Claims
- 1. A infrared detector array, comprising:
- (a) a plurality of Hg.sub.1-x Cd.sub.x Te photosensitive regions:
- (b) a passivation layer on said Hg.sub.1-x Cd.sub.x Te, said passivation layer a sulfide or selenide of Hg.sub.1-x Cd.sub.x Te and characterized by conversion of all of an oxide layer formed from said Hg.sub.1-x Cd.sub.x Te; and
- (c) gates and interconnections for said regions for detecting photogenerated charge in said Hg.sub.1-x Cd.sub.x Te.
- 2. The detector array of claim 1, wherein
- (a) said oxide layer is characterized by formation from said Hg.sub.1-x Cd.sub.x Te by anodic oxidation.
- 3. The detector array of claim 1, wherein:
- (a) said sulfide or selenide layer is primarily cadmium sulfide or cadmium selenide.
Parent Case Info
This application is a continuation of application Ser. No. 824,897, filed Jan. 31, 1986 now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0137988 |
Apr 1985 |
EPX |
58-82580 |
May 1983 |
JPX |
59-89472 |
May 1984 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Chin et al., "High-Performance Backside-Illuminated Hg.sub.0.78 Cd.sub.0.22 Te/CdTe(.lambda..sub.co =10 .mu.m) Planar Diodes", pp. 486 to 488, Applied Physics Letters, Sep. 1980. |
Continuations (1)
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Number |
Date |
Country |
Parent |
824897 |
Jan 1986 |
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