Claims
- 1. A sputtering target consisting of an alloy
AgxMayMbz with x>50 at %, whereby: Ma: stands for a second metal, Mb: stands for a third metal:
- 2. The target of claim 1, wherein Ma is palladium and there is valid y>z.
- 3. The target of claim 1, wherein there is valid:
0<y<10 and 0<z<10.
- 4. The target of claim 1, wherein there is valid:
0<y<15 and z≈0.
- 5. The target of claim 4, wherein said alloy is AgxPdy.
- 6. The target of claim 4, wherein there is valid:
5<y<10 and z≈0.
- 7. The target of claim 6, wherein said alloy is AgxPdy.
- 8. The target of claim 6, wherein there is valid:
y=8, z≈0.
- 9. The target of claim 8, wherein said alloy is AgxPdy.
- 10. The target of claim 2, wherein there is valid:
Ma=Au, with y>z.
- 11. The target of claim 1, wherein the alloy exhibits a ratio of reflection coefficient and absorption coefficient n/k, for light of 650 nm:
0<n/k≦0.28.
- 12. The target of claim 11, wherein there is valid:
0<n/k≦0.2.
- 13. A sputtering target consisting of an alloy
CuxMayMbz with x>50 at %, whereby: Ma: stands for a second metal, Mb: stands for a third metal.
- 14. The target of claim 13, wherein Ma is palladium and there is valid y>z.
- 15. The target of claim 13, wherein there is valid:
0<y<10 and 0<z<10.
- 16. The target of claim 13, wherein there is valid:
0<y<15 and z≈0.
- 17. The target of claim 16, wherein said alloy is AgxPdy.
- 18. The target of claim 16, wherein there is valid:
5<y<10 and z≈0.
- 19. The target of claim 18, wherein said alloy is AgxPdy.
- 20. The target of claim 19, wherein there is valid:
y=8, z≈0.
- 21. The target of claim 20, wherein said alloy is AgxPdy.
- 22. The target of claim 14, wherein there is valid:
Ma=Au, with y>z.
- 23. The target of claim 13, wherein the alloy exhibits a ratio of reflection coefficient and absorption coefficient n/k, for light of 650 nm:
0<n/k<0.28.
- 24. The target of claim 23, wherein there is valid:
0<n/k<0.2.
- 25. A method for manufacturing data storage disks comprising the steps of:
providing a substrate; providing a spacer layer of a material which is transmitting light of a selected wavelength upon a surface of said substrate; applying between said spacer layer and said substrate a first layer of a first metal alloy, providing upon said spacer layer a second layer of a second metal alloy; depositing one of said first and second metal alloys of said first and second layers respectively so that said one thereof is semi-transparent with respect to said light; providing in said first and second metal alloys at least one same metal with a fraction in each of said alloys of more than 50 at %, and when either of said alloys contain gold, the amount of said gold being 0 to 50 at %.
- 26. The method of claim 25, including selecting said selected wavelength to be below 650 nm.
- 27. The method of claim 25, further selecting said wavelength to be 500 nm≦λ≦8580 nm.
- 28. The method of claim 25, further comprising the step of selecting at least one of said first and second metal alloys essentially to consist of either AgXMAYMbz or of CuXMAYMbz, where x>50 at %, where Ag or Cu are said same metal, Ma is a second metal and Mb is a third metal.
- 29. The method of claim 25, further selecting at least one of said first and second metal alloys to consist essentially of AgXMAYMbz and said second metal to be palladium and y>z.
- 30. The method of claim 28, further selecting 0<y<10 and 0<z<10.
- 31. The method of claim 25, further selecting at least one of said first and second metal alloys essentially to consist of AgXMAYMbz and selecting the second metal Ma to be palladium and further selecting 0<y<15 and z to be about equal to 0.
- 32. The method of claim 25, further comprising the step of selecting at least one of said first and second metal alloys to essentially consist of AgXMaYMbz and selecting as said second metal Ma gold and y>z.
- 33. The method of claim 25, including selecting said first and second metal alloys to have the same metals.
- 34. The method of claim 25, further comprising the step of selecting at least one of said first and second metal alloys to have a ratio n/k between the reflection coefficient n and the absorption coefficient k for the metal alloy in bulk and for light of 650 nm such that
0≦n/k≦0.28.
- 35. The method of claim 34, further selecting
0≦n/k<0.2.
- 36. The method of claim 25, thereby selecting at least one of said first and second metal alloys so that at least one of said first and second layers respectively has a stability of optical characteristics of at most ±2%, measured after exposition of said respective layer to air during a period of at least 24 h.
- 37. The method of claim 36, wherein said at least one first and second metal alloy is gold-free.
- 38. The method of claim 25, including selecting at least one of said first and second metal alloys to be gold-free, and said at least one of said layers essentially consisting of either AgXMaYMbz or CuXMazMbz, where x>50 at %.
- 39. The method of claim 25, further selecting at least one of said first and second metal alloys to essentially consist of AgXMaYMbz and thereby selecting palladium as a second metal Ma and y>z.
- 40. The method of claim 38, thereby selecting
0<y<10 and 0<z<10.
- 41. The method of claim 38, thereby selecting
0<y<15 and z to be about 0.
- 42. The method of claim 38, further selecting
5<y<10 and z to be about 0.
- 43. The method of claim 38, thereby selecting y=8 and z to be about 0.
- 44. The method of claim 25, further selecting the amount of said same metal to be present in both of said first and second metal alloys in the same fractional amount.
- 45. The method of claim 25, further selecting said first and second metal alloys to be the same alloys.
- 46. The method of claim 25, further comprising the step of depositing at least one of said first and second layers by sputtering.
- 47. The method of claim 25, further comprising the step of depositing at least one of said first and second layers by DC sputtering.
- 48. The method of claim 25, further comprising the step of depositing said same metal at both of said first and second layers from the same metal source.
- 49. The method of claim 48, including selecting said metal source to be a sputtering source.
- 50. The method of claim 49, including selecting said sputtering source to be a DC sputtering source.
- 51. The method of claim 25, further comprising the step of depositing said second layer as a semi-transparent layer for said light.
- 52. The method of claim 25, further comprising the step of depositing said first layer as a reflective layer for said light.
- 53. A method for manufacturing optical storage disks comprising the steps of:
providing a substrate; proving a spacer layer of a material which is transmitting light of a selected wavelength upon a surface of said substrate; applying between said spacer layer and said substrate a first layer of a first metal alloy; applying upon the yet free surface of said layer a second layer of a second metal alloy; selecting at least one of said first and second metal alloys to have at most 50 at % of gold and so that the ratio n/k between the reflection coefficient n and the absorption coefficient k of said at least one alloy in bulk and for light of 650 nm is: 0≦n/k≦0.28.
- 54. The method of claim 53, wherein there is selected:
0≦n/k≦0.2.
- 55. The method of claim 53, wherein a predominant part of at least one of said first and second metal alloys is silver.
- 56. The method of claim 53, wherein a predominant part of at least one of said first and second layers is copper.
- 57. The method of claim 53, wherein at least one of said first and second alloys comprises gold.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2'009/98 |
Oct 1998 |
CH |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This is a divisional of application No. 09/190,538, filed Nov. 12, 1998, claiming priority on Switzerland Application No. 2009/98 filed on Oct. 2, 1998, which priority is again claimed for the present application.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09190538 |
Nov 1998 |
US |
Child |
09994297 |
Nov 2001 |
US |