on semiconductor bodies comprising AIIIBV compounds

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H01L21/28575

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28575on semiconductor bodies comprising AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride integrated circuits including non-gold-based metall...
- Patent number 12,087,713
- Issue date Sep 10, 2024
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metal formation on gallium nitride or aluminum gallium nitride
- Patent number 11,990,343
- Issue date May 21, 2024
- MACOM Technology Solutions Holdings, Inc.
- Wayne Mack Struble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and radio-frequency power amplifier module
- Patent number 11,978,786
- Issue date May 7, 2024
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,955,522
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Cheng-Wei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor laser and semiconductor laser
- Patent number 11,935,755
- Issue date Mar 19, 2024
- OSRAM OLED GmbH
- Alfred Lell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,817,451
- Issue date Nov 14, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,705,509
- Issue date Jul 18, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising electron blocking layer
- Patent number 11,688,690
- Issue date Jun 27, 2023
- Epistar Corporation
- Yung-Chung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,626,511
- Issue date Apr 11, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors and power amplifiers including s...
- Patent number 11,616,136
- Issue date Mar 28, 2023
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-based gallium nitride integrated circuits
- Patent number 11,569,182
- Issue date Jan 31, 2023
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,532,478
- Issue date Dec 20, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatically controlled gallium nitride based sensor and metho...
- Patent number 11,522,079
- Issue date Dec 6, 2022
- Tower Semiconductor Ltd.
- Yakov Roizin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage p-channel FET based on III-nitride heterostructures
- Patent number 11,522,080
- Issue date Dec 6, 2022
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to n-type transistors with X-valley layer over L-valley ch...
- Patent number 11,515,420
- Issue date Nov 29, 2022
- Intel Corporation
- Dax M. Crum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,456,294
- Issue date Sep 27, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts in semiconductor devices
- Patent number 11,417,757
- Issue date Aug 16, 2022
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-Nitride devices and methods of fabrication
- Patent number 11,387,327
- Issue date Jul 12, 2022
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic precision control of wafer-scale two-dimensional materials
- Patent number 11,355,393
- Issue date Jun 7, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making interconnect of group III-V semiconductor device...
- Patent number 11,322,398
- Issue date May 3, 2022
- National Chiao Tung University
- Edward-Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,302,788
- Issue date Apr 12, 2022
- Dynax Semiconductor Inc.
- Pan Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of p-contact resistance in a semiconductor light emitting d...
- Patent number 11,289,624
- Issue date Mar 29, 2022
- Lumileds LLC
- Kwong-Hin Henry Choy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic contacts for spin qubits
- Patent number 11,264,476
- Issue date Mar 1, 2022
- Intel Corporation
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of manufacturing the device
- Patent number 11,257,918
- Issue date Feb 22, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing ohmic contact electrode of gallium nitride-bas...
- Patent number 11,239,081
- Issue date Feb 1, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
- Yongliang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for field effect transistor
- Patent number 11,239,326
- Issue date Feb 1, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE-BASED WAFER CHEMICAL VAPOR DEPOSITION DEVICE AND DEPOSITION...
- Publication number 20240384415
- Publication date Nov 21, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Tinglin YOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20240347343
- Publication date Oct 17, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Manato DEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLI...
- Publication number 20240274688
- Publication date Aug 15, 2024
- Huawei Technologies Co., Ltd
- Zhili ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE
- Publication number 20240258110
- Publication date Aug 1, 2024
- MACOM Technology Solutions Holdings, Inc.
- Wayne Mack Struble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND APPL...
- Publication number 20240258395
- Publication date Aug 1, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Wangping WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240243186
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097000
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS
- Publication number 20240072125
- Publication date Feb 29, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...
- Publication number 20240063311
- Publication date Feb 22, 2024
- SUN YAT-SEN UNIVERSITY
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING OHMIC CONTACTS ON SEMICONDUCTOR DEVICES WITH TRE...
- Publication number 20230420536
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Madankumar Sampath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230369435
- Publication date Nov 16, 2023
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING OHMIC CONTACTS ON COMPOUND SEMICONDUCTOR DEVICES
- Publication number 20230369436
- Publication date Nov 16, 2023
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326991
- Publication date Oct 12, 2023
- United Microelectronics Corp.
- Da-Jun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF GROWING METAL-CONTAINING FILMS
- Publication number 20230295803
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Haoming Yan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ELECTRON BLOCKING LAYER
- Publication number 20230275022
- Publication date Aug 31, 2023
- EPISTAR CORPORATION
- Yung-Chung PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20230207323
- Publication date Jun 29, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE INTEGRATED CIRCUITS
- Publication number 20230154875
- Publication date May 18, 2023
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS
- Publication number 20230133481
- Publication date May 4, 2023
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
- Publication number 20220406898
- Publication date Dec 22, 2022
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- SHENGHOU LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION
- Publication number 20220293738
- Publication date Sep 15, 2022
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220254639
- Publication date Aug 11, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCING AN OHMIC CONTACT AND ELECTRONIC COMPONENT WITH OHMIC CONTACT
- Publication number 20220216306
- Publication date Jul 7, 2022
- FORSCHUNGSZENTRUM JULICH GmbH
- Alexander PAWLIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THRESHOLD-VOLTAGE NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSIST...
- Publication number 20220209000
- Publication date Jun 30, 2022
- DALIAN UNIVERSITY OF TECHNOLOGY
- Huolin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20220093749
- Publication date Mar 24, 2022
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220059353
- Publication date Feb 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220059352
- Publication date Feb 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE
- Publication number 20220029004
- Publication date Jan 27, 2022
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE
- Publication number 20210407810
- Publication date Dec 30, 2021
- MACOM Technology Solutions Holdings, Inc.
- Wayne Mack Struble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210391274
- Publication date Dec 16, 2021
- EPISTAR CORPORATION
- Yung-Chung PAN
- H01 - BASIC ELECTRIC ELEMENTS

