Piezoelectric element and manufacturing method thereof, electronic device, ink jet device

Abstract

Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a rough outline of an aerosol deposition device used in a manufacturing method of the present invention.

FIG. 2 is a schematic depiction illustrating the inside of a chamber of a sputter device used in an example of the present invention.

FIG. 3 is a schematic depiction illustrating a section of a sample used for tape peel test carried out in an example of the present invention.

FIGS. 4A, 4B, 4C and 4D illustrate manufacturing processes of a piezoelectric element in an example of the present invention.

FIGS. 5A, 5B, 5C and 5D illustrate manufacturing processes of a piezoelectric element in an example of the present invention.

Claims

1. A piezoelectric element, comprising: at least a substrate, a piezoelectric film and an electrode disposed between the substrate and the piezoelectric film, whereinthe electrode includes an electroconductive oxide and an electroconductive metal,the electroconductive oxide is contained more than the electroconductive metal on the substrate side in the electrode,the electroconductive metal is contained more than the electroconductive oxide on the piezoelectric film side in the electrode.

2. The piezoelectric element according to claim 1, wherein the electrode includes an electroconductive oxide layer situated on the substrate side, an electroconductive metal layer including the electroconductive metal situated on the piezoelectric film side and a mixture layer provided between the electroconductive oxide layer and the electroconductive metal layer and having the electroconductive oxide and the electroconductive metal mixed therein.

3. The piezoelectric element according to claim 1, wherein the electroconductive metal is a Pt group.

4. The piezoelectric element according to claim 2, wherein a thickness of the mixture layer is not smaller than 10 nm and not larger than 1 μm.

5. The piezoelectric element according to claim 1, wherein concentration of the electroconductive oxide is reduced gradually from the substrate side to the piezoelectric film side of the electrode.

6. The piezoelectric element according to claim 2, comprising a graded composition structure in which a ratio of the electroconductive oxide in the mixture layer is reduced gradually from an interface between the mixture layer and the electroconductive oxide layer to-an interface between the mixture layer and the electroconductive metal layer.

7. The piezoelectric element according to claim 1, wherein a thickness of the piezoelectric film is not smaller than 1 μm and not greater than 200 μm.

8. The piezoelectric element according to claim 1, wherein the electroconductive oxide is an ABO3 perovskite type.

9. The piezoelectric element according to claim 8, wherein the electroconductive oxide of the ABO3 perovskite type is at least one type selected from the group including LaNiO3, LaCrO3, SrRuO3, CaRuO3, La1-xSrxCoO3, BaPbO3, La1-xSrxCaxRuO3, La1-xSrxTiO3 and SrIrO3, and compounds thereof.

10. The piezoelectric element according to claim 1, wherein the piezoelectric film is one of a lead zirconate titanate-based oxide and a relaxor-based dielectric material.

11. The piezoelectric element according to claim 10, wherein a main component of the lead zirconate titanate-based oxide is represented by Pb (Zry, Ti1-y) O3, where y is in the range of 0.2 to 0.8.

12. The piezoelectric element according to claim 10, wherein the relaxor-based dielectric material is at least one type selected from the group including Pb (Mn, Nb) O3—PbTiO3, Pb (Zn, Nb) O3—PbTiO3, Pb (Sc, Ta) O3—PbTiO3, Pb (In, Nb) O3—PbTiO3, Pb (Yb, Nb) O3—PbTiO3, Pb (Ni, Nb) O3—PbTiO3, and compounds thereof.

13. A manufacturing method of a piezoelectric element which comprises at least a substrate, a piezoelectric film and an electrode provided between the substrate and the piezoelectric film, comprising: providing an electrode on a substrate, andbaking a piezoelectric film after forming the piezoelectric film on the electrode, whereinthe electrode is adapted so that an electroconductive oxide is contained more than electroconductive metal on the substrate side, and the electroconductive metal is contained more than the electroconductive oxide on the piezoelectric film side of the electrode.

14. The manufacturing method of a piezoelectric element according to claim 13, wherein the electrode is provided on the substrate by providing an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal mixed therein situated on the electroconductive oxide layer and an electroconductive metal layer situated on the mixture layer on the substrate.

15. The manufacturing method of a piezoelectric element according to claim 13, wherein the piezoelectric film is formed by any of a gas deposition method, a sputter method, a sol-gel method or a CVD method.

16. The manufacturing method of a piezoelectric element according to claim 14, wherein the mixture layer is formed by forcing a plurality of targets to discharge concurrently by a sputter method.

17. An electronic device, using the piezoelectric element according to claim 1.

18. An ink jet device, using the piezoelectric element according to claim 1.