1. Technical Field
This application claims the priority of Japanese Patent Application No. 2009-140194 filed in Japan on Jun. 11, 2009, the contents of which are hereby incorporated by reference.
The present invention relates to an organic electroluminescent element and a method for manufacturing the same.
2. Background Art
Conventional organic electroluminescent elements include a top-emission type element for extracting light from a top-side negative electrode, as shown in Japanese Patent Laid-Open Publication No. 2005-44799 (Patent Document 1).
In
However, the conventional structure described above has a problem of inability to achieve a sufficiently high luminous efficiency, when the specific resistance of a transparent electrode such as ITO, used for the negative electrode, is excessively low. When the specific resistance of the deposited film is excessively low in the deposition of the negative electrode, deposition damage to the organic light-emitting layer 103 is produced to cause a decrease in luminous efficiency.
An object of the present invention is to provide, mainly in view of the negative electrode structure of a top-emission type organic electroluminescent element, an organic electroluminescent element which achieves a high luminous efficiency, and a method for manufacturing the same.
An organic electroluminescent element according to the present invention includes: a substrate; and a positive electrode, an organic light-emitting layer, and a laminated negative electrode of two or more layers including a lower negative electrode and an upper negative electrode having different specific resistances from each other, the positive electrode, organic light-emitting layer, and laminated negative electrode sequentially provided on the substrate from the substrate side, wherein the lower negative electrode and of the upper negative electrode include any one of ITO, IZO, GZO, and AZO as a main constituent, and the lower negative electrode is provided closer to the organic light-emitting layer than the upper negative electrode, and the lower negative electrode has a specific resistance higher than the specific resistance of the upper negative electrode adjacent to the lower negative electrode.
This configuration can achieve a high luminous efficiency without adding a new material layer to a material layer of transparent conductive film such as ITO, mainly in terms of the negative electrode structure of a top-emission type organic electroluminescent element.
As described above, the organic electroluminescent element according to the present invention can achieve a high luminous efficiency without adding a new material layer to a material layer of transparent conductive film such as ITO, mainly in terms of the negative electrode structure of a top-emission type organic electroluminescent element. Furthermore, the method for manufacturing an electroluminescent element according to the present invention can manufacture an organic electroluminescent element which has a high luminous efficiency, without preparing any other new material in addition to materials for use in a conventional element structure.
The present invention will become readily understood from the following description of preferred embodiments thereof made with reference to the accompanying drawings, in which like parts are designated by like reference numeral and in which:
Organic electroluminescent elements according to embodiments of the present invention will be described below with reference to the accompanying drawings. It is to be noted that substantially the same members are denoted by the same reference numerals in the drawings.
In
In this configuration, the laminated negative electrode (lower negative electrode) 206a having higher specific resistance causes no deposition damage to the organic light-emitting layer 103 during the deposition. Furthermore, during the deposition of the laminated negative electrode (upper negative electrode) 206b having lower specific resistance, the laminated negative electrode (lower negative electrode) 206a serves as a barrier layer against deposition damage to the organic light-emitting layer 103. As a result, even while improving the luminous efficiency, the laminated negative electrode (upper negative electrode) 206b having lower specific resistance suppresses the voltage drop in a horizontal direction, thereby making it possible to keep the driving voltage low.
As described above, according to this configuration, the laminated negative electrode (lower negative electrode) 206a composed of an ITO film is stacked on the laminated negative electrode (upper negative electrode) 206b composed of another ITO film which is different only in resistance value, thereby allowing the driving voltage to be kept low due to the lower specific resistance of the laminated negative electrode (upper negative electrode) 206b, even while improving the luminous efficiency.
A method for manufacturing the organic electroluminescent element shown in
a) The positive electrode 102 is obtained through deposition of a metal having a high reflectivity by a method such as sputtering. The metal having a high reflectivity can be selected from metals such as aluminum, molybdenum, and silver, and alloys thereof. The positive electrode 102 is subjected, after the deposition, to patterning by methods such as lithography and etching.
b) Next, the organic light-emitting layer 103 is typically composed of a hole transporting layer, a hole injecting layer, a light-emitting layer, etc. Deposition method for the respective layers constituting the organic light-emitting layer 103 may be selected from vapor deposition, spin coating, ink jet and the like. These deposition method is selected depending on the types, etc. of the layers constituting the organic light-emitting layer 103. In any of these methods, patterning is required, and in many cases, etching or the like is not carried out.
c) Further, alkaline-earth metals and salts thereof, and mixtures of alkaline-earth metals with organic matters can be used for the electron injecting layer 104. In addition, the electron injecting layer 104 can be deposited by a vapor deposition method.
