This application claims priority to and the benefit of Korean Patent Application No. 10-2010-0127090, filed on Dec. 13, 2010, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field
An aspect of embodiments according to the present invention relates to an organic layer deposition apparatus.
2. Description of the Related Art
Organic light-emitting display devices have a larger viewing angle, better contrast characteristics, and a faster response speed in comparison to other display devices; therefore, the organic light-emitting display devices have drawn attention as a next-generation display device.
In order to solve the problems of the contemporary deposition method using a fine metal mask (FMM), one or more aspects of embodiments according to the present invention provide an organic layer deposition apparatus that may be applied to simplify the production of large-sized display devices on a mass scale and that may be suitable for high-definition patterning.
According to an aspect of embodiments according to the present invention, there is provided an organic layer deposition apparatus for forming an organic layer on a substrate within a vacuum chamber, the apparatus including: a deposition source configured to discharge a deposition material; a deposition source nozzle unit located at a side of the deposition source, the deposition source nozzle unit including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet located opposite to the deposition source nozzle unit, patterning slit sheet having a plurality of patterning slits arranged in a second direction perpendicular to the first direction; and an interval measuring unit configured to measure an interval between the substrate and the patterning slit sheet, wherein the organic layer deposition apparatus is configured to perform deposition while the substrate or the organic layer deposition apparatus is moved relative to the other in the first direction at a distance from the other, and the interval measuring unit is in the vacuum chamber and is configured to measure an interval between the substrate moving in the first direction and the patterning slit sheet.
The deposition source, the deposition source nozzle unit, and the patterning slit sheet may be integrally formed as a single body.
The deposition source and the deposition source nozzle unit, and the patterning slit sheet may be integrally connected as a single body by a connection member for guiding movement of the deposition material.
The connection member may seal a space between the deposition source nozzle unit located at the side of the deposition source, and the patterning slit sheet.
The plurality of deposition source nozzles may be tilted at an angle with respect to a vertical line of a surface from which the deposition source nozzle is extruded.
The plurality of deposition source nozzles may include deposition source nozzles arranged in two rows formed in the first direction, and the deposition source nozzles in one of the two rows may be tilted to face towards the deposition source nozzles in the other one of the two rows.
The plurality of deposition source nozzles may include deposition source nozzles arranged in two rows formed in the first direction, the deposition source nozzles of one of the two rows located at a first side of the patterning slit sheet may be arranged to face towards a second side of the patterning slit sheet, and the deposition source nozzles of the other one of the two rows located at the second side of the patterning slit sheet may be arranged to face towards the first side of the patterning slit sheet.
The interval measuring unit may measure the interval between the substrate and the patterning slit sheet in a vacuum condition.
The interval measuring unit may be located above the substrate, and a sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate.
The interval measuring unit may sense the sensing pattern from the moving substrate and then may sense one surface of the patterning slit sheet to measure the interval between the substrate and the patterning slit sheet.
The sensing pattern may be formed of metal.
The interval measuring unit may be located below the patterning slit sheet, the sensing pattern to be sensed by the interval measuring unit may be located on one surface of the substrate, and the patterning slit sheet may have a through hole, and a sensing target configured to cover the through hole.
The sensing target and the sensing pattern may be formed of metal.
The interval measuring unit may sense the sensing target and then may sense the sensing pattern from the moving substrate through the through hole from which the sensing target has been removed, to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be a capacitive sensor or an Eddy-current sensor.
The interval measuring unit may be located above the substrate and may sense one surface of the substrate and one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be located below the patterning slit sheet, and the patterning slit sheet may have a through hole.
The interval measuring unit may sense one surface of the patterning slit sheet and may sense one surface of the substrate through the through hole so as to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be a confocal sensor.
According to another aspect of the present invention, there is provided an organic layer deposition apparatus for forming an organic layer on a substrate within a vacuum chamber, the apparatus including: a deposition source configured to discharge a deposition material; a deposition source nozzle unit located at a side of the deposition source, the deposition source nozzle unit including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet located opposite to the deposition source nozzle unit, the patterning slit sheet having a plurality of patterning slits arranged in the first direction; a barrier plate assembly comprising a plurality of barrier plates that are located between the deposition source nozzle unit and the patterning slit sheet in the first direction, and partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and an interval measuring unit configured to measure an interval between the substrate and the patterning slit sheet. The organic layer deposition apparatus and the substrate are separated from each other, the organic layer deposition apparatus or the substrate is configured to be moved relative to the other, and the interval measuring unit is located within the vacuum chamber and is configured to measure an interval between the substrate and the patterning slit sheet that are moved relative to each other.
The plurality of barrier plates may extend in a second direction substantially perpendicular to the first direction.
The barrier plate assembly may include a first barrier plate assembly including a plurality of first barrier plates, and a second barrier plate assembly including a plurality of second barrier plates.
Each of the first barrier plates and each of the second barrier plates may extend in a second direction substantially perpendicular to the first direction.
The first barrier plates may be arranged to respectively correspond to the second barrier plates.
The deposition source and the barrier plate assembly may be separated from each other.
The barrier plate assembly and the patterning slit sheet may be separated from each other.
The interval measuring unit may measure the interval between the substrate and the patterning slit sheet in a vacuum condition.
The interval measuring unit may be located above the substrate, and a sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate.
The interval measuring unit may sense the sensing pattern from the moving substrate and then may sense one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.
The sensing pattern may be formed of metal.
The interval measuring unit may be located below the patterning slit sheet, the sensing pattern to be sensed by the interval measuring unit may be on one surface of the substrate, and the patterning slit sheet may have a through hole, and a sensing target configured to cover the through hole.
The sensing target and the sensing pattern may be formed of metal.
The interval measuring unit may sense the sensing target and then may sense the sensing pattern from the moving substrate through the through hole from which the sensing target has been removed, to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be a capacitive sensor or an Eddy-current sensor.
The interval measuring unit may be located above the substrate and may sense one surface of the substrate and one surface of the patterning slit sheet so as to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be located below the patterning slit sheet, and the patterning slit sheet may have a through hole.
The interval measuring unit may sense one surface of the patterning slit sheet and may sense one surface of the substrate through the through hole so as to measure the interval between the substrate and the patterning slit sheet.
The interval measuring unit may be a confocal sensor.
The above and other features and aspects of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
One or more aspects of embodiments according to the present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.
An organic light-emitting display device includes intermediate layers, including an emission layer disposed between a first electrode and a second electrode that are arranged opposite to each other. The electrodes and the intermediate layers may be formed via various methods, one of which is a deposition method. When an organic light-emitting display device is manufactured by using the deposition method, a fine metal mask (FMM) having the same pattern as a thin film to be formed is disposed to closely contact a substrate, and a thin film material is deposited over the FMM in order to form the thin film having the desired pattern.
However, the deposition method using such a FMM is generally not suitable for manufacturing larger devices using a mother glass having a size of 5G (1100×1300 mm) or greater. In other words, when such a large mask is used, the mask may bend due to its own weight, thereby distorting a pattern. This is not conducive for the recent trend towards high-definition patterns.
Referring to
The loading unit 710 includes a first rack 712, a transport robot 714, a transport chamber 716, and a first inversion chamber 718.
A plurality of substrates 500 onto which a deposition material is not applied are stacked up on the first rack 712. The transport robot 714 picks up one of the substrates 500 from the first rack 712, places it on the electrostatic chuck 600 transferred by the second conveyor unit 620, and moves the electrostatic chuck 600 on which the substrate 500 is placed into the transport chamber 716.
The first inversion chamber 718 is located adjacent to the transport chamber 716. The first inversion chamber 718 includes a first inversion robot 719 that inverts the electrostatic chuck 600 and then loads it onto the first conveyer unit 610 of the deposition unit 730.
Referring to
The unloading unit 720 is constituted to operate in an opposite manner to the loading unit 710 described above. Specifically, a second inversion robot 729 in a second inversion chamber 728 inverts the electrostatic chuck 600, which has passed through the deposition unit 730 while the substrate 500 is placed on the electrostatic chuck 600, and then moves the electrostatic chuck 600 on which the substrate 500 is placed into an ejection chamber 726. Then, an ejection robot 724 removes the electrostatic chuck 600 on which the substrate 500 is placed from the ejection chamber 726, separates the substrate 500 from the electrostatic chuck 600, and then loads the substrate 500 onto the second rack 722. The electrostatic chuck 600 separated from the substrate 500 is returned back into the loading unit 710 via the second conveyer unit 620.
However, the present invention is not limited to the above description. For example, when placing the substrate 500 on the electrostatic chuck 600, the substrate 500 may be fixed onto a bottom surface of the electrostatic chuck 600 and then moved into the deposition unit 730. In this case, for example, the first inversion chamber 718 and the first inversion robot 719, and the second inversion chamber 728 and the second inversion robot 729 are not used.
The deposition unit 730 may include at least one deposition chamber. As illustrated in
In the organic layer deposition apparatus illustrated in
In the embodiment illustrated in
Referring to
For example, in order to deposit a deposition material 115 that is emitted from the deposition source 110 and is discharged through the deposition source nozzle unit 120 and the patterning slit sheet 150, onto a substrate 500 in a desired pattern, the chamber should be maintained in a high-vacuum state as in a deposition method using a fine metal mask (FMM). In addition, the temperature of the patterning slit sheet 150 should be sufficiently lower than the temperature of the deposition source 110. In this regard, the temperature of the patterning slit sheet 150 may be about 100° C. or less. The temperature of the patterning slit sheet 150 should be sufficiently low so as to reduce thermal expansion of the patterning slit sheet 150.
