, and the word line transfer gate transistor WT. The transfer transistor unit WTB is provided to correspond to each block.

One of a drain or a source of the transfer gate transistor WTGD is connected to a select gate driver line SG2, and the other one thereof is connected to a select gate line SGLD. One of a drain or a source of the transfer gate transistor WIGS is connected to a select gate driver line SG1, and the other one thereof is connected to a select gate line SGLS. In addition, one of a drain or a source of the transfer gate transistor WT is connected to each word line driving signal line WDL, and the other one thereof is connected to each word line WL provided in the memory cell array Ar.

In the plurality of cell units UC disposed in the X direction, gate electrodes SGD of the select transistor STD (see FIG. 2A) are electrically connected to each other through the select gate line SGLD. In addition, gate electrodes SGS of the select transistor STS (see FIG. 2A) are electrically connected to each other through the select gate line SGLS. A source of the select transistor STS is commonly connected to the source line SL. In the plurality of memory cells MT of the cell units UC disposed in the X direction, the gate electrodes MG (see FIG. 2A) are electrically connected to each other through the word line WL.

The gate electrodes of the transfer gate transistors WTGD, WIGS, and WT are commonly connected to each other through the transfer gate line TG, and are connected to a boosting voltage supply terminal of the booster circuit BS. The sense amplifier SA is connected to the bit line BL, and is connected to a latch circuit for temporarily storing data when reading out the corresponding data.

FIG. 2A is an example of a layout pattern of a part of the memory cell area M. As illustrated in FIG. 2A, in the memory cell area M of a semiconductor substrate (for example, a p-type monocrystalline silicon substrate) 2, element isolation areas Sb having a shallow trench isolation (STI) structure configured with an element isolation film (see reference numeral 13 of FIG. 3B) embedded in a trench, are formed to extend along the Y direction in FIG. 2A. The plurality of element isolation areas Sb are formed at predetermined intervals in the X direction in FIG. 2A. Accordingly, a plurality of element areas Sa are formed to extend in the Y direction in FIG. 2A, and the plurality of element areas Sa are formed in a surface layer portion of the semiconductor substrate 2 to be separated from each other in the X direction.

The word lines WL are formed to extend in a direction to be orthogonal to the element areas Sa to intersect therewith (X direction in FIG. 2A). The plurality of word lines WL are formed at predetermined intervals in the Y direction in FIG. 2A. The gate electrodes MG of the memory cell MT are formed on the element areas Sa intersecting with the word lines WL.

One group of the memory cells MT disposed in the Y direction is set as an NAND string. The select transistors STD and STS are provided to be adjacent to both outer sides in the Y direction of the memory cells MT at the both ends of the NAND string. The plurality of select transistors STD are disposed in the X direction, and the gate electrode SGD of the plurality of select transistors STD is electrically connected to the select gate line SGLD. The gate electrode SGD of the select transistor STD is formed on the element area Sa intersecting with the select gate line SGLD.

FIG. 2B and FIG. 2C illustrate examples of layouts of transistors Trp1 and Trp2, as a peripheral element of the peripheral circuit area P. Since the structure of the transistors Trp1 and Trp2 are substantially the same as each other, only a plan layout of the transistor Trp1 of FIG. 2B will be described, and only the characteristically different parts will be described regarding the layout of the transistor Trp2.

An element isolation area Sbb is formed so as to remain a rectangular element area Saa on the semiconductor substrate 2. The transistors Trp1 formed on the peripheral circuit area P is provided in this rectangular element area Saa. A gate electrode PG1 which is isolated so as to cross over the element area is formed in the element area Saa, and a diffusion area (no reference numeral) formed with diffused dopants is provided on both sides of the semiconductor substrate 2. Agate contact CP1 is provided on the gate electrode PG1. The gate contact CP1 contacts an upper surface of the gate electrode PG1, and this contact area is an area directly above the element isolation area Sbb in plan view.

In the same manner as described above, and as illustrated in FIG. 2C, a gate electrode PG2 which is isolated so as to cross over the element area Saa of the transistor Trp2 is formed. A gate contact CP2 is provided on the gate electrode PG2. The gate contact CP2 comes in contact with an upper surface of the gate electrode PG2, and this contact area is an area directly above the element isolation area Sbb in plan view.

FIG. 3A and FIG. 3B schematically illustrate examples of cross-sectional structures of elements in the memory cell area and the peripheral circuit area. FIG. 3A is an example of schematic longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C. FIG. 3B is an example of a schematic longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C. Among them, the part of FIG. 3A taken along line 3Aa-3Aa and the part of FIG. 3B taken along line 3Ba-3Ba schematically illustrate cross-sectional structures of the memory cells MT and the select transistor STS in the memory cell area M.

The part of FIG. 3A taken along line 3Ab-3Ab and the part of FIG. 3B taken along line 3Bb-3Bb schematically illustrate cross-sectional structures of the transistor Trp1 of the peripheral circuit area P. The part of FIG. 3A taken along line 3Ac-3Ac and the part of FIG. 3B taken along line 3Bc-3Bc schematically illustrate cross-sectional structures of the transistor Trp2 of the peripheral circuit area P. FIG. 3A and FIG. 3B illustrate a processed state of each gate electrode of the memory cell MT, the select transistor STD, and the transistors Trp1 and Trp2.

As illustrated in FIG. 3A, a gate insulation film 3 is formed on the upper surface of the semiconductor substrate 2. This gate insulation film 3 is formed of a silicon oxide film or the like, for example. The gate electrodes MG of the memory cells MT and the gate electrodes SGD of the select transistor STD are formed on the upper surface of the gate insulation film 3.

The gate electrodes MG of the memory cells MT are formed on the upper surface of the gate insulation film 3 at predetermined intervals, and the gate electrodes MG of the memory cells MT and the gate electrode SGS of the select transistor STS are formed at predetermined intervals. The memory cell MT is configured to include the gate electrode MG and source and drain areas 2a formed in the semiconductor substrate 2 on either side thereof. The plurality of memory cells MT are formed to be adjacent to each other in the Y direction (see FIG. 2A).

The select transistors STS are formed adjacent to the end portion of the memory cell MT. The gate electrodes SGS of the select transistors STS in the drawing is formed for the select transistor STS of the block which is adjacent to a side opposite to the gate electrode MG of the memory cells MT at the predetermined interval. The structure of the select transistor STS is illustrated, and the structure of the select transistor STD is the same structure as the structure of the select transistor STS.

A source line contact CS (see FIG. 2A and not illustrated in FIG. 3A) is formed on a side to be a diffusion area 2b between each pair of select transistors STS. In the gate electrode MG of the memory cell MT, a first electrode film 4, an inter-electrode insulation film 5, a second electrode film 6, a barrier metal film 7, and a metal film 8 are stacked in this order on the gate insulation film 3, and an insulation film 9 is stacked on the metal film 8. The insulation film 9 is configured as a silicon nitride film, for example.

The first electrode film 4 is formed of a p-type polysilicon film in which a p-type dopant (for example, boron (B) is introduced, for example, and is configured as a floating electrode FG in the memory cell MT. As the first electrode film 4, the embodiment using a polysilicon film to which a p-type dopant is introduced is illustrated. When boron (B) is doped, for example, a p-type dopant is doped with concentration of approximately 1×10²⁰ to 10²² [atoms/cm³], for example. An n-type dopant (for example, phosphorus (P)) may be introduced, and there is no limitation. Phosphorus (P) may be slightly doped as the n-type dopant. The concentration of phosphorus in this case is approximately 1×10¹⁵ to 10¹⁷ [atoms/cm³], for example. The dopant concentration in the polysilicon film may be measured by secondary ion mass spectrometry (SIMS) analysis.

An oxide-nitride-oxide (ONO) film, a nitride-oxide-nitride-oxide-nitride (NONON) film, or a film obtained by substituting a nitride film in the middle with an insulation film having high-dielectric constant (High-K film: for example, alumina or hafnia) may be used as the inter-electrode insulation film 5.

The second electrode film 6 is formed of a p-type polysilicon film to which a p-type dopant (for example, boron (B)) is introduced, for example. The embodiment using the polysilicon film to which the p-type dopant is introduced as the second electrode film 6 is illustrated, but the polysilicon film to which an n-type dopant (for example, phosphorus (P)) is introduced may be used, and there is no limitation.

The barrier metal film 7 is configured with a tungsten nitride (WN) film, for example. The metal film 8 is configured with a tungsten (W) film, for example. The second electrode film 6, the barrier metal film 7, and the metal film 8 are configured as control electrodes CG (word line WL). In the surface layer of the semiconductor substrate 2, the source and drain areas 2a are provided between the gate electrodes MG and MG, and between the gate electrodes SGS and MG. The diffusion area 2b to which a dopant is diffused is provided between the gate electrodes SGS and SGS.

