Organic layer deposition apparatus

Information

  • Patent Grant
  • 8852687
  • Patent Number
    8,852,687
  • Date Filed
    Thursday, August 4, 2011
    13 years ago
  • Date Issued
    Tuesday, October 7, 2014
    10 years ago
Abstract
An organic layer deposition apparatus for forming an organic layer while a substrate is being moved, in which an interval between the substrate and the organic layer deposition apparatus can be measured at a vacuum condition.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims priority to and the benefit of Korean Patent Application No. 10-2010-0127090, filed on Dec. 13, 2010, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.


BACKGROUND

1. Field


An aspect of embodiments according to the present invention relates to an organic layer deposition apparatus.


2. Description of the Related Art


Organic light-emitting display devices have a larger viewing angle, better contrast characteristics, and a faster response speed in comparison to other display devices; therefore, the organic light-emitting display devices have drawn attention as a next-generation display device.


SUMMARY

In order to solve the problems of the contemporary deposition method using a fine metal mask (FMM), one or more aspects of embodiments according to the present invention provide an organic layer deposition apparatus that may be applied to simplify the production of large-sized display devices on a mass scale and that may be suitable for high-definition patterning.


According to an aspect of embodiments according to the present invention, there is provided an organic layer deposition apparatus for forming an organic layer on a substrate within a vacuum chamber, the apparatus including: a deposition source configured to discharge a deposition material; a deposition source nozzle unit located at a side of the deposition source, the deposition source nozzle unit including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet located opposite to the deposition source nozzle unit, patterning slit sheet having a plurality of patterning slits arranged in a second direction perpendicular to the first direction; and an interval measuring unit configured to measure an interval between the substrate and the patterning slit sheet, wherein the organic layer deposition apparatus is configured to perform deposition while the substrate or the organic layer deposition apparatus is moved relative to the other in the first direction at a distance from the other, and the interval measuring unit is in the vacuum chamber and is configured to measure an interval between the substrate moving in the first direction and the patterning slit sheet.


The deposition source, the deposition source nozzle unit, and the patterning slit sheet may be integrally formed as a single body.


The deposition source and the deposition source nozzle unit, and the patterning slit sheet may be integrally connected as a single body by a connection member for guiding movement of the deposition material.


The connection member may seal a space between the deposition source nozzle unit located at the side of the deposition source, and the patterning slit sheet.


The plurality of deposition source nozzles may be tilted at an angle with respect to a vertical line of a surface from which the deposition source nozzle is extruded.


The plurality of deposition source nozzles may include deposition source nozzles arranged in two rows formed in the first direction, and the deposition source nozzles in one of the two rows may be tilted to face towards the deposition source nozzles in the other one of the two rows.


The plurality of deposition source nozzles may include deposition source nozzles arranged in two rows formed in the first direction, the deposition source nozzles of one of the two rows located at a first side of the patterning slit sheet may be arranged to face towards a second side of the patterning slit sheet, and the deposition source nozzles of the other one of the two rows located at the second side of the patterning slit sheet may be arranged to face towards the first side of the patterning slit sheet.


The interval measuring unit may measure the interval between the substrate and the patterning slit sheet in a vacuum condition.


The interval measuring unit may be located above the substrate, and a sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate.


The interval measuring unit may sense the sensing pattern from the moving substrate and then may sense one surface of the patterning slit sheet to measure the interval between the substrate and the patterning slit sheet.


The sensing pattern may be formed of metal.


The interval measuring unit may be located below the patterning slit sheet, the sensing pattern to be sensed by the interval measuring unit may be located on one surface of the substrate, and the patterning slit sheet may have a through hole, and a sensing target configured to cover the through hole.


The sensing target and the sensing pattern may be formed of metal.


The interval measuring unit may sense the sensing target and then may sense the sensing pattern from the moving substrate through the through hole from which the sensing target has been removed, to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be a capacitive sensor or an Eddy-current sensor.


The interval measuring unit may be located above the substrate and may sense one surface of the substrate and one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be located below the patterning slit sheet, and the patterning slit sheet may have a through hole.


The interval measuring unit may sense one surface of the patterning slit sheet and may sense one surface of the substrate through the through hole so as to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be a confocal sensor.


According to another aspect of the present invention, there is provided an organic layer deposition apparatus for forming an organic layer on a substrate within a vacuum chamber, the apparatus including: a deposition source configured to discharge a deposition material; a deposition source nozzle unit located at a side of the deposition source, the deposition source nozzle unit including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet located opposite to the deposition source nozzle unit, the patterning slit sheet having a plurality of patterning slits arranged in the first direction; a barrier plate assembly comprising a plurality of barrier plates that are located between the deposition source nozzle unit and the patterning slit sheet in the first direction, and partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and an interval measuring unit configured to measure an interval between the substrate and the patterning slit sheet. The organic layer deposition apparatus and the substrate are separated from each other, the organic layer deposition apparatus or the substrate is configured to be moved relative to the other, and the interval measuring unit is located within the vacuum chamber and is configured to measure an interval between the substrate and the patterning slit sheet that are moved relative to each other.


The plurality of barrier plates may extend in a second direction substantially perpendicular to the first direction.


The barrier plate assembly may include a first barrier plate assembly including a plurality of first barrier plates, and a second barrier plate assembly including a plurality of second barrier plates.


Each of the first barrier plates and each of the second barrier plates may extend in a second direction substantially perpendicular to the first direction.


The first barrier plates may be arranged to respectively correspond to the second barrier plates.


The deposition source and the barrier plate assembly may be separated from each other.


The barrier plate assembly and the patterning slit sheet may be separated from each other.


The interval measuring unit may measure the interval between the substrate and the patterning slit sheet in a vacuum condition.


The interval measuring unit may be located above the substrate, and a sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate.


The interval measuring unit may sense the sensing pattern from the moving substrate and then may sense one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.


The sensing pattern may be formed of metal.


The interval measuring unit may be located below the patterning slit sheet, the sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate, and the patterning slit sheet may have a through hole, and a sensing target configured to cover the through hole.


The sensing target and the sensing pattern may be formed of metal.


The interval measuring unit may sense the sensing target and then may sense the sensing pattern from the moving substrate through the through hole from which the sensing target has been removed, to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be a capacitive sensor or an Eddy-current sensor.


The interval measuring unit may be located above the substrate and may sense one surface of the substrate and one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be located below the patterning slit sheet, and the patterning slit sheet may have a through hole.


The interval measuring unit may sense one surface of the patterning slit sheet and may sense one surface of the substrate through the through hole so as to measure the interval between the substrate and the patterning slit sheet.


The interval measuring unit may be a confocal sensor.





BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and aspects of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:



FIG. 1 is a schematic view of a thin film deposition system including an organic layer deposition apparatus according to an embodiment of the present invention;



FIG. 2 illustrates a modified example of the thin film deposition system of FIG. 1;



FIG. 3 is a schematic perspective view of an organic layer deposition apparatus according to an embodiment of the present invention;



FIG. 4 is a schematic side view of the organic layer deposition apparatus of FIG. 3, according to an embodiment of the present invention;



FIG. 5 is a schematic sectional view in an XZ plane of the organic layer deposition apparatus of FIG. 3, according to an embodiment of the present invention;



FIGS. 6 and 7 are schematic views for illustrating a process for measuring an interval between a substrate and a patterning slit sheet by using an interval measuring unit included in the organic layer deposition apparatus of FIG. 3;



FIG. 8 is a schematic perspective view of an organic layer deposition apparatus according to another embodiment of the present invention;



FIGS. 9 and 10 are schematic views for illustrating a process for measuring an interval between a substrate and a patterning slit sheet by using an interval measuring unit included in the organic layer deposition apparatus of FIG. 8;



FIG. 11 is a schematic view for illustrating a process for measuring an interval between a substrate and a patterning slit sheet by using an interval measuring unit according to another embodiment of the present invention;



FIGS. 12 and 13 are schematic views for illustrating a process for measuring an interval between a substrate and a patterning slit sheet by using an interval measuring unit according to another embodiment of the present invention;



FIG. 14 is a schematic perspective view of an organic layer deposition apparatus according to another embodiment of the present invention;



FIG. 15 is a schematic perspective cutaway view of an organic layer deposition apparatus according to another embodiment of the present invention;



FIG. 16 is a schematic side cross-sectional view of the organic layer deposition apparatus of FIG. 14, according to an embodiment of the present invention;



FIG. 17 is a schematic plan sectional view in an XZ plane of the organic layer deposition apparatus of FIG. 14, according to an embodiment of the present invention;



FIG. 18 is a schematic perspective cutaway view of an organic layer deposition apparatus according to another embodiment of the present invention; and



FIG. 19 is a cross-sectional view of an organic light-emitting display device manufactured by using an organic layer deposition apparatus, according to an embodiment of the present invention.





DETAILED DESCRIPTION

One or more aspects of embodiments according to the present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.


An organic light-emitting display device includes intermediate layers, including an emission layer disposed between a first electrode and a second electrode that are arranged opposite to each other. The electrodes and the intermediate layers may be formed via various methods, one of which is a deposition method. When an organic light-emitting display device is manufactured by using the deposition method, a fine metal mask (FMM) having the same pattern as a thin film to be formed is disposed to closely contact a substrate, and a thin film material is deposited over the FMM in order to form the thin film having the desired pattern.


However, the deposition method using such a FMM is generally not suitable for manufacturing larger devices using a mother glass having a size of 5G (1100×1300 mm) or greater. In other words, when such a large mask is used, the mask may bend due to its own weight, thereby distorting a pattern. This is not conducive for the recent trend towards high-definition patterns.



FIG. 1 is a schematic view of a thin film deposition system including an organic layer deposition apparatus according to an embodiment of the present invention, and FIG. 2 illustrates a modified example of the thin film deposition system of FIG. 1.


Referring to FIG. 1, the thin film deposition apparatus according to the current embodiment includes a loading unit 710, a deposition unit 730, an unloading unit 720, a first conveyer unit 610 and a second conveyer unit 620.


The loading unit 710 includes a first rack 712, a transport robot 714, a transport chamber 716, and a first inversion chamber 718.


A plurality of substrates 500 onto which a deposition material is not applied are stacked up on the first rack 712. The transport robot 714 picks up one of the substrates 500 from the first rack 712, places it on the electrostatic chuck 600 transferred by the second conveyor unit 620, and moves the electrostatic chuck 600 on which the substrate 500 is placed into the transport chamber 716.


The first inversion chamber 718 is located adjacent to the transport chamber 716. The first inversion chamber 718 includes a first inversion robot 719 that inverts the electrostatic chuck 600 and then loads it onto the first conveyer unit 610 of the deposition unit 730.


Referring to FIG. 1, the transport robot 714 places one of the substrates 500 on the surface of the electrostatic chuck 600, and the electrostatic chuck 600 on which the substrate 500 is placed is loaded into the transport chamber 716. The first inversion robot 719 inverts the electrostatic chuck 600 so that the substrate 500 is turned upside down in the deposition unit 730.


The unloading unit 720 is constituted to operate in an opposite manner to the loading unit 710 described above. Specifically, a second inversion robot 729 in a second inversion chamber 728 inverts the electrostatic chuck 600, which has passed through the deposition unit 730 while the substrate 500 is placed on the electrostatic chuck 600, and then moves the electrostatic chuck 600 on which the substrate 500 is placed into an ejection chamber 726. Then, an ejection robot 724 removes the electrostatic chuck 600 on which the substrate 500 is placed from the ejection chamber 726, separates the substrate 500 from the electrostatic chuck 600, and then loads the substrate 500 onto the second rack 722. The electrostatic chuck 600 separated from the substrate 500 is returned back into the loading unit 710 via the second conveyer unit 620.


