Claims
- 1. A semiconductor device which comprises:(a) a layer of silicon having a thin oxide layer thereon; (b) a patterned layer of a masking material non-premeable to at least selected oxygen-bearing species and having a sidewall disposed over said oxide layer to provide an intersection of said masking material and said thin oxide layer; (c) a conductive path for said selected oxygen-bearing species on the sidewall of said masking material extending to said intersection capable of conducting said selected oxygen-bearing species to said intersection; (d) a sidewall layer of a material different from said conductive path on said conductive path; and (e) a region of oxide thicker than said thin oxide layer disposed under said conductive path and said sidewall layer.
- 2. The device of claim 1 wherein said masking material is silicon nitride.
- 3. The device of claim 1 wherein said path is silicon oxide.
- 4. The device of claim 2 wherein said path is silicon oxide.
- 5. The device of claim 1 wherein said sidewall layer is silicon nitride.
- 6. The device of claim 2 wherein said sidewall layer is silicon nitride.
- 7. The device of claim 3 wherein said sidewall layer is silicon nitride.
- 8. The device of claim 1 wherein said sidewall layer is non-permeable to said selected oxygen-bearing species.
- 9. The device of claim 8 wherein said masking material is silicon nitride, said path is silicon oxide and said sidewall layer is silicon nitride.
- 10. The device of claim 1 wherein said region of oxide thicker than said oxide layer is coupled to and is an extension of said thin oxide layer.
- 11. The device of claim 8 wherein said region of oxide thicker than said oxide layer is coupled to and is an extension of said thin oxide layer.
- 12. The device of claim 9 wherein said region of oxide thicker than said oxide layer is coupled to and is an extension of said thin oxide layer.
- 13. The device of claim 10 wherein said masking material is silicon nitride, said path is silicon oxide and said sidewall layer is silicon nitride.
- 14. The device of claim 13 wherein said sidewall layer is non-permeable to said selected oxygen-bearing species.
Parent Case Info
This application is a division of 08/942,058, filed Oct. 1, 1997.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
Country |
404275428 |
Oct 1992 |
JP |