1. Field of the Invention
The present invention relates to a photomultiplier tube for detecting incident light from outside.
2. Related Background Art
Conventionally, compact photomultiplier tubes by utilization of fine processing technology have been developed. For example, a flat surface-type photomultiplier tube which is arranged with a photocathode, dynodes and an anode on a translucent insulating substrate is known (refer to Patent Document 1 given below). The above-described structure makes it possible to detect weak light at a high degree of reliability and also downsize a device. Further, in the photomultiplier tube, there is known a structure in which in order to collect electrons more efficiently between dynodes constituted so as to be stacked in a plurality of stages, each of the dynodes is provided with an accelerating electrode part which projects to a through hole of a dynode which is an upper stage (refer to Patent Document 2 given below).
However, when the above-described conventional photomultiplier tube is downsized, the photocathode and the electron multiplying part are also made small. Therefore, there is a tendency that a signal amount to be detected is small. As a result, it is necessary to obtain a higher electron multiplying efficiency at the electron multiplying part.
Under these circumstances, the present invention has been made in view of the above problem, an object of which is to provide a photomultiplier tube capable of obtaining a higher electron multiplying efficiency by improving an efficiency of guiding electrons from a dynode which is a previous stage to a dynode which is a subsequent stage, even when downsized.
In order to solve the above problem, the photomultiplier tube of the present invention is provided with a housing having a substrate in which at least an inner surface is formed with an insulating material, an electron multiplying part having N stages (N denotes an integer of two or more) of dynodes arrayed so as to be spaced away sequentially along one direction from a first end side on the inner surface of the housing to a second end side, a photocathode which is installed on the first end side inside the housing so as to be spaced away from the electron multiplying part, converting incident light from outside to photoelectrons to emit the photoelectrons, and an anode part which is installed on the second end side inside the housing so as to be spaced away from the electron multiplying part to take out electrons multiplied by the electron multiplying part as a signal, in which each of the N stages of dynodes is arranged on the inner surface and provided with a plurality of columnar parts where secondary electron emitting surfaces are formed, thereby forming electron multiplying channels having the secondary electron emitting surfaces between adjacent columnar parts among the plurality of columnar parts, and an opposing surface which opposes the columnar part of an Mth stage dynode at the columnar part of an M+1th stage (M denotes an integer of one or more but less than N) dynode is formed in such a manner that both end parts of the opposing surface in a direction along the inner surface project to the first end side from a site opposing an end part of the second end side on the secondary electron emitting surface at the columnar part of the Mth stage dynode.
According to the above described photomultiplier tube, incident light is made incident onto the photocathode, thereby converted to photoelectrons, and the photoelectrons are multiplied by being made incident into electron multiplying channels formed with a plurality of stages of dynodes on the inner surface inside the housing, and thus multiplied electrons are taken out as an electric signal from the anode part. Here, each of the dynodes is provided with a plurality of columnar parts where secondary electron emitting surfaces in contact with electron multiplying channels are formed, and an opposing surface which is in a previous stage side at a columnar part of a dynode which is a subsequent stage is formed in such a manner that both end parts along the inner surface of a substrate project from the center of a site which opposes an end part which is in a subsequent stage side on the secondary electron emitting surface of a dynode which is a previous stage. Therefore, it is possible to increase a potential in the vicinity of the secondary electron emitting surface inside the electron multiplying channel of a dynode which is a previous stage and also efficiently guide multiplied electrons from a dynode which is a previous stage to a dynode which is a subsequent stage. As a result, it is possible to obtain a high electron multiplying efficiency.
It is preferable that an opposing surface which opposes the columnar part of the M+1th stage dynode at the columnar part of the Mth stage dynode is formed in such a manner that a site opposing the end part of the M+1th stage dynode is recessed to the first end side. In this instance, an electric field pushed out by an opposing surface in a previous stage side at a dynode which is a subsequent stage is easily drawn into a dynode which is a previous stage, by which a potential inside the electron multiplying channel rises, thus making it possible to increase an electron multiplying efficiency.
It is also preferable that each of the N stages of dynodes are provided with a base part which is formed at end parts on the inner surface side at the plurality of columnar parts to electrically connect the plurality of columnar parts, and the base part of the Mth stage dynode is formed at a site corresponding to the end part of the columnar part of the M+1th stage dynode so as to be recessed to the first end side. When the above-described constitution is adopted, it is possible to improve the withstand voltage properties between adjacent stages of dynodes and therefore bring the dynodes closer to each other. As a result, multiplied electrons can be efficiently guided from a dynode which is a previous stage to a dynode which is a subsequent stage, thus making it possible to further increase the electron multiplying efficiency.
