This application claims the benefit of the filing date under 35 U.S.C. § 119(a)-(d) of European Patent Application No. 13158147.2 filed Mar. 7, 2013.
The present invention relates to an optical receiver for receiving an optical signal, for converting the optical signal into an electric signal and for outputting the electrical signal. Particularly, the optical receiver is an optical data receiver for receiving data at a predetermined data rate. The present invention also relates to a transceiver including the optical receiver/optical data receiver of the present invention and a transmitter for receiving an electric signal, converting the electric signal into an optical signal and outputting the optical signal.
In order to support the communication requirements of high-speed data transmission applications at a bit rates of 25 Gpb, optical links are used when links through an electrical wire have a too low bandwidth. When using an optical link for transmitting an electrical signal from a first electronic component to a second electronic component, the electrical signal is first converted into an optical signal, then the optical signal is coupled into an optical fiber through an optical transmitter, and the optical signal is then transmitted to the second electronic component through the optical fiber. At the second electronic component, the optical signal is received by an optical receiver and converted back into an electrical signal. Then the converted electrical signal is further processed in the second electronic component.
Each driver of the driver array 102 receives at its input (not shown in
Each photodiode 114 of the array of photodiodes 104 receives an optical signal from an optical fiber (not shown in
As the signal lines 112 connecting outputs of the driver array 102 with respective inputs of the VCSEL array 103 (Driver-VCSEL channels) and the signal lines connecting anodes 114 of the photodiode array 104 with respective inputs of the TIA array 105 (in the following denoted as PIN-TIA channels) are of single-end type, so single-end-type crosstalk occurs among these lines. The single-end type crosstalk occurs where there is a transfer of signal power from one or a plurality of signal lines (aggressor lines) to another signal line (victim line) through the common ground plane 101. At the victim line, crosstalk overlays with the signal carried by the victim line, thereby degrading its signal quality. Crosstalk can occur not only among Driver-VCSEL channels and among PIN-TIA channels, but also among Driver-VCSEL and PIN-TIA channels, if the array of photodiodes 104 is isolated from ground by the opening 115 provided in the ground plane 101.
The opening 115 formed in the ground plane 101 and surrounding the photodiode array 104 has a rectangular shape and a size of approximately 1 mm×0.4 mm. The size of the opening is mainly determined by the dimensions of the photodiode array 104 and cannot be reduced arbitrarily. At high frequencies, the opening 105 acts as a slot resonator whose fundamental frequency is determined by the geometric dimension of the opening 105. A rectangular opening having a size of 1 mm×0.4 mm has a resonant frequency of about 38 GHz. This is about 3×12.5 GHz, wherein 12.5 GHz is the fundamental frequency of the 25 Gbps data transmission. As the opening 115 acts as a slot resonator whose fundamental frequency is almost a multiple of the fundamental frequency of the 25 Gbps data transmission, the opening 115 attracts signal current output by drivers of the driver array 102. This resonant effect, which occurs at approximately 38 GHz, promotes crosstalk from Driver-VCSEL channels to PIN-TIA channels. Particularly, PIN-TIA channels that are placed near to the driver array 102 are affected by crosstalk coming from Driver-VCSEL channels.
The resonant behavior of the opening 115 also promotes crosstalk among PIN-TIA channels. This increases with increasing number of photodiodes included in the array of photodiodes 104. When the photodiode array 104 includes 8 or 12 channels, the crosstalk level among PIN-TIA channels can reach an intolerable value.
For a photodiode array including twelve channels, the opening provided in the ground plane and surrounding the photodiode array exhibits a resonance at about 15 GHz. This resonance is close to the fundamental frequency (12.5 GHz) of the 25 Gbps data transmission and thus also promotes crosstalk, thereby degrading signal quality of the PIN-TIA channels.
Crosstalk in the PIN-TIA channels severely degrades the signal quality of the signals input to the TIA array 105, especially of those input to TIAs that are close to the driver array 102.
It is therefore an object of the present invention to reduce crosstalk in the PIN-TIA channels of an optical receiver. An optical receiver is disclosed having a dielectric non-conductive substrate. A ground plane is positioned on the dielectric non-conductive substrate. An optical signal converting photodiode is also positioned on the dielectric non-conductive substrate, and has an optical signal receiver and an electrical signal output. An electrical signal amplifier is provided having an input connected to the electrical signal output of the optical signal converting photodiode. A first opening is positioned in the ground plane and surrounds the optical signal converting photodiode. The first opening has a resonance frequency higher than a fundamental frequency such that crosstalk is reducible at the input of the electrical signal amplifier.