The substrate 500, which constitutes a deposition target on which the deposition material 115 is to be deposited, is located in the first chamber 731. The substrate 500 may be a substrate for flat panel displays. A large substrate, such as a mother glass, for manufacturing a plurality of flat panel displays, may be used as the substrate 500. Other substrates may also be employed.
In the current embodiment of the present invention, deposition may be performed while the substrate 500 or the organic layer deposition apparatus 100 is moved relative to the other.
In particular, in a typical FMM deposition method, the size of the FMM is generally equal to the size of a substrate. Thus, the size of the FMM is increased as the substrate becomes larger. However, it is neither straightforward to manufacture a large FMM nor to extend an FMM to be accurately aligned with a pattern.
In order to solve this problem, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, deposition may be performed while the organic layer deposition apparatus 100 or the substrate 500 is moved relative to the other. In other words, deposition may be continuously performed while the substrate 500, which is disposed such as to face the organic layer deposition apparatus 100, is moved in a Y-axis direction. In other words, deposition may be performed in a scanning manner while the substrate 500 is moved in a direction of arrow A in
In the organic layer deposition apparatus 100 according to the current embodiment of the present invention, the patterning slit sheet 150 may be significantly smaller than a FMM used in a conventional deposition method. In other words, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, deposition is continuously performed, i.e., in a scanning manner while the substrate 500 is moved in the Y-axis direction. Thus, lengths of the patterning slit sheet 150 in the X-axis and Y-axis directions may be less (e.g., significantly less) than the lengths of the substrate 500 in the X-axis and Y-axis directions. As described above, since the patterning slit sheet 150 may be formed to be smaller (e.g., significantly smaller) than a FMM used in a conventional deposition method, it is relatively easy to manufacture the patterning slit sheet 150 used in embodiments of the present invention. In other words, using the patterning slit sheet 150, which is smaller than a FMM used in a conventional deposition method, is more convenient in all processes, including etching and other subsequent processes, such as precise extension, welding, moving, and cleaning processes, compared to the conventional deposition method using the larger FMM. This is more advantageous for a relatively large display device.
The deposition source 110 that contains and heats the deposition material 115 is located at an opposite side of the chamber to a side at which the substrate 500 is located. While being vaporized in the deposition source 110, the deposition material 115 is deposited on the substrate 500.
For example, the deposition source 110 includes a crucible 112 that is filled with the deposition material 115, and a cooling block 111 that heats the crucible 112 to vaporize the deposition material 115, which is contained in the crucible 112, towards a side of the crucible 112, and in particular, towards the deposition source nozzle unit 120. The cooling block 111 prevents radiation of heat from the crucible 112 outside, i.e., into the first chamber 731. The cooling block 111 may include a heater (not shown) that heats the crucible 111.
The deposition source nozzle unit 120 is located at a side of the deposition source 110, and in particular, at the side of the deposition source 110 facing the substrate 500. The deposition source nozzle unit 120 includes a plurality of deposition source nozzles 121 arranged at equal intervals in the Y-axis direction, i.e., a scanning direction of the substrate 500. The deposition material 115 that is vaporized in the deposition source 110, passes through the deposition source nozzle unit 120 toward the substrate 500. As described above, when the deposition source nozzle unit 120 includes the plurality of deposition source nozzles 121 arranged in the Y-axis direction, that is, the scanning direction of the substrate 500, the size of a pattern formed of the deposition material discharged through the patterning slits 151 of the patterning slit sheet 150 is affected by the size of one of the deposition source nozzles 121 (since there is only one line of deposition nozzles in the X-axis direction), and thus no shadow zone may be formed on the substrate 500. In addition, since the plurality of deposition source nozzles 121 are arranged in the scanning direction of the substrate 500, even if there is a difference in flux between the deposition source nozzles 121, the difference may be compensated for and deposition uniformity may be maintained constant.
The patterning slit sheet 150 and a frame 155 in which the patterning slit sheet 150 is bound are located between the deposition source 110 and the substrate 500. The frame 155 may be formed in a lattice shape, similar to a window frame. The patterning slit sheet 150 is bound inside the frame 155. The patterning slit sheet 150 has a plurality of patterning slits 151 arranged in the X-axis direction. The deposition material 115 that is vaporized in the deposition source 110, passes through the deposition source nozzle unit 120 and the patterning slit sheet 150 toward the substrate 500. The patterning slit sheet 150 may be manufactured by etching, which is the same method as used in a typical method of manufacturing an FMM, and in particular, a striped FMM. In this regard, the total number of patterning slits 151 may be greater than the total number of deposition source nozzles 121.
In addition, the deposition source 110 and the deposition source nozzle unit 120 coupled to the deposition source 110 may be arranged to be separated from the patterning slit sheet 150 by a distance (e.g., a predetermined distance). Alternatively, the deposition source 110 and the deposition source nozzle unit 120 coupled to the deposition source 110 may be connected to the patterning slit sheet 150 by a connection member 135. That is, the deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 may be integrally formed as one body by being connected to each other via the first connection member 135. The first connection member 135 guides the deposition material 115, which is discharged through the deposition source nozzles 121, to move straight, not to flow in the X-axis direction. In
As described above, the organic layer deposition apparatus 100 according to the current embodiment of the present invention performs deposition while being moved relative to the substrate 500. In order to move the organic layer deposition apparatus 100 relative to the substrate 500, the patterning slit sheet 150 is separated from the substrate 500 by a distance (e.g., a predetermined distance).
In particular, in a typical deposition method using a FMM, deposition is performed with the FMM in close contact with a substrate in order to prevent formation of a shadow zone on the substrate. However, when the FMM is used in close contact with the substrate, the contact may cause defects. In addition, in the conventional deposition method, the size of the mask is the same as the size of the substrate since the mask cannot be moved relative to the substrate. Thus, the size of the mask is increased as display devices become larger. However, it is not easy to manufacture such a large mask.
In order to overcome this problem, in the organic layer deposition apparatus 100 according to the current embodiment of the present invention, the patterning slit sheet 150 is arranged to be separated from the substrate 500 by a distance (e.g., a predetermined distance).
As described above, according to embodiments of the present invention, a mask is formed to be smaller than a substrate, and deposition is performed while the mask is moved relative to the substrate. Thus, the mask can be easily manufactured. In addition, defects caused due to the contact between a substrate and a FMM, which may occur in the conventional deposition method, may be prevented. Furthermore, since it is unnecessary to arrange the FMM in close contact with the substrate during a deposition process, the manufacturing time may be reduced.
The interval measuring unit 161 measures an interval between the substrate 50 and the patterning slit sheet 150. In more detail, while the substrate 500 is moving in the first direction (Y-axis direction) at a distance (e.g., a predetermined distance) from the patterning slit sheet 150, an organic layer is formed on the substrate 500. The interval measuring unit 161 may measure the interval between the substrate 500 and the patterning slit sheet 150 while the substrate 500 is moving. In particular, the interval measuring unit 161 may be located within the first chamber 731 of
The interval measuring unit 161 may achieve more accurate measurement since the interval measuring unit 161 can measure the interval between the substrate 500 and the patterning slit sheet 150 within the first chamber 731, which is in a vacuum condition. The interval measuring unit 161 may also increase deposition uniformity since the interval measuring unit 161 may measure in real time the interval (or gap) between the substrate 500 that is moving during a deposition process, and the patterning slit sheet 150. While not shown specifically in
Referring to
The capacitive sensor may sense flow of free electrons, which constitute a measurement target, to measure a distance to the measurement target. The sensing pattern 502 may be formed of metal. Accordingly, when the capacitive sensor is used as the interval measuring unit 161, the capacitive sensor may measure the distance t1 from the interval measuring unit 161 to the substrate 500 by sensing the sensing pattern 502, and may measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150 by sensing the patterning slit sheet 150, which is formed of metal.
The Eddy-current sensor may sense an Eddy current on a surface of the measurement target to measure a distance to the measurement target. Accordingly, when the Eddy current sensor is used as the interval measuring unit 161, the Eddy current sensor may measure the distance t1 from the interval measuring unit 161 to the substrate 500 by sensing the sensing pattern 502, and may measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150 by sensing the patterning slit sheet 150, which is formed of metal.
The organic layer deposition apparatus 100′ of
The components of the organic layer deposition apparatus 100′ of
Referring to
In more detail, referring to
The sensing target 153 and the sensing pattern 502 may be all formed of metal. Accordingly, the capacitive sensor or the Eddy-current sensor may sense the sensing target 153 or the sensing pattern 502 so as to measure the distance t2 from the interval measuring unit 161 to the patterning slit sheet 150′ or the distance t1 from the interval measuring unit 161 to the substrate 500.
The interval measuring unit 161″ of
Referring to
In other words, referring to
In particular, the organic layer deposition apparatus according to the current embodiment of the present invention includes the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300. Since each of the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300 has the same structure as the organic layer deposition apparatus described with reference to
The deposition sources 110 of the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200 and the third organic layer deposition apparatus 300 may contain different deposition materials, respectively. The first organic layer deposition apparatus 100 may contain a deposition material used to form the R emission layer, the second organic layer deposition apparatus 200 may contain a deposition material used to form the G emission layer, and the third organic layer deposition apparatus 300 may contain a deposition material used to form the B emission layer.
In other words, in a conventional method of manufacturing an organic light-emitting display device, a separate chamber and mask are used to form each color emission layer. However, when the organic layer deposition apparatus according to the current embodiment of the present invention is used, the R emission layer, the G emission layer and the B emission layer may be formed concurrently (e.g., at the same time) with a single multi-deposition source. Thus, the time it takes to manufacture the organic light-emitting display device may be reduced (e.g., sharply reduced). In addition, the organic light-emitting display device may be manufactured with a reduced number of chambers, so that equipment costs may be also reduced (e.g., markedly reduced).
