Optical interconnects are a type of communication technology that use light signals to transmit data between different components or devices within a system. These interconnects replace traditional electrical connections, such as copper wires or traces on a circuit board, with optical fibers or waveguides. In optical interconnects, data is converted into light signals using optical transmitters, typically lasers or light-emitting diodes (LEDs). These light signals travel through optical fibers or waveguides, which are made of materials that can efficiently guide and transmit light with minimal loss. At the receiving end, optical receivers convert the incoming light signals back into electrical signals that can be processed by electronic devices.
Some embodiments relate to a photonic device comprising a glass interposer comprising an optical network having one or more glass waveguides; and a plurality of photonic integrated circuits (PIC) attached to the glass interposer, at least one PIC of the plurality of PICs comprising an optical transceiver optically coupled to the optical network of the glass interposer and a plurality of electrical connections configured for coupling to one or more electronic chips.
In some embodiments, the glass interposer further comprises a through glass via (TGV) and the at least one PIC further comprises a through silicon via (TSV) electrically coupled to the TGV.
In some embodiments, the glass interposer further comprises a first redistribution layer (RDL) adjacent a first surface of the glass interposer and a second (RDL adjacent a second surface, opposite the first surface, of the glass interposer, wherein the first RDL is configured for connection to the at least one PIC and the second RDL is configured for connection to a substrate.
In some embodiments, the at least one PICs is mounted on the glass interposer at a first surface of the PIC, wherein the electrical connections are formed on second surface of the PIC opposite the first surface.
In some embodiments, the glass interposer defines a recess, and the first surface of the PIC is disposed in the recess, and wherein the optical transceiver of the at least one PIC is edge coupled to the optical network of the glass interposer.
In some embodiments, the glass interposer defines a recess, and the first surface of the PIC is suspended over the recess, and wherein the optical transceiver of the at least one PIC is evanescently coupled to the optical network of the glass interposer.
Some embodiments relate to a system comprising a plurality of photonic integrated circuits (PICs); and a multi-reticle glass interposer enabling optical communication between the PICs.
In some embodiments, at least one of the PICs is a multi-reticle PIC.
In some embodiments, the system further comprises a plurality of integrated circuit chips, each chip located on a different reticle of the PICs.
In some embodiments, the glass interposer includes glass waveguides coupling the PICs together.
In some embodiments, the glass interposer further comprises through-glass vias coupled to through silicon vias formed in the PICs.
In some embodiments, each of the plurality of PICs is obtained from a common wafer.
In some embodiments, the plurality of PICs are obtained from more than one wafer.
In some embodiments, each PIC is coupled to the glass interposer through evanescent coupling.
In some embodiments, the PICs comprises active photonic circuits and the glass interposer lacks active photonic circuits.
Some embodiments relate to a computing system comprising a glass interposer comprising an optical network having one or more glass waveguides; a plurality of photonic integrated circuits (PIC) attached to the glass interposer, the plurality of PICs comprising an optical transceiver optically coupled to the optical network of the glass interposer; and a plurality of electronic chiplets disposed on the plurality of PICs such that the plurality of PICs are disposed between the plurality of electronic chiplets and the glass interposer.
In some embodiments, the glass interposer further comprises through glass vias (TGV) and the PICs further comprise through silicon vias (TSV) electrically coupled to the TGVs.
In some embodiments, the plurality of PICs are obtained from more than one wafer.
In some embodiments, the glass interposer defines a recess, and at least one of the plurality of PICs is disposed in the recess, and wherein the optical transceiver of the at least one PIC is edge coupled to the optical network of the glass interposer.
In some embodiments, the computing system further comprises a voltage regulator (VR) module, wherein the glass interposer is disposed between the PICs and the VR module.
Various aspects and embodiments of the application will be described with reference to the following figures. It should be appreciated that the figures are not necessarily drawn to scale. Items appearing in multiple figures are indicated by the same reference number in the figures in which they appear.
Chip-on-optical-silicon solutions based on photonic interposers can be used to improve the bandwidth of chiplet die-to-die communications within an application specific integrated circuit (ASIC) package, enabling tight integration of multiple heterogeneous chiplets. Relative to conventional, electronic solutions, this approach improves communication bandwidth and latency across dies in that it enables communication anywhere in the die (not just at die edges) without restrictions due to electromagnetic interference (EMI). Further, this approach improves the yield of electronic dies in that it enables large chiplet dies to be split into smaller ones. Photonic interposers of these types include integrated photonic circuitry (e.g., photonic switches, transceivers, couplers and waveguides) configured to route signals in the optical domain in a programmable fashion.