The invention will now be described by way of example with reference to the accompanying Figures, of which:
Each photodiode 414 receives an optical signal from an optical fibre (not shown), converts the received optical signal into a single ended electrical signal, and outputs this through the photodiode's 414 anode 417 and cathode 416 to the inputs of a respective amplifier. The anode 417 of a photodiode 414 is connected through a signal line 418 to an input of the respective amplifier, and the cathode 416 of a photodiode of the array of photodiodes 404 is connected through a ground line 419 to another input of the respective amplifier.
Each opening 415 of the four openings has a rectangular shape and a size of approximately 0.3 mm×0.25 mm, so that its resonance frequency is sufficiently higher than 37.5 GHz, preferably 50 GHz or higher. Thus, for this embodiment, the sufficiently higher resonance frequency is achieved by setting the resonance frequency of the slot resonance to 50 GHz or higher. The minimal length of an opening 415 in the length's direction of the array of photodiodes 404 is determined by the dimensions of a photodiode 414, particularly by the distance between anode and cathode along the optical aperture, and cannot be reduced arbitrarily. As the resonant frequency of each opening 415 is higher than three times 12.5 GHz, which is the fundamental frequency of the 25 Gbps data transmission, the opening 415 does not act as a slot resonator with the fundamental frequency of 37.5 GHz. Consequently, the opening 415 does not attract signal current through the ground plane 401 if a 25 Gbps data transmitter is placed on the same non-conductive substrate.
Since the openings 415 do not show a resonant effect at 37.5 GHz, crosstalk of an external signal with a fundamental frequency of 12.5 GHz into the signal line connecting the anode of a photodiode 414 and the input of a respective amplifier (PIN-TIA channels) is significantly reduced compared to the conventional transceiver 100 (
The openings 415 also reduce crosstalk between individual PIN-TIA channels of the optical receiver 400 if the fundamental frequency of the signals output by the photodiodes of the array of photodiodes 404 is about 12.5 GHz.
Referring now to
As discussed above, the opening 415 of the optical receiver 400 in the first embodiment has a resonance frequency that is higher than three times a predetermined fundamental frequency. The first opening 515 and the second opening 525 of the optical receiver 500 in the second embodiment have resonant frequencies that are also higher than three times the predetermined fundamental frequency.
Although the ground plane 501 of the optical receiver 500 includes a first opening 515 and a second opening 525 for each photodiode 514, one of ordinary skill in the art would also understand that the first opening 515 and the second opening 525 combination can be positioned in the ground plane 501 for a one or more of the photodiodes 514 of the array of photodiodes 504. Further, the first opening 515 and the second opening 525 can be used on one or more of the photodiodes 514 in combination with just the first opening 415 on one or more of the photodiodes 514.
Placing a second opening 525 adjacent to a first opening 515 that surrounds a photodiode 514 of the array of photodiodes 504, reduces crosstalk in the PIN-TIA channels of the optical receiver effectively.
The transceiver 600 includes a dielectric non-conductive substrate (not shown), a ground plane 601 positioned on the dielectric non-conductive substrate, an array of four drivers 602, an array of four laser diodes (VCSEL) 603 connected to respective outputs of the drivers of the array of drivers 602, and an optical receiver 650. In
Each driver of the driver array 602 has inputs (not shown) that receive an electrical signal from a motherboard of a computer (not shown), converts the received electrical signal into a single ended electrical signal, and outputs this single ended electrical signal through output terminals 610 and 611 to inputs of a laser diode of the array of laser diodes 603. The output terminal 611 of a driver of the driver array 602 is connected through a ground line 613 to an input of a respective laser diode of the array of laser diodes 603. The output terminal 610 of a driver of the driver array 602 is connected through a signal line 612 to another input of the respective laser diode. Each laser diode of the array of laser diodes 603 converts the single ended electrical signal received at the input to an optical signal, and outputs this optical signal into an optical fibre.
Since each opening 615 positioned in the ground plane 601 of the transceiver 600 has a resonance frequency that is higher than 3 times of the fundamental frequency corresponding to the 25 Gbps data communication, none of the openings 615 exhibits a resonance effect at 38 GHz, and consequently, do not attract current from the Driver-VCSEL channels of the transceiver 600. Therefore, crosstalk in the PIN-TIA channels of the optical receiver 615 is reduced to a tolerable value.
