Claims
- 1. A plasma enhanced chemical vapor deposition process for the deposition of compounds of silicon selected from the group consisting of silicon oxide and silicon oxynitride having a substantially uniform thickness on a substrate from a mixture of precursor gases including silane comprising
- activating said precursor gases by passing them through a parallel plate electrode having a face plate including an array of tapered openings therein, wherein the openings for gas inlet are smaller than the openings for gas outlet and the taper is sufficient to increase the dissociation of one or more precursor gases as they pass through said faceplate, while applying radio frequency energy to the plate.
- 2. A process according to claim 1 wherein silicon oxide is deposited and the precursor gases are silane and N.sub.2 O.
- 3. A process according to claim 1 wherein silicon oxynitride is deposited from precursor gases including silane, ammonia, N.sub.2 O and nitrogen.
- 4. A plasma enhanced chemical vapor deposition process for the deposition of compounds of silicon having a substantially uniform thickness on a substrate from a mixture of precursor gases including silane and nitrogen comprising
- activating said precursor gases by passing them through a parallel plate electrode having an array of tapered openings therein, wherein the openings for gas inlet are smaller than the openings for gas outlet, and wherein the openings for gas outlet are large enough to permit gas dissociation and the inlet openings have a length and diameter which prevents plasma penetration into the parallel plate electrode.
- 5. A plasma enhanced chemical vapor deposition process according to claim 4 wherein said array is in the form of an interlocking face centered hexagonal pattern.
Parent Case Info
This application is a divisional of Ser. No. 07/746,178 filed Nov. 6, 1996, now U.S. Pat. No. 5,773,100, which is a continuation of Ser. No. 08/453,135 filed May 24, 1995, now abandoned, which is a continuation of Ser. No. 08/272,959 filed Jul. 11, 1994, now abandoned, which is a continuation of Ser. No. 07/809,050 filed Dec. 17, 1991, now abandoned, which is a continuation of Ser. No. 07/345,977 filed Apr. 28, 1989, now abandoned, which is a continuation of Ser. No. 07/085,424 filed Aug. 14, 1987, now U.S. Pat. No. 4,854,263 issued Aug. 8, 1989.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
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59-38373 |
Mar 1984 |
JPX |
Divisions (1)
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Number |
Date |
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Parent |
746178 |
Nov 1996 |
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Continuations (5)
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Number |
Date |
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Parent |
453135 |
May 1995 |
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Parent |
272959 |
Jul 1994 |
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Parent |
809050 |
Dec 1991 |
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Parent |
345977 |
Apr 1989 |
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Parent |
085424 |
Aug 1987 |
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