The inventors have recognized and appreciated that this approach has challenges. First, it suffers from limited yield. To connect a significant number of chiplet dies together, the photonic interposer should be relatively large. To make it sufficiently large to be able to interconnect several chiplets, a photonic interposer is generally formed by combining together multiple contiguous reticle slices from an optical wafer. This is obtained using repeating reticle tiles. Yield issues arise because the performance of a photonic interposer depends on whether each one of these reticles yields. If at least one of these reticles does not yield (e.g., has manufacturing defects), the performance of the entire photonic interposer is compromised. Consider for example the wafer of
Second, forming a photonic interposer by repeating reticles of a wafer limits the flexibility of the chiplet dies that can be placed on top of the interposer. This is because in most implementations the reticles of a wafer are identical to each other, thereby limiting the functionality that can be achieved using a photonic interposer.
Recognizing the susceptibility of conventional photonic interposers to yield, coupled with their limited flexibility, the inventors have developed architectures based on glass interposers. Glass interposers of the types described herein are used to photonically interconnect multiple smaller photonic integrated circuits (PIC), as opposed to using a single, larger PIC. The inventors have recognized and appreciated that the typical yield of a glass interposer is significantly higher than the yield of a PIC. This is because glass interposers are passive in nature, while PICs include active photonic elements. Active photonic components (e.g., photonic transceivers and switches) tend to be more susceptible to manufacturing defects than passive photonic components (e.g., waveguides and couplers) because active components require additional manufacturing steps (e.g., ion implantation, sputtering, epitaxial growth, etc.).
This approach improves performance because instead of having to slice a large number of continuous reticles (as shown in
As a further advantage, using glass interposers in the manner described herein provides more flexibility than photonic interposer in that it enables use of PICs having different patterns. By contrast, in reticle-stitched photonic interposers, each reticle has the same pattern as the other reticles. This can be appreciated from
Glass interposer 102 may be made of any suitable type of glass, including for example SiO2, fused silica, or borosilicate glass. The glass interposer may be passive in nature in that it may include passive optical devices (e.g., waveguides, passive couplers, waveguide crossings, wavelength multiplexers/demultiplexers, etc.) but may omit active optical devices (e.g., modulators, detectors, switches, etc.). Glass waveguides 106 may be used to route light from one part of the glass interposer to another, thereby forming a network optically coupling the PICs to each other. For example,
A glass interposer may be fabricated using semiconductor manufacturing techniques. In one example, a glass interposer is patterned in accordance with a reticle-stitched arrangement. In such an arrangement, a step-and-repeat process produces multiple reticles as instantiations of the same photomask set. Each reticle may be patterned to have waveguides that optically couple to waveguides formed in the adjacent reticle. In
In some embodiments, glass interposer 102 may be relatively thick along the vertical direction, although the thickness may be limited by the maximum length that can be obtained for TGVs using conventional fabrication techniques. For example, in some embodiments, the thickness of the glass interposer may be less than one inch (e.g., between 150 μm and 350 μm or between 250 μm and 350 μm). In other embodiments, the thickness may be between 1 inch and 20 inches, between 2 inches and 20 inches, between 5 inches and 20 inches, between 7.5 inches and 20 inches, between 10 inches and 20 inches, between 12.5 inches and 20 inches, between 15 inches and 20 inches, between 1 inch and 15 inches, between 2 inches and 15 inches, between 5 inches and 15 inches, between 7.5 inches and 15 inches, between 10 inches and 15 inches, between 12.5 inches and 15 inches, between 1 inch and 10 inches, between 2 inches and 10 inches, between 5 inches and 10 inches, or between 7.5 inches and 10 inches, to provide a few examples.
