The present patent application claims the priority of German patent application DE 10 2023 213 275.3, filed on Dec. 22, 2023, the entire content of which is incorporated by reference herein.
The invention relates to an optical system for a metrology system for measuring an object. The invention further relates to a metrology system for measuring an object using such an optical system.
A metrology system of the aforementioned type is known from US 2012/0008123 A1, for example. Further systems for measuring lithographic masks are known from the specialist articles by Na J. et al. “Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask,” Proc. of SPIE Vol. 10145, 101450M-1, by Goldberg K. et al. “Actinic mask imaging: recent results and future directions from the SHARP EUV microscope,” Proc. of SPIE Vol. 9049, 90480Y-1, and by Naulleau et al. “Electro-optical system for scanning microscopy of extreme ultraviolet masks with a high harmonic generation source,” Optics Express, Vol. 22, 20144, 2014. Another metrology system is known from U.S. Pat. No. 9,904,060. DE 10 2017 205 629 A1 discloses a method and an apparatus for repairing defects of a photolithographic mask for the EUV range. DE 101 25 870 A1 discloses an optical element for imaging objects and/or for focusing electromagnetic beams or beams of elementary particles. DE 102 42 431 A1 discloses an element for focusing electromagnetic beams or beams of elementary particles. DE 102 61 137 A1 discloses a projection optical unit for lithography and a mirror for same. DE 10 2022 114 158 A1 discloses an apparatus and a method for characterizing a microlithographic mask.
A problem addressed by the present invention is that of developing an optical system for a metrology system in such a way that zone plate design options for the optical focusing component are optimized in order to improve application options for the metrology system.
According to the invention, this problem is solved by an optical system having the features specified in Claim 1 and also solved according to the invention by an optical system having the features specified in Claim 2.
The invention identified that zone plates offer design options that lead to optical properties which can be used to improve the application options of the metrology system.
A chromatic correction of the zone plate according to a first aspect avoids unwanted chromatic aberrations.
An aspherical correction of the zone plate according to a further aspect avoids unwanted aberrations and/or creates the possibility of compensating or correcting aberrations that are created via other components of the metrology system and/or creates the possibility of selectively introducing aberrations into the metrology system.
A reflective embodiment of the zones of the zone plate according to a further aspect leads to the possibility of increasing an illumination light throughput of the metrology system. This can improve measurement accuracy and/or reduce requirements for a light source of the metrology system.
A configuration of a zone plate according to a further aspect that is selective with regard to at least one predetermined order of diffraction also leads to an increase in throughput and can moreover avoid the occurrence of undesirable extraneous light or the occurrence of undesirable channel crosstalk in a detection device that is spatially resolved in that case. The zone plate may be embodied in particular for chromatic correction of a diffraction of the illumination light.
In some implementations, a focal length of the optical focusing component, i.e. the zone plate, cannot exceed 10 mm. For example, the focal length can be 5 mm or 0.5 mm. An optical focusing component with a correspondingly short focal length allows for a correspondingly small illumination focus with the advantages associated therewith, for example in terms of resolution in object measurement. Corresponding advantages particularly take effect in the reflective embodiment of the zone plate and in the embodiment of the zones in the zone plate, according to Claim 2, such that one order of diffraction of the illumination light is preferred.
A total number of zone rings according to Claim 3 leads to an advantageous diffraction effect of the zone plate. The number of zone rings can be greater than 150, can be greater than 200 and can also be greater than 250. The number of zone rings is regularly less than 1000.
An embodiment of the zone plate as transmitting phase plate according to Claim 4 has proven its worth in practice.
An embodiment of the zone plate as a photon sieve according to Claim 5 allows for a chromatic correction of the zone plate in particular. A pinhole diameter in the photon sieve can be of the order of a radial extent of a width of the respective zone ring. Reflective elements of a corresponding extent can also be used instead of pinholes but are also referred to as pinholes below. The pinholes can be distributed randomly over the respective zone ring. The pinholes can have a binary distribution within a specific zone ring, i.e. a cumulative circumference of the holes of all pinholes can correspond to a cumulative interspace circumference of interspaces between respective pinholes adjacent in the circumferential direction of the respective zone ring.