Although not illustrated in detail, a patterning slit sheet of the first organic layer deposition apparatus 100, a patterning slit sheet of the second organic layer deposition apparatus 200, and a patterning slit sheet of the third organic layer deposition apparatus 300 may be arranged to be offset by a constant distance with respect to each other, in order for deposition regions corresponding to the patterning slit sheets not to overlap on the substrate 500. In other words, when the first organic layer deposition apparatus 100, the second organic layer deposition apparatus 200, and the third organic layer deposition apparatus 300 are used to deposit the R emission layer, the G emission layer, and the B emission layer, respectively, patterning slits 151 of the first organic layer deposition apparatus 100, patterning slits 251 of the second organic layer deposition apparatus 200, and patterning slits 351 of the third organic layer deposition apparatus 300 are arranged not to be aligned with respect to each other, in order to form the R emission layer, the G emission layer and the B emission layer in different regions of the substrate 500.
In addition, the deposition materials used to form the R emission layer, the G emission layer, and the B emission layer may have different deposition temperatures. Therefore, the temperatures of the deposition sources of the respective first, second, and third organic layer deposition assemblies 100, 200, and 300 may be set to be different.
Although
As described above, a plurality of thin films may be formed concurrently (e.g., at the same time) with a plurality of organic layer deposition apparatuses, and thus manufacturing yield and deposition efficiency may be improved. In addition, the overall manufacturing process may be simplified, and the manufacturing cost may be reduced.
Referring to
Although a chamber is not illustrated in
In the chamber 731 of
In an embodiment, the substrate 500 or the organic layer deposition apparatus 100″ may be moved relative to the other. For example, as illustrated in
Similar to the embodiment described above with reference to
As described above, since the patterning slit sheet 150 may be formed to be smaller (e.g., significantly smaller) than a FMM used in a conventional deposition method, it is relatively easy to manufacture the patterning slit sheet 150 used in embodiments of the present invention. In other words, using the patterning slit sheet 150, which is smaller than a FMM used in a conventional deposition method, is more convenient in all processes, including etching and other subsequent processes, such as precise extension, welding, moving, and cleaning processes, compared to the conventional deposition method using the larger FMM. This is more advantageous for a relatively large display device.
The deposition source 110 that contains and heats the deposition material 115 is located at an opposite side of the first chamber to a side at which the substrate 500 is located.
The deposition source 110 includes a crucible 112 that is filled with the deposition material 115, and a cooling block 111 surrounding the crucible 112. The cooling block 111 prevents radiation of heat from the crucible 112 outside, e.g., into the first chamber. The cooling block 111 may include a heater (not shown) that heats the crucible 112.
The deposition source nozzle unit 120′ is located at a side of the deposition source 110, and in particular, at the side of the deposition source 110 facing the substrate 500. The deposition source nozzle unit 120′ includes a plurality of deposition source nozzles 121′ arranged at equal intervals in the X-axis direction. The deposition material 115 that is vaporized in the deposition source 110 passes through the deposition source nozzles 121′ of the deposition source nozzle unit 120′ toward the substrate 500, which constitutes a target on which the deposition material 115 is to be deposited.
The barrier plate assembly 130 is disposed at a side of the deposition source nozzle unit 120′. The barrier plate assembly 130 includes a plurality of barrier plates 131, and a barrier plate frame 132 that covers sides of the barrier plates 131. The plurality of barrier plates 131 may be arranged parallel to each other at equal intervals in the X-axis direction. In addition, each of the barrier plates 131 may be arranged parallel to an YZ plane in
The barrier plates 131 may be respectively located between adjacent deposition source nozzles 121′. In other words, each of the deposition source nozzles 121′ may be located between two adjacent barrier plates 131. The deposition source nozzles 121′ may be respectively located at the midpoint between two adjacent barrier plates 131. However, the present invention is not limited to this structure. For example, a plurality of deposition source nozzles 121′ may be located between two adjacent barrier plates 131. In this case, the deposition source nozzles 121′ may be also respectively located at the midpoint between two adjacent barrier plates 131.
As described above, since the barrier plates 131 partition the space between the deposition source nozzle unit 120′ and the patterning slit sheet 150 into the plurality of sub-deposition spaces S, the deposition material 115 discharged through each of the deposition source nozzles 121′ is not mixed with the deposition material 115 discharged through the other deposition source nozzles 121′, and passes through the patterning slits 151 so as to be deposited on the substrate 500. In other words, the barrier plates 131 guide the deposition material 115, which is discharged through the deposition source nozzles 121′, to move straight, not to flow in the X-axis direction.
As described above, the deposition material 115 is forced to move straight by installing the barrier plates 131, so that a smaller shadow zone may be formed on the substrate 500 compared to a case where no barrier plates are installed. Thus, the organic layer deposition apparatus 100″ and the substrate 500 can be separated from each other by a distance (e.g., a predetermined distance). This will be described later in detail.
The barrier plate frame 132, which forms sides of the barrier plates 131, maintains the positions of the barrier plates 131, and guides the deposition material 115, which is discharged through the deposition source nozzles 121′, not to flow in the Y-axis direction. The barrier plate frame 132 in the embodiment of
The deposition source nozzle unit 120′ and the barrier plate assembly 130 may be separated from each other by a distance (e.g., a predetermined distance). This may prevent the heat radiated from the deposition source unit 110 from being conducted to the barrier plate assembly 130. However, aspects of the present invention are not limited to this. For example, an appropriate heat insulator (not shown) may be further located between the deposition source nozzle unit 120′ and the barrier plate assembly 130. In this case, the deposition source nozzle unit 120′ and the barrier plate assembly 130 may be bound together with the heat insulator therebetween.
In addition, the barrier plate assembly 130 may be constructed to be detachable from the organic layer deposition apparatus 100″. In the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the deposition space is enclosed by using the barrier plate assembly 130, so that the deposition material 115 that remains undeposited is mostly deposited within the barrier plate assembly 130. Thus, since the barrier plate assembly 130 is constructed to be detachable from the organic layer deposition apparatus 100″, when a large amount of the deposition material 115 lies in the barrier plate assembly 130 after a long deposition process, the barrier plate assembly 130 may be detached from the organic layer deposition apparatus 100″ and then placed in a separate deposition material recycling apparatus in order to recover the deposition material 115. Due to the structure of the organic layer deposition apparatus 100″ according to the present embodiment, a reuse rate of the deposition material 115 may be increased, so that the deposition efficiency may be improved, and thus the manufacturing cost may be reduced.
The patterning slit sheet 150 and a frame 155 in which the patterning slit sheet 150 is bound are located between the deposition source 110 and the substrate 500. The frame 155 may be formed in a lattice shape, similar to a window frame. The patterning slit sheet 150 is bound inside the frame 155. The patterning slit sheet 150 has a plurality of patterning slits 151 arranged in the X-axis direction. Each of the patterning slits 151 extends in the Y-axis direction. The deposition material 115 that has been vaporized in the deposition source 110 and passed through the deposition source nozzle 121′ passes through the patterning slits 151 toward the substrate 500.
The patterning slit sheet 150 may be formed of a metal thin film. The patterning slit sheet 150 is fixed to the frame 155 such that a tensile force is exerted thereon. In other words, the patterning frame 155 may exert a stretching force to the patterning slit sheet 150 towards the periphery of the patterning slit sheet 150. The patterning slits 151 may be formed by etching the patterning slit sheet 150 to have a stripe pattern.
In the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the total number of patterning slits 151 may be greater than the total number of deposition source nozzles 121′. In addition, there may be a greater number of patterning slits 151 than deposition source nozzles 121′ located between two adjacent barrier plates 131. The number of patterning slits 151 may be equal to the number of deposition patterns to be formed on the substrate 500.
In addition, the barrier plate assembly 130 and the patterning slit sheet 150 may be arranged to be separated from each other by a distance (e.g., a predetermined distance). Alternatively, the barrier plate assembly 130 and the patterning slit sheet 150 may be connected by a second connection member 133. The temperature of the barrier plate assembly 130 may increase to 100° C. or higher due to the deposition source 110 whose temperature is high. Thus, in order to prevent the heat of the barrier plate assembly 130 from being conducted to the patterning slit sheet 150, the barrier plate assembly 130 and the patterning slit sheet 150 are separated from each other by a distance (e.g., a predetermined distance).
As described above, the organic layer deposition apparatus 100″ according to the current embodiment of the present invention performs deposition while being moved relative to the substrate 500. In order to move the organic layer deposition apparatus 100″ relative to the substrate 500, the patterning slit sheet 150 is separated from the substrate 500 by a distance (e.g., a predetermined distance). In addition, in order to prevent the formation of a relatively large shadow zone on the substrate 500 when the patterning slit sheet 150 and the substrate 500 are separated from each other, the barrier plates 131 are arranged between the deposition source nozzle unit 120′ and the patterning slit sheet 150 to force the deposition material 115 to move in a straight direction. Thus, the size of the shadow zone that may be formed on the substrate 500 may be reduced (e.g., sharply reduced).
In a conventional deposition method using a FMM, deposition is performed with the FMM in close contact with a substrate in order to prevent formation of a shadow zone on the substrate. However, when the FMM is used in close contact with the substrate, the contact may cause defects, such as scratches on patterns formed on the substrate. In addition, in the conventional deposition method, the size of the mask is the same as the size of the substrate since the mask cannot be moved relative to the substrate. Thus, the size of the mask is increased as display devices become larger. However, it is not easy to manufacture such a large mask.
In order to overcome this problem, in the organic layer deposition apparatus 100″ according to the current embodiment of the present invention, the patterning slit sheet 150 is arranged to be separated from the substrate 500 by a distance (e.g., a predetermined distance). This may be facilitated by installing the barrier plates 131 to reduce the size of the shadow zone formed on the substrate 500.
