Photoelectric conversion device and solid-state imaging device

Abstract
A photoelectric conversion device comprising a photoelectric conversion part including a first electrode, a second electrode opposing to the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a smoothing layer for reducing roughness of a surface of the photoelectric conversion layer is provided between the first electrode or the second electrode and the photoelectric conversion layer.
Description

BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a schematic cross-sectional view to show an outline configuration of a photoelectric conversion device for explaining an embodiment of the invention.



FIG. 2 is a schematic cross-sectional view of one pixel of a solid-state imaging device using a photoelectric conversion device of the configuration as illustrated in FIG. 1 and is a view to show a first configuration example.



FIG. 3 is a schematic cross-sectional view of one pixel of a solid-state imaging device using the photoelectric conversion device of the configuration as illustrated in FIG. 1 and is a view to show a second configuration example.



FIG. 4 is a schematic cross-sectional view of one pixel of a solid-state imaging device using the photoelectric conversion device of the configuration as illustrated in FIG. 1 and is a view to show a third configuration example.



FIG. 5 is a schematic cross-sectional view to show a configuration of the photoelectric conversion device prepared in Comparative Example 1.



FIGS. 6A, 6B and 6C are each a surface SEM image of a photoelectric conversion device prepared in Comparative Example 1.



FIGS. 7A and 7B are each a surface SEM image of a photoelectric conversion device prepared in Example 1.



FIGS. 8A and 8B are each a surface SEM image of a photoelectric conversion device prepared in Example 2.



FIG. 9 is an energy diagram of a photoelectric conversion device prepared in Example 1.



FIG. 10 shows the absorption spectrum of the photoelectric conversion device prepared in Example 1.



FIG. 11 shows the bias voltage dependence of dark current and photocurrent of the photoelectric conversion device prepared in Example 1.



FIG. 12 shows the action spectrum of the photoelectric conversion device prepared in Example 1.



FIG. 13 shows the response speed of the photoelectric conversion device prepared in Example 1.



FIG. 14 is a sectional schematic view to show an outline configuration of the solid-state imaging device prepared in Example 4.



FIG. 15 is a sectional schematic view to show an outline configuration of the solid-state imaging device prepared in Example 4.



FIGS. 16A and 16B show an original image of photographic subject and its image taken by a solid-state imaging device prepared in Example 4, respectively.



FIGS. 17A and 17B show an original image of photographic subject and its image taken by a solid-state imaging device prepared in Example 4, respectively.



FIG. 18 shows an original image of the gray scale chart and its image taken by a solid-state imaging device prepared in Example 4.



FIG. 19 shows an original image of the resolution chart and its image taken by a solid-state imaging device prepared in Example 4.


