Claims
- 1. An integrated nanosecond signal generator and radiator apparatus comprising:
- an electrical energy storage device coupled to a source of electrical voltage and including a transmission line comprised of a dielectric member sandwiched between upper and lower radial type electrical conductors which are disposed parallel to each other;
- a photoconductive semiconductor switch coupled to said energy storage element and centrally located beneath said upper conductor, said switch becoming conductive upon the application of a predetermined type of light energy so as to cause a high amplitude, narrow output video pulse of nanosecond pulse width dimensions to be generated at the radial center of said upper and lower radial type conductors, and
- wherein one of said radial type conductors further comprises antenna mans for radiating the RF energy of the generated video pulse, and
- wherein said upper conductor includes aperture means thereon for the application of light energy to said switch.
- 2. The apparatus according to claim 1 wherein said antenna means comprises a pattern of metallization.
- 3. An integrated nanosecond signal generator and radiator apparatus comprising:
- an electrical energy storage device coupled to a source of electrical voltage and including a transmission line comprised of a dielectric member sandwiched between upper and lower radial type electrical conductors which are disposed parallel to each other, one of said radial type conductors further comprising an antenna means for radiating the RF energy of the generated video pulse, said antenna means having a pattern of metallization which has a plurality of stripline antenna element;
- a photoconductive semiconductor switch coupled to said energy storage element and centrally located beneath said upper conductor, said switch becoming conductive upon the application of a predetermined type of light energy so as to cause a high amplitude, narrow output video pulse of nanosecond pulsewidth dimensions to be generated at the radial center of said upper and lower radial type conductors, and
- wherein said upper radial type conductor includes aperture means thereon for the application of light energy to said switch.
- 4. The apparatus according to claim 2 wherein said pattern of metallization comprises a set of mutually parallel stripline antenna elements.
- 5. The apparatus according to claim 3 wherein said one conductor comprises the lower conductor.
- 6. The pulse signal generator according to claim 1 wherein antenna means comprise said lower conductor and wherein said switch comprises a semiconductor switch centrally located beneath said upper conductor and wherein said upper conductor includes aperture means thereat for the application of light energy to said switch.
- 7. The apparatus according to claim 6 and additionally including means for electrically connecting said antenna means to said semiconductor switch.
- 8. The apparatus according to claim 7 wherein said means for connecting comprises a region of metallization passing through said dielectric member to said semiconductor switch.
- 9. The apparatus according to claim 8 wherein said photoconductive semiconductor switch comprises a bulk semiconductor switch device embedded in said dielectric medium.
- 10. The apparatus according to claim 9 wherein said semiconductor switch device is comprised of GaAs.
- 11. The apparatus according to claim 9 wherein said upper conductor comprises a generally continuous layer of metallization.
- 12. The apparatus according to claim 11 wherein said continuous layer of metallization comprises a circular pattern of metallization.
- 13. The pulse signal generator according to claim 12 wherein said circular pattern of metallization includes a set of light apertures at the center for the application of energizing light to said semiconductor switch device.
- 14. The pulse signal generator according to claim 13 wherein said antenna means comprises a pattern of metallization including a plurality of stripline segments.
- 15. The pulse signal generator according to claim 14 wherein said plurality of stripline segments comprise a set of linear stripline segments.
- 16. The apparatus according to claim 15 wherein said set of linear stripline segments are commonly connected to said region of metallization passing through said dielectric member to said semiconductor switch.
- 17. The apparatus according to claim 16 wherein said stripline segments are mutually parallel.
GOVERNMENT INTEREST
The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to me or us of any royalty thereon or therefor.
US Referenced Citations (5)