As described above, when the patterning slit sheet 150 is manufactured to be smaller than the substrate 500, the patterning slit sheet 150 may be moved relative to the substrate 500 during deposition. Thus, it is no longer necessary to manufacture a large FMM as used in the conventional deposition method. In addition, since the substrate 500 and the patterning slit sheet 150 are separated from each other, defects caused due to contact therebetween may be prevented. In addition, since it is unnecessary to contact the substrate 500 with the patterning slit sheet 150 during a deposition process, the manufacturing speed may be improved.
Referring to
Although a chamber is not illustrated in
The substrate 500, which constitutes a deposition target on which a deposition material 115 is to be deposited, is located in the chamber. The deposition source 115 that contains and heats the deposition material 110 is located at an opposite side of the chamber to that at which the substrate 500 is located.
Structures of the deposition source 110 and the patterning slit sheet 150 are substantially the same as those in the embodiment described with reference to
The second barrier plate assembly 140 is located at a side of the first barrier plate assembly 130. The second barrier plate assembly 140 includes a plurality of second barrier plates 141, and a second barrier plate frame 142 that covers sides of the second barrier plates 141. The second barrier wall frame 142 may be frame shaped to surround the plurality of second barrier plates 141. A schematic cutaway view of the second barrier wall frame 142 is shown for convenience of illustration.
The plurality of second barrier plates 141 may be arranged parallel to each other at equal intervals in the X-axis direction. In addition, each of the second barrier plates 141 may be formed to extend in the YZ plane in
The plurality of first barrier plates 131 and the second barrier plates 141 arranged as described above partition the space between the deposition source nozzle unit 120 and the patterning slit sheet 150. The deposition space is divided by the first barrier plates 131 and the second barrier plates 141 into sub-deposition spaces that respectively correspond to the deposition source nozzles 121″ through which the deposition material 115 is discharged.
The second barrier plates 141 may be arranged to correspond respectively to the first barrier plates 131. The second barrier plates 141 may be respectively aligned with the first barrier plates 131 to be parallel thereto on the same plane as the first barrier plates 131. Each pair of the corresponding first and second barrier plates 131 and 141 may be located on the same plane. Although the first barrier plates 131 and the second barrier plates 141 are respectively illustrated as having the same thickness in the X-axis direction, aspects of the present invention are not limited thereto. In other words, the second barrier plates 141, which need to be accurately aligned with the patterning slits 151, may be formed to be relatively thin, whereas the first barrier plates 131, which do not need to be precisely aligned with the patterning slits 151, may be formed to be relatively thick. This makes it easier to manufacture the organic layer deposition apparatus.
As illustrated in
Referring to
A thin film transistor (TFT) 40, a capacitor 50, and an organic light-emitting diode (OLED) 60 are located on the insulating layer 31, as illustrated in
A semiconductor active layer 41 is formed on an upper surface of the insulating layer 31 in a predetermined pattern. A gate insulating layer 32 is formed to cover the semiconductor active layer 41. The active layer 41 may include a p-type or n-type semiconductor material.
A gate electrode 42 of the TFT 40 is formed in a region of the gate insulating layer 32 corresponding to the active layer 41. An interlayer insulating layer 33 is formed to cover the gate electrode 42. The interlayer insulating layer 33 and the gate insulating layer 32 are etched by, for example, dry etching, to form a contact hole exposing parts of the active layer 41.
A source/drain electrode 43 is formed on the interlayer insulating layer 33 to contact the active layer 41 through the contact hole. A passivation layer 34 is formed to cover the source/drain electrode 43, and is etched to expose a part of the drain electrode 43. An insulating layer (not shown) may be further formed on the passivation layer 34 so as to planarize the passivation layer 34.
In addition, the OLED 60 displays image information (e.g., predetermined image information) by emitting red, green, or blue light as current flows. The OLED 60 includes a first electrode 61 located on the passivation layer 34. The first electrode 61 is electrically connected to the drain electrode 43 of the TFT 40.
A pixel defining layer 35 is formed to cover the first electrode 61. An opening 64 is formed in the pixel defining layer 35, and then an organic emission layer 63 is formed in a region defined by the opening 64. A second electrode 62 is formed on the organic emission layer 63.
The pixel defining layer 35, which defines individual pixels, is formed of an organic material. The pixel defining layer 35 also planarizes the surface of a region of the substrate 30 where the first electrode 61 is formed, and in particular, the surface of the passivation layer 34.
The first electrode 61 and the second electrode 62 are insulated from each other, and respectively apply voltages of opposite polarities to the organic emission layer 63 to induce light emission.
The organic emission layer 63 may be formed of a low-molecular weight organic material or a high-molecular weight organic material. When a low-molecular weight organic material is used, the organic emission layer 63 may have a single or multi-layer structure including at least one selected from the group consisting of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL). Examples of available organic materials may include copper phthalocyanine (CuPc), N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), and the like.
After the organic emission layer 63 is formed, the second electrode 62 may be formed by the same deposition method as used to form the organic emission layer 63.
The first electrode 61 may function as an anode, and the second electrode 62 may function as a cathode. Alternatively, the first electrode 61 may function as a cathode, and the second electrode 62 may function as an anode. The first electrode 61 may be patterned to correspond to individual pixel regions, and the second electrode 62 may be formed to cover all the pixels.
The first electrode 61 may be formed as a transparent electrode or a reflective electrode. Such a transparent electrode may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3). Such a reflective electrode may be formed by forming a reflective layer from silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof and forming a layer of ITO, IZO, ZnO, or In2O3 on the reflective layer. The first electrode 61 may be formed by forming a layer by, for example, sputtering, and then patterning the layer by, for example, photolithography.
The second electrode 62 may also be formed as a transparent electrode or a reflective electrode. When the second electrode 62 is formed as a transparent electrode, the second electrode 62 functions as a cathode. To this end, such a transparent electrode may be formed by depositing a metal having a low work function, such as lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg), or a compound thereof on a surface of the intermediate layer 63 and forming an auxiliary electrode layer or a bus electrode line thereon from ITO, IZO, ZnO, In2O3, or the like. When the second electrode 62 is formed as a reflective electrode, the reflective layer may be formed by depositing Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or a compound thereof on the entire surface of the organic emission layer 63. The second electrode 62 may be formed by using the same deposition method as used to form the organic emission layer 63 described above.
As described above, the organic layer deposition apparatus according to aspects of the present invention may be easily manufactured and may be simply applied to the manufacture of large-sized display devices on a mass scale. The organic layer deposition apparatus may improve manufacturing yield and deposition efficiency and may allow deposition materials to be reused.
The organic layer deposition apparatuses according to the embodiments of the present invention described above may be applied to form an organic layer or an inorganic layer of an organic TFT, and to form layers from various materials. For example, any suitable one of the thin film deposition apparatuses 100 (
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims and their equivalents.