The gate electrode SGS of the select transistor STS has substantially the same structure as the structure of the gate electrode MG of the memory cell MT. In the gate electrode SGS, the first electrode film 4, the inter-electrode insulation film 5, the second electrode film 6, the barrier metal film 7, and the metal film 8 are stacked in this order on the gate insulation film 3. In this gate electrode SGS, an opening 11 having a predetermined width dimension is provided in the center of the second electrode film 6 and the inter-electrode insulation film 5, and the third electrode film 12 is embedded in this opening 11. The third electrode film 12 is configured with a p-type polysilicon film to which a p-type dopant (for example, boron (B)) is introduced, for example. The embodiment using the polysilicon film to which the p-type dopant is introduced as the third electrode film 12 is illustrated, but the polysilicon film to which an n-type dopant (for example, phosphorus (P)) is introduced may be used, and there is no limitation.

This third electrode film 12 is an electrode film which electrically connects the first electrode film 4 and the barrier metal film 7 through the opening 11, and accordingly, the first electrode film 4 and the metal film 8 are electrically connected to each other, and thus the select gate electrode SGS becomes an integral gate electrode. The upper surface of the third electrode film 12 and the upper surface of the second electrode film 6 substantially coincide with each other and are formed to be flat . Therefore, in the select gate electrode SGS, the third electrode film 12 is not formed on the upper surface of the second electrode film 6.

As a result, the barrier metal film 7 on the upper surface of the third electrode film 12 is formed with substantially the same film thickness. In addition, the barrier metal film 7 is formed to be substantially flat, even on the upper portion of an upper surface 4a of the first electrode film 4. A gap G is provided between the gate electrodes MG and MG, and between gates SGS and MG. In the same manner as the gate electrode MG, the insulation film 9 is stacked on the metal film 8 of the gate electrode SGS. The insulation film 9 is formed of a silicon nitride film, for example. An insulation film 10 is formed on the gaps G so as to cover the gate electrodes MG and SGS . This insulation film 10 is formed of a silicon oxide film, for example.

In the cross section taken along line 3Ba-3Ba of FIG. 3B, a part of the gate electrodes MG adjacent to each other in the X direction are connected to each other through the word lines WL, and a part of the select gate electrodes SGS adjacent to each other in the X direction are connected to each other through the select gate lines SGLS, are illustrated.

In this cross section, the word line WL is formed on the upper portion of the semiconductor substrate 2 through the gap G and the inter-electrode insulation film 5. A groove 2c is formed in the semiconductor substrate 2, and the gap G is provided between the word lines WL and WL, and word lines WL and the select gate line SGLS, on the formation area of the groove 2c. Accordingly, parasitic capacitance between the word lines WL and WL, and word lines WL and the select gate line SGLS may be suppressed.

The select gate line SGLS connects together the select gate electrodes SGS described above, but in the cross section taken along line 3Ba-3Ba of FIG. 3B, an element isolation film 13 is embedded in the groove 2c of the semiconductor substrate 2. This element isolation film 13 is formed of a silicon oxide film, for example.

On the element isolation film 13, the second electrode film 6, the barrier metal film 7, and the metal film 8 configuring the select gate line SGLS are stacked through the inter-electrode insulation film 5. In the same manner as the cross section illustrated in FIG. 3A, the opening 11 is formed in the second electrode film 6 and the inter-electrode insulation film 5, and the third electrode film 12 is configured in this opening 11. In the cross section taken along line 3Ba-3Ba of FIG. 3B, this third electrode film 12 is formed on the upper surface of the element isolation film 13.

Next, the structure of the transistor Trp1 will be described with reference to the cross sections taken along line 3Ab-3Ab of FIG. 3A and line 3Bb-3Bb of FIG. 3B. The transistor Trp1 includes a gate electrode PG1 which is formed on the semiconductor substrate 2 through a gate insulation film 23, and source and drain areas 2d formed in the surface layer of the semiconductor substrate 2 on both sides of the gate electrode PG1. Herein, a depth of the source and drain areas 2d is deeper than a depth of the source and drain areas 2a. The “depth” is a depth from the surface of the semiconductor substrate 2.

This gate electrode PG1 has substantially the same configuration as the gate electrode SGS of the select transistor STS. In the transistor Trp1, the gate insulation film 23 is formed on the element area Saa. This gate insulation film 23 is formed of a silicon oxide film, for example, and may be formed having a different film thickness in accordance with types of the transistor Trp1. The gate electrode PG1 is formed on the gate insulation film 23.

For the gate electrode PG1, a first electrode film 24, an inter-electrode insulation film 25, a second electrode film 26, a third electrode film 32, a barrier metal film 27, and a metal film 28 are stacked on the gate insulation film 23. An insulation film 29 and an insulation film 30 are stacked on the metal film 28. The first electrode film 24 is configured with an n-type polysilicon film into which an n-type dopant (for example, phosphorus (P) or arsenic (As)) is introduced, for example. The embodiment in which the n-type dopant is introduced to the first electrode film 24 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation. As an example, both the n-type dopant and the p-type dopant may be doped into the first electrode film 24. In this case, phosphorus (P) or arsenic (As) and boron (B) are doped into the first electrode film 24 as the dopant, for example. Phosphorus or arsenic is doped into the first electrode film 24 with concentration of approximately 1×10²⁰ to 10²² [atoms/cm³], for example. Boron (B) is doped to the first electrode film 24 with concentration of approximately 1×10¹⁹ [atoms/cm³], for example. In such a case, the conductivity type of the first electrode film 24 is the n type.

The inter-electrode insulation film 25 is configured with the same material as that of the inter-electrode insulation film 5. The second electrode film 26 is configured with an n-type polysilicon film to which an n-type dopant (for example, phosphorus (P)) is introduced, for example. The embodiment in which the n-type dopant is introduced to the second electrode film 26 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation. The third electrode film 32 is configured with a polysilicon film into which an n-type dopant (for example, phosphorus (P)) is introduced, for example. The embodiment in which the n-type dopant is introduced to the third electrode film 32 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation.

The barrier metal film 27 is configured with the same material (for example, tungsten nitride (WN)) as that of the barrier metal film 7. The metal film 28 is configured with the same material (for example, tungsten (W)) as that of the metal film 8. The insulation film 29 is configured with the same material (for example, silicon nitride film) as that of the insulation film 9. The insulation film 30 is configured with the same material (for example, silicon oxide film) as that of the insulation film 10.

In the gate electrode PG1, one or a plurality of openings 31 are provided at a part of the inter-electrode insulation film 25 and the second electrode film 26. The openings 31 are provided in order to cause the second electrode film 26 and the inter-electrode insulation film 25 to penetrate to the upper surface of the first electrode film 24. In addition, the opening 31 is not formed on the upper surface of the element isolation film 13 (see FIG. 2B and FIG. 3B). The third electrode film 32 is embedded in the opening 31.

The third electrode film 32 is an electrode film which electrically connects the first electrode film 24 and the barrier metal film 27 through the openings 31, and accordingly, the first electrode film 24 and the metal film 28 are electrically connected to each other, and thus the gate electrode PG1 becomes an integral gate electrode. The upper surface of the third electrode film 32 is formed to be flat. In addition, in the gate electrode PG1, the third electrode film 32 is also formed on the upper surface of the second electrode film 26. Herein, a film thickness of the third electrode film 32 formed on the upper surface of the second electrode film 26 is a film thickness d1.

The gate width and gate length of the peripheral transistors Trp1 maybe wider than a gate width and a gate length of the select transistor STS, respectively. As a result, a width of the opening 31 of the peripheral transistor Trp1 is set to be wider or the number of the openings 31 is increased according to the size of the gate width and the gate length of the peripheral transistor, and therefore it is possible to decrease contact resistance between the first and third electrode films 24 and 32.

In the cross section taken along line 3Bb-3Bb of FIG. 3B, the element isolation film 13 is embedded in the groove 2c of the semiconductor substrate 2, and a height of the upper surface of the element isolation film 13 may be formed so as to substantially coincide with a height of the upper surface of the element isolation film 13 under the select gate line SGLS in the memory cell area M. The inter-electrode insulation film 25, the second electrode film 26, the third electrode film 32, the barrier metal film 27, and the metal film 28 are stacked on the upper surface of the element isolation film 13. The insulation film 29 and the insulation film 30 are stacked in this order on the metal film 28.

In this cross section as well, the upper surface of the second electrode film 26 of the gate electrode PG1 is formed to have substantially the same height as the height of the upper surface of the second electrode film 6 of the word line WL and the select gate line SGLS. In this cross section as well, the third electrode film 32 of the gate electrode PG1 is stacked on the upper surface of the second electrode film 26. Herein, the “height” is a height from the upper surface of the gate insulation films 3 and 23.