d) A transparent conductive film or a semi-transparent conductive film is used for the laminated negative electrode (lower negative electrode) 206a and the laminated negative electrode (upper negative electrode) 206b in the case of a top-emission type element. As the material, a conductive oxide is used such as ITO, IZO, AZO, or GZO. The deposition method can include sputtering, ion plating, vapor deposition and the like. Furthermore, for example, depositing the laminated negative electrode (lower negative electrode) 206a and the laminated negative electrode (upper negative electrode) 206b by varying the composition between the laminated negative electrode (lower negative electrode) 206a and the laminated negative electrode (upper negative electrode) 206b each other, such that the laminated negative electrode (lower negative electrode) 206a and the laminated negative electrode (upper negative electrode) 206b have different specific resistances from each other. Alternatively, the inclusion of an additive for changing specific resistance can make the respective specific resistances of the laminated negative electrode (lower negative electrode) 206a and the laminated negative electrode (upper negative electrode) 206b which are different from each other. In addition, the specific resistances can be changed by changing the deposition conditions. For example, the oxygen flow rate changed during deposition as described later can change the content of oxygen contained in each laminated negative electrode, and thus change the specific resistances.
e) Furthermore, the organic light-emitting layer 103 and the electron injecting layer 104 are often unstable to oxygen and water in the atmosphere. Therefore, can sealing may be carried out in such a way that the organic electroluminescent element is covered with glass and subjected to sealing with a resin, or film sealing may be carried out in such a way that the organic electroluminescent element is coated with a passivation film such as SiN, SiON, or SiO2. Thus, the ingress of oxygen and water from the atmosphere can be prevented to prevent the organic electroluminescent element from being deteriorated.
Next, the advantageous effects of the first embodiment will be described with reference to
It is to be noted that the PL quantum efficiency (which may be referred to as “PL luminous efficiency”) refers to the ratio of emitted light energy to injected light energy.
In order not to increase the driving voltage significantly, the thickness of the laminated negative electrode (lower negative electrode) 206a is adjusted in the range of 100 nm to 1 nm with respect to the preferable specific resistance 1×10−3 to 1×10−1 Ω·cm mentioned above, thereby allowing the resistance value in the thickness direction to be kept constant. In this case, when the thickness is excessively thinner than 1 nm, there is a possibility that the in-plane uniformity in deposition may be degraded excessively. Thus, it is considered necessary that the thickness is 1 nm or more.
While the specific resistance of the laminated negative electrode (upper negative electrode) 206b is preferably small as much as possible, the specific resistance of ITO as the most frequently used transparent conductive film has a limit on the order of 1×10−4 Ω·cm. Furthermore, in order to perform a conductive function in the in-plane direction of the film as a negative electrode, the sheet resistance measured for the laminated negative electrode (upper negative electrode) 206b itself desirably meets 100 Ω/□ or less.
It is to be noted that while the case of two layers has been described as the laminated negative electrode in this the first embodiment, multiple layers of three or more layers may be adopted. For example, as long as, among the three or more layers, the laminated negative layer closest to the organic light-emitting layer has specific resistance higher than the specific resistance of the second closest layer, it is believed that at least the effect of improvement in luminous efficiency is produced.
In addition, while the case of using ITO as the negative electrode material has been described in this first embodiment, the negative electrode material is not limited to ITO. The specific resistance is important for producing the effect of improvement in luminous efficiency, it is thus believed that similar effects are also produced in the case of IZO, GZO, AZO, etc. in addition to ITO, as the negative electrode material.
In addition, while the typical structure has been described as the structure of the organic electroluminescent element in this first embodiment, it is obvious that a similar effect is produced as long as a transparent conductive film is mainly used as the negative electrode in the structure, and for example, a structure including no electron injecting layer may be adopted, or a conductive protective layer (barrier layer) may be located on the electron injecting layer.
Methods for manufacturing the negative electrode in the organic electroluminescent element according to this second embodiment include sputtering deposition of ITO. In this case, the oxygen flow rate can be increased to form an ITO film having higher specific resistance in the initial stage of the deposition, and the oxygen flow rate can be decreased gradually to form an ITO film having lower specific resistance on the upper side. In this regard, for how to vary the specific resistance, it is not always necessary to vary the relationship between the depth and the specific resistance in a linear manner over all of the region. For example, the specific resistance is preferably decreased as much as possible in the region other than the region for improving the luminous efficiency, because the driving voltage is not increased.
In addition, it is considered preferable from the result in
While the case of using an ITO film as the negative electrode material has been also described as an example in this second embodiment, it comes near to stating the obvious that similar effects are also produced in the case of using other conductive materials for transparent oxide films, such as IZO, AZO, and GZO, as the negative electrode material.
In addition, on the subject of the present invention, while the typical structures have been described as the structure of the organic electroluminescent element in each of the embodiments, it is obvious that a similar effect is produced as long as a transparent conductive film is mainly used as the negative electrode in the structure. For example, a structure including no electron injecting layer may be adopted, or a conductive protective layer (barrier layer) may be provided on the electron injecting layer.
The organic electroluminescent element according to the present invention is a top-emission type element which has a high luminous efficiency and a low driving voltage while using a transparent conductive film such as ITO. Therefore, the present invention can be applied to uses of two-sided light extraction structures such as organic electroluminescent elements.
Number | Date | Country | Kind |
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2009-140194 | Jun 2009 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP10/03861 | 6/10/2010 | WO | 00 | 12/9/2011 |