In the transceivers 600 and 700, the fundamental frequency of the single ended electrical signals output by the drivers of the array of drivers 602, which corresponds to the fundamental frequency of the signal to be transmitted, is identical to the fundamental frequency of the optical signals received at the photodiodes of the optical receiver. In the case of a 25 Gbps data communication, the fundamental frequency of the signals to be transmitted/received is 12.5 GHz. However, the present invention is not limited to 12.5 GHz, but is also applicable to other fundamental frequencies of the signals to be transmitted/received by adjusting the dimensions of the openings 415, 515 and 525 accordingly.
A transceiver according to the present invention is not limited to cases where the fundamental frequency of the signals to be transmitted is identical to the fundamental frequency of the signals to be received. On the contrary, one of ordinary skill in the art would understand that the fundamental frequency of the signals to be transmitted can be different from the fundamental frequency of the signals to be received.
Although the optical receivers shown in
Although the transceivers shown in
Although the openings provided in the ground planes of the optical receivers according to the first and second embodiments have a rectangular shape, the present invention is not limited to openings having a rectangular shape, but is also applicable to openings having a circular shape, an oval shape, a rhombic shape, or any other shape. The shape can we a wide variety of shapes, so long as the resonance frequency of the openings is higher than three times the fundamental frequency of the signal that induces crosstalk in the PIN-TIA channel.
Number | Date | Country | Kind |
---|---|---|---|
13158147 | Mar 2013 | EP | regional |
Number | Name | Date | Kind |
---|---|---|---|
5206986 | Arai | May 1993 | A |
5401957 | Suzuki | Mar 1995 | A |
6181718 | Kobayashi | Jan 2001 | B1 |
6364541 | Nesnidal | Apr 2002 | B1 |
6487087 | Langley | Nov 2002 | B1 |
6538790 | Hatakeyama | Mar 2003 | B1 |
7423483 | Voo | Sep 2008 | B1 |
7427718 | Ng | Sep 2008 | B2 |
7720393 | Hakomori | May 2010 | B2 |
8019187 | Dutta | Sep 2011 | B1 |
8154901 | Lee | Apr 2012 | B1 |
8891975 | Yagisawa | Nov 2014 | B2 |
8936405 | Tamura | Jan 2015 | B2 |
9814153 | Kaikkonen | Nov 2017 | B2 |
20030081297 | Hasegawa | May 2003 | A1 |
20040090289 | Chang | May 2004 | A1 |
20070264022 | Hakomori | Nov 2007 | A1 |
20080123302 | Kawano | May 2008 | A1 |
20080187321 | Kawamura | Aug 2008 | A1 |
20090003844 | Adamiecki | Jan 2009 | A1 |
20090196626 | Nakao | Aug 2009 | A1 |
20120070121 | Ito | Mar 2012 | A1 |
20120098626 | Oshima | Apr 2012 | A1 |
20120162932 | Contreras | Jun 2012 | A1 |
20120170944 | Yagisawa et al. | Jul 2012 | A1 |
20120262885 | Ikeda | Oct 2012 | A1 |
20140049343 | Sakai | Feb 2014 | A1 |
20140252612 | Nakagawa | Sep 2014 | A1 |
20150147066 | Benjamin | May 2015 | A1 |
20150264803 | Kaikkonen | Sep 2015 | A1 |
20150296648 | Kaikkonen | Oct 2015 | A1 |
20160070061 | Fasano | Mar 2016 | A1 |
20160154177 | Han | Jun 2016 | A1 |
20170294720 | Murakowski | Oct 2017 | A1 |
Entry |
---|
Jin et al; Electromagnetic Crosstalk Penalty in Serial Fiber Optic Modules; 2004, IEEE,pp. 912-915. |
Jin et al; Electromagnetic Crosstalk Penalty in Serial Fiber Optic Modules; 2004, IEEE; pp. 912-915. |
European Search Report, Application No. 13158147.2, dated Oct. 15, 2013, 6 pages. |
Lars Dillner, Roger Loow, Elsy Odling, Eva Backlin and Thomas Aggerstam, GaAs PIN photo detectors for 10 Gbit/s data communication, Photodetector Materials and Devices VII, Proceedings of SPIE, vol. 4650 (2002), 5 pages. |
N. Bar-Chaim, K.Y. Lau and I. Ury, A. Yariv, High-Speed GaAlAs/GaAs p-i-n photodiode on a semi-insulting GaAs substrate, Appl. Phys. Lett. 43 (3), Aug. 1, 1983, 2 pages. |
Number | Date | Country | |
---|---|---|---|
20140255042 A1 | Sep 2014 | US |