However, the present invention is not limited to the above description. For example, when placing the substrate 500 on the electrostatic chuck 600, the substrate 500 may be fixed onto a bottom surface of the electrostatic chuck 600 and then moved into the deposition unit 730. In this case, for example, the first inversion chamber 718 and the first inversion robot 719, and the second inversion chamber 728 and the second inversion robot 729 are not used.


The deposition unit 730 may include at least one deposition chamber. As illustrated in FIG. 1, the deposition unit 730 may include a first chamber 731. In the embodiment illustrated in FIG. 1, first to fourth organic layer deposition apparatuses 100, 200, 300, and 400 are located in the first chamber 731. Although FIG. 1 illustrates that a total of four organic layer deposition apparatuses, i.e., the first through fourth organic layer deposition assemblies 100 through 400, are located in the first chamber 731, the total number of organic layer deposition apparatuses that may be installed in the first chamber 731 may vary according to a deposition material and deposition conditions. The first chamber 731 may be maintained in a vacuum state during a deposition process.


In the organic layer deposition apparatus illustrated in FIG. 2, a deposition unit 730 includes a first chamber 731 and a second chamber 732 that are connected to each other. In the embodiment illustrated in FIG. 2, first and second organic layer deposition apparatuses 100 and 200 are located in the first chamber 731, and third and fourth organic layer deposition apparatuses 300 and 400 are located in the second chamber 732. In other embodiments, the thin film deposition system may include more than two chambers.


In the embodiment illustrated in FIG. 1, the electrostatic chuck 600 on which the substrate 500 is placed may be moved at least to the deposition unit 730 or may be moved sequentially to the loading unit 710, the deposition unit 730, and the unloading unit 720, by the first conveyor unit 610. The electrostatic chuck 600 that is separated from the substrate 500 in the unloading unit 720 is moved back to the loading unit 710 by the second conveyor unit 620.



FIG. 3 is a schematic perspective view of an organic layer deposition apparatus 100 according to an embodiment of the present invention, FIG. 4 is a schematic sectional view of the organic layer deposition apparatus 100 illustrated in FIG. 3, and FIG. 5 is a schematic sectional view in an XZ plane of the organic layer deposition apparatus 100 illustrated in FIG. 3.


Referring to FIGS. 3 through 5, the organic layer deposition apparatus 100 according to the current embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120, a patterning slit sheet 150, and an interval measuring unit 161.


For example, in order to deposit a deposition material 115 that is emitted from the deposition source 110 and is discharged through the deposition source nozzle unit 120 and the patterning slit sheet 150, onto a substrate 500 in a desired pattern, the chamber should be maintained in a high-vacuum state as in a deposition method using a fine metal mask (FMM). In addition, the temperature of the patterning slit sheet 150 should be sufficiently lower than the temperature of the deposition source 110. In this regard, the temperature of the patterning slit sheet 150 may be about 100° C. or less. The temperature of the patterning slit sheet 150 should be sufficiently low so as to reduce thermal expansion of the patterning slit sheet 150.


The substrate 500, which constitutes a deposition target on which the deposition material 115 is to be deposited, is located in the first chamber 731. The substrate 500 may be a substrate for flat panel displays. A large substrate, such as a mother glass, for manufacturing a plurality of flat panel displays, may be used as the substrate 500. Other substrates may also be employed.


In the current embodiment of the present invention, deposition may be performed while the substrate 500 or the organic layer deposition apparatus 100 is moved relative to the other.


In particular, in a typical FMM deposition method, the size of the FMM is generally equal to the size of a substrate. Thus, the size of the FMM is increased as the substrate becomes larger. However, it is neither straightforward to manufacture a large FMM nor to extend an FMM to be accurately aligned with a pattern.


In order to solve this problem, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, deposition may be performed while the organic layer deposition apparatus 100 or the substrate 500 is moved relative to the other. In other words, deposition may be continuously performed while the substrate 500, which is disposed such as to face the organic layer deposition apparatus 100, is moved in a Y-axis direction. In other words, deposition may be performed in a scanning manner while the substrate 500 is moved in a direction of arrow A in FIG. 6 (first direction).


In the organic layer deposition apparatus 100 according to the current embodiment of the present invention, the patterning slit sheet 150 may be significantly smaller than a FMM used in a conventional deposition method. In other words, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, deposition is continuously performed, i.e., in a scanning manner while the substrate 500 is moved in the Y-axis direction. Thus, lengths of the patterning slit sheet 150 in the X-axis and Y-axis directions may be less (e.g., significantly less) than the lengths of the substrate 500 in the X-axis and Y-axis directions. As described above, since the patterning slit sheet 150 may be formed to be smaller (e.g., significantly smaller) than a FMM used in a conventional deposition method, it is relatively easy to manufacture the patterning slit sheet 150 used in embodiments of the present invention. In other words, using the patterning slit sheet 150, which is smaller than a FMM used in a conventional deposition method, is more convenient in all processes, including etching and other subsequent processes, such as precise extension, welding, moving, and cleaning processes, compared to the conventional deposition method using the larger FMM. This is more advantageous for a relatively large display device.


The deposition source 110 that contains and heats the deposition material 115 is located at an opposite side of the chamber to a side at which the substrate 500 is located. While being vaporized in the deposition source 110, the deposition material 115 is deposited on the substrate 500.


For example, the deposition source 110 includes a crucible 112 that is filled with the deposition material 115, and a cooling block 111 that heats the crucible 112 to vaporize the deposition material 115, which is contained in the crucible 112, towards a side of the crucible 112, and in particular, towards the deposition source nozzle unit 120. The cooling block 111 prevents radiation of heat from the crucible 112 outside, i.e., into the first chamber 731. The cooling block 111 may include a heater (not shown) that heats the crucible 111.


The deposition source nozzle unit 120 is located at a side of the deposition source 110, and in particular, at the side of the deposition source 110 facing the substrate 500. The deposition source nozzle unit 120 includes a plurality of deposition source nozzles 121 arranged at equal intervals in the Y-axis direction, i.e., a scanning direction of the substrate 500. The deposition material 115 that is vaporized in the deposition source 110, passes through the deposition source nozzle unit 120 toward the substrate 500. As described above, when the deposition source nozzle unit 120 includes the plurality of deposition source nozzles 121 arranged in the Y-axis direction, that is, the scanning direction of the substrate 500, the size of a pattern formed of the deposition material discharged through the patterning slits 151 of the patterning slit sheet 150 is affected by the size of one of the deposition source nozzles 121 (since there is only one line of deposition nozzles in the X-axis direction), and thus no shadow zone may be formed on the substrate 500. In addition, since the plurality of deposition source nozzles 121 are arranged in the scanning direction of the substrate 500, even if there is a difference in flux between the deposition source nozzles 121, the difference may be compensated for and deposition uniformity may be maintained constant.


The patterning slit sheet 150 and a frame 155 in which the patterning slit sheet 150 is bound are located between the deposition source 110 and the substrate 500. The frame 155 may be formed in a lattice shape, similar to a window frame. The patterning slit sheet 150 is bound inside the frame 155. The patterning slit sheet 150 has a plurality of patterning slits 151 arranged in the X-axis direction. The deposition material 115 that is vaporized in the deposition source 110, passes through the deposition source nozzle unit 120 and the patterning slit sheet 150 toward the substrate 500. The patterning slit sheet 150 may be manufactured by etching, which is the same method as used in a typical method of manufacturing an FMM, and in particular, a striped FMM. In this regard, the total number of patterning slits 151 may be greater than the total number of deposition source nozzles 121.


In addition, the deposition source 110 and the deposition source nozzle unit 120 coupled to the deposition source 110 may be arranged to be separated from the patterning slit sheet 150 by a distance (e.g., a predetermined distance). Alternatively, the deposition source 110 and the deposition source nozzle unit 120 coupled to the deposition source 110 may be connected to the patterning slit sheet 150 by a connection member 135. That is, the deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 may be integrally formed as one body by being connected to each other via the first connection member 135. The first connection member 135 guides the deposition material 115, which is discharged through the deposition source nozzles 121, to move straight, not to flow in the X-axis direction. In FIGS. 3, 4, and 5, the connection members 135 are formed on left and right sides of the deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 to guide the deposition material 115 not to flow in the X-axis direction; however, aspects of the present invention are not limited thereto. That is, the connection member 135 may be formed as a sealed box to guide flow of the deposition material 115 both in the X-axis and Y-axis directions.


As described above, the organic layer deposition apparatus 100 according to the current embodiment of the present invention performs deposition while being moved relative to the substrate 500. In order to move the organic layer deposition apparatus 100 relative to the substrate 500, the patterning slit sheet 150 is separated from the substrate 500 by a distance (e.g., a predetermined distance).


In particular, in a typical deposition method using a FMM, deposition is performed with the FMM in close contact with a substrate in order to prevent formation of a shadow zone on the substrate. However, when the FMM is used in close contact with the substrate, the contact may cause defects. In addition, in the conventional deposition method, the size of the mask is the same as the size of the substrate since the mask cannot be moved relative to the substrate. Thus, the size of the mask is increased as display devices become larger. However, it is not easy to manufacture such a large mask.


In order to overcome this problem, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, the patterning slit sheet 150 is arranged to be separated from the substrate 500 by a distance (e.g., a predetermined distance).


As described above, according to embodiments of the present invention, a mask is formed to be smaller than a substrate, and deposition is performed while the mask is moved relative to the substrate. Thus, the mask can be easily manufactured. In addition, defects caused due to the contact between a substrate and a FMM, which may occur in the conventional deposition method, may be prevented. Furthermore, since it is unnecessary to arrange the FMM in close contact with the substrate during a deposition process, the manufacturing time may be reduced.


The interval measuring unit 161 measures an interval between the substrate 50 and the patterning slit sheet 150. In more detail, while the substrate 500 is moving in the first direction (Y-axis direction) at a distance (e.g., a predetermined distance) from the patterning slit sheet 150, an organic layer is formed on the substrate 500. The interval measuring unit 161 may measure the interval between the substrate 500 and the patterning slit sheet 150 while the substrate 500 is moving. In particular, the interval measuring unit 161 may be located within the first chamber 731 of FIG. 1 or 2, which is in a vacuum condition, and measure the interval between the substrate 500 and the patterning slit sheet 150.


The interval measuring unit 161 may achieve more accurate measurement since the interval measuring unit 161 can measure the interval between the substrate 500 and the patterning slit sheet 150 within the first chamber 731, which is in a vacuum condition. The interval measuring unit 161 may also increase deposition uniformity since the interval measuring unit 161 may measure in real time the interval (or gap) between the substrate 500 that is moving during a deposition process, and the patterning slit sheet 150. While not shown specifically in FIGS. 3-5, the organic layer deposition apparatus 100 may include a controller for adjusting (e.g., dynamically adjusting) the interval (or distance) between the substrate 500 and the patterning slit sheet 150 based on the measurement taken by the interval measuring unit 161, such that the distance between the substrate 500 and the patterning slit sheet 150 is maintained constantly based on the measurement. The design and application of such a controller is known to those with ordinary skill in the art and will not be discussed in detail herein.



FIGS. 6 and 7 are schematic views for illustrating a process for measuring an interval between the substrate 500 and the patterning slit sheet 150 by using the interval measuring unit 161 of FIG. 3. In detail, FIG. 6 illustrates measurement of a distance between the interval measuring unit 161 and the substrate 500 by using the interval measuring unit 161, and FIG. 7 illustrates measurement of a distance between the interval measuring unit 161 and the patterning slit sheet 150 by using the interval measuring unit 161.


