ORGANIC MEMORY

Abstract

An organic memory is provided. The organic memory at least comprises a plurality of select lines, a plurality of data lines, a bit cell array, and a plurality of digital sensing circuits. The bit cell array comprises a plurality of bit cells, wherein each bit cell comprises an organic memory cell and a switch element. Each digital sensing circuit comprises a current-to-voltage converter and a sensing block circuit. Therefore, the present invention provides a complete digital sensing mechanism of an organic memory IC, which is practicable and suitable for mass-production.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

FIG. 1 is a graph showing the ideal operating curve of an organic memory cell inside an organic memory.;

FIG. 2 shows a circuit block diagram of an organic memory according to an embodiment of the present invention;

FIG. 3 shows a circuit diagram of an embodiment of the bit cell in FIG. 2;

FIG. 4 shows a circuit diagram of an embodiment of the digital sensing circuit in FIG. 2;

FIG. 5 shows a timing diagram of each signal of the digital sensing circuit in FIG. 4;

FIG. 6 shows a circuit block diagram of an organic memory according to another embodiment of the present invention;

FIG. 7 shows a circuit block of an organic memory according to yet another embodiment of the present invention; and

FIG. 8 shows a circuit diagram of an embodiment of the bit cell in FIG. 7.

Claims

1. An organic memory, comprising: i select lines;j data lines;a bit cell array, comprising a plurality of bit cells, wherein one of the bit cells is connected between each data line and each select line, each bit cell comprises an organic memory cell and a switch element, and the organic memory cell is used to store at least one bit of information; andj digital sensing circuits, wherein each digital sensing circuit is connected to one of the data lines,wherein, the bit cell row B(n) is defined as all bit cells connected to the nth select line, when the nth select line is actuated, the switch elements in the bit cell row B(n) connect the organic memory cells in the bit cell row B(n) to the respective data lines, and the digital sensing circuits sense and read the bit information stored in the organic memory cells of the bit cell row B(n) through the data lines, wherein i, j, n are natural numbers, and n<=i.

2. The organic memory as claimed in claim 1, wherein each digital sensing circuit senses the bit information stored in the organic memory cell according to a conduction current flowing through the organic memory cell, and each digital sensing circuit comprises: a current-to-voltage converter, for converting the conduction current flowing through the current-to-voltage converter into a voltage signal; anda sensing block circuit, coupled to the current-to-voltage converter, for receiving the voltage signal, and buffering and outputting the bit information stored in the organic memory cell.

3. The organic memory as claimed in claim 2, wherein the current-to-voltage converter comprises: a first transistor, having a first source/drain connected to one of the data lines, and a gate connected to a first switch signal;a capacitor, having a first terminal connected to a second source/drain of the first transistor and a second terminal connected to a first potential, and the voltage signal is obtained from the first terminal; anda second transistor, having a first source/drain connected to the first terminal of the capacitor, a second source/drain connected to a second potential, and a gate connected to a second switch signal,wherein when the first transistor is on, the second transistor is off, and when the first transistor is off, the second transistor is on.

4. The organic memory as claimed in claim 3, wherein the first transistor and the second transistor are of the same type, and the second switch signal is out of phase with the first switch signal.

5. The organic memory as claimed in claim 3, wherein the first transistor and the second transistor are of different types, and the first switch signal is the same as the second switch signal.

6. The organic memory as claimed in claim 3, wherein the first potential is a ground potential, and the second potential is a power potential.

7. The organic memory as claimed in claim 2, wherein the sensing block circuit comprises: a third transistor, having a first source/drain connected to a second potential, and a gate connected to the voltage signal; anda fourth transistor, having a first source/drain connected to the second source/drain of the third transistor, a second source/drain connected to a first potential, and a gate connected to a first switch signal,wherein when the fourth transistor is off, the second source/drain of the third transistor outputs the bit information stored in the organic memory cell.