Further, it is preferable that the anode part is provided with an electron trapping part which is formed in such a manner as to be recessed to the second end side opposite to the electron multiplying channel of the Nth stage dynode. The electron trapping part is able to efficiently trap multiplied electrons from the Nth stage dynode.
Hereinafter, a detailed description will be given for preferred embodiments of the photomultiplier tube related to the present invention by referring to drawings. In addition, in describing the drawings, the same or corresponding parts will be given the same reference numerals to omit overlapping description.
The photomultiplier tube 1 shown in
It is noted that in the following description, the upstream side of an electron multiplying channel (the side of the photocathode) along a direction at which electrons are multiplied is given as “a first end side,” while the downstream side (the side of the anode part) is given as “a second end side.” Further, a detailed description will be given for individual constituents of the photomultiplier tube 1.
As shown in
The side-wall frame 3 is constituted with a rectangular flat-plate like silicon substrate 30 as a base material. A penetration part 301 enclosed by a frame-like side wall part 302 is formed from a main surface 30a of the silicon substrate 30 toward an opposing surface 30b thereto. The penetration part 301 is provided with a rectangular opening and an outer periphery of which is formed so as to run along the outer periphery of the silicon substrate 30.
Inside the penetration part 301, the wall-like electrode 32, the focusing electrodes 31, the electron multiplying parts 33 and the anode part 34 are arranged from the first end side to the second end side. The wall-like electrode 32, the focusing electrodes 31, the electron multiplying parts 33 and the anode part 34 are formed by processing the silicon substrate 30 according to RIE (Reactive Ion Etching) processing, etc., and mainly made with silicon.
The wall-like electrode 32 is a frame-like electrode which is formed so as to enclose a photocathode 41 to be described later when viewed from a direction completely opposite to an opposing surface 40a of the glass substrate 40 to be described later (a direction approximately perpendicular to the opposing surface 40a and a direction opposite to a direction indicated by the arrow A of
The electron multiplying parts 33 are constituted with N stages (N denotes an integer of two or more) of dynodes (an electron multiplying part) set so as to be different in potential along a direction at which electrons are multiplied from the photocathode 41 to the anode part 34 (in a direction indicated by the arrow B of
The wall-like electrode 32, the focusing electrodes 31, the electron multiplying parts 33 and the anode part 34 are individually fixed to the lower frame 4 by anode bonding, diffusion joining and joining, etc., using a sealing material such as a low-melting-point metal (for example, indium), by which they are arranged on the lower frame 4 two-dimensionally.
The lower frame 4 is constituted with the rectangular flat-plate like glass substrate 40 as a base material. The glass substrate 40 forms an opposing surface 40a, that is, an inner surface of the casing 5, which opposes the opposing surface 20a of the wiring substrate 20, by use of glass which is an insulating material. The photocathode 41 which is a transmission-type photocathode is formed at a site opposing a penetration part 301 of the side wall frame 3 on the opposing surface 40a (a site other than a joining region with a side wall part 302) and at the end part opposite to the side of the anode part 34. Further, a rectangular recessed part 42 which prevents multiplied electrons from being made incident onto the opposing surface 40a is formed at a site where the electron multiplying parts 33 and the anode part 34 on the opposing surface 40a are loaded.
A detailed description will be given for an internal structure of the photomultiplier tube 1 by referring to
As shown in
Further, the photocathode 41 is installed so as to be spaced away from the 1st stage dynode 33a on the first end side to the first end side on the opposing surface 40a behind the focusing electrodes 31. The photocathode 41 is formed on the opposing surface 40a of the glass substrate 40 as a rectangular transmission-type photocathode. When incident light transmitted from outside through the glass substrate 40, which is the lower frame 4, arrives at the photocathode 41, photoelectrons corresponding to the incident light are emitted, and the photoelectrons are guided into the 1st stage dynode 33a by the wall-like electrode 32 and the focusing electrodes 31.