Referring to FIGS. 6 and 7, the interval measuring unit 161 is located within the first chamber 731 of FIG. 1 and is located over the substrate 500. The interval measuring unit 161 first detects a sensing pattern 502 located on the bottom surface of the substrate 500 to measure a distance t1 from the interval measuring unit 161 to the substrate 500. Thereafter, the substrate 500 on which the sensing pattern 502 is located moves (e.g., in the A direction), and, as illustrated in FIG. 7, the interval measuring unit 161 measures a distance t2 from the interval measuring unit 161 to the patterning slit sheet 150. The interval measuring unit 161 measures (or determines) an interval t3 between the substrate 500 and the patterning slit sheet 150 by using the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150 and the distance t1 from the interval measuring unit 161 to the substrate 500. The interval measuring unit 161 may include a capacitive sensor or an Eddy-current sensor that are capable of measuring a distance to the substrate 500 (or the patterning slit sheet 150) in a vacuum condition.


The capacitive sensor may sense flow of free electrons, which constitute a measurement target, to measure a distance to the measurement target. The sensing pattern 502 may be formed of metal. Accordingly, when the capacitive sensor is used as the interval measuring unit 161, the capacitive sensor may measure the distance t1 from the interval measuring unit 161 to the substrate 500 by sensing the sensing pattern 502, and may measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150 by sensing the patterning slit sheet 150, which is formed of metal.


The Eddy-current sensor may sense an Eddy current on a surface of the measurement target to measure a distance to the measurement target. Accordingly, when the Eddy current sensor is used as the interval measuring unit 161, the Eddy current sensor may measure the distance t1 from the interval measuring unit 161 to the substrate 500 by sensing the sensing pattern 502, and may measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150 by sensing the patterning slit sheet 150, which is formed of metal.



FIG. 8 is a schematic perspective view of an organic layer deposition apparatus 100′ according to another embodiment of the present invention. FIGS. 9 and 10 are schematic views for illustrating a process for measuring the interval between the substrate 500 and the patterning slit sheet 150′ by using an interval measuring unit 161 illustrated in FIG. 8.


The organic layer deposition apparatus 100′ of FIG. 8 is different from the organic layer deposition apparatus 100 of FIG. 3 in terms of a location of the interval measuring unit 161. In other words, the organic layer deposition apparatus 100 of FIG. 3 includes the interval measuring unit 161 located over the substrate 500, whereas the organic layer deposition apparatus 100′ of FIG. 8 includes the interval measuring unit 161 located below the patterning slit sheet 150′.


The components of the organic layer deposition apparatus 100′ of FIG. 8 other than the interval measuring unit 161 are substantially the same as those of the organic layer deposition apparatus 100 of FIG. 3, so a detailed description thereof will not be provided herein.


Referring to FIG. 8, the interval measuring unit 161 is separated from the bottom surface of the patterning slit sheet 150′ and is located within the first chamber 731. The interval measuring unit 161 measures a distance from the interval measuring unit 161 below the patterning slit sheet 150′ to the patterning slit sheet 150′ and a distance from the interval measuring unit 161 below the patterning slit sheet 150′ to the substrate 500, thereby obtaining a distance between the patterning slit sheet 150′ and the substrate 500.


In more detail, referring to FIGS. 9 and 10, the interval measuring unit 161 is fixed within the first chamber 731 of FIG. 1 and is located below the patterning slit sheet 150′. The patterning slit sheet 150′ may include a through hole 152 facing the interval measuring unit 161, and a sensing target 153 capable of covering the through hole 152. The interval measuring unit 161 first senses the sensing target 153 from below the patterning slit sheet 150′, thereby measuring a distance t2 from the interval measuring unit 161 to the sensing target 153. Thereafter, as illustrated in FIG. 10, the sensing target 153 is removed, and the interval measuring unit 161 senses the sensing pattern 502 through the through hole 152 to measure the distance t1 from the interval measuring unit 161 to the substrate 500. The interval measuring unit 161 measures (or determines) an interval t3 between the substrate 500 and the patterning slit sheet 150′ by using the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150′ and the distance t1 from the interval measuring unit 161 to the substrate 500. The interval measuring unit 161 may be a capacitive sensor or an Eddy-current sensor that are able to measure a distance to the substrate 500 (or the patterning slit sheet 150′) in a vacuum condition.


The sensing target 153 and the sensing pattern 502 may be all formed of metal. Accordingly, the capacitive sensor or the Eddy-current sensor may sense the sensing target 153 or the sensing pattern 502 so as to measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150′ or the distance t1 from the interval measuring unit 161 to the substrate 500.



FIG. 11 is a schematic view for illustrating a process for measuring an interval between the substrate 500 and a patterning slit sheet 152 by using an interval measuring unit 161″ according to another embodiment of the present invention.


The interval measuring unit 161″ of FIG. 11 may be a confocal sensor. The confocal sensor may scan a measurement target with a laser beam by using a scanning mirror rotating at high speed, and measure a distance to the measurement target by using fluorescent or reflective rays emitted from the laser beam. The confocal sensor may sense an interface between different media to measure the distance to the measurement target.


Referring to FIG. 11, the interval measuring unit 161″, which is a confocal sensor, is disposed within the first chamber 731 of FIG. 1, which is a vacuum chamber, and is located on the substrate 500. The interval measuring unit 161″, which is a confocal sensor, may obtain a distance t1 from the interval measuring unit 161″ to the upper surface of the substrate 500 by sensing an interface between the upper surface of the substrate 500 and a space on the upper surface of the substrate 500 and may obtain a distance t2 from the interval measuring unit 161″ to the lower surface of the substrate 500 by sensing an interface between the lower surface of the substrate 500 and a space on the lower surface of the substrate 500. The interval measuring unit 161″ may measure a distance from the interval measuring unit 161″ to the upper surface of the patterning slit sheet 150 by sensing the upper surface of the patterning slit sheet 150. The interval measuring unit 161″ may obtain an interval t3 between the substrate 500 and the patterning slit sheet 150 by measuring the distance t2 from the interval measuring unit 161″ to the lower surface of the substrate 500 and the distance from the interval measuring unit 161″ to the upper surface of the patterning slit sheet 150.



FIGS. 12 and 13 are schematic views for illustrating a process for measuring an interval between the substrate 500 and the patterning slit sheet 150 by using an interval measuring unit 161′ according to another embodiment of the present invention. The interval measuring unit 161′ of FIGS. 12 and 13 is different from the interval measuring unit 161″ of FIG. 11 in that the interval measuring unit 161′ is located below the patterning slit sheet 150. The interval sensing unit 161′, for example, may include a confocal sensor or another suitable interval sensing device.


In other words, referring to FIGS. 12 and 13, the interval measuring unit 161′ measures a distance t2 from the interval measuring unit 161′ to the patterning slit sheet 150 from below the patterning slit sheet 150, before a deposition process starts. Thereafter, the patterning slit sheet 150 is moved so that the through hole 152 is located over the interval measuring unit 161′. Then, the interval measuring unit 161′ measures a distance t1 from the interval measuring unit 161′ to the substrate 500 via the through hole 152 of the patterning slit sheet 150. The interval measuring unit 161′ may obtain an interval t3 between the substrate 500 and the patterning slit sheet 150 by measuring the distance t2 from the interval measuring unit 161′ to the patterning slit sheet 150 and the distance t1 from the interval measuring unit 161′ to the substrate 500.



FIG. 14 is a schematic perspective view of an organic layer deposition apparatus according to another embodiment of the present invention. Referring to FIG. 14, the organic layer deposition apparatus according to the current embodiment of the present invention includes a plurality of organic layer deposition apparatuses, namely, first, second, and third organic layer deposition apparatuses 100, 200, and 300, each of which has the structure of the organic layer deposition apparatus 100 illustrated in FIGS. 3 through 5. In other words, the organic layer deposition apparatus according to the current embodiment of the present invention may include a multi-deposition source that concurrently (e.g., simultaneously) discharges deposition materials for forming an R emission layer, a G emission layer, and a B emission layer.


In particular, the organic layer deposition apparatus according to the current embodiment of the present invention includes the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300. Since each of the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300 has the same structure as the organic layer deposition apparatus described with reference to FIGS. 3 through 5, a detailed description thereof will not be provided herein.


The deposition sources 110 of the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200 and the third organic layer deposition apparatus 300 may contain different deposition materials, respectively. The first organic layer deposition apparatus 100 may contain a deposition material used to form the R emission layer, the second organic layer deposition apparatus 200 may contain a deposition material used to form the G emission layer, and the third organic layer deposition apparatus 300 may contain a deposition material used to form the B emission layer.


In other words, in a conventional method of manufacturing an organic light-emitting display device, a separate chamber and mask are used to form each color emission layer. However, when the organic layer deposition apparatus according to the current embodiment of the present invention is used, the R emission layer, the G emission layer and the B emission layer may be formed concurrently (e.g., at the same time) with a single multi-deposition source. Thus, the time it takes to manufacture the organic light-emitting display device may be reduced (e.g., sharply reduced). In addition, the organic light-emitting display device may be manufactured with a reduced number of chambers, so that equipment costs may be also reduced (e.g., markedly reduced).


Although not illustrated in detail, a patterning slit sheet of the first organic layer deposition apparatus 100, a patterning slit sheet of the second organic layer deposition apparatus 200, and a patterning slit sheet of the third organic layer deposition apparatus 300 may be arranged to be offset by a constant distance with respect to each other, in order for deposition regions corresponding to the patterning slit sheets not to overlap on the substrate 500. In other words, when the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300 are used to deposit the R emission layer, the G emission layer, and the B emission layer, respectively, patterning slits 151 of the first organic layer deposition apparatus 100, patterning slits 251 of the second organic layer deposition apparatus 200, and patterning slits 351 of the third organic layer deposition apparatus 300 are arranged not to be aligned with respect to each other, in order to form the R emission layer, the G emission layer and the B emission layer in different regions of the substrate 500.


In addition, the deposition materials used to form the R emission layer, the G emission layer, and the B emission layer may have different deposition temperatures. Therefore, the temperatures of the deposition sources of the respective first, second, and third organic layer deposition assemblies 100, 200, and 300 may be set to be different.


Although FIG. 14 illustrates the three organic layer deposition apparatuses 100, 200, and 300, the present invention is not limited thereto. In other words, an organic layer deposition apparatus according to another embodiment of the present invention may include a plurality of organic layer deposition apparatuses, each of which contains a different deposition material. For example, an organic layer deposition apparatus according to another embodiment of the present invention may include five organic layer deposition apparatuses respectively containing materials for a R emission layer, a G emission layer, a B emission layer, an auxiliary layer (R′) of the R emission layer, and an auxiliary layer (G′) of the G emission layer.


As described above, a plurality of thin films may be formed concurrently (e.g., at the same time) with a plurality of organic layer deposition apparatuses, and thus manufacturing yield and deposition efficiency may be improved. In addition, the overall manufacturing process may be simplified, and the manufacturing cost may be reduced.



FIG. 15 is a schematic perspective cutaway view of an organic layer deposition apparatus 100″ according to another embodiment of the present invention, FIG. 16 is a schematic side cross-sectional view of the organic layer deposition apparatus 100″, and FIG. 17 is a schematic sectional view in an XZ plane of the organic layer deposition apparatus 100″.


Referring to FIGS. 15 through 17, the organic layer deposition apparatus 100″ according to the current embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120′, a barrier plate assembly 130, and a patterning slit sheet 150 having a plurality of patterning slits 151.


Although a chamber is not illustrated in FIGS. 15 through 17 for convenience of explanation, all the components of the organic layer deposition apparatus 100″ may be located within a chamber that is maintained at an appropriate degree of vacuum. The chamber is maintained at an appropriate vacuum in order to allow a deposition material to move in a substantially straight line through the organic layer deposition apparatus 100″.


In the chamber 731 of FIG. 1 in which the organic layer deposition apparatus 100″ may be located, the substrate 500, which constitutes a deposition target on which the deposition material 115 is to be deposited, is transferred by the electrostatic chuck 600. The substrate 500 may be a substrate for flat panel displays. A large substrate, such as a mother glass, for manufacturing a plurality of flat panel displays, may be used as the substrate 500. Other substrates may also be employed.