Number | Date | Country | Kind |
---|---|---|---|
10-2010-0127090 | Dec 2010 | KR | national |
Number | Name | Date | Kind |
---|---|---|---|
4416217 | Nakamura et al. | Nov 1983 | A |
4468648 | Uchikune | Aug 1984 | A |
4687939 | Miyauchi et al. | Aug 1987 | A |
4792378 | Rose et al. | Dec 1988 | A |
4901667 | Suzuki et al. | Feb 1990 | A |
5454847 | Jacoboni et al. | Oct 1995 | A |
5460654 | Kikkawa et al. | Oct 1995 | A |
5487609 | Asada | Jan 1996 | A |
5742129 | Nagayama et al. | Apr 1998 | A |
5909995 | Wolf et al. | Jun 1999 | A |
6045671 | Wu et al. | Apr 2000 | A |
6091195 | Forrest et al. | Jul 2000 | A |
6099649 | Schmitt et al. | Aug 2000 | A |
6274198 | Dautartas | Aug 2001 | B1 |
6280821 | Kadunce et al. | Aug 2001 | B1 |
6371451 | Choi | Apr 2002 | B1 |
6417034 | Kitazume et al. | Jul 2002 | B2 |
6443597 | Natori | Sep 2002 | B1 |
6483690 | Nakajima et al. | Nov 2002 | B1 |
6541130 | Fukuda | Apr 2003 | B2 |
6554969 | Chong | Apr 2003 | B1 |
6579422 | Kakinuma | Jun 2003 | B1 |
6589673 | Kido et al. | Jul 2003 | B1 |
6650023 | Kim | Nov 2003 | B2 |
6699324 | Berdin et al. | Mar 2004 | B1 |
6749906 | Van Slyke | Jun 2004 | B2 |
6776847 | Yamazaki et al. | Aug 2004 | B2 |
6837939 | Klug et al. | Jan 2005 | B1 |
6878209 | Himeshima et al. | Apr 2005 | B2 |
6946783 | Kim | Sep 2005 | B2 |
6995035 | Cok et al. | Feb 2006 | B2 |
7006202 | Byun et al. | Feb 2006 | B2 |
RE39024 | Takahashi | Mar 2006 | E |
7078070 | Peng | Jul 2006 | B2 |
7199520 | Fujii et al. | Apr 2007 | B2 |
7282855 | Park et al. | Oct 2007 | B2 |
7322248 | Long | Jan 2008 | B1 |
7495389 | Noguchi et al. | Feb 2009 | B2 |
7601439 | Chun et al. | Oct 2009 | B2 |
7776457 | Lee et al. | Aug 2010 | B2 |
7872256 | Sung et al. | Jan 2011 | B2 |
7910386 | Shiang et al. | Mar 2011 | B2 |
7964037 | Fukuda et al. | Jun 2011 | B2 |
8022448 | Luu et al. | Sep 2011 | B1 |
8128753 | Bulovic et al. | Mar 2012 | B2 |
8137466 | Kang et al. | Mar 2012 | B2 |
8188476 | Takagi et al. | May 2012 | B2 |
8193011 | Kang et al. | Jun 2012 | B2 |
20010004186 | Song et al. | Jun 2001 | A1 |
20010006827 | Yamazaki et al. | Jul 2001 | A1 |
20010019807 | Yamada et al. | Sep 2001 | A1 |
20010026638 | Sangu et al. | Oct 2001 | A1 |
20010034175 | Miyazaki et al. | Oct 2001 | A1 |
20020011785 | Tang et al. | Jan 2002 | A1 |
20020017245 | Tsubaki et al. | Feb 2002 | A1 |
20020033136 | Savage et al. | Mar 2002 | A1 |
20020036759 | Ise et al. | Mar 2002 | A1 |
20020050061 | Komyoji et al. | May 2002 | A1 |
20020076847 | Yamada et al. | Jun 2002 | A1 |
20020168577 | Yoon | Nov 2002 | A1 |
20020179013 | Kido et al. | Dec 2002 | A1 |
20020187253 | Marcus et al. | Dec 2002 | A1 |
20020194727 | Cho et al. | Dec 2002 | A1 |
20020197393 | Kuwabara | Dec 2002 | A1 |
20030021886 | Baele | Jan 2003 | A1 |
20030101932 | Kang | Jun 2003 | A1 |
20030101937 | Van Slyke et al. | Jun 2003 | A1 |
20030117602 | Kobayashi et al. | Jun 2003 | A1 |
20030118950 | Chao et al. | Jun 2003 | A1 |
20030124764 | Yamazaki et al. | Jul 2003 | A1 |
20030151637 | Nakamura et al. | Aug 2003 | A1 |
20030164934 | Nishi et al. | Sep 2003 | A1 |
20030168013 | Freeman et al. | Sep 2003 | A1 |
20030173896 | Grushin et al. | Sep 2003 | A1 |
20030221614 | Kang et al. | Dec 2003 | A1 |
20030221620 | Yamazaki | Dec 2003 | A1 |
20030232563 | Kamiyama et al. | Dec 2003 | A1 |
20040016907 | Shi | Jan 2004 | A1 |
20040029028 | Shimizu | Feb 2004 | A1 |
20040056244 | Marcus et al. | Mar 2004 | A1 |
20040086639 | Grantham et al. | May 2004 | A1 |
20040096771 | Kashiwagi et al. | May 2004 | A1 |
20040115338 | Yoneda | Jun 2004 | A1 |
20040115342 | Shigemura | Jun 2004 | A1 |
20040123804 | Yamazaki et al. | Jul 2004 | A1 |
20040127066 | Jung | Jul 2004 | A1 |
20040134428 | Sasaki et al. | Jul 2004 | A1 |
20040142108 | Atobe et al. | Jul 2004 | A1 |
20040144321 | Grace et al. | Jul 2004 | A1 |
20040157167 | Morii | Aug 2004 | A1 |
20040183435 | Ohshita | Sep 2004 | A1 |
20040194702 | Sasaki et al. | Oct 2004 | A1 |
20040195530 | Kwak et al. | Oct 2004 | A1 |
20040216673 | Sakata et al. | Nov 2004 | A1 |
20040255857 | Chow et al. | Dec 2004 | A1 |
20040263547 | Sugahara | Dec 2004 | A1 |
20040263771 | Jeong et al. | Dec 2004 | A1 |
20050001546 | Yamaguchi | Jan 2005 | A1 |
20050016461 | Klug et al. | Jan 2005 | A1 |
20050031836 | Hirai | Feb 2005 | A1 |
20050037136 | Yamamoto | Feb 2005 | A1 |
20050039684 | Yi et al. | Feb 2005 | A1 |
20050072359 | Kim | Apr 2005 | A1 |
20050072361 | Yang et al. | Apr 2005 | A1 |
20050079418 | Kelley et al. | Apr 2005 | A1 |
20050110400 | Nakamura | May 2005 | A1 |
20050129489 | Quan et al. | Jun 2005 | A1 |
20050153472 | Yotsuya | Jul 2005 | A1 |
20050166842 | Sakamoto | Aug 2005 | A1 |
20050166844 | Gralenski | Aug 2005 | A1 |
20050183670 | Grantham et al. | Aug 2005 | A1 |
20050186330 | Kim et al. | Aug 2005 | A1 |
20050213021 | Myoung | Sep 2005 | A1 |
20050217584 | Abiko et al. | Oct 2005 | A1 |
20050229848 | Shinriki et al. | Oct 2005 | A1 |
20050244580 | Cok et al. | Nov 2005 | A1 |
20050263074 | Masuda et al. | Dec 2005 | A1 |
20060011136 | Yamazaki et al. | Jan 2006 | A1 |
20060012771 | Jeong | Jan 2006 | A1 |
20060022590 | Aziz et al. | Feb 2006 | A1 |
20060040132 | Liao et al. | Feb 2006 | A1 |
20060045958 | Abiko et al. | Mar 2006 | A1 |
20060066231 | Nishikawa et al. | Mar 2006 | A1 |
20060090705 | Kim | May 2006 | A1 |
20060102078 | Fairbairn et al. | May 2006 | A1 |
20060110544 | Kim et al. | May 2006 | A1 |
20060113907 | Im et al. | Jun 2006 | A1 |
20060115585 | Bulovic et al. | Jun 2006 | A1 |
20060130766 | Kim et al. | Jun 2006 | A1 |
20060144325 | Jung et al. | Jul 2006 | A1 |
20060152641 | Brody | Jul 2006 | A1 |
20060164786 | Kobayashi et al. | Jul 2006 | A1 |
20060169211 | Kim et al. | Aug 2006 | A1 |
20060174829 | An et al. | Aug 2006 | A1 |
20060205101 | Lee et al. | Sep 2006 | A1 |
20060244696 | Jung et al. | Nov 2006 | A1 |
20060267294 | Busse et al. | Nov 2006 | A1 |
20060269671 | Kim et al. | Nov 2006 | A1 |
20060272572 | Uematsu et al. | Dec 2006 | A1 |
20060278522 | Kim et al. | Dec 2006 | A1 |
20060278945 | Sakurai | Dec 2006 | A1 |
20060280588 | Blonigan et al. | Dec 2006 | A1 |
20070009552 | Whitehead et al. | Jan 2007 | A1 |
20070009652 | Manz et al. | Jan 2007 | A1 |
20070017445 | Takehara et al. | Jan 2007 | A1 |
20070022955 | Bender et al. | Feb 2007 | A1 |
20070024185 | Kitamura et al. | Feb 2007 | A1 |
20070046185 | Kim | Mar 2007 | A1 |
20070046913 | Shibazaki | Mar 2007 | A1 |
20070054044 | Shimosaki et al. | Mar 2007 | A1 |
20070075955 | Jung et al. | Apr 2007 | A1 |
20070077358 | Jeong et al. | Apr 2007 | A1 |
20070148337 | Nichols et al. | Jun 2007 | A1 |
20070148348 | Huh et al. | Jun 2007 | A1 |
20070157879 | Yotsuya | Jul 2007 | A1 |
20070158471 | Park et al. | Jul 2007 | A1 |
20070163497 | Grace et al. | Jul 2007 | A1 |
20070178708 | Ukigaya | Aug 2007 | A1 |
20070190235 | Yamazaki et al. | Aug 2007 | A1 |
20070195844 | Ma et al. | Aug 2007 | A1 |
20070231460 | Ukigaya | Oct 2007 | A1 |
20070275497 | Kwack et al. | Nov 2007 | A1 |
20070297887 | Tanaka | Dec 2007 | A1 |
20080018236 | Arai et al. | Jan 2008 | A1 |
20080038935 | Baude et al. | Feb 2008 | A1 |