An embodiment of the photon sieve according to Claim 6 avoids undesirable extraneous light. The preferred order of diffraction can be a plus/minus first order of diffraction. The photon sieve may be embodied such that a zeroth order of diffraction is suppressed.
An aspherical correction characteristic according to Claim 7 represents an option for the design of an aspherically corrected zone plate. An aspherical correction may have a radial distribution of the ring widths of the zone rings that corresponds to that of one rotationally symmetric Zernike polynomial or the sum of a plurality of rotationally symmetric Zernike polynomials, for example the Zernike polynomial Z36. An aspherical correction may also have a distribution of the ring widths of the zone rings that deviates from rotational symmetry and corresponds to that of any desired Zernike polynomial or the sum of a plurality of any desired Zernike polynomials, for example the Zernike polynomial Z8.
A design according to Claim 8 enables an embodiment of the zone plate as a reflective zone plate. The reflection layer can be embodied as a multilayer layer.
A design according to Claim 9 for example allows the zone plate to be designed as a chromatically corrected zone plate. In particular, the zone layer may comprise a plurality of absorber layers, wherein different absorber material can be used in each absorber layer. The optionally different absorber layers can then be assigned to zones that are optimized for different wavelengths.
A design according to Claim 10 enables a highly reflective embodiment of the zone plate.
Insofar as the zone layer comprises a multilayer portion of the reflection layer, a chromatically corrected zone plate can be realized in turn, wherein a zone layer portion made of an absorber layer and another zone layer portion are designed as a reflective multilayer layer.
An embodiment according to Claim 11 results in a variety of design options for the zones of the zone plate. The zones can have a sawtooth profile, allowing a blazed embodiment of the zone plate. The zones can be embodied as a step profile with at least two steps of differing step height. This can be used, for example, to approximate a continuous cross-sectional profile of the zones, for example approximate a sinusoidal or blazed profile that is as complete as possible. A rectangular envelope of a respective zone ring can be subdivided into a plurality of radially spaced profile sections of the same step height. This can be used to specify specific preferred orders of diffraction of the illumination light that are guided over the zone plate.
The advantages of a metrology system according to Claim 12 correspond to those which have already been explained above with reference to the optical system. A spectral width Δλ/λ (FWHM, full width at half maximum) of the illumination light created by the light source can be at least 5×10−4, at least 1×10−3, at least 3×10−3, at least 5×10−3, at least 1×10−2, at least 1×10−1, and can lie in the range between 1/250 and 1/300, for example.
The optical system can be a constituent part of a scanning EUV microscope. A scanning EUV microscope is otherwise described in the specialist article “Electro-optical system for scanning microscopy of extreme ultraviolet masks with a high harmonic generation source,” Optics Express, Vol. 22, 20144, 2014, by Naulleau et al.
An EUV light source according to Claim 13 enables actinic measurement, in particular of an EUV lithography mask as the object. The EUV light source can be a plasma light source pumped by a solid-state laser in particular or else be a high harmonic generation (HHG) light source.
Exemplary embodiments of the invention are explained in detail below with reference to the drawing, in which:
The light source 5 is, e.g., an EUV light source for creating the EUV illumination light 4 with a central used wavelength in the range between 5 nm and 30 nm, in particular at 13.5 nm. A spectral width Δλ/λ) (FWHM, full width at half maximum) of the EUV illumination light 4, which is used to illuminate the object 2, is at least 1×10−4 and may lie in the range between 1/250 and 1/300, for example. The light source 5 can be, e.g., a plasma light source or a HHG light source. In the schematically illustrated variant of the light source 5, the latter comprises a pump laser 5a in the form of a Ti:sapphire laser, whose pump light 5b is focused by use of a mirror focusing optical unit into a gas cell 5c for the creation of the illumination light 4. A pinhole 5d of the light source 5 serves to separate the illumination light 4 from the pump light 5b.
The pinhole 5d can additionally be used to separate the used illumination light 4 from in particular unwanted debris which is also carried along. An extraneous light filter 7 for separating the used illumination light 4 from undesirable wavelength components contained in the beam path can be arranged in the beam path of the illumination light 4 downstream of the light source 5.