Further, the anode part 34 is installed so as to be spaced away from the final stage dynode 33l on the second end side to the second end side on the opposing surface 40a. The anode part 34 is an electrode for taking outside electrons which are multiplied in a direction indicated by the arrow B inside the electron multiplying channels C of the electron multiplying parts 33 as an electric signal. Still further, the anode part 34 is provided with an electron trapping part 70 formed so as to be recessed from an opposing surface which opposes the dynode 33l to the second end side of the opposing surface 40a in such a manner as to oppose the electron multiplying channel C of the final stage dynode 33l. The electron trapping part 70 has a protruding part 72 which narrows an electron incident opening 71 on the same side as the secondary electron emitting surface of the dynode 33l.
A more detailed description will be given for a structure of the electron multiplying part 33 by referring to
Electron multiplying channels for subjecting secondary electrons to cascade amplification in association with photoelectrons which are made incident are formed by the plurality of columnar parts 51a to 51d belonging to the plurality of stages of dynodes 33a to 33d. For the sake of convenience, a more detailed description will be given by extracting one electron multiplying channel C from those of the dynodes 33c to 33e. That is, as shown in
Here, an opposing surface 54e which opposes the columnar part 51d of the dynode 33d which is a previous stage at the columnar part 51e of the dynode 33e which is a subsequent stage is formed in the following shape. More specifically, the opposing surface 54e is formed in such a shape that both end parts 56e, 57e in a direction along the opposing surface 40a project in a direction opposite to a direction at which electrons are multiplied (the first end side or a direction opposite to the direction indicated by the arrow B), from a site 55e which opposes an end part 64d in a direction at which electrons are multiplied (on the second end) side on the secondary electron emitting surface 53d of the dynode 33d which is a previous stage. In other words, the opposing surface 54e is formed in such a shape that the shape of the cross section including the site 55e along the opposing surface 40a is recessed in a direction at which electrons are multiplied on the basis of a plain surface P1 passing through the end parts 56e, 57e perpendicular to a direction at which electrons are multiplied. Further, the opposing surface 54e is formed approximately in a smooth circular arc shape so as to be recessed to the second end side both from the end part 56e to the site 55e and from the end part 57e to the site 55e when viewed from a direction completely opposite to the opposing surface 40a of the lower frame 4, thereby formed approximately in a smooth circular arc shape so as to be recessed to the second end side as a whole. Still further, the opposing surface 54d which opposes the columnar part 51e of the dynode 33e which is a subsequent stage at the columnar part 51d of the dynode 33d which is a previous stage is formed in a shape corresponding to the columnar part 51e. That is, the opposing surface 54d is formed in such a manner that a site 58d opposing the end part 57e of the opposing surface 54e is recessed in a direction (the first end side) opposite to a direction at which electrons are multiplied. At a region where the opposing surface 54d of the columnar part 51d faces to the opposing surface 54e of the columnar part 51e, an interval between both of the surfaces in a direction at which electrons are multiplied is made substantially uniform.
Further, the base parts 52d, 52e are formed in such a shape that corresponds to the shapes of the above-described columnar parts 51d, 51e. More specifically, sites 59e, 60e corresponding to both of the end parts 56e, 57e of the columnar part 51e are formed at the base part 52e in such a shape so as to project in a direction opposite to a direction at which electrons are multiplied. Still further, a site 61d corresponding to the site 58d of the columnar part 51d is formed at the base part 52d in such a shape as to be recessed in a direction opposite to a direction at which electrons are multiplied. In addition, a site 62d opposing the site 59e of the base part 52e is formed at the base part 52d in such a shape as to be recessed in a direction opposite to a direction at which electrons are multiplied. That is, at the base parts 52d, 52e as well, an interval between them in a direction at which electrons are multiplied is made substantially uniform.
It is noted that in the plurality of stages of dynodes 33a to 33l, an opposing surface between an adjacent Mth stage dynode and an M+1th stage (1≦M<12) dynode is formed in a shape similar to the above-described shape. Further, the respective opposing surfaces between the final stage dynode 33l and the anode part 34 are also formed in a shape similar to the above-described shape.