That is, in the cross section taken along lines 3Aa-3Aa and 3Ab-3Ab of FIG. 3A, the upper surface of the second electrode film 26 of the gate electrode PG1 is configured to have substantially the same height as the height of the upper surface of the second electrode film 6 of the gate electrode MG and the select gate electrode SGS. That is, it may be said that a distance from the upper surface of the gate insulation film 3 to the upper surface of the second electrode film 6 is equivalent to a distance from the upper surface of the gate insulation film 23 to the upper surface of the second electrode film 26. The third electrode film 32 of the gate electrode PG1 is stacked on the upper surface of the second electrode film 26. Accordingly, the gate electrode MG may be lower by the film thickness d1 of the third electrode film 32 formed on the upper surface of the second electrode film 26, as compared to the gate electrode PG1.

Accordingly, gate electrodes MG having a small height suitable for the memory cell MT to form a memory element may be configured. If the width between the memory cells MT in the Y direction is small and the height of the gate electrodes MG of the memory cell MT is great, the gate electrode, MG may be collapsed when processing the gate electrode MG. If a space between the memory cells MT in the Y direction is narrow and the height of the gate electrode MG of the memory cell MT is large, it may be difficult to form the source and drain areas 2a. Meanwhile, since the gate length and the gate width of the gate electrode PG are great, such problems of the gate electrode MG hardly occur.

In addition, the diffusion depth of the source and drain areas 2d of the transistor Trp1 may be set to be large. At that time, acceleration energy of ion implantation for forming the source and drain areas 2d is increased. Herein, in the gate electrode PG1, the height of the gate electrode PG1 is increased, and therefore, it is possible to reduce a concern with the implanted ions penetrating through the gate electrode PG1 and entering a channel area of the surface layer of the semiconductor substrate 2.

In addition, since the width of the gate electrode PG1 is formed to be wider than the width of the gate electrode MG, the width of the opening 31 in the gate electrode PG1 may be set to be wider or the number of the openings 31 may be increased according to the width of the gate, and a gate electrode PG1 having low wiring resistance and interface resistance may be configured.

Next, the structure of the transistor Trp2 will be described with reference to the cross sections taken along line 3Ac-3Ac of FIG. 3A and line 3Bc-3Bc of FIG. 3B. As illustrated with the transistor Trp2 in FIG. 3A and FIG. 3B, in the peripheral circuit area P, the gate electrode PG2 of the transistor Trp2 may be formed to have substantially the same height as the height of the gate electrodes MG of the memory cell MT and/or the gate electrodes SGS of the select transistor STS. Herein, the “height” is the height from the upper surfaces of the gate insulation films 3 and 43.

The transistor Trp2 includes a gate electrode PG2 which is formed on the semiconductor substrate 2 through a gate insulation film 43, and source and drain areas 2e formed in the surface layer of the semiconductor substrate 2 on both sides of the gate electrode PG2. Herein, a depth of the source and drain areas 2e may be smaller than the depth of the source and drain areas 2d. In addition, the depth of the source and drain areas 2e may be set to be equal to or smaller than the depth of the source and drain areas 2a.

The gate electrode PG2 has substantially the same configuration as the gate electrode SGS of the select transistor STS. In the transistor Trp2, a gate insulation film 43 is formed on the element area Saa. This gate insulation film 43 is formed of a silicon oxide film, for example, and maybe formed to have a different film thickness in accordance with types of the transistor Trp2. The gate electrode PG2 is formed on the gate insulation film 43.

For the gate electrode PG2, a first electrode film 44, an inter-electrode insulation film 45, a second electrode film 46, a barrier metal film 47, and a metal film 48 are stacked on the gate insulation film 43. An insulation film 49 and an insulation film 50 are stacked in this order on the metal film 48. The first electrode film 44 is configured with a polysilicon film into which an n-type dopant (for example, phosphorus (P)) is introduced, for example. The embodiment in which the n-type dopant is introduced into the first electrode film 44 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation.

The inter-electrode insulation film 45 is configured with the same material as that of the inter-electrode insulation films 5 and 25. The second electrode film 46 is configured with a polysilicon film into which an n-type dopant is introduced, for example. The embodiment in which the n-type dopant is introduced to the second electrode film 46 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation.

The barrier metal film 47 is configured with the same material (for example, tungsten nitride (WN)) as that of the barrier metal films 7 and 27. The metal film 48 is configured with the same material (for example, tungsten (W)) as that of the metal films 8 and 28. The insulation film 49 is configured with the same material (for example, silicon nitride film) as that of the insulation films 9 and 29. The insulation film 50 is configured with the same material (for example, silicon oxide film) as that of the insulation films 10 and 30.

In the gate electrode PG2, one or a plurality of openings 51 are provided at a part of the inter-electrode insulation film 45 and the second electrode film 46, and a third electrode film 52 is embedded in the opening 51. The third electrode film 52 is configured with a polysilicon film to which an n-type dopant (for example, phosphorus (P)) is introduced, for example. The embodiment in which the n-type dopant is introduced to the third electrode film 52 is illustrated, but a p-type dopant may be introduced thereto, and there is no limitation.

The third electrode film 52 is an electrode film which electrically connects the first electrode film 44 and the barrier metal film 47 through the openings 51, and accordingly, the first electrode film 44 and the metal film 48 are electrically connected to each other in the gate electrode PG2, and thus the gate electrode PG2 becomes an integral gate electrode. The upper surface of the third electrode film 52 and the upper surface of the second electrode film 46 substantially coincide with each other and are formed to be flat. Thus, in the gate electrode PG2, the third electrode film 52 is not formed on the upper surface of the second electrode film 46.

A gate width of the peripheral transistor Trp2 may be wider than the gate width of the select transistor STS. As a result, a width of the opening 51 of the peripheral transistor Trp2 is set to be wider or the number of the openings is increased according to the size of the gate width, and therefore it is possible to decrease contact resistance between the first and third electrode films 44 and 52.

In the cross section taken along line 3Bc-3Bc of FIG. 3B, the element isolation film 13 is embedded in the groove 2c of the semiconductor substrate 2, and a height of the upper surface of the element isolation film 13 may be formed so as to substantially coincide with a height of the upper surface of the element isolation film 13 below the select gate line SGLS in the memory cell area M and the upper surface of the element isolation film 13 below the gate electrode PG1 of the peripheral circuit area P. The inter-electrode insulation film 45, the second electrode film 46, the barrier metal film 47, and the metal film 48 are stacked on the upper surface of the element isolation film 13. The insulation film 49 and the insulation film 50 are stacked in this order on the metal film 48.

In this cross section, the opening 51 is not formed on the second electrode film 46 and the inter-electrode insulation film 45, and the inter-electrode insulation film 45, the second electrode film 46, the barrier metal film 47, and the metal film 48 are stacked on the upper surface of the element isolation film 13. In this cross section, the upper surface of the second electrode film 46 of the gate electrode PG2 is formed to have substantially the same height as the height of the upper surface of the second electrode film 6 of the word line WL and the select gate line SGLS.

In the cross section taken along lines 3Aa-3Aa and 3Ac-3Ac of FIG. 3A, the upper surface of the second electrode film 46 of the gate electrode PG2 is configured to have substantially the same height as the height of the upper surface of the second electrode film 6 of the gate electrode MG and the select gate electrode SGS. This is because the third electrode film 52 of the gate electrode PG2 is not stacked on the upper surface of the second electrode film 46.

According to the exemplary embodiment, the memory cell MT and the transistor Trp1 are formed on the semiconductor substrate 2, the gate electrode MG of the memory cell MT is formed with the metal film 8, the barrier metal film 7, and the second electrode film 6 in this order from the top, and the gate electrode PG1 of the transistor Trp1 is formed with the metal film 28, the barrier metal film 27, the third electrode film 32, and the second electrode film 26 in this order from the top. That is, the configurations of the stacked gate materials are different from each other. Accordingly, the height of the gate electrode MG and the select gate electrode SGS may be configured to be lower than the height of the gate electrode PG1.

In addition, it is possible to arrange the transistors Trp1 and Trp2 having the height different from that of the peripheral circuit area P. It is not necessary to have the great depth of the source and drain areas 2e in accordance with the desired characteristics of the transistor Trp2. That is, the height of the gate electrode PG2 may be set to be smaller than the height of the gate electrode PG1. For example, the height of the gate electrodes PG2 may be set to be substantially equivalent to that of the gate electrode MT. For example, by disposing the gate electrode PG2 to be close to the gate electrode MG, it is possible to increase precision of flatness in a CMP step which will be described later.

Hereinafter, a manufacturing method of the structure described above will be described with reference to FIG. 4A to FIG. 14B. The embodiment will be described by focusing on a characterized portion, however, other steps may be added between each step if it is a typical step and a step described below may be eliminated as needed. In addition, each of the steps may be appropriately switched as long as that may be practically performed. FIGS. 4A, 5A, 6A, 7A, 8A, 9A, 10A, 11A, 12A, 13A, and 14A are examples of a longitudinal cross-sectional side view taken along line 3Aa-3Aa of FIG. 2A, line 3Ab-3Ab of FIG. 2B, and line 3Ac-3Ac of FIG. 2C and schematically illustrating one manufacturing stage. FIGS. 4B, 5B, 6B, 7B, 8B, 9B, 10B, 11B, 12B, 13B, and 14B are examples of a longitudinal cross-sectional side view taken along line 3Ba-3Ba of FIG. 2A, line 3Bb-3Bb of FIG. 2B, and line 3Bc-3Bc of FIG. 2C and schematically illustrating one manufacturing stage in a first embodiment.