In an embodiment, the substrate 500 or the organic layer deposition apparatus 100″ may be moved relative to the other. For example, as illustrated in FIG. 16, the substrate 500 may be moved in a direction of an arrow A, relative to the organic layer deposition apparatus 100″.


Similar to the embodiment described above with reference to FIGS. 3 through 5, in the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the patterning slit sheet 150 may be smaller (e.g., significantly smaller) than a FMM used in a conventional deposition method. In other words, in the organic layer deposition apparatus 100″, deposition is continuously performed, i.e., in a scanning manner while the substrate 500 is moved in the Y-axis direction. Thus, a length of the patterning slit sheet 150 in the Y-axis direction may be less (e.g., significantly less) than a length of the substrate 500 provided that a width of the patterning slit sheet 150 in the X-axis direction and a width of the substrate 500 in the X-axis direction are substantially equal to each other. However, even when the width of the patterning slit sheet 150 in the X-axis direction is less than the width of the substrate 500 in the X-axis direction, deposition may be performed on the entire substrate 500 in a scanning manner while the substrate 500 or the organic layer deposition apparatus 100″ is moved relative each other.


As described above, since the patterning slit sheet 150 may be formed to be smaller (e.g., significantly smaller) than a FMM used in a conventional deposition method, it is relatively easy to manufacture the patterning slit sheet 150 used in embodiments of the present invention. In other words, using the patterning slit sheet 150, which is smaller than a FMM used in a conventional deposition method, is more convenient in all processes, including etching and other subsequent processes, such as precise extension, welding, moving, and cleaning processes, compared to the conventional deposition method using the larger FMM. This is more advantageous for a relatively large display device.


The deposition source 110 that contains and heats the deposition material 115 is located at an opposite side of the first chamber to a side at which the substrate 500 is located.


The deposition source 110 includes a crucible 112 that is filled with the deposition material 115, and a cooling block 111 surrounding the crucible 112. The cooling block 111 prevents radiation of heat from the crucible 112 outside, e.g., into the first chamber. The cooling block 111 may include a heater (not shown) that heats the crucible 112.


The deposition source nozzle unit 120′ is located at a side of the deposition source 110, and in particular, at the side of the deposition source 110 facing the substrate 500. The deposition source nozzle unit 120′ includes a plurality of deposition source nozzles 121′ arranged at equal intervals in the X-axis direction. The deposition material 115 that is vaporized in the deposition source 110 passes through the deposition source nozzles 121′ of the deposition source nozzle unit 120′ toward the substrate 500, which constitutes a target on which the deposition material 115 is to be deposited.


The barrier plate assembly 130 is disposed at a side of the deposition source nozzle unit 120′. The barrier plate assembly 130 includes a plurality of barrier plates 131, and a barrier plate frame 132 that covers sides of the barrier plates 131. The plurality of barrier plates 131 may be arranged parallel to each other at equal intervals in the X-axis direction. In addition, each of the barrier plates 131 may be arranged parallel to an YZ plane in FIG. 15, and may have a rectangular shape. The plurality of barrier plates 131 arranged as described above partition the space between the deposition source nozzle unit 120′ and the patterning slit sheet 150 into a plurality of sub-deposition spaces S (for example, see FIG. 17). In the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, as illustrated in FIG. 17, the deposition space is divided by the barrier plates 131 into the sub-deposition spaces S that respectively correspond to the deposition source nozzles 121′ through which the deposition material 115 is discharged.


The barrier plates 131 may be respectively located between adjacent deposition source nozzles 121′. In other words, each of the deposition source nozzles 121′ may be located between two adjacent barrier plates 131. The deposition source nozzles 121′ may be respectively located at the midpoint between two adjacent barrier plates 131. However, the present invention is not limited to this structure. For example, a plurality of deposition source nozzles 121′ may be located between two adjacent barrier plates 131. In this case, the deposition source nozzles 121′ may be also respectively located at the midpoint between two adjacent barrier plates 131.


As described above, since the barrier plates 131 partition the space between the deposition source nozzle unit 120′ and the patterning slit sheet 150 into the plurality of sub-deposition spaces S, the deposition material 115 discharged through each of the deposition source nozzles 121′ is not mixed with the deposition material 115 discharged through the other deposition source nozzles 121′, and passes through the patterning slits 151 so as to be deposited on the substrate 500. In other words, the barrier plates 131 guide the deposition material 115, which is discharged through the deposition source nozzles 121′, to move straight, not to flow in the X-axis direction.


As described above, the deposition material 115 is forced to move straight by installing the barrier plates 131, so that a smaller shadow zone may be formed on the substrate 500 compared to a case where no barrier plates are installed. Thus, the organic layer deposition apparatus 100″ and the substrate 500 can be separated from each other by a distance (e.g., a predetermined distance). This will be described later in detail.


The barrier plate frame 132, which forms sides of the barrier plates 131, maintains the positions of the barrier plates 131, and guides the deposition material 115, which is discharged through the deposition source nozzles 121′, not to flow in the Y-axis direction. The barrier plate frame 132 in the embodiment of FIG. 15 includes two opposing barrier frame plates that are spaced from each other along the Y-axis direction with the barrier plates 131 located therebetween. The barrier frame plate on the left side in FIG. 15 is cutaway and one side of a second connection member 133 is not shown for convenience of illustration.


The deposition source nozzle unit 120′ and the barrier plate assembly 130 may be separated from each other by a distance (e.g., a predetermined distance). This may prevent the heat radiated from the deposition source unit 110 from being conducted to the barrier plate assembly 130. However, aspects of the present invention are not limited to this. For example, an appropriate heat insulator (not shown) may be further located between the deposition source nozzle unit 120′ and the barrier plate assembly 130. In this case, the deposition source nozzle unit 120′ and the barrier plate assembly 130 may be bound together with the heat insulator therebetween.


In addition, the barrier plate assembly 130 may be constructed to be detachable from the organic layer deposition apparatus 100″. In the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the deposition space is enclosed by using the barrier plate assembly 130, so that the deposition material 115 that remains undeposited is mostly deposited within the barrier plate assembly 130. Thus, since the barrier plate assembly 130 is constructed to be detachable from the organic layer deposition apparatus 100″, when a large amount of the deposition material 115 lies in the barrier plate assembly 130 after a long deposition process, the barrier plate assembly 130 may be detached from the organic layer deposition apparatus 100″ and then placed in a separate deposition material recycling apparatus in order to recover the deposition material 115. Due to the structure of the organic layer deposition apparatus 100″ according to the present embodiment, a reuse rate of the deposition material 115 may be increased, so that the deposition efficiency may be improved, and thus the manufacturing cost may be reduced.


The patterning slit sheet 150 and a frame 155 in which the patterning slit sheet 150 is bound are located between the deposition source 110 and the substrate 500. The frame 155 may be formed in a lattice shape, similar to a window frame. The patterning slit sheet 150 is bound inside the frame 155. The patterning slit sheet 150 has a plurality of patterning slits 151 arranged in the X-axis direction. Each of the patterning slits 151 extends in the Y-axis direction. The deposition material 115 that has been vaporized in the deposition source 110 and passed through the deposition source nozzle 121′ passes through the patterning slits 151 toward the substrate 500.


The patterning slit sheet 150 may be formed of a metal thin film. The patterning slit sheet 150 is fixed to the frame 155 such that a tensile force is exerted thereon. In other words, the patterning frame 155 may exert a stretching force to the patterning slit sheet 150 towards the periphery of the patterning slit sheet 150. The patterning slits 151 may be formed by etching the patterning slit sheet 150 to have a stripe pattern.


In the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the total number of patterning slits 151 may be greater than the total number of deposition source nozzles 121′. In addition, there may be a greater number of patterning slits 151 than deposition source nozzles 121′ located between two adjacent barrier plates 131. The number of patterning slits 151 may be equal to the number of deposition patterns to be formed on the substrate 500.


In addition, the barrier plate assembly 130 and the patterning slit sheet 150 may be arranged to be separated from each other by a distance (e.g., a predetermined distance). Alternatively, the barrier plate assembly 130 and the patterning slit sheet 150 may be connected by a second connection member 133. The temperature of the barrier plate assembly 130 may increase to 100° C. or higher due to the deposition source 110 whose temperature is high. Thus, in order to prevent the heat of the barrier plate assembly 130 from being conducted to the patterning slit sheet 150, the barrier plate assembly 130 and the patterning slit sheet 150 are separated from each other by a distance (e.g., a predetermined distance).


As described above, the organic layer deposition apparatus 100″ according to the current embodiment of the present invention performs deposition while being moved relative to the substrate 500. In order to move the organic layer deposition apparatus 100″ relative to the substrate 500, the patterning slit sheet 150 is separated from the substrate 500 by a distance (e.g., a predetermined distance). In addition, in order to prevent the formation of a relatively large shadow zone on the substrate 500 when the patterning slit sheet 150 and the substrate 500 are separated from each other, the barrier plates 131 are arranged between the deposition source nozzle unit 120′ and the patterning slit sheet 150 to force the deposition material 115 to move in a straight direction. Thus, the size of the shadow zone that may be formed on the substrate 500 may be reduced (e.g., sharply reduced).


In a conventional deposition method using a FMM, deposition is performed with the FMM in close contact with a substrate in order to prevent formation of a shadow zone on the substrate. However, when the FMM is used in close contact with the substrate, the contact may cause defects, such as scratches on patterns formed on the substrate. In addition, in the conventional deposition method, the size of the mask is the same as the size of the substrate since the mask cannot be moved relative to the substrate. Thus, the size of the mask is increased as display devices become larger. However, it is not easy to manufacture such a large mask.


In order to overcome this problem, in the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the patterning slit sheet 150 is arranged to be separated from the substrate 500 by a distance (e.g., a predetermined distance). This may be facilitated by installing the barrier plates 131 to reduce the size of the shadow zone formed on the substrate 500.


As described above, when the patterning slit sheet 150 is manufactured to be smaller than the substrate 500, the patterning slit sheet 150 may be moved relative to the substrate 500 during deposition. Thus, it is no longer necessary to manufacture a large FMM as used in the conventional deposition method. In addition, since the substrate 500 and the patterning slit sheet 150 are separated from each other, defects caused due to contact therebetween may be prevented. In addition, since it is unnecessary to contact the substrate 500 with the patterning slit sheet 150 during a deposition process, the manufacturing speed may be improved.



FIG. 18 is a schematic perspective cutaway view of an organic layer deposition apparatus 100″′ according to another embodiment of the present invention.


Referring to FIG. 18, the organic layer deposition apparatus 100″′ according to the current embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120″, a first barrier plate assembly 130, a second barrier plate assembly 140, and a patterning slit sheet 150.


Although a chamber is not illustrated in FIG. 18 for convenience of explanation, all the components of the organic layer deposition apparatus 500 may be located within a chamber that is maintained at an appropriate degree of vacuum. The chamber is maintained at an appropriate vacuum in order to allow a deposition material to move in a substantially straight line through the organic layer deposition apparatus 100′.


The substrate 500, which constitutes a deposition target on which a deposition material 115 is to be deposited, is located in the chamber. The deposition source 115 that contains and heats the deposition material 110 is located at an opposite side of the chamber to that at which the substrate 500 is located.


Structures of the deposition source 110 and the patterning slit sheet 150 are substantially the same as those in the embodiment described with reference to FIG. 15, and thus a detailed description thereof will not be provided here. The first barrier plate assembly 130 is also substantially the same as the barrier plate assembly 130 of the embodiment described with reference to FIG. 15, and thus a detailed description thereof will not be provided here.


The second barrier plate assembly 140 is located at a side of the first barrier plate assembly 130. The second barrier plate assembly 140 includes a plurality of second barrier plates 141, and a second barrier plate frame 142 that covers sides of the second barrier plates 141. The second barrier wall frame 142 may be frame shaped to surround the plurality of second barrier plates 141. A schematic cutaway view of the second barrier wall frame 142 is shown for convenience of illustration.


