Claims
- 1. A semiconductor device comprising a body of semiconductor material of n conductivity type comprising a group III element and group V element and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-group III element compounds and Pd-group V element compounds.
- 2. The device according to claim 1 wherein the semiconductor material comprises Ga and As.
- 3. The device according to claim 2 wherein the contact comprises a combination of Pd-Ge compounds, Pd-Ga compounds and PdAs.sub.2.
- 4. A semiconductor device comprising a body of III-V semiconductor material of n conductivity type and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-Ga compounds and PdAs.sub.2.
- 5. The device according to claim 4 wherein the semiconductor material comprises Ga and As.
- 6. The device according to claim 4 wherein the semiconductor material consists essentially of GaAs.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a division of applicants' copending U.S. patent application, Ser. No. 502,451, filed Sept. 3, 1974, now U.S. Pat. No. 3,965,279, allowed Feb. 6, 1976, and assigned to the present assignee.
US Referenced Citations (5)
Divisions (1)
|
Number |
Date |
Country |
Parent |
502451 |
Sep 1974 |
|