Downstream of the light source 5, the illumination light 4 is guided by an optical system 8 of the metrology system 1. The optical system 8 comprises an EUV mirror 9 and an optical focusing component in the form of a zone plate 10, various exemplary embodiments of which will be explained below. The optical focusing component 10 is arranged in the beam path of the illumination light 4 between the light source 5 and an object field 12 in an object plane 13 of the optical system 8. The optical focusing component 10 serves to create an illumination focus 14 in the beam path of the illumination light 4 downstream of the optical focusing component 10.
A focal length of the optical focusing component 10 is no more than 10 mm and typically 0.5 mm.
The zone plate 10 is embodied to be transmissive to the illumination light 4, and thus allows at least portions of the latter to pass. The zone plate 10 is embodied as a transmitting phase plate, wherein zones of the zone plate 10 have a different effect on the phase of illumination light 4 incident on the zone plate 10.
To clarify positional relationships between components of the metrology system, a Cartesian xyz coordinate system is drawn in
An object holder 15 of the optical system is used to hold the object 2 in the object plane 13 such that a portion of the object 2 is located in the object field 12. Via an actuator 16, the object holder 15 is displaceable perpendicular to the object plane 13, as is illustrated by a double-headed displacement arrow Δz in
A chief ray angle α, at which the illumination light 4 is incident on the object field 12, can be less than 6°. The chief ray angle refers to the angle between the chief ray and a direction perpendicular to the object plane.
An object-side numerical aperture of the illumination light beam path can be in the range between 0.075 and 0.2, in particular of the order of 0.1.
The object 2 is embodied as a reflective object. Illumination light 4 reflected by the object 2 is guided as detection light from the optical system 8 to the detection device 6.
An aperture stop 17, which is shown in
Depending on the embodiment, the detection device 6 can have two, three, five, ten or even more sensor elements. The detection device 6 can be designed as a sensor line or as a two-dimensional sensor array, for example in the form of a charged coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) array. The detector 16 of the detection device 6 is arranged in an arrangement or detection plane 6a.
The detector 16 is used to capture a diffraction field of an object point of the object field 12. The light transmitted through the aperture stop 17 is integrated by use of the detector 16 and defines an intensity ascertained for the respective measured object point. Scanning over the object 2 results in an image of the object 2 from the image points hereby assigned to the individual object points.
The zone plate 10 serves to predetermine an illumination angle distribution and/or an illumination intensity distribution of the illumination light 4 over the object field 12, in particular a point illumination of the object, which is adapted to an illumination setting of a projection exposure apparatus for EUV lithography. Moreover, the chief ray angle α is also specified by way of the zone plate 10.
A zone plate 19, which fundamentally has the function of the zone plate 10 according to
The respective ring radius Ri refers to an outer radius of the respective zone ring ZRi. For i≥2, each zone Zi is defined by an inner boundary, i.e. the ring with inner radius ri−1, and an outer boundary, i.e. the ring with radius r1.
The number N of zone rings ZRi is significantly understated in
The zone plate 10 or 19 has an entrance pupil diameter D that corresponds to a diameter of the outermost zone ZN. The diameter D can be in the range of between 10 μm and 250 μm, for example in the range of between 50 μm and 150 μm and for example can be around 80 μm.
Furthermore, the zone plate 10, 19 has a focal length f. The focal length f can be in the range of between 0.25 mm and 10 mm, for example at 0.5 mm.
The following applies to a radial extent Δr1 of an innermost zone ring ZR1, i.e. the outer boundary of inner zone Zi: 20 nm≤Δr1≤200 nm. The innermost zone ring ZR1 has the shape of a circular disc. This radial extent Δr1 can be of the order of 80 nm, for example. This radial extent Δri generally decreases towards the radially outer zone rings ZRi in a defined manner, and so there is a desired diffraction effect of the zone plate 10, 19 for the illumination light 4.