For convenience of the description, the following description will be performed with reference to the reference numerals in the above-described structure, but the reference numerals 3 to 12 used in the drawing (cross section taken along line 3Aa-3Aa) illustrating the manufacturing stage of the memory cell MT and the select transistor STS in the memory cell area M, and the reference numerals 23 to 32, and 43 to 52 used in the drawings (cross sections taken along line 3Ab-3Ab and line 3Ac-3Ac) illustrating the peripheral circuit area P are different by the number of “20” and “40”, and the corresponding reference numerals denote elements which are formed as films by substantially the same step or substantially the same stage.

First, as illustrated in FIG. 4A and FIG. 4B, the gate insulation films 3, 23, and 43 are formed on the semiconductor substrate (p-type monocrystalline silicon substrate) 2. As the gate insulation films 3, 23, and 43, silicon oxide films are formed by a thermal oxidation process, for example. The thermal oxidation process is performed separately, and therefore the gate insulation films 3, 23, and 43 may have different film thicknesses from each other.

Next, polysilicon for forming the floating electrode FG is deposited by an LPCVD method, for example, and accordingly, the first electrode films 4, 24, and 44 are formed. At that time, a p-type dopant (for example, boron (B)) is introduced to the first electrode film 4 and an n-type dopant (for example, phosphorus (P)) is introduced to the first electrode films 24 and 44.

As the formation method, after temporarily depositing polysilicon to which the dopant is not introduced, a resist mask (not illustrated) is formed using a lithography method, the dopant is implanted by the ion implantation method, and accordingly the p-type dopant (for example, boron (B)) is introduced to the first electrode film 4. After removing the resist mask and then adhering the mask again, the n-type dopant (for example, phosphorus (P)) is introduced to the first electrode films 24 and 44. This method is used as the formation method.

In addition, as another method, after temporarily depositing polysilicon to form the first electrode film 4 while doping the p-type dopant onto the gate insulation film 3, for example, the first electrode film 4 not in the memory cell area M is removed. Then, after forming the first electrode films 24 and 44 while introducing the n-type dope by the same method, the first electrode films 24 and 44 in the memory cell area M are removed. With this method as well, the p-type dopant (for example, boron (B)) may be introduced to the first electrode film 4 and the n-type dopant (for example, phosphorus (P)) may be introduced to the first electrode films 24 and 44. Next, a silicon nitride film 100 to be a mask on the first electrode films 4, 24, and 44 is formed by a CVD method. The embodiment shows that the first electrode film 4 is formed of a p-type polysilicon and the first electrode films 24 and 44 are formed of an n-type polysilicon, but there is no limitation.

Next, the resist mask (not illustrated) is patterned on the silicon nitride film 100 by a lithography technology, and the silicon nitride film 100 is patterned by a reactive ion etching (RIE) method which is a dry etching technology using this resist mask as a mask. The resist mask is removed by asking.

Next, using the patterned silicon nitride film 100 as a mask, the first electrode films 4, 24, and 44, the gate insulation films 3, 23, and 43, and the upper portion of the semiconductor substrate 2 are subjected to a dry etching process by the RIE method, and as illustrated in FIG. 4B, the groove 2c for forming the element isolation areas Sb and Sbb is formed.

Next, as illustrated in FIG. 5A and FIG. 5B, the element isolation film 13 is embedded in the groove 2c. This element isolation film 13 is formed of a silicon oxide film which is formed by being coated with polysilazane to forma spin on glass (SOG) by a coating method, for example. An etch rate of the silicon oxide film formed using polysilazane in hydrofluoric acid (HF) is approximately 100 times a thermal silicon oxide film.

After embedding the element isolation film 13 in the groove 2c, flattening is performed by a chemical mechanical polishing (CMP) method, for example, and an etching-back process is performed using the RIE method, for example, and accordingly, the element isolation film 13 is formed so that a position of the upper surface thereof is lower than the upper surfaces of the first electrode films 4, 24, and 44 and higher than the upper surfaces of the gate insulation films 3, 23, and 43. The silicon nitride film 100 is peeled off by a hot phosphoric acid process, for example.

As illustrated in FIG. 6A and FIG. 6B, the inter-electrode insulation films 5, 25, and 45 are formed on all of the surfaces (that is, on the first electrode films 4, 24, and 44 of FIG. 6A and on the element isolation film 13 of FIG. 6B). The inter-electrode insulation films 5, 25, and 45 may be formed at the same time with the ONO film or the NONON film, for example. The films are formed using the LPCVD method, as the formation method, for example.

The second electrode films 6, 26, and 46 are formed on the inter-electrode insulation films 5, 25, and 45. At that time, a p-type dopant (for example, boron (B)) is introduced to the second electrode film 6 and an n-type dopant (for example, phosphorus (P)) is introduced to the second electrode films 26 and 46.

As the formation method, after temporarily depositing undoped polysilicon, a resist mask (not illustrated) is formed using a lithography method, the dopant is implanted by the ion implantation method, and accordingly the p-type dopant (for example, boron (B)) is introduced to the second electrode film 6. After separating the resist mask and then adhering the mask again, the n-type dopant (for example, phosphorus (P)) is introduced to the second electrode films 26 and 46. This method is used as the formation method.

In addition, as another method, after temporarily depositing polysilicon to be the second electrode film 6 while doping the p-type dopant onto the inter-electrode insulation films 5, 25, and 45, for example, the second electrode film 6 not in the memory cell area M is removed. Then, after forming the second electrode films 26 and 46 while introducing the n-type dopant by the same method, the second electrode films 26 and 46 in the memory cell area M are removed. With this method as well, the p-type dopant (for example, boron (B)) may be introduced to the second electrode film 6 and the n-type dopant (for example, phosphorus (P)) may be introduced to the second electrode films 26 and 46.

Next, as illustrated in FIG. 7A and FIG. 7B, a patterned mask (not illustrated) for forming openings on a part (for example, center portion) of the gate electrodes SGD and SGS of the select transistors STD and STS, and a part (for example, center portion or both side portions separated to the sides from the center) of the gate electrodes PG1 and PG2 of the transistors Trp1 and Trp2, and an anisotropic etching process is performed using this patterned mask as a mask, and accordingly, some portions of the second electrode films 6, 26, and 46 and the inter-electrode insulation films 5, 25, and 45 are selectively removed (particularly see FIG. 7A). At this time, in the cross section illustrated in FIG. 7A, some portions of the second electrode films 6, 26, and 46 and the inter-electrode insulation films 5, 25, and 45 are removed so as to reach the first electrode film 4. In the cross section illustrated in FIG. 7B, only the second electrode film 6 and the inter-electrode insulation film 5 are removed to the upper surface of the element isolation film 13. Accordingly, the openings 11 may be formed on some parts of the second electrode film 6 and the inter-electrode insulation film 5, and the openings 31 and 51 may be formed on some portions of the second electrode film 26 and 46, and the inter-electrode isolation films 25 and 45.

As illustrated in FIG. 8A and FIG. 8B, the third electrode films 12, 32, and 52 are formed. At that time, the third electrode film 12 is formed of a p-type polysilicon, for example, and the third electrode films 32 and 52 are formed of an n-type polysilicon, for example. In this formation method, an undoped polysilicon film, for example, is formed on all of the surfaces by the CVD method, a resist mask (not illustrated) is formed by the lithography method, dopants are implanted by the ion implantation method, and accordingly, the p-type dopant (for example, boron (B)) is introduced to the third electrode film 12. After separating the resist mask and then adhering the mask again, the n-type dopant (for example, phosphorus (P)) is introduced to the third electrode films 32 and 52. This method is used as the formation method.

Next, as illustrated in FIG. 9A and FIG. 9B, a resist mask (not illustrated) is selectively formed in an area including the formation area of the gate electrode PG1 of the transistors Trp1 by the lithography method, and the third electrode films 12, 32, and 52 of the gate electrodes MG and the select gate electrodes SGS in the memory cell area M are subjected to dry etching using the RIE method and the etching technology, to set the height of the upper surfaces of the third electrode films 12 and 52 to be low. By adjusting the etching amount of the third electrode films 12 and 52, the height of the gate electrode MG and the selecting electrode SGS of the nonvolatile memory cell MT may be adjusted to be less than the height of the gate electrode PG1.