on semiconductor bodies comprising AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium nitride integrated circuits including non-gold-based metall...

Silicide for group III-nitride devices and methods of fabrication

Gate metal formation on gallium nitride or aluminum gallium nitride

Bipolar transistor and radio-frequency power amplifier module

Semiconductor structure and method of forming the same

Method of producing a semiconductor laser and semiconductor laser

GaN devices with ion implanted ohmic contacts and method of fabrica...

Semiconductor device and manufacturing method thereof

Heterojunction bipolar transistor

Semiconductor device comprising electron blocking layer

Semiconductor device

Antenna gate field plate on 2DEG planar FET

Semiconductor device and power amplifier module

High electron mobility transistors and power amplifiers including s...

Aluminum-based gallium nitride integrated circuits

GaN devices with ion implanted ohmic contacts and method of fabrica...

Electrostatically controlled gallium nitride based sensor and metho...

High-voltage p-channel FET based on III-nitride heterostructures

Contacts to n-type transistors with X-valley layer over L-valley ch...

Semiconductor device and manufacturing method thereof

Ohmic contacts in semiconductor devices

Silicide for group III-Nitride devices and methods of fabrication

Atomic precision control of wafer-scale two-dimensional materials

Process for making interconnect of group III-V semiconductor device...

Semiconductor device and method of manufacturing the same

Control of p-contact resistance in a semiconductor light emitting d...

Magnetic contacts for spin qubits

Semiconductor device and method of manufacturing the device

Method for preparing ohmic contact electrode of gallium nitride-bas...

Electrode structure for field effect transistor

Patents Applicationslast 30 patents

NITRIDE-BASED WAFER CHEMICAL VAPOR DEPOSITION DEVICE AND DEPOSITION...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLI...

GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE

OHMIC CONTACT STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND APPL...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS

GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...

METHODS OF FORMING OHMIC CONTACTS ON SEMICONDUCTOR DEVICES WITH TRE...

COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR FORMING OHMIC CONTACTS ON COMPOUND SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHODS OF GROWING METAL-CONTAINING FILMS

SEMICONDUCTOR DEVICE COMPRISING ELECTRON BLOCKING LAYER

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

GALLIUM NITRIDE INTEGRATED CIRCUITS

ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS

GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE

SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

PRODUCING AN OHMIC CONTACT AND ELECTRONIC COMPONENT WITH OHMIC CONTACT

HIGH-THRESHOLD-VOLTAGE NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSIST...

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE

GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE

SEMICONDUCTOR DEVICE