With reference to
A zone plate is an optical component having at least two zones, wherein a portion of the illumination light that is incident on a first of the zones interacts by diffraction with a further portion of the illumination light that is incident on a further one of the zones. Regarding the zone plates 10, 19 described above in particular referring to
This photon sieve embodiment of the zone plate 20 contains a multiplicity of holes or reflector structures 21a which are arranged on the different zone rings ZR1 to ZRN and are referred to as pinholes hereinafter. When the zone plate 20 is used instead of the zone plate 10 in the example of
The process description according to
A zone plate with closed zone rings ZRi as shown on the left in
An innermost of the zone rings, ZR1, has a total of six pinholes PH11 to PH16 in the embodiment according to
A diameter of the respective pinholes PH1j corresponds to a radial width, i.e. a radial extent, of the respective zone ring ZRi. In this example, the pinholes are positioned such that for each pinhole PH1j, the distance between the portion of the pinhole farthest from the center of the zone plate to the center of the zone plate is equal to the outer radius of the zone ring ZRi, and the portion of the pinhole closest to the center of the zone plate to the center of the zone plate is equal to the inner radius of the zone ring ZRi.
A pinhole diameter can also be greater than the radial extent of the respective zone ring and can be 1.5 times, 3.5 times or even 5.5 times the radial extent. A ratio between the pinhole diameter and a radial extent of the respective zone ring can therefore be in the range of between 0.5 and 10. A diameter of a focus for point illumination of the object 2 or a focus quality provided via the zone plate 10 can be improved by adjusting the ratio between the pinhole diameter and the radial extent of the respective zone ring. In this regard, reference is made to R. Menon's doctoral thesis: Diffractive optics for maskless lithography and imaging, Thesis (Ph. D.)—Massachusetts Institute of Technology, Dept. Of Electrical Engineering and Computer Science, 2003.
A diffraction effect of the photon sieve of the zone plate 20 can be predetermined in defined fashion by way of the radial distribution of the zone rings ZRi, the dimensioning of the pinholes PH) and the number of pinholes PH1j in the respective zone ring ZRi.
A person skilled in the art finds design details of photon sieves in the technical article “Huang, K. L. (2017). Huang, K., Liu, H., Si, G., Wang, Q., Lin, J., Teng, J., Laser & Photonics Reviews 2017, 11, 1700025. Laser & Photonics Reviews, p. 1700025.”
The pinholes PH1j of a particular zone ring ZRj can be distributed in binary form within this zone ring ZRj. Alternatively, the pinholes PH1j can be in non-binary form or gray scale, such as being 25%, 50%, and/or 75% transmissive or reflective.
With respect to a distribution in binary form, a cumulative circumference of holes, i.e. a pinhole diameter sum of all pinholes PH1j within this zone ring ZRj, then corresponds to a cumulative interspace circumference of the interspaces between the pinholes PH1j adjacent in the circumferential direction within this zone ring ZRj.
A radius crossing the center of the pinholes PH1j within the respective zone ring ZRj thus on exactly half of its circumference crosses these pinholes, whereas on the other half of its circumference runs through the interspaces between these pinholes. For the innermost zone ring ZR1, the cumulative circumference of holes is thus six times the diameter of a single pinhole PHi1. The cumulative interspace circumference is then the same size as the cumulative circumference of holes within this zone ring ZR1. In the alternative, non-binary case, the cumulative circumference of holes within this zone ring may differ from the cumulative interspace circumference.
In the
A beam 3 of illumination light 4 incident from the left, schematically indicated by an arrow, is diffracted towards the illumination focus 14 in the object plane 13 in a +1st order of diffraction 21.
A zeroth order of diffraction 22 passes through the photon sieve zone plate 20 without being diffracted, wherein a surface-related intensity in the region of this zeroth order of diffraction is orders of magnitude lower than the intensity of the +1st order of diffraction in the illumination focus 14. Depending on the arrangement of the pinholes PH1j, the zeroth order of diffraction can also be suppressed to an even greater extent than what is indicated in
Higher orders of diffraction are effectively suppressed on account of the arrangement of the pinholes PH1j of the photon sieve zone plate 20.
The photon sieve zone plate 20 can be embodied in such a way that a chromatic longitudinal aberration is avoided. In the first order of diffraction, different diffraction light wavelengths of the illumination light 4 are thus focused on the same z-focal position of the illumination focus 14. The photon sieve zone plate 20 therefore is chromatically corrected.