At that time, as illustrated in FIG. 9A and FIG. 9B, residual films of the third electrode films 12 and 52 on the upper surfaces of the second electrode films 6 and 46 are removed. Then, the upper surfaces of the second electrode films 6 and 46 are exposed. The height of the upper surfaces of the second electrode films 6 and 46 may be suitably adjusted, or the third electrode films 12 and 52 may remain on the upper surfaces of the second electrode films 6 and 46. There is no limitation as long as the film thickness of the third electrode films 12 and 52 is smaller than the film thickness of the third electrode film 32 (see eighth embodiment).

Next, as illustrated in FIG. 10A and FIG. 10B, the barrier metal films 7, 27, and 47 are formed on the exposed upper surfaces of the second electrode films 6 and 46 and the third electrode films 12, 32, and 52. As the barrier metal films 7, 27, and 47, tungsten nitride (WN) or titanium nitride (TiN), for example, maybe used. At that time, the barrier metal films 7, 27, and 47 may be formed at the same time using a sputtering method. In FIG. 10A and FIG. 10B, the barrier metal films 7, 27, and 47 are seen to be separated, but are smoothly formed along the upper surfaces of the stacked structures 3 to 6, the stacked structures 23 to 26, and 32, and the stacked structures 43 to 46, between the areas M and P.

As illustrated in FIG. 11A and FIG. 11B, the metal films 8, 28, and 48 are formed on the barrier metal films 7, 27, and 47. As the metal films 8, 28, and 48, tungsten (W) maybe used, for example. At that time, the metal films 8, 28, and 48 may be formed at the same time using the sputtering method, for example.

As illustrated in FIG. 12A and FIG. 12B, the insulation films 9, 29, and 49 are formed on the upper surfaces of the metal films 8, 28, and 48. The insulation films 9, 29, and 49 are films used in the gate processing of the gate electrodes MG, SGS, PG1, and PG2, and are formed as hard masks using a silicon nitride film, for example.

As illustrated in FIG. 13A and FIG. 13B, a resist mask (not illustrated) is patterned on the upper surfaces of the insulation films 9, 29, and 49 by the lithography method, the anisotropic etching process is performed using this patterned resist mask as a mask, and a hard mask configured from the insulation films 9, 29, and 49 is patterned.

At that time, as illustrated in FIG. 13A and FIG. 13B, the patterned mask is formed so that the gate electrode SGS of the select transistors STS and the gate electrodes PG1 and PG2 of the transistors Trp1 and Trp2 of the peripheral circuit are not processed, and etching process is performed so that the gate electrodes MG of the memory cell MT is subjected to the division process.

Next, the metal films 8, 28, and 48, the barrier metal films 7, 27, and 47, the second electrode films 6, 26, and 46, and the inter-electrode insulation films 5, 25, and 45 are subjected to the anisotropic etching process using the RIE method, with the patterned insulation films 9, 29, and 49 as a mask, and the gate electrode MGs of the memory cells MT are formed.

As illustrated in FIG. 14A and FIG. 14B, after forming the gate electrodes MG, the element isolation film 13 is selectively subjected to the etching process so that the element isolation film 13 directly below the select gate electrode SGS remains. This process method may be performed using a dilute hydrofluoric acid process. This process is performed because a film having a high etch rate obtained by a hydrofluoric acid process is employed since the element isolation film 13 is configured with the silicon oxide film using polysilazane, for example. Accordingly, the element isolation film 13 may be subjected to the etching process in a highly selective manner, as compared to the gate insulation film 3, for example.

At that time, by controlling the etching processing time, it is possible to cause the element isolation film 13 directly below the select gate line SGLS to remain. Accordingly, the gap G is provided in a removal area of the element isolation film 13 directly below the word line WL.

When etching the element isolation film 13, it is desirable to form the gap G which penetrates the element isolation film 13 directly below the gate electrode MG of the memory cells MT. This gap G greatly reduces capacitance between the element areas Sa and between the wirings and the substrate.

As illustrated in FIG. 3A and FIG. 3B, the dopant is implanted by the ion implantation method using the memory cell MG as a mask (ion implantation A). The dopant is implanted by the ion implantation method using the select gate electrodes SGS as a mask. In a separate step from ion implantation A, the dopant is implanted by the ion implantation method using the gate electrodes PG1 in the peripheral circuit area P as a mask (ion implantation B). Herein, when performing the ion implantation B, a mask is formed by the resist in the vicinity of the gate electrode PG2 in the area M and the area P. In addition, in the separate step from the ion implantation B, dopants are implanted by the ion implantation method using the gate electrode PG2 in the peripheral circuit area P as a mask (ion implantation C). The acceleration when performing the ion implantation B is greater than the acceleration when performing the ion implantation A. In addition, the acceleration when performing the ion implantation B is greater than the acceleration when performing the ion implantation C.

Thereafter, the insulation films 10, 30, and 50 are formed on the gate electrode MG and on the select gate electrode SGS so as to generate the gap G. At that time, the insulation films 10, 30, and 50 may be formed at the same time with a silicon oxide film such as a plasma TEOS film or plasma SiH₄ by a plasma CVD method by which a step coverage is poor.

In order to increase the degree of integration, the gaps between the gate electrodes MG of the memory cell MT and between the gate electrode SGS of the select transistor STS and the gate electrode MG of the memory cell MT are adjusted to be narrow. Accordingly, the insulation film 10 is hardly embedded between the gate electrodes MG and SGS and between the gate electrodes MG and MG, and a cover is formed over the gaps G between the gate electrodes MG and SGS and between the gate electrodes MG and MG.

As a result, a gap G not embedded may be formed by the insulation film 10 between the gate electrodes MG of the memory cell MT and between the gate electrode SGD of the select transistor STD and the gate electrode MG of the memory cell MT. When the gap G is formed, it is possible to reduce the wiring capacitance between the gate electrodes MG and the capacitance between the gate electrode MG and the semiconductor substrate 2. Accordingly, it is possible to suppress a unintended activation due to interference between the memory cells MT and to suppress wiring delay.

A resist mask (not illustrated) is patterned on the insulation films 10, 30, and 50 by the lithography method, and the anisotropic etching of the stacked structures 3 to 10, 23 to 30, and 43 to 50 is subsequently performed using the RIE method. Then, the select gate electrode SGS and the gate electrodes PG1 and PG2 may be patterned. In the cross sections illustrated in FIG. 3A and FIG. 3B, two select gate lines SGLS (select gate electrodes SGS) may be formed, and the gate electrodes PG1 and PG2 may simultaneously be formed in the peripheral circuit area P.

Using such a manufacturing method, the height of the gate electrode MG of the memory cell MT may be configured to be lower than the height of the gate electrode PG1. The respective heights at that time are heights of the gate electrodes MG and PG1 from the upper surface of the gate insulation film 3 formed on the semiconductor substrate 2. Since the height of the gate electrode PG1 of the transistor Trp1 is configured to be high, the gate resistance may be reduced and the operation may be rapidly performed. In contrast, since the height of the gate electrode MG of the memory cell MT may be set to be low, an aspect ratio may be set low, and the processing may be easily performed even with a large integration degree of the memory cell MT. Therefore, the yield ratio is easily improved.

When forming the source and drain areas 2d, the dopant is implanted using the gate electrode PG as a mask in a self-aligned manner. The height of the gate electrode PG1 necessary for the ion implantation process may be set independently the heights of the gate electrodes MG of the memory cell MT. Even when the acceleration energy for the ion implantation for forming the source and drain areas 2d is increased, it is possible to reduce a concern with the implanted ion penetrating the gate electrode PG1 and entering a channel area of the surface layer of the semiconductor substrate 2.

By employing the manufacturing method, regarding a processing step of the gate electrode PG1 of the transistor Trp1 in the peripheral circuit area P, and a processing step of the gate electrode MG of the memory cell MT in the memory cell area M, many manufacturing steps may be communalized and the height of the gate electrodes MG and PG1 may be independently adjusted. Therefore, it is possible to set the height of the gate electrode PG of the transistor Trp1 to be high, while setting the height of the gate electrode MG of the memory cell MT to be low.

Second Embodiment

FIG. 15A and FIG. 15B illustrate the second embodiment. In the second embodiment, a silicide layer 7a is formed to be interposed between the second electrode film 6 and the barrier metal film 7 of the gate electrode MG of the memory cell MT, a silicide layer 27a is formed to be interposed between the third electrode film 32 and the barrier metal film 27 of the gate electrode PG1 of the peripheral transistor Trp1, and a silicide layer 47a is formed to be interposed between the barrier metal film 47 and the second and third electrode films 46 and 52.

As illustrated in FIG. 15A and FIG. 15B, the silicide layer 7a is formed in the gate electrode MG of the memory cell MT. The silicide layer 7a is formed to be interposed between the lower surface of the barrier metal film 7 and the upper surface of the second electrode film 6. The silicide layer 7a is formed of a tungsten silicide (WSi) film, for example.

The silicide layer 27a is formed on the gate electrode PG1 of the transistor Trp1. The silicide layer 27a is formed to be interposed between the lower surface of the barrier metal film 27 and the upper surface of the third electrode film 32. The silicide layer 27a is formed of a tungsten silicide (WSi) film, for example.