Claims
  • 1. A photoelectric conversion device comprising a photoelectric conversion part including a first electrode, a second electrode opposing to the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a smoothing layer for reducing roughness of a surface of the photoelectric conversion layer is provided between the first electrode or the second electrode and the photoelectric conversion layer.
  • 2. The photoelectric conversion device according to claim 1, wherein the smoothing layer comprises an amorphous material.
  • 3. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion layer comprises an organic polycrystalline material.
  • 4. The photoelectric conversion device according to claim 3, wherein the organic material contains a material having a quinacridone skeleton.
  • 5. The photoelectric conversion device according to claim 1, wherein the smoothing layer has a surface having a mean surface roughness Ra of not more than 1 nm.
  • 6. The photoelectric conversion device according to claim 1, wherein the smoothing layer comprises an organic material.
  • 7. The photoelectric conversion device according to claim 1, wherein the smoothing layer is transparent.
  • 8. The photoelectric conversion device according to claim 1, wherein the smoothing layer has a thickness of from 10 to 300 nm.
  • 9. The photoelectric conversion device according to claim 1, wherein the second electrode is an electrode in a light incident side,the smoothing layer is provided between the second electrode and the photoelectric conversion layer, andthe first electrode is an electrode for collecting electrons, and the second electrode is an electrode for collecting holes.
  • 10. The photoelectric conversion device according to claim 9, wherein the smoothing layer comprises a hole transporting material.
  • 11. The photoelectric conversion device according to claim 10, wherein the hole transporting material has a triphenylamine structure.
  • 12. The photoelectric conversion device according to claim 11, wherein the hole transporting material has a starburst amine structure.
  • 13. The photoelectric conversion device according to claim 9, wherein the first electrode has a work function of not more than 4.5 eV.
  • 14. The photoelectric conversion device according to claim 9, wherein the first electrode is ITO, and a layer of In is provided between the ITO and the photoelectric conversion layer.
  • 15. The photoelectric conversion device according to claim 1, wherein the second electrode is an electrode in a light incident side,the smoothing layer is provided between the second electrode and the photoelectric conversion layer, andthe first electrode is an electrode for collecting holes, and the second electrode is an electrode for collecting electrons.
  • 16. The photoelectric conversion device according to claim 15, wherein the smoothing layer comprises an electron transporting material.
  • 17. The photoelectric conversion device according to claim 16, wherein the electron transporting material is Alq3 or a derivative thereof.
  • 18. The photoelectric conversion device according to claim 15, wherein the second electrode has a work function of not more than 4.5 eV.
  • 19. The photoelectric conversion device according to claim 18, wherein the second electrode is Cs-doped ITO.
  • 20. The photoelectric conversion device according to claim 1, wherein at least one of the first electrode and the second electrode is a transparent electrode.
  • 21. The photoelectric conversion device according to claim 20, wherein both the first electrode and the second electrode are a transparent electrode.
  • 22. The photoelectric conversion device according to claim 20, wherein the transparent electrode is a layer containing a transparent conductive oxide.
  • 23. The photoelectric conversion device according to claim 22, wherein the transparent conductive oxide is ITO.
  • 24. The photoelectric conversion device according to claim 20, wherein the transparent electrode is a layer made of a metal formed by vapor deposition.
  • 25. The photoelectric conversion device according to claim 1, wherein the first electrode and the second electrode each has a thickness of from 5 to 200 nm.
  • 26. The photoelectric conversion device according to claim 1, which comprises: a semiconductor substrate having at least one of the photoelectric conversion part stacked on the upper side thereof;a charge storage part in the semiconductor substrate for storing a charge generated in the photoelectric conversion layer in the photoelectric conversion part; anda connecting part for electrically connecting the first electrode or the second electrode of the photoelectric conversion part to the charge storage part.
  • 27. The photoelectric conversion device according to claim 26, further comprising a photoelectric conversion part in the semiconductor substrate for absorbing light which has transmitted through the photoelectric conversion layer in the photoelectric conversion part, generating a charge corresponding to the light and storing the generated charge in the semiconductor substrate.
  • 28. The photoelectric conversion device according to claim 27, wherein the photoelectric conversion part in the semiconductor substrate comprises plural photodiodes stacked within the semiconductor substrate for absorbing light of a different color, respectively.
  • 29. The photoelectric conversion device according to claim 27, wherein the photoelectric conversion part in the semiconductor substrate comprises plural photodiodes within the semiconductor substrate for absorbing light of a different color, respectively, arranged in a direction vertical to a direction of the incident light.
  • 30. The photoelectric conversion device according to claim 28, wherein one of the photoelectric conversion part is stacked on the upper side of the semiconductor substrate,the plural photodiodes are a photodiode having a p-n junction provided in a suitable position for absorbing blue light and a photodiode having a p-n junction provided in a suitable position for absorbing red light, andthe photoelectric conversion layer in the photoelectric conversion part absorbs green light.
  • 31. A solid-state imaging device including a number of the photoelectric conversion device according to claim 26, provided in an array state, wherein a signal read-out part for reading out a signal corresponding to the charge stored in each of the plural photoelectric conversion devices is provided.
Priority Claims (1)
Number Date Country Kind
P2006-045955 Feb 2006 JP national