The PICs 120 are disposed within recesses formed on the top surface of glass interposer 120. This arrangement allows the waveguides of a PIC to be aligned (along the same axis) with the glass waveguides of the interposer, thereby forming an edge coupler 137. Edge couplers provide efficient optical coupling to and from the PICs. In contrast to glass interposer 102, the PICs may be active in nature in that they may include modulators, photodetectors and optical switches. In
The optical switching elements can change the topology of how the electronic chiplets are interconnected with one another. A particular topology that is most advantageous for one application may first be created, and may subsequently be changed in response to a request to run a different application. Some of the most common topologies include all-to-all, hypertoroid, ring, and tree.
The optical switching elements also allow for the use of redundant photonic elements within the PICs, to improve yield of the PIC. Two photonic devices can be connected to a switch. If one photonic device (e.g., TX, RX, or coupler) doesn't yield during fabrication or breaks during operations, the switch can be used to change the system to use the other yielding or still-good photonic element.
The optical TX and RX in the PICs can utilize wavelength-division multiplexing (WDM) where multiple wavelengths (e.g., spaced 50, 100 GHz, 200 GHz, or 400 GHz apart in dense WDM or >10 nm apart in coarse WDM) are transported over the same physical waveguide or optical fiber. The glass waveguides as well as the waveguides within the PIC can be compatible with dense or coarse WDM.
In some embodiment, the PICs may further include vertical grating couplers to couple light out directly (vertically) without passing through the glass interposer. These vertical grating couplers can be useful for testing the photonic devices in the PIC during the fabrication process.
If the PIC has been flip-chipped to the glass interposer, a vertical grating coupler can be exposed from the bottom side (top side is closest to the active silicon layer and bottom side is where the handle silicon layer is) by removing or thinning the silicon handle. The removal can be done either through grinding or etching.
Light sources—e.g., laser, LED, VCSEL, or ASE sources—can be integrated into the system through several ways. First, an external source can be coupled into the system through fibers which can be connected through the edge connector assembly or the vertical grating couplers on the PIC. Additionally, these laser sources can also be immediately flip-chip bonded on at least one PICs. In another embodiment, one of the PICs can be made in a III-V foundry process such that this particular PIC has gain materials for lasing or light amplification operations. Optical circuit switch and light distribution system within the PICs can be used to distribute the light sources from one entry point to multiple PICs and within a single PIC to multiple TX elements.
In the example of
Electronic signals from a compute chiplet may be sent to a PIC, using a TX SerDes, with data rate at 56-64 Gbps NRZ or 112 Gbps PAM-4, for example. A physical coding sublayer (PCS) may also be used. The PCS enables scrambling and DC balancing of the bits that may be required by some TX components, e.g., microring modulators. The SerDes may also include the analog front end for equalization including (but not limited to) feed-forward equalization (FFE) & continuous time linear equalization (CTLE) on the TX side (and decision feedback equalization (DFE) on the RX side). The equalization can invert the channel response to significantly reduce inter-symbol interference. The signals can be sent directly to a photonic TX modulator or can be further amplified (if the photonic transmitter element requires a higher voltage). On the RX side, the signals can then be received by an RX SerDes.
If the electronic chiplets do not use SerDes to communicate with the corresponding PIC, it may use a wide and parallel interface such as a bunch of wires, AIB, or UCIe for communication with the PIC. In some cases, these signals can be sent directly from the TX PIC to the RX PIC. Further, in some protocols, such as UCIe, the clock can be forwarded from the TX to RX components by wavelength multiplexing the signals and the clock within the same waveguides. However, in some embodiments, it may be desirable to build a SerDes shim that serializes the wide-and-parallel signals (that can be typically slow) into a single signal that is commensurate with the electrical bandwidth of the photonic TX and RX.
Through glass vias (TGV) 103 may be used to provide electrical access to the PICs from the substrate 100. The TGV include electrical conductors extending through the interposer along the vertical direction. A bottom redistribution layer (RDL) 104 provides electrical coupling between the TGVs and the underlying substrate. A top RDL 110 provides electrical coupling between the TGVs and the PICs. Micro-bumps (not labelled in
In some embodiments, the number of layers in the top and the bottom RDLs are equal to each other due to manufacturing constraints, e.g., warpage of the glass. However, in other embodiments, the number of layers between the top and the bottom RDLs are different from each other. For example, because electrical routing already exists within the PIC 120, the number of necessary layers in the top RDL may be minimal. In another example, it may be desired to obviate the bottom RDL altogether if the pitch of the substrate 100 is already as fine/tight as the pitch of the through glass vias 103.
