Claims
- 1. In an ion mobility detector having an ion mobility grid and an enclosed volume in which an electrostatic field operates on ions for characterizing the mobility of said ions in said electrostatic field in an environment of gas and vapor molecules whose mean free path is many times smaller than the boundaries of said ion mobility detector, an improvement wherein the electrostatic field is enclosed within a relatively continuous structure comprised of first and second tubes communicating with each other through said ion mobility grid, said first tube encompassing a reactant region and said second tube encompassing a drift region, said relatively continuous structure having a film resistor disposed on the surface of said structure encompassing said field whereby a voltage potential difference impressed across said film resistor causes said field to be generated.
- 2. The improvement of claim 1 wherein said film resistor is disposed on the inside surface of said relatively continuous structure.
- 3. The improvement of claims 1 or 2 wherein the resistance of said film resistor is chosen to provide a predetermined power consumption by said film resistor when said potential difference is impressed thereacross.
- 4. The improvement of claims 1 or 2 wherein said relatively continuous structure is made of a dielectric material.
- 5. The improvement of claim 4 wherein said dielectric material is chosen from the group which includes alumina, mullite, ceramics, quartz, magnesium oxide and glass.
- 6. The improvement of claim 4 wherein said film resistor is made of a glass fritted resistance material fixed on said structure.
- 7. The improvement of claim 4 wherein said film resistor is characterized by a hard relatively gas impervious surface.
- 8. The improvement of claim 4 with additionally a relatively continuous film heating resistor coated on the exterior of said structure.
Parent Case Info
This application is a continuation of application Ser. No. 80,887 filed Oct. 1, 1979, now abandoned.
US Referenced Citations (4)
Continuations (1)
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Number |
Date |
Country |
Parent |
80887 |
Oct 1979 |
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