The plurality of second barrier plates 141 may be arranged parallel to each other at equal intervals in the X-axis direction. In addition, each of the second barrier plates 141 may be formed to extend in the YZ plane in FIG. 18, i.e., perpendicular to the X-axis direction.


The plurality of first barrier plates 131 and the second barrier plates 141 arranged as described above partition the space between the deposition source nozzle unit 120 and the patterning slit sheet 150. The deposition space is divided by the first barrier plates 131 and the second barrier plates 141 into sub-deposition spaces that respectively correspond to the deposition source nozzles 121″ through which the deposition material 115 is discharged.


The second barrier plates 141 may be arranged to correspond respectively to the first barrier plates 131. The second barrier plates 141 may be respectively aligned with the first barrier plates 131 to be parallel thereto on the same plane as the first barrier plates 131. Each pair of the corresponding first and second barrier plates 131 and 141 may be located on the same plane. Although the first barrier plates 131 and the second barrier plates 141 are respectively illustrated as having the same thickness in the X-axis direction, aspects of the present invention are not limited thereto. In other words, the second barrier plates 141, which need to be accurately aligned with the patterning slits 151, may be formed to be relatively thin, whereas the first barrier plates 131, which do not need to be precisely aligned with the patterning slits 151, may be formed to be relatively thick. This makes it easier to manufacture the organic layer deposition apparatus.


As illustrated in FIG. 1, a plurality of the above-described organic layer deposition apparatuses 100″′ may be successively located in the first chamber 731. In this case, the organic layer deposition apparatuses 100, 200, 300 and 400 may be used to deposit different deposition materials, respectively. For example, the organic layer deposition apparatuses 100, 200, 300 and 400 may have different patterning slit patterns, so that pixels of different colors, for example, red, green and blue, may be concurrently (e.g., simultaneously) defined through a film deposition process.



FIG. 19 is a cross-sectional view of an organic light-emitting display device manufactured by using an organic layer deposition apparatus, according to an embodiment of the present invention.


Referring to FIG. 19, the active matrix organic light-emitting display device according to the current embodiment is formed on a substrate 30. The substrate 30 may be formed of a transparent material, for example, glass, plastic or metal. An insulating layer 31, such as a buffer layer, is formed on an entire surface of the substrate 30.


A thin film transistor (TFT) 40, a capacitor 50, and an organic light-emitting diode (OLED) 60 are located on the insulating layer 31, as illustrated in FIG. 19.


A semiconductor active layer 41 is formed on an upper surface of the insulating layer 31 in a predetermined pattern. A gate insulating layer 32 is formed to cover the semiconductor active layer 41. The active layer 41 may include a p-type or n-type semiconductor material.


A gate electrode 42 of the TFT 40 is formed in a region of the gate insulating layer 32 corresponding to the active layer 41. An interlayer insulating layer 33 is formed to cover the gate electrode 42. The interlayer insulating layer 33 and the gate insulating layer 32 are etched by, for example, dry etching, to form a contact hole exposing parts of the active layer 41.


A source/drain electrode 43 is formed on the interlayer insulating layer 33 to contact the active layer 41 through the contact hole. A passivation layer 34 is formed to cover the source/drain electrode 43, and is etched to expose a part of the drain electrode 43. An insulating layer (not shown) may be further formed on the passivation layer 34 so as to planarize the passivation layer 34.


In addition, the OLED 60 displays image information (e.g., predetermined image information) by emitting red, green, or blue light as current flows. The OLED 60 includes a first electrode 61 located on the passivation layer 34. The first electrode 61 is electrically connected to the drain electrode 43 of the TFT 40.


A pixel defining layer 35 is formed to cover the first electrode 61. An opening 64 is formed in the pixel defining layer 35, and then an organic emission layer 63 is formed in a region defined by the opening 64. A second electrode 62 is formed on the organic emission layer 63.


The pixel defining layer 35, which defines individual pixels, is formed of an organic material. The pixel defining layer 35 also planarizes the surface of a region of the substrate 30 where the first electrode 61 is formed, and in particular, the surface of the passivation layer 34.


The first electrode 61 and the second electrode 62 are insulated from each other, and respectively apply voltages of opposite polarities to the organic emission layer 63 to induce light emission.


The organic emission layer 63 may be formed of a low-molecular weight organic material or a high-molecular weight organic material. When a low-molecular weight organic material is used, the organic emission layer 63 may have a single or multi-layer structure including at least one selected from the group consisting of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL). Examples of available organic materials may include copper phthalocyanine (CuPc), N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), and the like.


After the organic emission layer 63 is formed, the second electrode 62 may be formed by the same deposition method as used to form the organic emission layer 63.


The first electrode 61 may function as an anode, and the second electrode 62 may function as a cathode. Alternatively, the first electrode 61 may function as a cathode, and the second electrode 62 may function as an anode. The first electrode 61 may be patterned to correspond to individual pixel regions, and the second electrode 62 may be formed to cover all the pixels.


The first electrode 61 may be formed as a transparent electrode or a reflective electrode. Such a transparent electrode may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3). Such a reflective electrode may be formed by forming a reflective layer from silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof and forming a layer of ITO, IZO, ZnO, or In2O3 on the reflective layer. The first electrode 61 may be formed by forming a layer by, for example, sputtering, and then patterning the layer by, for example, photolithography.


The second electrode 62 may also be formed as a transparent electrode or a reflective electrode. When the second electrode 62 is formed as a transparent electrode, the second electrode 62 functions as a cathode. To this end, such a transparent electrode may be formed by depositing a metal having a low work function, such as lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg), or a compound thereof on a surface of the intermediate layer 63 and forming an auxiliary electrode layer or a bus electrode line thereon from ITO, IZO, ZnO, In2O3, or the like. When the second electrode 62 is formed as a reflective electrode, the reflective layer may be formed by depositing Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or a compound thereof on the entire surface of the organic emission layer 63. The second electrode 62 may be formed by using the same deposition method as used to form the organic emission layer 63 described above.


As described above, the organic layer deposition apparatus according to aspects of the present invention may be easily manufactured and may be simply applied to the manufacture of large-sized display devices on a mass scale. The organic layer deposition apparatus may improve manufacturing yield and deposition efficiency and may allow deposition materials to be reused.


The organic layer deposition apparatuses according to the embodiments of the present invention described above may be applied to form an organic layer or an inorganic layer of an organic TFT, and to form layers from various materials. For example, any suitable one of the thin film deposition apparatuses 100 (FIGS. 3-7), 100′ (FIG. 8-10), 100, 200, 300 (FIG. 14), 100″ (FIGS. 15-17) and 100″′ (FIG. 18) or those depicted in FIGS. 11-13 may be used as one or more of the thin film apparatuses 100, 200, 300 or 400 of FIGS. 1 and 2, or as additional thin film apparatuses not specifically shown in FIGS. 1 and 2. Further, as discussed above in reference to FIGS. 3-5, each thin film deposition apparatus described herein may include a controller for adjusting (e.g., dynamically adjusting) the interval (or distance) between the substrate and the patterning slit sheet based on the measurement generated by the interval measuring unit, such that the distance between the substrate and the patterning slit sheet can be maintained constantly based on the measurement.


While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims and their equivalents.