8. The organic memory as claimed in claim 2, wherein the sensing block circuit is further connected to a sample and hold circuit for reshaping and outputting the bit information stored in the organic memory cell.

9. The organic memory as claimed in claim 1, wherein the switch element comprises a transistor, having a first source/drain connected to one of the data lines, a gate connected to one of the select lines, and a second source/drain connected to the organic memory cell.

10. The organic memory as claimed in claim 1, wherein the organic memory is a non-volatile memory.

11. An organic memory, comprising: i select lines;j data lines;a bit cell array, comprising a plurality of bit cells, wherein one of the bit cells is connected between each data line and each select line, each bit cell comprises an organic memory cell and a switch element, and the organic memory cell is used to store at least one bit of information;a multiplexer, having multiple input terminals, a select terminal, and an output terminal, wherein the input terminals are connected to one of the data lines respectively, and one of the input terminals is connected to the output terminal by the multiplexer according to the select terminal; anda digital sensing circuit, coupled to the output terminal of the multiplexer,wherein, the bit cell row B(n) is defined as all bit cells connected to the nth select line, the bit cell M(m,n) is defined as the bit cell connected to the mth data line and the nth select line; when the nth select line is actuated, and the digital sensing circuit is connected to the mth data line by the multiplexer, the switch elements in the bit cell row B(n) connect the organic memory cells in the bit cell row B(n) to the respective data lines, and the digital sensing circuit senses and reads the bit information stored in the organic memory cell of the bit cell M(m,n), wherein i, j, m, n are natural numbers, and n<=i, m<=j.

12. The organic memory as claimed in claim 11, wherein the digital sensing circuit senses the bit information stored in the organic memory cell according to a conduction current flowing through the organic memory cell, and the digital sensing circuit comprises: a current-to-voltage converter, for converting the conduction current flowing through the current-to-voltage converter into a voltage signal; anda sensing block circuit, coupled to the current-to-voltage converter, for receiving the voltage signal, and buffering and outputting the bit information stored in the organic memory cell.

13. The organic memory as claimed in claim 12, wherein the current-to-voltage converter comprises: a first transistor, having a first source/drain connected to the output terminal of the multiplexer, and a gate connected to a first switch signal;a capacitor, having a first terminal connected to the second source/drain of the first transistor, and a second terminal connected to a first potential, and the voltage signal is obtained from the first terminal; anda second transistor, having a first source/drain connected to the first terminal of the capacitor, a second source/drain connected to a second potential, and a gate connected to a second switch signal,wherein when the first transistor is on, the second transistor is off, and when the first transistor is off, the second transistor is on.

14. The organic memory as claimed in claim 13, wherein the first transistor and the second transistor are of the same type, and the second switch signal is out of phase with the first switch signal.

15. The organic memory as claimed in claim 13, wherein the first transistor and the second transistor are of different types, and the first switch signal is the same as the second switch signal.

16. The organic memory as claimed in claim 13, wherein the first potential is a ground potential, and the second potential is a power potential.

17. The organic memory as claimed in claim 12, wherein the sensing block circuit comprises: a third transistor, having a first source/drain connected to a second potential, and a gate connected to the voltage signal; anda fourth transistor, having a first source/drain connected to the second source/drain of the third transistor, a second source/drain connected to a first potential, and a gate connected to a first switch signal,wherein when the fourth transistor is off, the second source/drain of the third transistor outputs the bit information stored in the organic memory cell.

18. The organic memory as claimed in claim 12, wherein the sensing block circuit is further connected to a sample and hold circuit for reshaping and outputting the bit information stored in the organic memory cell.

19. The organic memory as claimed in claim 11, wherein the switch element comprises a transistor, having a first source/drain connected to one of the data lines, a gate connected to one of the select lines, and a second source/drain connected to the organic memory cell.

20. The organic memory as claimed in claim 11, wherein the organic memory is a non-volatile memory.