Claims
- 1. A photosensitive image-forming element comprising on a support at least one photosensitive layer containing silver halide crystals internally doped in the center of the crystal volume with a transition metal complex while forming a deep and permanent electron trap providing an incorporated molecular entity having a trapping lifetime whereby the lowest unoccupied molecular orbital of the incorporated molecular entity is at least 0.5 eV below the conduction band of the silver halide crystal, and the trapping lifetime at room temperature is longer than 0.2 seconds and satisfying the equation (I):
- 0<FORM<10.sup.+5 (I)
- wherein ##EQU3## wherein d.sub.1 represents a spherical equivalent diameter (SED), expressed in .mu.m, corresponding with a central part of said crystal doped with the said transition metal complex, d expressed in .mu.m represents the spherical equivalent diameter of the whole crystal volume, while Q represents the concentration of the transition metal complex, expressed in 10.sup.-9 mole per mole of silver halide and wherein the said transition metal complex has the following general formula (1):
- [MX.sub.n Y.sub.m L.sub.q ].sup.r- ( 1)
- wherein:
- M represents a metal selected from the group consisting of an element from Group 5 up to Group 10 of the Periodic System of the Elements;
- X and Y, which are different from each other, each represents one of the elements from the group consisting of Cl, Br and I;
- L represents any anorganic or organic ligand;
- n and m each equals an integer having a value from 0 to 6, while n+m equals 4, 5 or 6;
- q equals 0, 1 or 2 so that n+m+q=6 and
- r equals 1, 2, 3 or 4
- whereby from about 3 to about 75 volume percent of said transition metal complex is located in the inner region of the crystal volume.
- 2. A photosensitive image-forming element according to claim 1, wherein in the general formula (1) of the transition metal complex represents a ligand L selected from the group consisting of NO, NS, OH, H.sub.2 O, CN, CO, CH.sub.3 CN, CNS, NCS, NO.sub.2, F, SeCN, CNSe, TeCN, CNTe, OCN, CNO, N.sub.3 and COO.
- 3. A photosensitive image-forming element according to claim 1, wherein the spherical equivalent diameter (SED) is not more than 1 .mu.m.
- 4. A photosensitive image-forming element according to claim 1, wherein the spherical equivalent diameter (SED) is not more than 0.5 .mu.m.
- 5. A photosensitive image-forming element according to claim 1, wherein the said silver halide crystals comprise at least 10 mole % of chloride.
- 6. A photosensitive image-forming element according to claim 1, wherein the said silver halide crystals comprise at least 50 mole % of chloride.
- 7. A photosensitive image-forming element according to claim 1, wherein the said silver halide crystals contain one or more additional dopant(s) differing from the one described in formula (1) in that their electron-trapping activity is non-permanent.
- 8. A method for obtaining a photosensitive image-forming element according to claim 1, comprising the steps of:
- precipitation of silver halide emulsion crystals wherein one or more dopant(s) according to the general formula (1) are added in such a way that location and concentration of the said dopant(s) satisfy equations (I) and (II),
- chemically ripening and/or fogging said crystals while spectral sensitizing or desensitizing said emulsion, and
- coating the said emulsion on at least one side of a support.
- 9. A method for obtaining an image, comprising the steps of information-wise exposing a photosensitive image-forming element as defined in claim 1 and subsequently processing said information- wise exposed photosensitive image-forming element in the presence of ascorbic acid or a derivative thereof as an ecological developing agent(s) and silver halide solvent(s).
- 10. A method according to claim 9 using a developer comprising both hydroquinone and ascorbic acid or a derivative thereof.
- 11. The element of claim 1 wherein from about 5 to about 50 volume percent of said transition metal complex is located in the inner region of the crystal volume.
- 12. The element of claim 1 wherein from about 6 to about 21 volume percent of said transition metal complex is located in the inner region of the crystal volume.
Priority Claims (1)
Number |
Date |
Country |
Kind |
97200585 |
Mar 1997 |
EPX |
|
Parent Case Info
This application has the benefit of the provisional application Ser. No. 60/045,088 filed on Apr. 29, 1997.
US Referenced Citations (3)
Foreign Referenced Citations (1)
Number |
Date |
Country |
264288 |
Apr 1988 |
EPX |