The photon sieve 20 is embodied such that the illumination focus 14 of the +1st order of diffraction is preferred in comparison with illumination foci of further orders of diffraction, for example +2nd, +3rd, . . . , as regards the used illumination intensity guided by the photon sieve zone plate 20. In this document, when we say that “the illumination focus 14 of the +1st order of diffraction is preferred in comparison with illumination foci of further orders of diffraction,” we mean that the illumination intensity of the illumination focus 14 of the +1st order of diffraction is higher than the illumination foci of further orders of diffraction.
With reference to
Starting point for the design of the aspherical zone plate 24 is a raw zone plate 25 with spherical wavefront effect of the zone rings ZRi, as shown on the left in
An aspherical correction function 26 is impressed on the zone distribution of this raw zone plate 25, as illustrated in
This aspherical correction results in a discontinuous distribution of ring widths Δri or radial extents of the zone rings ZRi, as illustrated in
The reflective zone plate 27 has a zone layer 28, which comprises the zones Zi arranged on the zone rings ZRi. Zones Zi of the zone layer 28 of the zone plate 27 each have a rectangular profile or an approximately rectangular profile.
This zone layer 28 is applied to a base reflection layer 29 of the zone plate 27. At the same time, the zone layer 28 is part of an overall reflection layer 28, 29, which is constructed as a multilayer layer with alternating laminas L1, L2 or L1, L2, L3 made of materials with different refractive indices.
The zone layer 28 itself represents a multilayer portion of the overall reflection layer 28, 29. The zones Zi of zone layer 28 themselves are constructed as stacks of individual laminas Li of the multilayer layer.
In the zone plate 30, the zones Zi are designed as a step profile with steps S1 and S2. A lower step profile of the step S1 protrudes radially to both sides beyond the upper step profile of the step S2, and so step protrusions of the lower step profile S1 arise on both sides of the upper step profile S2. A step profile like that shown in
The upper step profiles S2 of the zones Zi are made of absorber material, and the lower step profiles S1 are embodied as multilayer layers with alternating laminas Li, as already explained above in connection with
The zone layer 28 of the reflective zone plate 30 is carried in turn by a base reflection layer 29 corresponding to the embodiment according to
The absorber material absorbs the illumination light 4 at least in part or even in full.
This zone layer with the zones Zi made of the absorber material is carried by the reflection layer 29 in the zone plate 31.
Zones Zi of a zone layer 28 of the reflective zone plate 32 are step-shaped like the zones Zi of the zone plate 30 according to
Examples of materials for the individual laminas Li of the multilayer layers are molybdenum (Mo), silicon (Si) or else beryllium (Be). Examples of materials for the absorber material are TiN, Cr, TaN, TaBN and TaBO.
The zones Zi of the zone layer 28 are also carried by the multilayer reflection layer 29 in the zone plate 32.
The zone plates 30, 31 and 32 each exhibit different combinations regarding manufacturing effort and optical properties.
Zone plates like the zone plates 30, 31 and 32 can be used to increase a wavelength bandwidth of a zone plate. The resulting zone plate can be understood to be a superimposition of a plurality of zone plates, for example a superimposition of two or three zone plates, each of which is optimized for a different target wavelength. One of these wavelengths can be the wavelength of the used illumination light 4. The other wavelengths can be adjacent wavelengths or else more distant wavelengths.
This can be used to design zone plates like the zone plates 30, 31, 32, which are chromatically corrected with respect to the used wavelength of the illumination light 4. A person skilled in the art finds details regarding the design of corresponding chromatically corrected zone plates in the technical article “Cai. H. et al. (2019), Ultrathin transmissive metasurfaces for multi-wavelength optics in the visible. Appl. Phys. Lett., S071106.”
An oblique surface 34 of the respective zone Zi can be adapted with respect to its surface angle s to a plate plane 35 of the zone plate 33, which runs parallel to the xy-plane, such that a blazed zone plate 33 results. In that case, the angle s is a blaze angle which can be adapted at the zone plate 33 to the used wavelength of the illumination light 4 such that only a +1st order of diffraction of the illumination light 4 is guided constructively by the zone plate 33.
This is schematically indicated in
For the zone plate 33, the +1st order of diffraction thus represents a predetermined order of diffraction which is preferred in comparison with at least one further order of diffraction as regards a used illumination light intensity guided by the zone plate 33.