Next, a description will be given for a wiring structure of the photomultiplier tube 1 by referring to
As shown in
The above constituted upper frame 2 and the side wall frame 3 are joined, by which the conductive terminal 203 is electrically connected to the side wall part 302 of the side wall frame 3. Also, the power supplying part 36 of the electron multiplying part 33, the power supplying part 37 of the anode part 34 and the power supplying part 38 of the wall-like electrode 32 are respectively connected to the corresponding conductive layers 202 independently via conductive members made with gold (Au), etc. The above-described connecting structure makes it possible to electrically connect the side wall part 302, the electron multiplying part 33 and the anode part 34 respectively to the conductive terminals 201A, 201C, 201D. Also, the wall-like electrode 32 is electrically connected to the conductive terminal 201B together with the focusing electrodes 31 and the photocathode 41 (
According to the photomultiplier tube 1 which has been so far described, incident light is made incident onto the photocathode 41, thereby converted to photoelectrons, and the photoelectrons are multiplied by being made incident into electron multiplying channels C formed with a plurality of stages of dynodes 33a to 33l on the inner surface 40a inside the casing 5, and thus multiplied electrons are taken out as an electric signal from the anode part 34. Here, each of the dynodes 33a to 33e is provided with a plurality of columnar parts 51a to 51e where secondary electron emitting surfaces which constitute electron multiplying channels C are formed. The opposing surface 54e in a previous stage side at the columnar part 51e of the dynode 33e which is a subsequent stage is formed in such a manner that both end parts 56e, 57e along the inner surface 40a of the lower frame 4 project from the site 55e opposing the end part in a subsequent stage side on the secondary electron emitting surface 53d of the columnar part 51d which is a previous stage. Therefore, a potential of the dynode 33e which is a subsequent stage is allowed to permeate into the electron multiplying channel C of the dynode 33d which is a previous stage, thus making it possible to increase a potential in the vicinity of the secondary electron emitting surface 53d and also efficiently guide multiplied electrons from the dynode 33d which is a previous stage to the dynode 33e which is a subsequent stage. Further, a part opposing the dynode 33e which is a subsequent stage at the dynode 33d which is a previous stage is formed in such a manner that the site 61d opposing the end part 57e of the dynode 33e is recessed. Therefore, an electric field pushed out by the opposing surface 54e in a previous stage side at the dynode 33e which is a subsequent stage is easily drawn into the side of the dynode 33d without being prevented by a potential applied to the dynode 33d which is a previous stage. Then, a potential inside the electron multiplying channel C is elevated, thus making it possible to further increase an electron multiplying efficiency. As a result, it is possible to obtain a high electron multiplying efficiency even if the electron multiplying part 33 is downsized.
Further, since the base part 52d of the dynode 33d which is a previous stage is formed so as to be recessed to the first end side at the site 62d corresponding to the end part 56e at the columnar part 51e of the dynode 33e which is a subsequent stage, it is possible to improve the withstand voltage properties between adjacent dynodes 33d, 33e. Thereby, the dynodes 33d, 33e are allowed to be brought closer. As a result, multiplied electrons can be efficiently guided from the dynode 33d which is a previous stage to the dynode 33e which is a subsequent stage, thus making it possible to further increase the electron multiplying efficiency. At the adjacent dynodes 33d, 33e as well, an interval between them in a direction at which electrons are multiplied can be made substantially uniform. Therefore, it is possible to further improve the withstand voltage properties and also improve the reproducibility of the shape by removing variance in the shape on processing by RIE processing, etc.
Still further, the anode part 34 is provided with an electron trapping part 70 formed so as to be recessed from an opposing surface which opposes the dynode 33l to the second end side of the opposing surface 40a in such a manner as to oppose the electron multiplying channel of the final stage dynode 33l. It is, therefore, possible to efficiently trap multiplied electrons from the final stage dynode 33l by the electron trapping part 70 formed so as to be recessed. The electron trapping part 70 is also provided on the same side as the secondary electron emitting surface of the dynode 33l with a protruding part 72 which narrows the electron incident opening 71. Then, such a state is provided that confines the multiplied electrons guided into the electron trapping part 70, by which the multiplied electrons can be utilized as a detection signal more reliably. Further, on the respective opposing surfaces between the final stage dynode 33l and the anode part 34 as well, there is formed a shape similar to the opposing surface between the above-described adjacent dynodes. It is, therefore, possible to form an electric field that will efficiently guide electrons from the final stage dynode 33l to the electron trapping part 70 of the anode part 34.
It is noted that the present invention shall not be limited to the embodiments so far described. For example, various modes can be adopted for the wiring structure of the present embodiment. For example, as shown in
Further, as shown in
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