20080057183 | Spindler et al. | Mar 2008 | A1 |
20080100204 | Kim | May 2008 | A1 |
20080115729 | Oda et al. | May 2008 | A1 |
20080118743 | Lee et al. | May 2008 | A1 |
20080129194 | Abe et al. | Jun 2008 | A1 |
20080131587 | Boroson et al. | Jun 2008 | A1 |
20080145521 | Guo et al. | Jun 2008 | A1 |
20080174235 | Kim et al. | Jul 2008 | A1 |
20080216741 | Ling et al. | Sep 2008 | A1 |
20080238294 | Xu et al. | Oct 2008 | A1 |
20080251785 | Noh et al. | Oct 2008 | A1 |
20080286461 | Noguchi et al. | Nov 2008 | A1 |
20080298947 | Yeo et al. | Dec 2008 | A1 |
20080309718 | Oya et al. | Dec 2008 | A1 |
20090001882 | Park et al. | Jan 2009 | A1 |
20090014412 | Nozawa et al. | Jan 2009 | A1 |
20090017192 | Matsuura | Jan 2009 | A1 |
20090124033 | Moriyama | May 2009 | A1 |
20090133629 | Kamikawa et al. | May 2009 | A1 |
20090153033 | Lee et al. | Jun 2009 | A1 |
20090165713 | Kim et al. | Jul 2009 | A1 |
20090169868 | Haglund, Jr. et al. | Jul 2009 | A1 |
20090170230 | Kidu et al. | Jul 2009 | A1 |
20090181163 | Uetake | Jul 2009 | A1 |
20090208754 | Chu et al. | Aug 2009 | A1 |
20090220691 | Kim | Sep 2009 | A1 |
20090229524 | Kim et al. | Sep 2009 | A1 |
20090232976 | Yoon et al. | Sep 2009 | A1 |
20090269881 | Furuta et al. | Oct 2009 | A1 |
20090277386 | Takagi et al. | Nov 2009 | A1 |
20090279173 | Chui et al. | Nov 2009 | A1 |
20090302750 | Jun et al. | Dec 2009 | A1 |
20090304906 | Suduo et al. | Dec 2009 | A1 |
20090304924 | Gadgil | Dec 2009 | A1 |
20090308317 | Sone et al. | Dec 2009 | A1 |
20090315456 | Furukawa et al. | Dec 2009 | A1 |
20100001301 | Karg et al. | Jan 2010 | A1 |
20100055810 | Sung et al. | Mar 2010 | A1 |
20100086672 | Von Drasek et al. | Apr 2010 | A1 |
20100089443 | Bloomstein et al. | Apr 2010 | A1 |
20100090594 | Choi et al. | Apr 2010 | A1 |
20100130020 | Kim et al. | May 2010 | A1 |
20100156279 | Tamura et al. | Jun 2010 | A1 |
20100165454 | Suetsugu et al. | Jul 2010 | A1 |
20100170439 | Negishi | Jul 2010 | A1 |
20100192856 | Sung et al. | Aug 2010 | A1 |
20100196607 | Carlson et al. | Aug 2010 | A1 |
20100255198 | Cleary et al. | Oct 2010 | A1 |
20100271602 | Hanazaki | Oct 2010 | A1 |
20100275842 | Park et al. | Nov 2010 | A1 |
20100297348 | Lee et al. | Nov 2010 | A1 |
20100297349 | Lee et al. | Nov 2010 | A1 |
20100310768 | Lee et al. | Dec 2010 | A1 |
20100328197 | Lee et al. | Dec 2010 | A1 |
20100330265 | Lee et al. | Dec 2010 | A1 |
20100330712 | Lee et al. | Dec 2010 | A1 |
20110033619 | Lee et al. | Feb 2011 | A1 |
20110033621 | Lee et al. | Feb 2011 | A1 |
20110042659 | Kim et al. | Feb 2011 | A1 |
20110045617 | Kang et al. | Feb 2011 | A1 |
20110048320 | Choi et al. | Mar 2011 | A1 |
20110052791 | Jo et al. | Mar 2011 | A1 |
20110052795 | Choi et al. | Mar 2011 | A1 |
20110053296 | Lee et al. | Mar 2011 | A1 |
20110053300 | Ryu et al. | Mar 2011 | A1 |
20110068331 | Koh et al. | Mar 2011 | A1 |
20110123707 | Lee et al. | May 2011 | A1 |
20110165327 | Park et al. | Jul 2011 | A1 |
20110168986 | Lee et al. | Jul 2011 | A1 |
20110220019 | Lee et al. | Sep 2011 | A1 |
20110241438 | Kim et al. | Oct 2011 | A1 |
20110262625 | Park et al. | Oct 2011 | A1 |
20110266944 | Song et al. | Nov 2011 | A1 |
20120009328 | Ryu et al. | Jan 2012 | A1 |
20120009332 | Kim et al. | Jan 2012 | A1 |
20120009706 | Choi et al. | Jan 2012 | A1 |
20120028390 | Lee et al. | Feb 2012 | A1 |
20120068199 | Sung et al. | Mar 2012 | A1 |
20120068201 | Sung et al. | Mar 2012 | A1 |
20120070928 | Kim et al. | Mar 2012 | A1 |
20120083061 | Kang et al. | Apr 2012 | A1 |
20120097992 | Jeong | Apr 2012 | A1 |
20120100282 | Lee et al. | Apr 2012 | A1 |
20120103253 | Park et al. | May 2012 | A1 |
20120132137 | Oh et al. | May 2012 | A1 |
20120145077 | Chang et al. | Jun 2012 | A1 |
20120148743 | Bulovic et al. | Jun 2012 | A1 |
20120174865 | Choi et al. | Jul 2012 | A1 |
20120175605 | Shin et al. | Jul 2012 | A1 |
20120183676 | Sonoda et al. | Jul 2012 | A1 |
20120214263 | Yamazaki et al. | Aug 2012 | A1 |
20120299016 | Choi | Nov 2012 | A1 |
20120299023 | Lee et al. | Nov 2012 | A1 |
20120299024 | Lee et al. | Nov 2012 | A1 |
20120301614 | Choi et al. | Nov 2012 | A1 |
20120301986 | Choi et al. | Nov 2012 | A1 |
20120313251 | Kato | Dec 2012 | A1 |
20130001528 | Chang et al. | Jan 2013 | A1 |
20130008379 | Chang et al. | Jan 2013 | A1 |
20130032829 | Sung et al. | Feb 2013 | A1 |
20130157016 | Kim | Jun 2013 | A1 |
20130217164 | Kang et al. | Aug 2013 | A1 |
20130291796 | Inoue et al. | Nov 2013 | A1 |
20130298829 | Jo et al. | Nov 2013 | A1 |
20130341598 | Chang et al. | Dec 2013 | A1 |
20140010957 | Inoue et al. | Jan 2014 | A1 |
20140014917 | Lee et al. | Jan 2014 | A1 |
20140014918 | Han | Jan 2014 | A1 |
20140014920 | Lee | Jan 2014 | A1 |
20140014921 | Choi | Jan 2014 | A1 |
20140014924 | Oh et al. | Jan 2014 | A1 |
20140014929 | Lee et al. | Jan 2014 | A1 |
Number | Date | Country |
---|---|---|
1476279 | Feb 2004 | CN |
1489419 | Apr 2004 | CN |
1556872 | Dec 2004 | CN |
1607868 | Apr 2005 | CN |
1682569 | Oct 2005 | CN |
1704501 | Dec 2005 | CN |
1814854 | Aug 2006 | CN |
1841696 | Oct 2006 | CN |
1 413 644 | Apr 2004 | EP |
1 418 250 | May 2004 | EP |
1 518 940 | Mar 2005 | EP |
2354270 | Aug 2011 | EP |
57-194252 | Nov 1982 | JP |
2-247372 | Oct 1990 | JP |
04-272170 | Sep 1992 | JP |
5-22405 | Mar 1993 | JP |
5-98425 | Apr 1993 | JP |
5-230628 | Sep 1993 | JP |
08-027568 | Jan 1996 | JP |
9-95776 | Apr 1997 | JP |
10-50478 | Feb 1998 | JP |
10-120171 | May 1998 | JP |
10-270535 | Oct 1998 | JP |
11-144865 | May 1999 | JP |
2000-068054 | Mar 2000 | JP |
2000-282219 | Oct 2000 | JP |
2000-323277 | Nov 2000 | JP |
2001-28325 | Jan 2001 | JP |
2001-052862 | Feb 2001 | JP |
2001-093667 | Apr 2001 | JP |
2002-75638 | Mar 2002 | JP |
2002-175878 | Jun 2002 | JP |
2002-348659 | Dec 2002 | JP |
2003-003250 | Jan 2003 | JP |
2003-077662 | Mar 2003 | JP |
2003-157973 | May 2003 | JP |
2003-197531 | Jul 2003 | JP |
2003-297562 | Oct 2003 | JP |
2003-321767 | Nov 2003 | JP |
2003-347394 | Dec 2003 | JP |
2004-035964 | Feb 2004 | JP |
2004-043898 | Feb 2004 | JP |
2004-76150 | Mar 2004 | JP |
2004-91858 | Mar 2004 | JP |
2004-103269 | Apr 2004 | JP |
2004-103341 | Apr 2004 | JP |
2004-107764 | Apr 2004 | JP |
2004-137583 | May 2004 | JP |
2004-143521 | May 2004 | JP |
2004-169169 | Jun 2004 | JP |
2004-199919 | Jul 2004 | JP |
2004-342455 | Dec 2004 | JP |
2004-349101 | Dec 2004 | JP |
2004-355975 | Dec 2004 | JP |
2005-044592 | Feb 2005 | JP |
2005-101505 | Apr 2005 | JP |
2005-122980 | May 2005 | JP |
2005-165015 | Jun 2005 | JP |
2005-174843 | Jun 2005 | JP |
2005-206939 | Aug 2005 | JP |
2005-213616 | Aug 2005 | JP |
2005-235568 | Sep 2005 | JP |
2005-293968 | Oct 2005 | JP |
2005-296737 | Oct 2005 | JP |
2006-028583 | Feb 2006 | JP |
2006-172930 | Jun 2006 | JP |
2006-176809 | Jul 2006 | JP |
2006-210038 | Aug 2006 | JP |
2006-219760 | Aug 2006 | JP |
2006-275433 | Oct 2006 | JP |
2006-292955 | Oct 2006 | JP |
2006-307247 | Nov 2006 | JP |
2007-047293 | Feb 2007 | JP |
2007-66862 | Mar 2007 | JP |
2007-146219 | Jun 2007 | JP |
2007-157886 | Jun 2007 | JP |
2007-186740 | Jul 2007 | JP |