The example of
Another useful optical coupling methodology that is distinct from
In some other embodiment, the light source can also be integrated directly within the glass interposer without the need of the PIC in between. Coupling of the light sources to the glass interposer may use the same coupling methodology (evanescent coupling, edge coupling, vertical coupling) as that between the PIC and the glass interposer. The advantage of this direct coupling is that the polarization of the output light can be maintained within the glass (as compared to the need of using polarization-maintaining fiber). Further, coupling to waveguides means that the couplers can be packed in a tighter manner than the standard 127 μm or 250 μm for optical fibers.
The example of
The example of
The packages illustrated in
In some embodiments, the PICs 120 may be attached to a glass interposer 102 via glass welding, although other techniques are also possible. Nano-welding or micro-welding of glass allows glass to be attached to other glass, metals, silicon, or other materials. The welding can be done using laser welding where high-power, ultrashort-pulse lasers are aimed at the spots to be welded. In some embodiment, PICs 120 can be welded at locations away from or around the usable photonic elements. The locations of the welds can allow for precise alignment of PICs 120 to the glass interposer 102.
As can be appreciated from these examples, the glass interposers described herein enable photonic systems that combine PICs of different layouts. This is in contrast with some conventional reticle-stitched active photonic interposers, in which all the tiles share the same layout. The result is increased flexibility from a system architecture perspective. In the example of
The system allows for the electronic signals from each of the compute/switch/memory chiplets to be communicated to another compute/switch/memory chiplet in another glass reticle to be sent photonically. In some embodiments, the different PICs can be made in different processes (such that no identical mask set is used). For example, PIC 1 can be a silicon photonic PIC, PIC 2 can be a silicon nitride PIC, while PIC3 can be a PIC made in a III-V process (e.g., InP). In another embodiment, the size of PICs 1-3 can be larger than a single reticle and multi-reticle waveguide crossings can be used to connect the photonic elements between two adjacent reticles. It is also possible to have all the PICs placed in the multi-reticle glass system to be made with the same mask sets. The steps to create the system allows for only known yielding PIC dies to be packaged into the system.
In some embodiments, a PIC is fabricated in a process with optical amplification such as semiconductor optical amplifiers (SOAs). The PIC can either be made in a silicon photonics foundry and later III-V materials are deposited, or the PIC can be made directly in a III-V foundry. The SOAs can amplify optical signals that pass through this glass tile to counteract any optical losses in the system. The SOAs can also counteract the optical losses expected for signals exiting the system through optical fiber channels that are expected to be lossy or for signals arriving at the system that must be amplified to the sensitivity of the optical RX components. The SOAs can also be used to create lasers as a light source for the system.
The system of
Notably, the compute chiplet is disposed on the electrical RDL. This means that communication to and from the compute chiplet is performed in the electrical domain through the electrical RDL. To allow this, the PIC may be flip-chip bonded to the top RDL, without having to rely on TSVs. By contrast, the compute chiplet positioned on the north-eastern quadrant is disposed on a PIC. This means that communication to and from the compute chiplet is performed in the optical domain. The arrangement of the south-western quadrant is similar to that of the north-western in that it includes a compute chiplet and PICs on an electrical RDL. The difference is that this quadrant includes eight PICs organized on the periphery of the electrical RDL. Lastly, the south-eastern quadrant includes a single PIC spanning the entire reticle of the glass interposer. In this case, the PIC can be flip-chip bonded on top of the metal layer on the glass. It may not be necessary to include an RDL layer because the metal layers in the PIC can act as an RDL themselves.
In some embodiment, a reticle of the glass interposer may include electronic chiplet without PICs disposed thereon. Instead, the chiplets communicate with the neighboring chiplets using the substrate 100.
As discussed above, using glass interposers of the types described herein improves upon conventional active photonic interposers because they can improve system yield significantly. This can be appreciated from the examples of
In the example of
The example of
Optionally, a glass interposer can incorporate SOAs within a single reticle or within the fiber connector assembly to withstand the losses expected from the PIC, glass waveguide, and the optical fibers.
It is also important to note that the photonic signals arriving at one PIC may not necessarily be detected there. The signals may be rerouted to another location on the interposer before being detected using the built-in optical flow switches within one or more PICs.
