This is a divisional application Ser. No. 09/863,980 filed May 23, 2001, now U.S. Pat. No. 6,498,383.
Number | Name | Date | Kind |
---|---|---|---|
4113515 | Kooi et al. | Sep 1978 | A |
5316965 | Philipossian et al. | May 1994 | A |
5596218 | Soleimani et al. | Jan 1997 | A |
5763315 | Benedict et al. | Jun 1998 | A |
5866465 | Doan et al. | Feb 1999 | A |
5968842 | Hsio | Oct 1999 | A |
5972783 | Arai et al. | Oct 1999 | A |
6037018 | Jang et al. | Mar 2000 | A |
6060132 | Lee | May 2000 | A |
6096662 | Ngo et al. | Aug 2000 | A |
6100160 | Hames | Aug 2000 | A |
6114222 | Thakur | Sep 2000 | A |
6127242 | Batra et al. | Oct 2000 | A |
6133113 | Jenq et al. | Oct 2000 | A |
6146970 | Witek et al. | Nov 2000 | A |
6150072 | Shoda et al. | Nov 2000 | A |
6218720 | Gardner et al. | Apr 2001 | B1 |
6258676 | Lee et al. | Jul 2001 | B1 |
6287939 | Huang et al. | Sep 2001 | B1 |
6291300 | Fukazawa et al. | Sep 2001 | B1 |
6303481 | Park | Oct 2001 | B2 |
6323106 | Huang et al. | Nov 2001 | B1 |
6333232 | Kunikiyo | Dec 2001 | B1 |
6355540 | Wu | Mar 2002 | B2 |
20010016428 | Smith et al. | Aug 2001 | A1 |
20010053583 | Fang et al. | Dec 2001 | A1 |
20020052127 | Gau et al. | May 2002 | A1 |
20020063343 | Lin | May 2002 | A1 |
Number | Date | Country |
---|---|---|
07-176606 | Jul 1995 | JP |
07-307382 | Nov 1995 | JP |
2001-085511 | Mar 2001 | JP |
Entry |
---|
International Technology Disclosures, entitled “2% Silane Plasma Enhanced CVD Dielectric Films”, by J.P. Gallagher, et al. vol. 2, No. 2, Feb. 25, 1984. |
Electronics Letters, May 11, 2000, vol. 36, No. 10, “Expansion of Effective Channel Width for MOSFETs Defined by Novel T-shaped Shallow Trench Isolation Fabricated with SION Spacers and Liners,” by K. Shiozawa, T. Oishi, Y. Abe, Y. Tokuda. |