The silicide layer 47a is formed on the gate electrode PG2 of the transistor Trp2. The silicide layer 47a is formed to be interposed between the lower surface of the barrier metal film 47 and the upper surfaces of the second and third electrode films 46 and 52. The silicide layer 47a is formed of a tungsten silicide (WSi) film, for example. Film thicknesses in a stacked direction of the silicide layers 7a, 27a, and 47a are substantially the same to each other. This may be achieved using the same manufacturing step. The other structures are the same as in the embodiment described above, and therefore the description thereof will be omitted.

The manufacturing method will be described. The manufacturing method up to the manufacturing stage of FIG. 9A and FIG. 9B is the same as the manufacturing method according to the first embodiment, and therefore the description will be omitted. In the manufacturing stage of FIG. 9A and FIG. 9B, metal, for example, tungsten, is deposited on the upper surfaces of the second electrode films 6, 26, and 46 and subjected to a rapid thermal anneal (RTA) process to form the silicide layers 7a, 27a, and 47a. Any unreacted metal is removed using a chemical solution. The silicide layers 7a, 27a, and 47a are formed simultaneously to have a film thickness of 5 Å to 200 Å, for example. Since the silicide layers 7a, 27a, and 47a are formed simultaneously, the silicide layers have the same film thickness in the areas M and P.

After that, the barrier metal films 7, 27, and 47 are formed on the upper surfaces of the silicide layers 7a, 27a, and 47a, and the metal films 8, 28, and 48 are formed on the upper surfaces of the barrier metal films 7, 27, and 47. The manufacturing step after that is the same as in the embodiment described above.

According to the embodiment, the height of the gate electrode MG of the memory cell MT maybe lower than the height of the gate electrode PG1. As a result, it is possible to obtain the same effects as in the first embodiment.

In addition, since the gate electrode MG and the gate electrodes PG1 and PG2 include the silicide layer 47, it is possible to reduce the resistance of the gate electrode MG and the gate electrodes PG1 and PG2.

Third Embodiment

FIG. 16A to FIG. 18B illustrate the third embodiment and a modification example thereof. In the third embodiment, the silicide layer 27a is formed only on the gate electrode PG1 of the transistor Trp1 in a portion of the peripheral circuit area P.

As illustrated in FIG. 16A and FIG. 16B, the silicide layer 27a is formed on the gate electrode PG1 of the transistor Trp1. The silicide layer 27a is formed to be interposed between the lower surface of the barrier metal film 27 and the upper surface of the third electrode film 32. The silicide layer 27a is formed of a tungsten silicide (WSi) film, for example. Meanwhile, the silicide layers 7a and 47a are not provided on the gate electrode MG and the select gate electrode SGS of the memory cell MT, and the gate electrode PG2. That is, the second electrode film 6 directly comes into contact with the barrier metal film 7 in the gate electrode MG and the select gate electrode SGS, and the second electrode film 46 directly comes in contact with the barrier metal film 47 in the gate electrode PG2. Accordingly, the height of the gate electrode PG1 of the transistor Trp1 in a part of the peripheral circuit area P is formed to be higher by the film thickness of the silicide layer 27a. In contrast, the height of the gate electrode MG of the memory cell MT is formed to be lower by the film thickness of the silicide layer 27a.

The manufacturing method will be described. The manufacturing method up to the manufacturing stage of FIG. 8A and FIG. 8B is the same as the manufacturing method of the first embodiment, and therefore the description will be omitted, but in the manufacturing stage of FIG. 8A and FIG. 8B, the silicide layers 7a, 27a, and 47a are formed on the upper surfaces of the third electrode films 12, 32, and 52. As a result, the films are formed as illustrated in FIG. 17A and FIG. 17B. The silicide layers 7a, 27a, and 47a may be formed simultaneously to have a film thickness of 5 Å to 200 Å, for example. In this case, the silicide layers have the same film thickness in the areas M and P.

As illustrated in FIG. 18A and FIG. 18B, a resist mask (not illustrated) is formed in a formation area of the gate electrode PG1 of the transistor Trp1 by the lithography technology and the RIE method, and the silicide layer 27a is removed using this resist mask as a mask. When removing the silicide layer 27a, by adjusting the etching amount of the third electrode films 12 and 52 which are the lower layers thereof, the upper surfaces of the second and third electrode films 6 and 12, and 46 and 52 are set to be low.

Thereafter, the barrier metal films 7, 27, and 47 are formed on the upper surfaces of the second electrode films 6 and 12, and the third electrode films 46 and 52, and the silicide layer 27a. The metal films 8, 28, and 48 are formed on the upper surfaces of the barrier metal films 7, 27, and 47. The manufacturing step after that is the same as in the embodiment described above. Since the manufacturing steps after that is the same as the manufacturing steps in the embodiment described above, the description thereof will be omitted.

In the embodiment, as illustrated in FIG. 16A and FIG. 16B, the height of the gate electrodes MG and SGS may be set to be low. The height of the other gate electrodes (for example, PG2) in the peripheral circuit area P may also be adjusted to be low. As a result, the same effects as in the first and second embodiments are obtained.

Modification Example

As illustrated with a modification example in the FIG. 16C and FIG. 16D, the height from the gate insulation films 3, 23, and 43 to the upper surfaces of the third electrode films 12, 32, and 52 are set to be same in the gate electrodes MG and SGS and the gate electrodes PG1 and PG2. Herein, the silicide layer 27a is formed only on the gate electrode PG1. Even with such a structure, the height of the gate electrodes MG and SGS maybe low. The height of the other gate electrodes (for example, PG2) in the peripheral circuit area P may also be adjusted to be low. As a result, the same effects as in the first and second embodiments are obtained.

Regarding the manufacturing method, the gate electrodes MG, SGS, and PG2 are manufactured in the same manner as in the first embodiment, and the gate electrode PG1 may be manufactured by employing the manufacturing step of the gate electrode PG2 according to the second embodiment.

Fourth Embodiment

FIG. 19A and FIG. 19B illustrate the fourth embodiment. As illustrated in FIG. 19A and FIG. 19B, the electrode structure on the inter-electrode insulation film 5 of the gate electrode MG of the memory cell MT is configured with a polysilicon film as the second electrode film 6, and the silicide layer 7a. In addition, the electrode structure of the third electrode film 32 of the gate electrode PG1 of the peripheral transistor Trp1 is configured with the silicide layer 27a. In addition, the structure on the second electrode film 46 and the third electrode film 52 of the gate electrode PG2 of the peripheral transistor Trp2 is configured with the silicide layer 47a. The other structures are the same as in the embodiment described above, and therefore the description thereof will be omitted.

The manufacturing method will be described. The manufacturing method up to the manufacturing stage of FIG. 9A and FIG. 9B is the same as the manufacturing method of the first embodiment, and therefore the description will be omitted. In the manufacturing stage of FIG. 9A and FIG. 9B, the silicide layers 7a, 27a, and 47a are formed on the upper surfaces of the films 6, 12, 32, 46, and 52. The silicide layer 7a, 27a, and 47a may be formed at the same time to have a film thickness of 5 Å to 200 Å, for example. In this case, the silicide layers have the same film thickness in the areas M and P. Thereafter, in the second embodiment, the barrier metal films 7, 27, and 47 are formed and the metal films 8, 28, and 48 are formed on the upper surfaces of the barrier metal films 7, 27, and 47, but in the embodiment, these steps thereof are omitted. That is, the insulation films 9, 29, and 49 are directly formed on the silicide layers 7a, 27a, and 47a. The manufacturing step after that is the same as in the embodiment described above.

With the structure of the embodiment, the height of the gate electrode MG of the memory cell MT may be set lower than the height of the gate electrode PG1.

Fifth Embodiment

FIG. 20 to FIG. 29 illustrate the fifth embodiment. In bonded structure of a polysilicon and a metal (also including a barrier metal), if a Schottky junction is formed on the bonded surfaces thereof, an interface resistance is easily increased. In addition, a carrier dopant in the polysilicon is aggregated, and the interface resistance is easily increased, and a non-carrier dopant decreases an activation rate of the carrier dopant, and the resistance is easily increased.

Therefore, in the embodiment, the structure illustrated in FIG. 20 is used. FIG. 20 is an example of a schematic cross section taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B in a fifth embodiment.

As illustrated in FIG. 20, the silicide layer 7a is provided on a contact interface between the upper portion of the third electrode film 12 and the barrier metal film 7 of the select gate electrode SGS. In addition, the silicide layer 27a is provided on a contact interface between the upper portion of the third electrode film 32 and the barrier metal film 27 of the gate electrode PG1 of the transistor Trp1. As a result, the silicide layers 7a and 27a are disposed on the interface between the polysilicon (third electrode films 12 and 32) and the metal (barrier metal films 7 and 27), and accordingly it is possible to reduce the interface resistance between the polysilicon and metal.