2007-242436 | Sep 2007 | JP |
2007-291506 | Nov 2007 | JP |
2008-19477 | Jan 2008 | JP |
2008-108628 | May 2008 | JP |
2008-121098 | May 2008 | JP |
2008-521165 | Jun 2008 | JP |
2008-196003 | Aug 2008 | JP |
2008-248301 | Oct 2008 | JP |
2008-300056 | Dec 2008 | JP |
2009-019243 | Jan 2009 | JP |
2009-024208 | Feb 2009 | JP |
2009-049223 | Mar 2009 | JP |
2009-081165 | Apr 2009 | JP |
2009-087910 | Apr 2009 | JP |
2009-117231 | May 2009 | JP |
2010-159167 | Jul 2010 | JP |
2010-261081 | Nov 2010 | JP |
2011-47035 | Mar 2011 | JP |
2011-146377 | Jul 2011 | JP |
2012-92448 | May 2012 | JP |
2012-211352 | Nov 2012 | JP |
1997-0008709 | Feb 1997 | KR |
10-0257219 | Feb 2000 | KR |
10-2000-0019254 | Apr 2000 | KR |
10-2000-0023929 | May 2000 | KR |
2001-0024652 | Mar 2001 | KR |
2001-0030175 | Apr 2001 | KR |
10-2001-0039298 | May 2001 | KR |
10-2001-0059939 | Jul 2001 | KR |
10-2001-0092914 | Oct 2001 | KR |
2001-0093666 | Oct 2001 | KR |
20-0257218 | Dec 2001 | KR |
10-2002-0000201 | Jan 2002 | KR |
2002-0001555 | Jan 2002 | KR |
10-2002-0050922 | Jun 2002 | KR |
10-2002-0090934 | Dec 2002 | KR |
10-2002-0091457 | Dec 2002 | KR |
2003-0001745 | Jan 2003 | KR |
10-2003-0034730 | May 2003 | KR |
10-2003-0043012 | Jun 2003 | KR |
2003-0046090 | Jun 2003 | KR |
2003-0069684 | Aug 2003 | KR |
10-0405080 | Nov 2003 | KR |
10-0406059 | Nov 2003 | KR |
10-2003-0091947 | Dec 2003 | KR |
10-2003-0093959 | Dec 2003 | KR |
2003-0094033 | Dec 2003 | KR |
10-2004-0014258 | Feb 2004 | KR |
20-0342433 | Feb 2004 | KR |
10-2004-0034537 | Apr 2004 | KR |
10-2004-0039910 | May 2004 | KR |
10-0430336 | May 2004 | KR |
10-2004-0050045 | Jun 2004 | KR |
10-2004-0069281 | Aug 2004 | KR |
10-2004-0084747 | Oct 2004 | KR |
10-2004-0087142 | Oct 2004 | KR |
10-2004-0110718 | Dec 2004 | KR |
10-0463212 | Dec 2004 | KR |
10-2005-0018234 | Feb 2005 | KR |
10-2005-0024324 | Mar 2005 | KR |
10-2005-0028943 | Mar 2005 | KR |
10-2005-0039140 | Apr 2005 | KR |
10-0483487 | Apr 2005 | KR |
10-2005-0062853 | Jun 2005 | KR |
10-2005-0082644 | Aug 2005 | KR |
10-0520159 | Oct 2005 | KR |
10-0532657 | Dec 2005 | KR |
10-2006-0008602 | Jan 2006 | KR |
10-2006-0018745 | Mar 2006 | KR |
10-2006-0020050 | Mar 2006 | KR |
10-2006-0045225 | May 2006 | KR |
10-2006-0049050 | May 2006 | KR |
10-2006-0051746 | May 2006 | KR |
10-2006-0053926 | May 2006 | KR |
10-2006-0056706 | May 2006 | KR |
10-2006-0058459 | May 2006 | KR |
10-2009-0052828 | May 2006 | KR |
10-2006-0059068 | Jun 2006 | KR |
10-2006-0059323 | Jun 2006 | KR |
10-2006-0060994 | Jun 2006 | KR |
10-2006-0065978 | Jun 2006 | KR |
10-2006-0073367 | Jun 2006 | KR |
10-2006-0077887 | Jul 2006 | KR |
10-2006-0080475 | Jul 2006 | KR |
10-2006-0080481 | Jul 2006 | KR |
10-2006-0080482 | Jul 2006 | KR |
10-2006-0081943 | Jul 2006 | KR |
10-2006-0083510 | Jul 2006 | KR |
10-2006-0092387 | Aug 2006 | KR |
10-2006-0098755 | Sep 2006 | KR |
10-2006-0104288 | Oct 2006 | KR |
10-2006-0104675 | Oct 2006 | KR |
10-2006-0104677 | Oct 2006 | KR |
10-2006-0109561 | Oct 2006 | KR |
10-2006-0109627 | Oct 2006 | KR |
10-0635903 | Oct 2006 | KR |
10-2006-0114462 | Nov 2006 | KR |
10-2006-0114477 | Nov 2006 | KR |
10-2006-0114573 | Nov 2006 | KR |
10-0645719 | Nov 2006 | KR |
10-0646160 | Nov 2006 | KR |
10-2006-0123944 | Dec 2006 | KR |
10-0687007 | Feb 2007 | KR |
10-0696547 | Mar 2007 | KR |
10-0696550 | Mar 2007 | KR |
10-0697663 | Mar 2007 | KR |
10-0698033 | Mar 2007 | KR |
10-0700466 | Mar 2007 | KR |
10-2007-0035796 | Apr 2007 | KR |
10-2007-0037848 | Apr 2007 | KR |
10-0711885 | Apr 2007 | KR |
10-2007-0050793 | May 2007 | KR |
10-0723627 | May 2007 | KR |
10-2007-0056190 | Jun 2007 | KR |
10-0726132 | Jun 2007 | KR |
10-0736218 | Jul 2007 | KR |
10-0741142 | Jul 2007 | KR |
10-2007-0078713 | Aug 2007 | KR |
10-2007-0080635 | Aug 2007 | KR |
10-2007-0091437 | Sep 2007 | KR |
10-2006-0028115 | Oct 2007 | KR |
10-2007-0097218 | Oct 2007 | KR |
10-2007-0098122 | Oct 2007 | KR |
10-2007-0101842 | Oct 2007 | KR |
10-2007-0105595 | Oct 2007 | KR |
10-0768212 | Oct 2007 | KR |
10-0770653 | Oct 2007 | KR |
10-2007-0112668 | Nov 2007 | KR |
10-2007-0114094 | Nov 2007 | KR |
10-0739309 | Dec 2007 | KR |
10-0787457 | Dec 2007 | KR |
10-2008-0001184 | Jan 2008 | KR |
10-2008-0003720 | Jan 2008 | KR |
10-2008-0007896 | Jan 2008 | KR |
10-2008-0009285 | Jan 2008 | KR |
10-0797787 | Jan 2008 | KR |
10-0800125 | Jan 2008 | KR |
10-0815265 | Mar 2008 | KR |
10-2008-0036983 | Apr 2008 | KR |
10-0823508 | Apr 2008 | KR |
10-0823511 | Apr 2008 | KR |
10-2008-0044239 | May 2008 | KR |
10-2008-0044775 | May 2008 | KR |
10-2008-0046761 | May 2008 | KR |
10-0827760 | May 2008 | KR |
10-2008-0048653 | Jun 2008 | KR |
10-2008-0055124 | Jun 2008 | KR |
10-2008-0057159 | Jun 2008 | KR |
10-0839380 | Jun 2008 | KR |
10-2008-0060400 | Jul 2008 | KR |
10-2008-0061132 | Jul 2008 | KR |
10-2008-0061666 | Jul 2008 | KR |
10-2008-0061774 | Jul 2008 | KR |
10-2008-0062212 | Jul 2008 | KR |
10-0899279 | Jul 2008 | KR |
10-2008-0076574 | Aug 2008 | KR |
10-2008-0088737 | Oct 2008 | KR |
10-2008-0104479 | Dec 2008 | KR |
10-2008-0104695 | Dec 2008 | KR |
10-2008-0109559 | Dec 2008 | KR |
10-2009-0017910 | Feb 2009 | KR |
10-0889872 | Mar 2009 | KR |
10-2009-0038733 | Apr 2009 | KR |
10-2009-0040618 | Apr 2009 | KR |
10-2009-0047953 | May 2009 | KR |
10-2009-0052155 | May 2009 | KR |
10-2009-0053417 | May 2009 | KR |
10-2009-0066996 | Jun 2009 | KR |
10-2009-0075887 | Jul 2009 | KR |
10-2009-0079765 | Jul 2009 | KR |
10-2009-0081717 | Jul 2009 | KR |
10-0908232 | Jul 2009 | KR |
10-2009-0093161 | Sep 2009 | KR |
10-2009-0094911 | Sep 2009 | KR |
10-2009-0097453 | Sep 2009 | KR |
10-2009-0107702 | Oct 2009 | KR |
10-0922763 | Oct 2009 | KR |
10-2010-0000128 | Jan 2010 | KR |
10-2010-0000129 | Jan 2010 | KR |
10-2010-0002381 | Jan 2010 | KR |
10-2010-0026655 | Mar 2010 | KR |
10-2010-0038088 | Apr 2010 | KR |
10-2010-0044606 | Apr 2010 | KR |
10-2010-0047796 | May 2010 | KR |
10-0961110 | Jun 2010 | KR |
10-2010-0090070 | Aug 2010 | KR |
10-2010-0099806 | Sep 2010 | KR |
10-2010-0119368 | Nov 2010 | KR |
10-2010-0126125 | Dec 2010 | KR |
10-2010-0128589 | Dec 2010 | KR |
10-2010-0130786 | Dec 2010 | KR |
10-2010-0138139 | Dec 2010 | KR |
10-1017654 | Feb 2011 | KR |
10-2011-0021090 | Mar 2011 | KR |
10-2011-0022512 | Mar 2011 | KR |
10-2011-0032589 | Mar 2011 | KR |
10-2011-0082418 | Jul 2011 | KR |
10-2011-0101767 | Sep 2011 | KR |
10-2011-0110525 | Oct 2011 | KR |
10-2011-0120213 | Nov 2011 | KR |
10-2012-0006322 | Jan 2012 | KR |
10-2012-0006324 | Jan 2012 | KR |
10-2012-0012300 | Feb 2012 | KR |
10-2012-0042155 | May 2012 | KR |
10-2012-0065789 | Jun 2012 | KR |
10-2012-0080855 | Jul 2012 | KR |
10-2012-0081811 | Jul 2012 | KR |
10-1193186 | Oct 2012 | KR |
10-2012-0131545 | Dec 2012 | KR |
10-2013-0007308 | Jan 2013 | KR |
9925894 | May 1999 | WO |
03043067 | May 2003 | WO |
WO2004016406 | Feb 2004 | WO |
2008004792 | Jan 2008 | WO |
Entry |
---|
Patent Abstracts of Japan, and English machine translation of Japanese Publication 2001-052862, 20 pages. |
Patent Abstracts of Japan, and English machine translation of Japanese Publication 2003-003250, 25 pages. |