A diffraction effect of such a rectangular profile design of the zones Zi of the zone plate 35 is illustrated in
With regard to the diffraction characteristic likewise indicated in
In the zone plate 37, the rectangular envelope 38 is subdivided into a plurality of radially spaced profile sections A1, A2,A3 and A4 of the same step height. Radial extents of the profile sections Ai and the radial distances ri between the adjacent profile sections Ai, Ai+1 and a step height ΔS are matched to one another in such a way that the diffraction effect as indicated in
For the zone plate 39, the +/−1st orders of diffraction accordingly represent predetermined orders of diffraction which are preferred in comparison with the other orders of diffraction as regards the used illumination light intensity guided by the zone plate.
In a manner comparable to the profile according to
The step profile of the zone plate 40 approximates the sinusoidal profile according to
Accordingly, the diffraction effect for the zone plate 40 according to
To measure the structure of the object 2, an image of the object structure in the object field 12 is constructed by the detection device 6 by successively scanning the individual points of the object structure in the x/y direction. Depending on the measurement method, either a single image is recorded or an image stack (aerial image) in a plurality of z-positions, in which case the object 2 is displaced into corresponding z-positions by use of the object holder 15 and the actuator 16.
Although the present invention is defined in the attached claims, it should be understood that the present invention can also be defined in accordance with the following embodiments:
Embodiment 1: Optical system (8) for a metrology system (1) for measuring an object (2),
Embodiment 2: Optical system (8) for a metrology system (1) for measuring an object (2),
Embodiment 3: Optical system according to Embodiment 1 or 2, characterized in that the zones (Zi) are arranged in the form of a ring, with the zone rings (Zri) in the zone plate (10; 19; 20; 24; 27; 30; 31; 32; 33; 35; 36; 37; 39; 40) totalling more than 100.
Embodiment 4: Optical system according to any of Embodiments 1 to 3, characterized in that the zone plate (10; 20; 24; 33; 35; 36; 37; 39; 40) is embodied as a transmitting phase plate, the zones (Zi) each having a different influence on the phase of the illumination light (4) incident on the zone plate (10; 20; 24; 33; 35; 36; 37; 39; 40).
Embodiment 5: Optical system according to any of Embodiments 1 to 4, characterized in that the zone plate (20) is embodied as a photon sieve.
Embodiment 6: Optical system according to Embodiment 5, characterized in that the photon sieve (20) is embodied such that an illumination light focus (14) of a specific order of diffraction (+1) is preferred in comparison with an illumination light focus of at least one further order of diffraction as regards the used illumination light intensity guided by the zone plate.
Embodiment 7: Optical system according to any of Embodiments 1 to 6, characterized in that an aspherical correction is impressed via a discontinuous radial distribution of ring widths (Δri) of the zone rings (ZRi) of the zone plate or of pinholes of the photon sieve (20).
Embodiment 8: Optical system according to any of Embodiments 1 to 7, characterized in that a zone layer (28) comprising the zones (Zi) is applied to a reflection layer (29) of the zone plate (27; 30; 31; 32).
Embodiment 9: Optical system according to Embodiment 8, characterized in that the zone layer (28) comprises at least one absorber layer made of an absorber material.
Embodiment 10: Optical system according to Embodiment 8 or 9, characterized in that the reflection layer (28, 29) is embodied as a multilayer layer, wherein the zone layer (28) comprises at least a multilayer portion of the reflection layer (28, 29).
Embodiment 11: Optical system according to any of Embodiments 1 to 10, characterized in that at least some of the zones (ZRi) deviate from a rectangular profile in the meridional section of the zone plate (33; 36; 37; 39).
Embodiment 12: Metrology system (1) for measuring an object (2),
Embodiment 13: Metrology system according to Embodiment 12, characterized in that the light source (5) is an EUV light source.
A number of implementations have been described. Nevertheless, it will be understood that various modifications may be made. For example, the elements of one or more implementations may be combined, deleted, modified, or supplemented to form further implementations. In addition, other components may be added to, or removed from, the described metrology system. For example, the dimensions, radii, radial extents, shapes, and/or positions of various components of the zone plates, such as zone rings, reflective structures, or holes, can have values different from the examples described above. Accordingly, other implementations are within the scope of the following claims
Number | Date | Country | Kind |
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102023213275.3 | Dec 2023 | DE | national |