In the embodiment, as illustrated in FIG. 20, the silicide layer 7a is formed only on the upper portion of the third electrode film 12 which is embedded in the opening 11. In addition, the silicide layer 27a is formed only on the upper portion of the third electrode film 32 which is embedded in the opening 31. The silicide layers 7a and 27a are not formed on the upper portions of the second electrode films 6 and 26. That is to say, the silicide layers 7a and 27a are not exposed to the side surfaces of the gate electrodes MG and PG.

FIG. 21 to FIG. 31 schematically illustrate the manufacturing stages with views taken along line 3Aa-3Aa of FIG. 2A and line 3Ab-3Ab of FIG. 2B. FIG. 21 illustrates the manufacturing stage illustrated in FIG. 6A of the embodiment described above, and in the embodiment, the films are formed using the same manufacturing steps as in the embodiment described above up to the manufacturing step.

As illustrated in FIG. 22, the second electrode films 6 and 26 are formed, and stopper films 101 and 121 for etching stoppers are formed on the upper surfaces of the second electrode films 6 and 26. The stopper films 101 and 121 may be formed at the same time in the areas M and P by the CVD method using a silicon nitride film, for example.

As illustrated in FIG. 23, resists 102 and 122 are coated on the upper surfaces of the stopper films 101 and 121, and resists 102 and 122 are patterned using a photolithography method.

As illustrated in FIG. 24, the stopper films 101 and 121 are subjected to an anisotropic etching process by the RIE method using the patterned resists 102 and 122 as a mask. The resists 102 and 122 are removed by asking, the anisotropic etching process is performed using the stopper films 101 and 121 as a mask, and holes penetrating the second electrode films 6 and 26 and the inter-electrode insulation films 5 and 25 are formed. As illustrated in FIG. 25, the third electrode films 12 and 32 are formed. The third electrode films 12 and 32 are formed of polysilicon, for example. In addition, the conductivity type of the third electrode films 12 and 32 may be n type or p type as long as it is suitably adjusted.

As illustrated in FIG. 26, the third electrode films 12 and 32 are etched back using the stopper films 101 and 121 as a stopper. By doing so, the upper surfaces of the third electrode films 12 and 32 are formed substantially flush with the upper surfaces of the stopper films 101 and 121.

As illustrated in FIG. 27, the metals 7b and 27b of one kind of metal among cobalt (Co), titanium (Ti), tungsten (W), chrome (Cr), and molybdenum (Mo) are formed as films on the upper surfaces of the stopper films 101 and 121. As illustrated in FIG. 28, by performing the RTA process, the metal silicide layers 7a and 27a are selectively formed only on the upper portion of the third electrode films 12 and 32. As illustrated in FIG. 29, the unreacted metals 7b and 27b are removed using a chemical solution, and the stopper films 101 and 121 are peeled off using hot phosphoric acid (H₄PO₄), for example.

In the process thereafter, the barrier metal films 7 and 27 are formed on the upper surfaces of the second electrode films 6 and 26 and the upper surfaces of the silicide layers 7a and 27a, and the metal films 8 and 28 are formed on the upper surfaces of the barrier metal films 7 and 27. After that, the gate electrodes MG and PG1 are processed by the RIE method. At that time, it is not necessary to etch the silicide layers 7a and 27a. Accordingly, the gate electrodes MG and PG1 are easily processed. Since the steps after that are the same as in the embodiment described above, and therefore the description thereof will be omitted.

According to the embodiment, since the silicide layers 7a and 27a are configured on a polymetal gate interface, it is possible to reduce the interface resistance. In addition, the silicide layers 7a and 27a are disposed only on the upper portion of the opening of the gate electrodes MG and PG1 (center of the gate electrodes) . As a result, since the silicide layers are not processed during processing the gates, the gates may be easily processed.

Sixth Embodiment

FIG. 30 to FIG. 33B illustrate a sixth embodiment. As illustrated in FIG. 33B, the upper surfaces of the silicide layers 7a and 27a may be located at the same position of the upper surfaces of the second electrode films 6 and 26. The manufacturing method of the sixth embodiment will be described. FIG. 30 illustrates another state after the etching-back process of the third electrode films 12 and 32 in the fifth embodiment. As illustrated in FIG. 30, after the third electrode films 12 and 32 are subjected to the etching-back process, the upper surfaces of the third electrode films 12 and 32 may not coincide with the upper surfaces of the stopper films 101 and 121.

The steps after that are illustrated in FIG. 31 to FIG. 33. As illustrated in FIG. 31, the silicide layers 7a and 27a are selectively formed on the upper surfaces of the third electrode films 12 and 32. At that time, the upper surfaces of the silicide layers 7a and 27a are located at the same position as the upper surfaces of the second electrode films 6 and 26. After that, as illustrated in FIG. 32, the stopper films 101 and 121 are peeled off, and as illustrated in FIG. 33, the barrier metal films 7 and 27 are formed on the upper surfaces of the second electrode films 6 and 26. After that, the stacked structures of the upper layers are formed using the manufacturing step illustrated in the embodiment described above, and accordingly the structure illustrated in FIG. 33B may be manufactured.

According to the embodiment, the same effects as in the fifth embodiment may be obtained. In addition, in the stacking direction of the gate electrodes MG and PG1, the height of the upper surfaces of the second electrode films 6 and 26 in the stacking direction is the same height as the height of the upper surfaces of the silicide layers 7a and 27a. Accordingly, it is possible to reduce the possibility of dividing the barrier metal films 7 and 27 due to level differences between the upper surfaces of the second electrode films 6 and 26 and the upper surfaces of the third electrode films 12 and 32.

Seventh Embodiment

FIG. 34 to FIG. 37B illustrate a seventh embodiment. As illustrated in FIG. 37B, the upper surfaces of the silicide layers 7a and 27a may be lower than the position of the upper surfaces of the second electrode films 6 and 26. The manufacturing method according to the seventh embodiment will be described. As illustrated in FIG. 34, after performing the etching-back process of the third electrode films 12 and 32, the third electrode films 12 and 32 are positioned to be lower than the upper surfaces of the stopper films 101 and 121.

The steps after that are illustrated in FIG. 35 to FIG. 37. As illustrated in FIG. 35, the silicide layers 7a and 27a are selectively formed on the upper surfaces of the third electrode films 12 and 32. At that time, the upper surfaces of the silicide layers 7a and 27a are positioned to be lower than the upper surfaces of the second electrode films 6 and 26. After that, as illustrated in FIG. 36, the stopper films 101 and 121 are peeled off, and as illustrated in FIG. 33, the barrier metal films 7 and 27 are formed on the upper surfaces of the second electrode films 6 and 26. Thereafter, the stacked structures of the upper layers are formed using the manufacturing steps illustrated in the embodiment described above, and accordingly the structure illustrated in FIG. 37B may be manufactured.

According to the embodiment, the height of the upper surfaces of the second electrode films 6 and 26 in the stacking direction is higher than the height of the upper surfaces of the third electrode films 12 and 32 in the stacking direction. It is also possible to reduce the interface resistance with such an embodiment.

Eighth Embodiment

FIG. 38 illustrates an eighth embodiment. As illustrated in FIG. 38, the stacked structure of the gate electrode MG of the memory cell MT with the polysilicon film (second electrode film 6), the polysilicon film (third electrode film 12), the barrier metal film 7, and the metal film 8, and the stacked structure of the gate electrode PG1 of the peripheral circuit with the polysilicon film (second electrode film 26), the polysilicon film (third electrode film 32), the barrier metal film 27, and the metal film 28, may be formed to be the same stacked structure. In the example illustrated in FIG. 38, the height of the upper surface of the third electrode film 12 is formed to be lower than the height of the upper surface of the third electrode film 32.

That is, in the manufacturing stage illustrated in FIG. 9A and FIG. 9B according to the first embodiment, when performing the etching-back process of the third electrode film 12, the third electrode film 12 remains on the upper surface of the second electrode film 6, while setting the height of the upper surface of the third electrode film 12 to be lower than the height of the upper surface of the third electrode film 32. By doing so, in the final manufacturing stage, it is possible to obtain the structure illustrated in FIG. 38.

In such a structure, since the height of the gate electrode PG1 may be set to be high, it is possible to reduce the resistance of the gate electrode PG1. In addition, since the height of the gate electrode MG of the memory cell MT may be configured to be lower than the height of the gate electrode PG1 of the transistor Trp1, it is possible to reduce the aspect ratio and to improve the integration degree.

Other Embodiments

As the barrier metal film 7, various materials such as tungsten silicide nitride (WSiN), titanium nitride (TiN), ruthenium (Ru), ruthenium oxide (RuO), tantalum (Ta), tantalum nitride (TaN), tantalum silicide nitride (TaSiN), manganese (Mn), manganese oxide (MnO), niobium (Nb), niobium nitride (NbN), molybdenum nitride (MoN), and vanadium (Vn) maybe used in addition to the tungsten nitride (WN), as long as it is a material for suppressing the reaction of the metal film and the polycrystalline silicon film.