Claims
  • 1. A method of forming an organic layer on a substrate of an organic light-emitting display apparatus within a vacuum chamber, the method comprising: arranging the substrate to face an organic layer deposition apparatus; anddischarging a deposition material via a deposition source of the organic layer deposition apparatus onto the substrate;wherein a deposition source nozzle unit of the organic layer deposition apparatus is located at a side of the deposition source, the deposition source nozzle unit including a plurality of deposition source nozzles arranged in a first direction;wherein a patterning slit sheet of the organic layer deposition apparatus is located to be between the deposition source nozzle unit and the substrate, the patterning slit sheet having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, all the plurality of pattern slits being extended in the first direction;wherein an interval measuring unit of the organic layer deposition apparatus is located in the vacuum chamber and configured to measure a distance between the substrate and the patterning slit sheet; andwherein the organic layer deposition apparatus is configured to perform deposition while the substrate or the organic layer deposition apparatus is moved relative to the other in the first direction at a distance from the other so that the patterning slit sheet provides a plurality of lines of the discharged deposition material along the first direction on the substrate.
  • 2. The method of claim 1, wherein the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed as a single body.
  • 3. The method of claim 1, wherein the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally connected as a single body by a connection member for guiding movement of the deposition material.
  • 4. The method of claim 3, wherein the connection member seals a space between the deposition source nozzle unit located at the side of the deposition source, and the patterning slit sheet.
  • 5. The method of claim 1, wherein the plurality of deposition source nozzles are tilted at an angle with respect to a vertical line of a surface from which the deposition source nozzle is extruded.
  • 6. The method of claim 5, wherein the plurality of deposition source nozzles comprises deposition source nozzles arranged in two rows formed in the first direction, and the deposition source nozzles in one of the two rows are tilted to face towards the deposition source nozzles in the other one of the two rows.
  • 7. The method of claim 5, wherein the plurality of deposition source nozzles comprises deposition source nozzles arranged in two rows formed in the first direction, the deposition source nozzles of one of the two rows located at a first side of the patterning slit sheet are arranged to face towards a second side of the patterning slit sheet, andthe deposition source nozzles of the other one of the two rows located at the second side of the patterning slit sheet are arranged to face towards the first side of the patterning slit sheet.
  • 8. The method of claim 1, wherein the interval measuring unit is configured to measure the distance between the substrate and the patterning slit sheet in a vacuum condition.
  • 9. The method of claim 1, wherein the interval measuring unit is located above the substrate, and a sensing pattern to be sensed by the interval measuring unit is on one surface of the substrate.
  • 10. The method of claim 9, wherein the interval measuring unit is configured to sense the sensing pattern from the moving substrate and then to sense one surface of the patterning slit sheet to measure the interval between the substrate and the patterning slit sheet.
  • 11. The method of claim 9, wherein the sensing pattern is formed of metal.
  • 12. The method of claim 9, wherein the interval measuring unit is a capacitive sensor or an Eddy-current sensor.
  • 13. The method of claim 9, wherein the interval measuring unit is located below the patterning slit sheet, the sensing pattern to be sensed by the interval measuring unit is located on one surface of the substrate, andthe patterning slit sheet has a through hole, and comprises a sensing target configured to cover the through hole.
  • 14. The method of claim 13, wherein the sensing target and the sensing pattern are formed of metal.
  • 15. The method of claim 13, wherein the interval measuring unit is configured to sense the sensing target and then to sense the sensing pattern from the moving substrate through the through hole from which the sensing target has been removed, to measure the interval between the substrate and the patterning slit sheet.
  • 16. The method of claim 13, wherein the interval measuring unit is a capacitive sensor or an Eddy-current sensor.
  • 17. The method claim 1, wherein the interval measuring unit is located above the substrate and is configured to sense one surface of the substrate and one surface of the patterning slit sheet so as to measure the distance between the substrate and the patterning slit sheet.
  • 18. The method of claim 17, wherein the interval measuring unit is a confocal sensor.
  • 19. The method of claim 1, wherein the interval measuring unit is located below the patterning slit sheet, and the patterning slit sheet has a through hole.
  • 20. The method of claim 19, wherein the interval measuring unit is configured to sense one surface of the patterning slit sheet and to sense one surface of the substrate through the through hole so as to measure the interval between the substrate and the patterning slit sheet.
  • 21. The method of claim 19, wherein the interval measuring unit is a confocal sensor.
Priority Claims (1)
Number Date Country Kind
10-2010-0127090 Dec 2010 KR national
US Referenced Citations (277)
Number Name Date Kind
4416217 Nakamura et al. Nov 1983 A
4468648 Uchikune Aug 1984 A
4687939 Miyauchi et al. Aug 1987 A
4792378 Rose et al. Dec 1988 A
4901667 Suzuki et al. Feb 1990 A
5454847 Jacoboni et al. Oct 1995 A
5460654 Kikkawa et al. Oct 1995 A
5487609 Asada Jan 1996 A
5742129 Nagayama et al. Apr 1998 A
5909995 Wolf et al. Jun 1999 A
6045671 Wu et al. Apr 2000 A
6091195 Forrest et al. Jul 2000 A
6099649 Schmitt et al. Aug 2000 A
6274198 Dautartas Aug 2001 B1
6280821 Kadunce et al. Aug 2001 B1
6371451 Choi Apr 2002 B1
6417034 Kitazume et al. Jul 2002 B2
6443597 Natori Sep 2002 B1
6483690 Nakajima et al. Nov 2002 B1
6541130 Fukuda Apr 2003 B2
6554969 Chong Apr 2003 B1
6579422 Kakinuma Jun 2003 B1
6589673 Kido et al. Jul 2003 B1
6650023 Kim Nov 2003 B2
6699324 Berdin et al. Mar 2004 B1
6749906 Van Slyke Jun 2004 B2
6776847 Yamazaki et al. Aug 2004 B2
6837939 Klug et al. Jan 2005 B1
6878209 Himeshima et al. Apr 2005 B2
6946783 Kim Sep 2005 B2
6995035 Cok et al. Feb 2006 B2
7006202 Byun et al. Feb 2006 B2
RE39024 Takahashi Mar 2006 E
7078070 Peng Jul 2006 B2
7199520 Fujii et al. Apr 2007 B2
7282855 Park et al. Oct 2007 B2
7322248 Long Jan 2008 B1
7495389 Noguchi et al. Feb 2009 B2
7601439 Chun et al. Oct 2009 B2
7776457 Lee et al. Aug 2010 B2
7872256 Sung et al. Jan 2011 B2
7910386 Shiang et al. Mar 2011 B2
7964037 Fukuda et al. Jun 2011 B2
8022448 Luu et al. Sep 2011 B1
8128753 Bulovic et al. Mar 2012 B2
8137466 Kang et al. Mar 2012 B2
8188476 Takagi et al. May 2012 B2
8193011 Kang et al. Jun 2012 B2
20010004186 Song et al. Jun 2001 A1
20010006827 Yamazaki et al. Jul 2001 A1
20010019807 Yamada et al. Sep 2001 A1
20010026638 Sangu et al. Oct 2001 A1
20010034175 Miyazaki et al. Oct 2001 A1
20020011785 Tang et al. Jan 2002 A1
20020017245 Tsubaki et al. Feb 2002 A1
20020033136 Savage et al. Mar 2002 A1
20020036759 Ise et al. Mar 2002 A1
20020050061 Komyoji et al. May 2002 A1
20020076847 Yamada et al. Jun 2002 A1
20020168577 Yoon Nov 2002 A1
20020179013 Kido et al. Dec 2002 A1
20020187253 Marcus et al. Dec 2002 A1
20020194727 Cho et al. Dec 2002 A1
20020197393 Kuwabara Dec 2002 A1
20030021886 Baele Jan 2003 A1
20030101932 Kang Jun 2003 A1
20030101937 Van Slyke et al. Jun 2003 A1
20030117602 Kobayashi et al. Jun 2003 A1
20030118950 Chao et al. Jun 2003 A1
20030124764 Yamazaki et al. Jul 2003 A1
20030151637 Nakamura et al. Aug 2003 A1
20030164934 Nishi et al. Sep 2003 A1
20030168013 Freeman et al. Sep 2003 A1
20030173896 Grushin et al. Sep 2003 A1
20030221614 Kang et al. Dec 2003 A1
20030221620 Yamazaki Dec 2003 A1
20030232563 Kamiyama et al. Dec 2003 A1
20040016907 Shi Jan 2004 A1
20040029028 Shimizu Feb 2004 A1
20040056244 Marcus et al. Mar 2004 A1
20040086639 Grantham et al. May 2004 A1
20040096771 Kashiwagi et al. May 2004 A1
20040115338 Yoneda Jun 2004 A1
20040115342 Shigemura Jun 2004 A1
20040123804 Yamazaki et al. Jul 2004 A1
20040127066 Jung Jul 2004 A1
20040134428 Sasaki et al. Jul 2004 A1
20040142108 Atobe et al. Jul 2004 A1
20040144321 Grace et al. Jul 2004 A1
20040157167 Morii Aug 2004 A1
20040183435 Ohshita Sep 2004 A1
20040194702 Sasaki et al. Oct 2004 A1
20040195530 Kwak et al. Oct 2004 A1
20040216673 Sakata et al. Nov 2004 A1
20040255857 Chow et al. Dec 2004 A1
20040263547 Sugahara Dec 2004 A1
20040263771 Jeong et al. Dec 2004 A1
20050001546 Yamaguchi Jan 2005 A1
20050016461 Klug et al. Jan 2005 A1
20050031836 Hirai Feb 2005 A1
20050037136 Yamamoto Feb 2005 A1
20050039684 Yi et al. Feb 2005 A1
20050072359 Kim Apr 2005 A1
20050072361 Yang et al. Apr 2005 A1
20050079418 Kelley et al. Apr 2005 A1
20050110400 Nakamura May 2005 A1
20050129489 Quan et al. Jun 2005 A1
20050153472 Yotsuya Jul 2005 A1
20050166842 Sakamoto Aug 2005 A1
20050166844 Gralenski Aug 2005 A1
20050183670 Grantham et al. Aug 2005 A1
20050186330 Kim et al. Aug 2005 A1
20050213021 Myoung Sep 2005 A1
20050217584 Abiko et al. Oct 2005 A1
20050229848 Shinriki et al. Oct 2005 A1
20050244580 Cok et al. Nov 2005 A1
20050263074 Masuda et al. Dec 2005 A1
20060011136 Yamazaki et al. Jan 2006 A1
20060012771 Jeong Jan 2006 A1
20060022590 Aziz et al. Feb 2006 A1
20060040132 Liao et al. Feb 2006 A1
20060045958 Abiko et al. Mar 2006 A1
20060066231 Nishikawa et al. Mar 2006 A1
20060090705 Kim May 2006 A1
