Claims
- 1. A substrate comprising a perovskite of the type ABO.sub.3 having a surface layer of AO*(ABO.sub.3).sub.n formed in a growth pattern parallel to the (100) surface of the ABO.sub.3 perovskite substrate.
- 2. A substrate according to claim 1, wherein said AO*(ABO.sub.3).sub.n surface layer disposed on the substrate is a single crystal layer.
- 3. A method of manufacturing a substrate including a perovskite of the type ABO.sub.3 with a surface layer of AO*(ABO.sub.3).sub.n, comprising the steps of: providing a substrate structure including a perovskite of the type ABO.sub.3 and exposing said perovskite substrate structure to an oxidizing atmosphere at temperatures greater than 750.degree. C. so as to form on the surface of said substrate structure an AO*(ABO.sub.3).sub.n layer in a growth pattern parallel to the (100) surface of the ABO.sub.3 perovskite substrate structure.
Priority Claims (1)
Number |
Date |
Country |
Kind |
196 00 218 |
Jan 1996 |
DEX |
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Parent Case Info
This is a Continuation-in-Part application of international application PCT/DE96/02501 filed Dec. 21, 1996 and claiming the priority of German patent application 196 00 218.4 filed Jan. 5, 1996.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5656382 |
Nashimoto |
Aug 1997 |
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Non-Patent Literature Citations (2)
Entry |
Szot, K. et al., "Layer structures BaO-BaTiO3 in the region of p-type conductivity on the surface of BaTiO3", Applied Physics A, vol. 53:563-567, Dec. 1991. |
Liang, Yong et al., "Atomic structures of reduced SrTiO3 (001) surfaces", Surface Science Letters, vol. 285:L510-L516, Apr. 1993. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
PCTDE9602501 |
Dec 1996 |
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