For the metal film 8, a material such as tungsten silicide (WSi), molybdenum (Mo), and tantalum (Ta) or a material using these materials as a main component may be used, in addition to the tungsten (W).

In addition, regarding the combination of the barrier metal film 7 and the metal film 8, the various combinations may be achieved using various materials described above, in addition to the combination of the tungsten nitride film and the tungsten film.

The material patterns of the stacked structure of the electrode structure on the upper surface of the inter-electrode insulation films 5, 25, and 45 and on the upper surfaces of the third electrode films 12 and 32 in the openings 11 and 31 may be the same to each other or different from each other, as long as the heights of the electrode structures are formed to be different between the gate electrode MG in the memory cell area M and the gate electrode PG1 in the peripheral circuit area P.

That is, the stacked structure of the gate electrode MG of the memory cell MT with the polysilicon film (second electrode film 6) and the silicide layer 7a may have the same electrode structure as the stacked structure of the gate electrode PG1 in the peripheral circuit area P with the polysilicon film (second electrode film 26) and the silicide layer 27a.

The stacked structure of the gate electrode MG of the memory cell MT with the polysilicon film (second electrode film 6), the silicide layer 7a, the barrier metal film 7, and the metal film 8 may also have the same electrode structure as the stacked structure of the gate electrode PG1 in the peripheral circuit with the polysilicon film (second electrode film 26), the silicide layer 27a, the barrier metal film 27, and the metal film 28.

The exemplary embodiment is used in the NAND-type flash memory device 1, but may also be used in a NOR-type flash memory device or a nonvolatile semiconductor memory device such as an EEPROM. In addition, both of the devices configured with the memory cell as 1 bit and the device configured with the memory cell with a plurality of bits may be used.

Other Configurations

The superordinate concept, the middle concept, and the subordinate concept of the configurations according to the embodiments and the modification examples described above, or an example of a concept capable of being configured by combining a part of or the entirety of the configurations according to the embodiments and the modification example may be achieved as the following aspect, in addition to the expression in the claims.

[Aspect 1]

A nonvolatile semiconductor memory device including:

a semiconductor substrate;

a memory element that includes a first gate electrode on the semiconductor substrate; and

a peripheral element other than the memory element that includes a second gate electrode on the semiconductor substrate, in which

the first gate electrode of the memory element includes:

• • a first electrode film that is formed on the semiconductor substrate through a first insulation film,
  • a second insulation film that is formed on the first electrode film,
  • a second electrode film that is formed on the second insulation film, and
  • a first barrier metal film and a first metal film that are formed on the second electrode film,

the second gate electrode of the peripheral element includes:

• • a third electrode film that is formed on the semiconductor substrate through a third insulation film,
  • a fourth insulation film that is formed on the third electrode film,
  • a fourth electrode film that is formed on the fourth insulation film,
  • a fifth electrode film that is filled in an opening formed to penetrate the fourth electrode film and the fourth insulation film to reach an inside of the third electrode film, and is formed on the fourth electrode film on a side of the opening, and
  • a second barrier metal film and a second metal film that are formed on the fifth electrode film,

in which a height from an upper surface of the first insulation film to upper surfaces of the first barrier metal film and the first metal film is different from a height from an upper surface of the third insulation film to upper surfaces of the second barrier metal film and the second metal film.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions.

Indeed, the novel devices and methods described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions.

The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

Claims

1. A nonvolatile semiconductor memory device comprising: a semiconductor substrate;a memory element including a first gate electrode having a first thickness disposed on a first insulation film on the semiconductor substrate; anda first peripheral element other than a memory element including a second gate electrode having a second thickness disposed on a second insulation film on the semiconductor substrate,wherein the first gate electrode and second gate electrode comprise a plurality of film layers, and the configuration of the film layers are different as between the first gate electrode of the memory element and the second gate electrode of the peripheral element, andthe first thickness is different from the second thickness.

2. The nonvolatile semiconductor memory device according to claim 1, wherein the plurality of film layers of the second gate electrode of the peripheral element include a polysilicon film, a silicide layer, a barrier metal film, and a metal film, andthe plurality of film layers of the first gate electrode of the memory element include a polysilicon film, a barrier metal film, and a metal film.

3. The nonvolatile semiconductor memory device according to claim 1, wherein the second gate electrode extends farther from the semiconductor substrate than the first gate electrode.

4. The nonvolatile semiconductor memory device according to claim 1, wherein the first gate electrode and second gate electrode comprise a first electrode layer and a second electrode layer, and a third insulating film interposed therebetween, and the second gate electrode further includes a third electrode layer overlying the second gate electrode.

5. The nonvolatile semiconductor memory device according to claim 4, further comprising: at least one opening extending through the second electrode layer and the third insulating film, whereinthe third electrode film extends inwardly of the opening and contacts the first electrode film.

6. The nonvolatile semiconductor memory device according to claim 5, further comprising: a select gate electrode having a third thickness disposed directly adjacent to at least one memory cell, wherein the third thickness is less than the second thickness.

7. The nonvolatile semiconductor memory device according to claim 6, further comprising: a second peripheral element other than a memory element having a fourth thickness which is less than the second thickness.

8. The nonvolatile semiconductor memory device according to claim 5, wherein the difference in thickness of the first gate electrode and second gate electrode is equal to the thickness of the third electrode layer overlying the second electrode layer in the second gate electrode.

9. A nonvolatile semiconductor memory device comprising: a semiconductor substrate;a memory element having a first gate electrode having a first height on the semiconductor substrate; anda peripheral element other than the memory element having a second gate electrode having a second height on the semiconductor substrate, whereinthe first gate electrode of the memory element comprises a first electrode film, a first interelectrode insulation film, and a first electrode structure located in that order on a first insulation film located on the semiconductor substrate,the second gate electrode of the peripheral element includes a second structure including a second electrode film, a second interelectrode insulation film, and a second electrode structure including an opening therein extending through the second inter-electrode insulation film, and an electrode material filling the opening and contacting the second electrode, andthe first height of the first gate electrode is different from the second height of the second gate electrode, and the first electrode structure directly above the first interelectrode insulation film is different from the second electrode structure directly above the second interelectrode insulation film.

10. The nonvolatile semiconductor memory device according to claim 9, further comprising: a silicide layer only in the second electrode structure.

11. The nonvolatile semiconductor memory device according to claim 9, wherein the first electrode structure of the first gate electrode of the memory element includes a polysilicon film, a barrier metal film, and a metal film.

12. The nonvolatile semiconductor memory device according to claim 9, wherein the first electrode structure of the first gate electrode is formed of a polysilicon film and a silicide layer.

13. The nonvolatile semiconductor memory device according to claim 9, wherein materials of the first electrode structure directly above a surface of the first interelectrode insulation film are the same as materials of the second electrode structure directly above a surface of the second interelectrode insulation film and in the opening of the second interelectrode insulation film.

14. The nonvolatile semiconductor memory device according to claim 13, wherein the first electrode structure includes a structure in which a first polysilicon film and a second polysilicon film are formed on each other, andthe second electrode structure includes a third polysilicon film formed on the second inter-electrode insulation film and having the opening formed therein, and a fourth polysilicon film comprising the electrode film formed of the same material as that of the second polysilicon film that fills the opening.

15. The nonvolatile semiconductor memory device according to claim 14, wherein the fourth polysilicon film includes a first portion that is disposed on an upper surface of the third polysilicon film.

16. The nonvolatile semiconductor memory device according to claim 15, wherein the first height is smaller than the second height by the film thickness of the first portion.

17. A nonvolatile semiconductor memory device comprising: a semiconductor substrate;a memory element that includes a first gate electrode on the semiconductor substrate; anda peripheral element that includes a second gate electrode on the semiconductor substrate, whereinthe first gate electrode of the memory element includes a first multilayer structure including a first electrode, a first inter-electrode insulation film, and a control electrode located in that order on a first insulating film located on the semiconductor substrate,the second gate electrode of the peripheral element includes a second multilayer structure including a first electrode film, a second interelectrode insulation film, a second electrode film formed on a second insulation film on a semiconductor substrate, and a third electrode film buried in an opening extending through the second electrode film and the second inter-electrode insulation film and contacting the first electrode film, and a barrier metal film and a metal film formed on the second electrode film and the third electrode film, and a silicide layer located only on the third electrode film between the third electrode film and the barrier metal film.

18. The nonvolatile semiconductor memory device according to claim 17, wherein an upper surface of the silicide layer is lower than an upper surface of the second electrode film.

19. The nonvolatile semiconductor memory device according to claim 17, wherein an upper surface of the silicide layer is higher than an upper surface of the second electrode film.

20. The nonvolatile semiconductor memory device according to claim 17, wherein an upper surface of the silicide layer is flush with an upper surface of the second electrode film.