20060102078 Fairbairn et al. May 2006 A1
20060110544 Kim et al. May 2006 A1
20060113907 Im et al. Jun 2006 A1
20060115585 Bulovic et al. Jun 2006 A1
20060130766 Kim et al. Jun 2006 A1
20060144325 Jung et al. Jul 2006 A1
20060152641 Brody Jul 2006 A1
20060164786 Kobayashi et al. Jul 2006 A1
20060169211 Kim et al. Aug 2006 A1
20060174829 An et al. Aug 2006 A1
20060205101 Lee et al. Sep 2006 A1
20060244696 Jung et al. Nov 2006 A1
20060267294 Busse et al. Nov 2006 A1
20060269671 Kim et al. Nov 2006 A1
20060272572 Uematsu et al. Dec 2006 A1
20060278522 Kim et al. Dec 2006 A1
20060278945 Sakurai Dec 2006 A1
20060280588 Blonigan et al. Dec 2006 A1
20070009552 Whitehead et al. Jan 2007 A1
20070009652 Manz et al. Jan 2007 A1
20070017445 Takehara et al. Jan 2007 A1
20070022955 Bender et al. Feb 2007 A1
20070024185 Kitamura et al. Feb 2007 A1
20070046185 Kim Mar 2007 A1
20070046913 Shibazaki Mar 2007 A1
20070054044 Shimosaki et al. Mar 2007 A1
20070075955 Jung et al. Apr 2007 A1
20070077358 Jeong et al. Apr 2007 A1
20070148337 Nichols et al. Jun 2007 A1
20070148348 Huh et al. Jun 2007 A1
20070157879 Yotsuya Jul 2007 A1
20070158471 Park et al. Jul 2007 A1
20070163497 Grace et al. Jul 2007 A1
20070178708 Ukigaya Aug 2007 A1
20070190235 Yamazaki et al. Aug 2007 A1
20070195844 Ma et al. Aug 2007 A1
20070231460 Ukigaya Oct 2007 A1
20070275497 Kwack et al. Nov 2007 A1
20070297887 Tanaka Dec 2007 A1
20080018236 Arai et al. Jan 2008 A1
20080038935 Baude et al. Feb 2008 A1
20080057183 Spindler et al. Mar 2008 A1
20080100204 Kim May 2008 A1
20080115729 Oda et al. May 2008 A1
20080118743 Lee et al. May 2008 A1
20080129194 Abe et al. Jun 2008 A1
20080131587 Boroson et al. Jun 2008 A1
20080145521 Guo et al. Jun 2008 A1
20080174235 Kim et al. Jul 2008 A1
20080216741 Ling et al. Sep 2008 A1
20080238294 Xu et al. Oct 2008 A1
20080251785 Noh et al. Oct 2008 A1
20080286461 Noguchi et al. Nov 2008 A1
20080298947 Yeo et al. Dec 2008 A1
20080309718 Oya et al. Dec 2008 A1
20090001882 Park et al. Jan 2009 A1
20090014412 Nozawa et al. Jan 2009 A1
20090017192 Matsuura Jan 2009 A1
20090124033 Moriyama May 2009 A1
20090133629 Kamikawa et al. May 2009 A1
20090153033 Lee et al. Jun 2009 A1
20090165713 Kim et al. Jul 2009 A1
20090169868 Haglund, Jr. et al. Jul 2009 A1
20090170230 Kidu et al. Jul 2009 A1
20090181163 Uetake Jul 2009 A1
20090208754 Chu et al. Aug 2009 A1
20090220691 Kim Sep 2009 A1
20090229524 Kim et al. Sep 2009 A1
20090232976 Yoon et al. Sep 2009 A1
20090269881 Furuta et al. Oct 2009 A1
20090277386 Takagi et al. Nov 2009 A1
20090279173 Chui et al. Nov 2009 A1
20090302750 Jun et al. Dec 2009 A1
20090304906 Suduo et al. Dec 2009 A1
20090304924 Gadgil Dec 2009 A1
20090308317 Sone et al. Dec 2009 A1
20090315456 Furukawa et al. Dec 2009 A1
20100001301 Karg et al. Jan 2010 A1
20100055810 Sung et al. Mar 2010 A1
20100086672 Von Drasek et al. Apr 2010 A1
20100089443 Bloomstein et al. Apr 2010 A1
20100090594 Choi et al. Apr 2010 A1
20100130020 Kim et al. May 2010 A1
20100156279 Tamura et al. Jun 2010 A1
20100165454 Suetsugu et al. Jul 2010 A1
20100170439 Negishi Jul 2010 A1
20100192856 Sung et al. Aug 2010 A1
20100196607 Carlson et al. Aug 2010 A1
20100255198 Cleary et al. Oct 2010 A1
20100271602 Hanazaki Oct 2010 A1
20100275842 Park et al. Nov 2010 A1
20100297348 Lee et al. Nov 2010 A1
20100297349 Lee et al. Nov 2010 A1
20100310768 Lee et al. Dec 2010 A1
20100328197 Lee et al. Dec 2010 A1
20100330265 Lee et al. Dec 2010 A1
20100330712 Lee et al. Dec 2010 A1
20110033619 Lee et al. Feb 2011 A1
20110033621 Lee et al. Feb 2011 A1
20110042659 Kim et al. Feb 2011 A1
20110045617 Kang et al. Feb 2011 A1
20110048320 Choi et al. Mar 2011 A1
20110052791 Jo et al. Mar 2011 A1
20110052795 Choi et al. Mar 2011 A1
20110053296 Lee et al. Mar 2011 A1
20110053300 Ryu et al. Mar 2011 A1
20110068331 Koh et al. Mar 2011 A1
20110123707 Lee et al. May 2011 A1
20110165327 Park et al. Jul 2011 A1
20110168986 Lee et al. Jul 2011 A1
20110220019 Lee et al. Sep 2011 A1
20110241438 Kim et al. Oct 2011 A1
20110262625 Park et al. Oct 2011 A1
20110266944 Song et al. Nov 2011 A1
20120009328 Ryu et al. Jan 2012 A1
20120009332 Kim et al. Jan 2012 A1
20120009706 Choi et al. Jan 2012 A1
20120028390 Lee et al. Feb 2012 A1
20120068199 Sung et al. Mar 2012 A1
20120068201 Sung et al. Mar 2012 A1
20120070928 Kim et al. Mar 2012 A1
20120083061 Kang et al. Apr 2012 A1
20120097992 Jeong Apr 2012 A1
20120100282 Lee et al. Apr 2012 A1
20120103253 Park et al. May 2012 A1
20120132137 Oh et al. May 2012 A1
20120145077 Chang et al. Jun 2012 A1
20120148743 Bulovic et al. Jun 2012 A1
20120174865 Choi et al. Jul 2012 A1
20120175605 Shin et al. Jul 2012 A1
20120183676 Sonoda et al. Jul 2012 A1
20120214263 Yamazaki et al. Aug 2012 A1
20120299016 Choi Nov 2012 A1
20120299023 Lee et al. Nov 2012 A1
20120299024 Lee et al. Nov 2012 A1
20120301614 Choi et al. Nov 2012 A1
20120301986 Choi et al. Nov 2012 A1
20120313251 Kato Dec 2012 A1
20130001528 Chang et al. Jan 2013 A1
20130008379 Chang et al. Jan 2013 A1
20130032829 Sung et al. Feb 2013 A1
20130157016 Kim Jun 2013 A1
20130217164 Kang et al. Aug 2013 A1
20130291796 Inoue et al. Nov 2013 A1
20130298829 Jo et al. Nov 2013 A1
20130341598 Chang et al. Dec 2013 A1
20140010957 Inoue et al. Jan 2014 A1
20140014917 Lee et al. Jan 2014 A1
20140014918 Han Jan 2014 A1
20140014920 Lee Jan 2014 A1
20140014921 Choi Jan 2014 A1
20140014924 Oh et al. Jan 2014 A1
20140014929 Lee et al. Jan 2014 A1
Foreign Referenced Citations (291)
Number Date Country
1476279 Feb 2004 CN
1489419 Apr 2004 CN
1556872 Dec 2004 CN
1607868 Apr 2005 CN
1682569 Oct 2005 CN
1704501 Dec 2005 CN
1814854 Aug 2006 CN
1841696 Oct 2006 CN
1 413 644 Apr 2004 EP
1 418 250 May 2004 EP
1 518 940 Mar 2005 EP
2354270 Aug 2011 EP
57-194252 Nov 1982 JP
2-247372 Oct 1990 JP
04-272170 Sep 1992 JP
5-22405 Mar 1993 JP
5-98425 Apr 1993 JP
5-230628 Sep 1993 JP
08-027568 Jan 1996 JP
9-95776 Apr 1997 JP
10-50478 Feb 1998 JP
10-120171 May 1998 JP
10-270535 Oct 1998 JP
11-144865 May 1999 JP
2000-068054 Mar 2000 JP
2000-282219 Oct 2000 JP
2000-323277 Nov 2000 JP
2001-28325 Jan 2001 JP
2001-052862 Feb 2001 JP
2001-093667 Apr 2001 JP
2002-75638 Mar 2002 JP
2002-175878 Jun 2002 JP
2002-348659 Dec 2002 JP
2003-003250 Jan 2003 JP
2003-077662 Mar 2003 JP
2003-157973 May 2003 JP
2003-197531 Jul 2003 JP
2003-297562 Oct 2003 JP
2003-321767 Nov 2003 JP
2003-347394 Dec 2003 JP
2004-035964 Feb 2004 JP
2004-043898 Feb 2004 JP
2004-76150 Mar 2004 JP
2004-91858 Mar 2004 JP
2004-103269 Apr 2004 JP
2004-103341 Apr 2004 JP
2004-107764 Apr 2004 JP
2004-137583 May 2004 JP
2004-143521 May 2004 JP
2004-169169 Jun 2004 JP
2004-199919 Jul 2004 JP
2004-342455 Dec 2004 JP
2004-349101 Dec 2004 JP
2004-355975 Dec 2004 JP
2005-044592 Feb 2005 JP
2005-101505 Apr 2005 JP
2005-122980 May 2005 JP
2005-165015 Jun 2005 JP
2005-174843 Jun 2005 JP
2005-206939 Aug 2005 JP
2005-213616 Aug 2005 JP
2005-235568 Sep 2005 JP
2005-293968 Oct 2005 JP
2005-296737 Oct 2005 JP
2006-028583 Feb 2006 JP
2006-172930 Jun 2006 JP
2006-176809 Jul 2006 JP
2006-210038 Aug 2006 JP
2006-219760 Aug 2006 JP
2006-275433 Oct 2006 JP
2006-292955 Oct 2006 JP
2006-307247 Nov 2006 JP
2007-047293 Feb 2007 JP
2007-66862 Mar 2007 JP
2007-146219 Jun 2007 JP
2007-157886 Jun 2007 JP
2007-186740 Jul 2007 JP
2007-242436 Sep 2007 JP
2007-291506 Nov 2007 JP
2008-19477 Jan 2008 JP
2008-108628 May 2008 JP
2008-121098 May 2008 JP
2008-521165 Jun 2008 JP
2008-196003 Aug 2008 JP
2008-248301 Oct 2008 JP
2008-300056 Dec 2008 JP
2009-019243 Jan 2009 JP
2009-024208 Feb 2009 JP
2009-049223 Mar 2009 JP
2009-081165 Apr 2009 JP
2009-087910 Apr 2009 JP
2009-117231 May 2009 JP
2010-159167 Jul 2010 JP
2010-261081 Nov 2010 JP
2011-47035 Mar 2011 JP
2011-146377 Jul 2011 JP
2012-92448 May 2012 JP
2012-211352 Nov 2012 JP
1997-0008709 Feb 1997 KR
10-0257219 Feb 2000 KR
10-2000-0019254 Apr 2000 KR
10-2000-0023929 May 2000 KR
2001-0024652 Mar 2001 KR
2001-0030175 Apr 2001 KR
10-2001-0039298 May 2001 KR
10-2001-0059939 Jul 2001 KR
10-2001-0092914 Oct 2001 KR
2001-0093666 Oct 2001 KR
20-0257218 Dec 2001 KR
10-2002-0000201 Jan 2002 KR
2002-0001555 Jan 2002 KR
10-2002-0050922 Jun 2002 KR
10-2002-0090934 Dec 2002 KR
10-2002-0091457 Dec 2002 KR
2003-0001745 Jan 2003 KR
10-2003-0034730 May 2003 KR
10-2003-0043012 Jun 2003 KR
2003-0046090 Jun 2003 KR
2003-0069684 Aug 2003 KR
10-0405080 Nov 2003 KR
10-0406059 Nov 2003 KR
10-2003-0091947 Dec 2003 KR
10-2003-0093959 Dec 2003 KR
2003-0094033 Dec 2003 KR
10-2004-0014258 Feb 2004 KR
20-0342433 Feb 2004 KR
10-2004-0034537 Apr 2004 KR
10-2004-0039910 May 2004 KR
10-0430336 May 2004 KR
10-2004-0050045 Jun 2004 KR
10-2004-0069281 Aug 2004 KR
10-2004-0084747 Oct 2004 KR
10-2004-0087142 Oct 2004 KR
10-2004-0110718 Dec 2004 KR
10-0463212 Dec 2004 KR
10-2005-0018234 Feb 2005 KR
10-2005-0024324 Mar 2005 KR
10-2005-0028943 Mar 2005 KR
10-2005-0039140 Apr 2005 KR
10-0483487 Apr 2005 KR
10-2005-0062853 Jun 2005 KR
10-2005-0082644 Aug 2005 KR
10-0520159 Oct 2005 KR
10-0532657 Dec 2005 KR
10-2006-0008602 Jan 2006 KR
10-2006-0018745 Mar 2006 KR
10-2006-0020050 Mar 2006 KR
10-2006-0045225 May 2006 KR
10-2006-0049050 May 2006 KR
10-2006-0051746 May 2006 KR
10-2006-0053926 May 2006 KR
10-2006-0056706 May 2006 KR
10-2006-0058459 May 2006 KR
10-2009-0052828 May 2006 KR
10-2006-0059068 Jun 2006 KR
10-2006-0059323 Jun 2006 KR
10-2006-0060994 Jun 2006 KR
10-2006-0065978 Jun 2006 KR
10-2006-0073367 Jun 2006 KR
10-2006-0077887 Jul 2006 KR
10-2006-0080475 Jul 2006 KR
10-2006-0080481 Jul 2006 KR
10-2006-0080482 Jul 2006 KR
10-2006-0081943 Jul 2006 KR
10-2006-0083510 Jul 2006 KR
10-2006-0092387 Aug 2006 KR
10-2006-0098755 Sep 2006 KR
10-2006-0104288 Oct 2006 KR
10-2006-0104675 Oct 2006 KR
10-2006-0104677 Oct 2006 KR
10-2006-0109561 Oct 2006 KR
10-2006-0109627 Oct 2006 KR
10-0635903 Oct 2006 KR
10-2006-0114462 Nov 2006 KR
10-2006-0114477 Nov 2006 KR
10-2006-0114573 Nov 2006 KR
10-0645719 Nov 2006 KR
10-0646160 Nov 2006 KR
10-2006-0123944 Dec 2006 KR
10-0687007 Feb 2007 KR
10-0696547 Mar 2007 KR
10-0696550 Mar 2007 KR
10-0697663 Mar 2007 KR
10-0698033 Mar 2007 KR
10-0700466 Mar 2007 KR