In some embodiments, a computing system of the types described herein may be interconnected together by an external optical flow switch (see
In some embodiments, a flow switch device may be connected to one or more other flow switches such that a photonic signal originating from one interposer can be rerouted multiple times by multiple optical flow switches before being received by another interposer. This arrangement is depicted in
In some embodiments, wafer-level packaged stacked dies can directly bond to glass. At the same time, the electrical connections may be fanned out on the backside using organic or inorganic RDL. An example of this arrangement is depicted in
In some embodiments, a bundle of connections passing through openings formed on a glass interposer may be used in lieu of TGVs. This alternative arrangement is depicted in
The arrangement of
In the arrangement of
In the arrangement of
In further embodiments, the glass interposer may include passive optical circuits such as wavelength multiplexers and demultiplexers. These can be manufactured via arrayed waveguide gratings within the interposer or via resonant devices such as optical rings or racetracks. The glass interposer can also fan out waveguides at tighter pitch (<10 μm) with smaller modes within the PIC to waveguides of larger pitch (127 μm or 250 μm) with larger modes that may be compatible with the fiber connectors at the edges. Further, the waveguides within the glass interposer can be written in a 3D manner such that some waveguides can stay at the same vertical height and some waveguides can go up and down to different vertical heights. This makes it compatible with multi-fiber optical connectors that may have multiple rows of fibers at different heights. Also, some optical connectors may have pins that help the alignment of the fibers and the glass waveguides. Precise holes for those pins can also be manufactured within the glass interposer. In this case, the optical connector acts as the male connector while the glass interposer acts as the female connector.
In some embodiments, glass pins can be precisely welded on the surface of the glass interposer to enable the glass as a male connector. Two glass interposers can be plugged together if one has the male connections and another has the female connections. The optical coupling between one glass interposer and another glass interposer can be enabled via the same waveguides that enable coupling between the glass interposer and fiber optical connectors.
Having thus described several aspects and embodiments of the technology of this application, it is to be appreciated that various alterations, modifications, and improvements will readily occur to those of ordinary skill in the art. Such alterations, modifications, and improvements are intended to be within the spirit and scope of the technology described in the application. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, inventive embodiments may be practiced otherwise than as specifically described. In addition, any combination of two or more features, systems, articles, materials, and/or methods described herein, if such features, systems, articles, materials, and/or methods are not mutually inconsistent, is included within the scope of the present disclosure.
Also, as described, some aspects may be embodied as one or more methods. The acts performed as part of the method may be ordered in any suitable way. Accordingly, embodiments may be constructed in which acts are performed in an order different than described, which may include performing some acts simultaneously, even though shown as sequential acts in illustrative embodiments.
All definitions, as defined and used herein, should be understood to control over dictionary definitions, definitions in documents incorporated by reference, and/or ordinary meanings of the defined terms.
The indefinite articles “a” and “an,” as used herein in the specification and in the claims, unless clearly indicated to the contrary, should be understood to mean “at least one.”
The phrase “and/or,” as used herein in the specification and in the claims, should be understood to mean “either or both” of the elements so conjoined, i.e., elements that are conjunctively present in some cases and disjunctively present in other cases.
As used herein in the specification and in the claims, the phrase “at least one,” in reference to a list of one or more elements, should be understood to mean at least one element selected from any one or more of the elements in the list of elements, but not necessarily including at least one of each and every element specifically listed within the list of elements and not excluding any combinations of elements in the list of elements. This definition also allows that elements may optionally be present other than the elements specifically identified within the list of elements to which the phrase “at least one” refers, whether related or unrelated to those elements specifically identified.
The terms “approximately” and “about” may be used to mean within ±20% of a target value in some embodiments, within ±10% of a target value in some embodiments, within ±5% of a target value in some embodiments, and yet within ±2% of a target value in some embodiments. The terms “approximately” and “about” may include the target value.
This application claims the benefit under 35 U.S.C. § 119(e) of U.S. Provisional Patent Application Ser. No. 63/460,578, filed Apr. 19, 2023, under Attorney Docket No. L0858.70072US00 and entitled “MULTI-TILE OPTICAL COMMUNICATION SUBSTRATE USING GLASS INTERPOSER,” which is hereby incorporated herein by reference in its entirety.
Number | Date | Country | |
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63460578 | Apr 2023 | US |