Korean Patent Abstracts, Publication No. 1020020086047, dated Nov. 18, 2002, for corresponding Korean Patent 10-0405080. |
Korean Patent Abstracts, Publication No. 1020020088662, dated Nov. 29, 2002, for corresponding Korean Patent 10-0463212. |
Korean Patent Abstracts, Publication No. 1020050045619, dated May 17, 2005, for corresponding Korean Patent 10-0520159. |
Korean Patent Abstracts, Publication No. 1020040062203, dated Jul. 7, 2002, for corresponding Korean Patent 10-0646160. |
Korean Patent Abstracts, Publication No. 1020060101987, dated Sep. 27, 2006, for corresponding Korean Patent 10-0687007. |
Korean Patent Abstracts, Publication No. 1020020056238, dated Jul. 10, 2002, for corresponding Korean Patent 10-0698033. |
Korean Patent Abstracts, Publication No. 1020050078637, datedugust 5, 2005, for corresponding Korean Patent 10-0700466. |
Korean Patent Abstracts, Publication No. 1020070025164, dated Mar. 8, 2007, for corresponding Korean Patent 10-0711885. |
Korean Patent Abstracts, Publication No. 1020020034272, dated May 9, 2002, for corresponding Korean Patent 10-0726132. |
Korean Patent Abstracts, Publication No. 1020060126267, dated Dec. 6, 2006, for corresponding Korean Patent 10-0797787. |
English Abstract, Publication No. 1020080002189, dated Jan. 4, 2008, for corresponding Korean Patent 10-0800125. |
Korean Patent Abstracts, Publication No. 1020070050793. dated May 16, 2007, for corresponding Korean Patent 10-0815265. |
Korean Patent Abstracts, Publication No. 1020010062735, dated Jul. 7, 2001, for corresponding Korean Patent 10-0827760. |
Korean Patent Abstracts, Publication No. 1020080038650, dated May 7, 2008, for corresponding Korean Patent 10-0839380. |
Machine English Translation of JP 2009-024208 A. |
European Search Report dated May 13, 2011 for European Application No. 11250019.4 (6 pages). |
European Search Report dated May 20, 2011 for European Application No. 10251404.9 (12 pages). |
European Search Report dated May 27, 2011 for European Application No. 10251514.5 (11 pages). |
European Search Report dated Sep. 6, 2010 for European Application No. 10250962.7 (5 pages). |
U.S. Interview Summary dated Mar. 11, 2014 for U.S. Appl. No. 12/813,786 (4 pages). |
U.S. Office action dated Apr. 1, 2013, issued to U.S. Appl. No. 12/784,774 (44 pages). |
U.S. Office action dated Apr. 29, 2013, issued to U.S. Appl. No. 12/820,355 (31 pages). |
U.S. Office action dated Aug. 13, 2013, issued to U.S. Appl. No. 13/194,759, (28 pages). |
U.S. Office Action dated Aug. 2, 2013 for U.S. Appl. No. 12/868,099 (32 pages). |
U.S. Office action dated Aug. 21, 2013 issued in cross-reference U.S. Appl. No. 12/820,355 (14 pages). |
U.S. Office action dated Aug. 7, 2013, issued to U.S. Appl. No. 13/015,357, (30 pages). |
U.S. Office action dated Aug. 8, 2013, for cross reference U.S. Appl. No. 13/093,707, (7 pages). |
U.S. Office Action dated Dec. 13, 2011 for U.S. Appl. No. 12/849,193 (30 pages). |
U.S. Office action dated Dec. 16, 2013 for U.S. Appl. No. 14/054,536 (35 pages). |
U.S. Office action dated Dec. 17,2012, issued to U.S. Appl. No. 12/873,556 (37 pages). |
U.S. Office action dated Dec. 26, 2012, issued to U.S. Appl. No. 12/815,673 (21 pages). |
U.S. Office action dated Feb. 11, 2014, for cross reference U.S. Appl. No. 13/178,472 (8 pages). |
U.S. Office action dated Feb. 26, 2013, issued to U.S. Appl. No. 12/794,093 (31 pages). |
U.S. Office action dated Feb. 6, 2014, for U.S. Appl. No. 12/984,231 (16 pages). |
U.S. Office action dated Jan. 25, 2013, issued to U.S. Appl. No. 13/015,357 (21 pages). |
U.S. Office action dated Jul. 11, 2013 for U.S. Appl. No. 13/461,669 (27 pages). |
U.S. Office action dated Jul. 17, 2013, issued to U.S. Appl. No. 12/984,231, (18 pages). |
U.S. Office action dated Jul. 24, 2013, issued to U.S. Appl. No. 12/784,804, (52 pages). |
U.S. Office action dated Jul. 3, 2013 in U.S. Appl. No. 12/873,689 (48 pages). |
U.S. Office action dated Jul. 5, 2013, issued to U.S. Appl. No. 12/873,556, (17 pages). |
U.S. Office Action dated Jun. 11, 2013 for U.S. Appl. No. 12/979,656 (50 pages). |
U.S. Office action dated Jun. 11, 2013, issued to U.S. Appl. No. 12/862,125 (37 pages). |
U.S. Office action dated Jun. 17, 2013, for cross reference U.S. Appl. No. 13/180,454, (23 pages). |
U.S. Office Action dated Jun. 21, 2011 for U.S. Appl. No. 12/862,153 (21 pages). |
U.S. Office action dated Jun. 26, 2013, issued to U.S. Appl. No. 12/794,093 (20 pages). |
U.S. Office action dated Mar. 15, 2013, issued to U.S. Appl. No. 12/813,786 (33 pages). |
U.S. Office action dated Mar. 17, 2014, for U.S. Appl. No. 12/950,361 (48 pages). |
U.S. Office action dated Mar. 18, 2013, issued to U.S. Appl. No. 12/984,231 (29 pages). |
U.S. Office action dated Mar. 19, 2013, issued to U.S. Appl. No. 13/194,759 (36 pages). |
U.S. Office action dated Mar. 22, 2013, issued to U.S. Appl. No. 12/987,569 (12 pages). |
U.S. Office Action dated Mar. 23, 2012 for U.S. Appl. No. 12/849,193 (17 pages). |
U.S. Office action dated May 22, 2013, for cross reference U.S. Appl. No. 13/219,427, (26 pages). |
U.S. Office action dated May 24, 2013, for U.S. Appl. No. 13/279,077 (20 pages). |
U.S. Office action dated May 24, 2013, issued to U.S. Appl. No. 12/849,092 (31 pages). |
U.S. Office Action dated May 7, 2013, issued in U.S. Appl. No. 12/820,270 (37 pages). |
U.S. Office action dated Nov. 20, 2013, for cross reference U.S. Appl. No. 12/868,099, (14 pages). |
U.S. Office action dated Nov. 25, 2013, issued to U.S. Appl. No. 13/176,701, (49 pages). |
U.S. Office action dated Nov. 4, 2013, for U.S. Appl. No. 13/219,427, (26 pages). |
U.S. Office action dated Oct. 1, 2013, issued to U.S. Appl. No. 12/849,092, (13 pages). |
U.S. Office action dated Oct. 11, 2013, issued to U.S. Appl. No. 12/907,396, (44 pages). |
U.S. Office action dated Oct. 21, 2013, issued to U.S. Appl. No. 12/987,569, (14 pages). |
U.S. Office Action dated Oct. 3, 2013 for U.S. Appl. No. 12/869,830 (28 pages). |
U.S. Office action dated Oct. 7, 2013, issued to U.S. Appl. No. 13/279,077, (29 pages). |
U.S. Office action dated Sep. 20, 2013, issued to U.S. Appl. No. 13/014,225, (33 pages). |
U.S. Office action dated Sep. 25, 2013, for U.S. Appl. No. 13/031,756, (34 pages). |
U.S. Patent Office Action dated May 16, 2013, issued to U.S. Appl. No. 13/235,337 (28 pages). |
US Notice of Allowance, dated Mar. 18, 2013, issued to U.S. Appl. No. 12/795,001 (29 pages). |
US Office action dated Dec. 20, 2012, issued to U.S. Appl. No. 12/984,289 (20pages). |
US Office action dated Sep. 12, 2012, in U.S. Appl. No. 12/515,673 (26 pages). |
U.S. Notice of Allowance dated Feb. 20, 2014, issued to U.S. Appl. No. 12/907,396 (13 pages). |
U.S. Notice of Allowance dated Feb. 28, 2014, issued to U.S. Appl. No. 13/279,077 (12 pages). |
U.S. Notice of Allowance dated May 9, 2014 for U.S. Appl. No. 13/194,759 (27 pages). |
U.S. Office action dated Apr. 18, 2014, issued to U.S. Appl. No. 12/814,816 (9 pages). |
U.S. Office action dated Sep. 27, 2013, issued to U.S. Appl. No. 12/814,816 (19 pages). |
Number | Date | Country | |
---|---|---|---|
20120145077 A1 | Jun 2012 | US |