10-2007-0035796 Apr 2007 KR
10-2007-0037848 Apr 2007 KR
10-0711885 Apr 2007 KR
10-2007-0050793 May 2007 KR
10-0723627 May 2007 KR
10-2007-0056190 Jun 2007 KR
10-0726132 Jun 2007 KR
10-0736218 Jul 2007 KR
10-0741142 Jul 2007 KR
10-2007-0078713 Aug 2007 KR
10-2007-0080635 Aug 2007 KR
10-2007-0091437 Sep 2007 KR
10-2006-0028115 Oct 2007 KR
10-2007-0097218 Oct 2007 KR
10-2007-0098122 Oct 2007 KR
10-2007-0101842 Oct 2007 KR
10-2007-0105595 Oct 2007 KR
10-0768212 Oct 2007 KR
10-0770653 Oct 2007 KR
10-2007-0112668 Nov 2007 KR
10-2007-0114094 Nov 2007 KR
10-0739309 Dec 2007 KR
10-0787457 Dec 2007 KR
10-2008-0001184 Jan 2008 KR
10-2008-0003720 Jan 2008 KR
10-2008-0007896 Jan 2008 KR
10-2008-0009285 Jan 2008 KR
10-0797787 Jan 2008 KR
10-0800125 Jan 2008 KR
10-0815265 Mar 2008 KR
10-2008-0036983 Apr 2008 KR
10-0823508 Apr 2008 KR
10-0823511 Apr 2008 KR
10-2008-0044239 May 2008 KR
10-2008-0044775 May 2008 KR
10-2008-0046761 May 2008 KR
10-0827760 May 2008 KR
10-2008-0048653 Jun 2008 KR
10-2008-0055124 Jun 2008 KR
10-2008-0057159 Jun 2008 KR
10-0839380 Jun 2008 KR
10-2008-0060400 Jul 2008 KR
10-2008-0061132 Jul 2008 KR
10-2008-0061666 Jul 2008 KR
10-2008-0061774 Jul 2008 KR
10-2008-0062212 Jul 2008 KR
10-0899279 Jul 2008 KR
10-2008-0076574 Aug 2008 KR
10-2008-0088737 Oct 2008 KR
10-2008-0104479 Dec 2008 KR
10-2008-0104695 Dec 2008 KR
10-2008-0109559 Dec 2008 KR
10-2009-0017910 Feb 2009 KR
10-0889872 Mar 2009 KR
10-2009-0038733 Apr 2009 KR
10-2009-0040618 Apr 2009 KR
10-2009-0047953 May 2009 KR
10-2009-0052155 May 2009 KR
10-2009-0053417 May 2009 KR
10-2009-0066996 Jun 2009 KR
10-2009-0075887 Jul 2009 KR
10-2009-0079765 Jul 2009 KR
10-2009-0081717 Jul 2009 KR
10-0908232 Jul 2009 KR
10-2009-0093161 Sep 2009 KR
10-2009-0094911 Sep 2009 KR
10-2009-0097453 Sep 2009 KR
10-2009-0107702 Oct 2009 KR
10-0922763 Oct 2009 KR
10-2010-0000128 Jan 2010 KR
10-2010-0000129 Jan 2010 KR
10-2010-0002381 Jan 2010 KR
10-2010-0026655 Mar 2010 KR
10-2010-0038088 Apr 2010 KR
10-2010-0044606 Apr 2010 KR
10-2010-0047796 May 2010 KR
10-0961110 Jun 2010 KR
10-2010-0090070 Aug 2010 KR
10-2010-0099806 Sep 2010 KR
10-2010-0119368 Nov 2010 KR
10-2010-0126125 Dec 2010 KR
10-2010-0128589 Dec 2010 KR
10-2010-0130786 Dec 2010 KR
10-2010-0138139 Dec 2010 KR
10-1017654 Feb 2011 KR
10-2011-0021090 Mar 2011 KR
10-2011-0022512 Mar 2011 KR
10-2011-0032589 Mar 2011 KR
10-2011-0082418 Jul 2011 KR
10-2011-0101767 Sep 2011 KR
10-2011-0110525 Oct 2011 KR
10-2011-0120213 Nov 2011 KR
10-2012-0006322 Jan 2012 KR
10-2012-0006324 Jan 2012 KR
10-2012-0012300 Feb 2012 KR
10-2012-0042155 May 2012 KR
10-2012-0065789 Jun 2012 KR
10-2012-0080855 Jul 2012 KR
10-2012-0081811 Jul 2012 KR
10-1193186 Oct 2012 KR
10-2012-0131545 Dec 2012 KR
10-2013-0007308 Jan 2013 KR
9925894 May 1999 WO
03043067 May 2003 WO
WO2004016406 Feb 2004 WO
2008004792 Jan 2008 WO
Non-Patent Literature Citations (76)
Entry
Patent Abstracts of Japan, and English machine translation of Japanese Publication 2001-052862, 20 pages.
Patent Abstracts of Japan, and English machine translation of Japanese Publication 2003-003250, 25 pages.
Korean Patent Abstracts, Publication No. 1020020086047, dated Nov. 18, 2002, for corresponding Korean Patent 10-0405080.
Korean Patent Abstracts, Publication No. 1020020088662, dated Nov. 29, 2002, for corresponding Korean Patent 10-0463212.
Korean Patent Abstracts, Publication No. 1020050045619, dated May 17, 2005, for corresponding Korean Patent 10-0520159.
Korean Patent Abstracts, Publication No. 1020040062203, dated Jul. 7, 2002, for corresponding Korean Patent 10-0646160.
Korean Patent Abstracts, Publication No. 1020060101987, dated Sep. 27, 2006, for corresponding Korean Patent 10-0687007.
Korean Patent Abstracts, Publication No. 1020020056238, dated Jul. 10, 2002, for corresponding Korean Patent 10-0698033.
Korean Patent Abstracts, Publication No. 1020050078637, datedugust 5, 2005, for corresponding Korean Patent 10-0700466.
Korean Patent Abstracts, Publication No. 1020070025164, dated Mar. 8, 2007, for corresponding Korean Patent 10-0711885.
Korean Patent Abstracts, Publication No. 1020020034272, dated May 9, 2002, for corresponding Korean Patent 10-0726132.
Korean Patent Abstracts, Publication No. 1020060126267, dated Dec. 6, 2006, for corresponding Korean Patent 10-0797787.
English Abstract, Publication No. 1020080002189, dated Jan. 4, 2008, for corresponding Korean Patent 10-0800125.
Korean Patent Abstracts, Publication No. 1020070050793. dated May 16, 2007, for corresponding Korean Patent 10-0815265.
Korean Patent Abstracts, Publication No. 1020010062735, dated Jul. 7, 2001, for corresponding Korean Patent 10-0827760.
Korean Patent Abstracts, Publication No. 1020080038650, dated May 7, 2008, for corresponding Korean Patent 10-0839380.
Machine English Translation of JP 2009-024208 A.
European Search Report dated May 13, 2011 for European Application No. 11250019.4 (6 pages).
European Search Report dated May 20, 2011 for European Application No. 10251404.9 (12 pages).
European Search Report dated May 27, 2011 for European Application No. 10251514.5 (11 pages).
European Search Report dated Sep. 6, 2010 for European Application No. 10250962.7 (5 pages).
U.S. Interview Summary dated Mar. 11, 2014 for U.S. Appl. No. 12/813,786 (4 pages).
U.S. Office action dated Apr. 1, 2013, issued to U.S. Appl. No. 12/784,774 (44 pages).
U.S. Office action dated Apr. 29, 2013, issued to U.S. Appl. No. 12/820,355 (31 pages).
U.S. Office action dated Aug. 13, 2013, issued to U.S. Appl. No. 13/194,759, (28 pages).
U.S. Office Action dated Aug. 2, 2013 for U.S. Appl. No. 12/868,099 (32 pages).
U.S. Office action dated Aug. 21, 2013 issued in cross-reference U.S. Appl. No. 12/820,355 (14 pages).
U.S. Office action dated Aug. 7, 2013, issued to U.S. Appl. No. 13/015,357, (30 pages).
U.S. Office action dated Aug. 8, 2013, for cross reference U.S. Appl. No. 13/093,707, (7 pages).
U.S. Office Action dated Dec. 13, 2011 for U.S. Appl. No. 12/849,193 (30 pages).
U.S. Office action dated Dec. 16, 2013 for U.S. Appl. No. 14/054,536 (35 pages).
U.S. Office action dated Dec. 17,2012, issued to U.S. Appl. No. 12/873,556 (37 pages).
U.S. Office action dated Dec. 26, 2012, issued to U.S. Appl. No. 12/815,673 (21 pages).
U.S. Office action dated Feb. 11, 2014, for cross reference U.S. Appl. No. 13/178,472 (8 pages).
U.S. Office action dated Feb. 26, 2013, issued to U.S. Appl. No. 12/794,093 (31 pages).
U.S. Office action dated Feb. 6, 2014, for U.S. Appl. No. 12/984,231 (16 pages).
U.S. Office action dated Jan. 25, 2013, issued to U.S. Appl. No. 13/015,357 (21 pages).
U.S. Office action dated Jul. 11, 2013 for U.S. Appl. No. 13/461,669 (27 pages).
U.S. Office action dated Jul. 17, 2013, issued to U.S. Appl. No. 12/984,231, (18 pages).
U.S. Office action dated Jul. 24, 2013, issued to U.S. Appl. No. 12/784,804, (52 pages).
U.S. Office action dated Jul. 3, 2013 in U.S. Appl. No. 12/873,689 (48 pages).
U.S. Office action dated Jul. 5, 2013, issued to U.S. Appl. No. 12/873,556, (17 pages).
U.S. Office Action dated Jun. 11, 2013 for U.S. Appl. No. 12/979,656 (50 pages).
U.S. Office action dated Jun. 11, 2013, issued to U.S. Appl. No. 12/862,125 (37 pages).
U.S. Office action dated Jun. 17, 2013, for cross reference U.S. Appl. No. 13/180,454, (23 pages).
U.S. Office Action dated Jun. 21, 2011 for U.S. Appl. No. 12/862,153 (21 pages).
U.S. Office action dated Jun. 26, 2013, issued to U.S. Appl. No. 12/794,093 (20 pages).
U.S. Office action dated Mar. 15, 2013, issued to U.S. Appl. No. 12/813,786 (33 pages).
U.S. Office action dated Mar. 17, 2014, for U.S. Appl. No. 12/950,361 (48 pages).
U.S. Office action dated Mar. 18, 2013, issued to U.S. Appl. No. 12/984,231 (29 pages).
U.S. Office action dated Mar. 19, 2013, issued to U.S. Appl. No. 13/194,759 (36 pages).
U.S. Office action dated Mar. 22, 2013, issued to U.S. Appl. No. 12/987,569 (12 pages).
U.S. Office Action dated Mar. 23, 2012 for U.S. Appl. No. 12/849,193 (17 pages).
U.S. Office action dated May 22, 2013, for cross reference U.S. Appl. No. 13/219,427, (26 pages).
U.S. Office action dated May 24, 2013, for U.S. Appl. No. 13/279,077 (20 pages).
U.S. Office action dated May 24, 2013, issued to U.S. Appl. No. 12/849,092 (31 pages).
U.S. Office Action dated May 7, 2013, issued in U.S. Appl. No. 12/820,270 (37 pages).
U.S. Office action dated Nov. 20, 2013, for cross reference U.S. Appl. No. 12/868,099, (14 pages).
U.S. Office action dated Nov. 25, 2013, issued to U.S. Appl. No. 13/176,701, (49 pages).
U.S. Office action dated Nov. 4, 2013, for U.S. Appl. No. 13/219,427, (26 pages).
U.S. Office action dated Oct. 1, 2013, issued to U.S. Appl. No. 12/849,092, (13 pages).
U.S. Office action dated Oct. 11, 2013, issued to U.S. Appl. No. 12/907,396, (44 pages).
U.S. Office action dated Oct. 21, 2013, issued to U.S. Appl. No. 12/987,569, (14 pages).
U.S. Office Action dated Oct. 3, 2013 for U.S. Appl. No. 12/869,830 (28 pages).
U.S. Office action dated Oct. 7, 2013, issued to U.S. Appl. No. 13/279,077, (29 pages).
U.S. Office action dated Sep. 20, 2013, issued to U.S. Appl. No. 13/014,225, (33 pages).
U.S. Office action dated Sep. 25, 2013, for U.S. Appl. No. 13/031,756, (34 pages).
U.S. Patent Office Action dated May 16, 2013, issued to U.S. Appl. No. 13/235,337 (28 pages).
US Notice of Allowance, dated Mar. 18, 2013, issued to U.S. Appl. No. 12/795,001 (29 pages).
US Office action dated Dec. 20, 2012, issued to U.S. Appl. No. 12/984,289 (20pages).
US Office action dated Sep. 12, 2012, in U.S. Appl. No. 12/515,673 (26 pages).
U.S. Notice of Allowance dated Feb. 20, 2014, issued to U.S. Appl. No. 12/907,396 (13 pages).
U.S. Notice of Allowance dated Feb. 28, 2014, issued to U.S. Appl. No. 13/279,077 (12 pages).
U.S. Notice of Allowance dated May 9, 2014 for U.S. Appl. No. 13/194,759 (27 pages).
U.S. Office action dated Apr. 18, 2014, issued to U.S. Appl. No. 12/814,816 (9 pages).
U.S. Office action dated Sep. 27, 2013, issued to U.S. Appl. No. 12/814,816 (19 pages).
Related Publications (1)
Number Date Country
20120145077 A1 Jun 2012 US