Plasma processing apparatus

Abstract

Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a sectional view of a conventional plasma processing apparatus;

FIG. 2 is a sectional view of the conventional plasma processing apparatus in a state, in which RF power is induced;

FIG. 3 is a sectional view of a plasma processing apparatus in accordance with one embodiment of the present invention;

FIG. 4 is an exploded perspective view illustrating the disposition structure of a ground member in accordance with one embodiment of the present invention;

FIG. 5 is a perspective view illustrating the disposition structure of a ground member in accordance with another embodiment of the present invention;

FIG. 6 is a perspective view illustrating the disposition structure of a ground reinforcing member in accordance with one embodiment of the present invention;

FIG. 7A to 7C are perspective views illustrating various modifications of the ground member in accordance with one embodiment of the present invention;

FIG. 8 is a perspective view illustrating the disposition structure of a ground member in accordance with another embodiment of the present invention; and

FIG. 9 is a schematic view illustrating a circuit, in which RF power flows, in a plasma processing apparatus in accordance with one embodiment of the present invention.

Claims

1. A plasma processing apparatus having a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers, each of the gate valves comprising: a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein;a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber;a valve driving unit connected to the valve for moving the valve in the vertical direction; anda ground member having the shape of a closed curve and disposed at the edge of the sealing plate or the back plate for grounding the gate valve.

2. The plasma processing apparatus according to claim 1, wherein the ground member is an O-ring made of a conductive material.

3. The plasma processing apparatus according to claim 1, wherein the ground member is a spiral ring made of a metal.

4. The plasma processing apparatus according to claim 1, wherein the ground member has a structure in which a spiral ring made of a metal is wound on the outer surface of an O-ring made of a conductive material.

5. The plasma processing apparatus according to claim 1, wherein a contact surface obtained by removing an anodizing film is formed on the inner surface of the valve housing contacting the ground member.

6. The plasma processing apparatus according to claim 1, wherein a groove having a shape corresponding to the ground member is formed in the inner surface of the valve housing contacting the ground member.

7. The plasma processing apparatus according to claim 6, wherein a bracket made of a metal having higher strength than that of aluminum is provided on the contact surface.

8. The plasma processing apparatus according to claim 7, wherein the bracket is made of one selected from the group consisting of stainless steel, Ti, and W.

9. The plasma processing apparatus according to claim 1, wherein an electrical connecting member for electrically connecting the valve housing and the chamber is provided between the valve housing and the chamber.

10. The plasma processing apparatus according to claim 9, wherein the electrical connecting member is a spiral ring made of a metal.

11. The plasma processing apparatus according to claim 9, wherein a contact surface obtained by removing an anodizing film is formed on the surface of the chamber or the valve housing contacting the electrical connecting member.

12. The plasma processing apparatus according to claim 1, wherein a ground reinforcing member for electrically connecting the lower surface of the valve and the lower surface of the valve housing is provided on the valve.

13. The plasma processing apparatus according to claim 12, wherein the ground reinforcing member is an aluminum strap having elasticity.

14. A plasma processing apparatus having a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers, each of the gate valves comprising: a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein;a valve disposed in the valve housing and opening and closing the opening of the processing chamber and an opening of the valve housing on the side of the processing chamber;a valve driving unit connected to the valve for moving the valve in the vertical direction; anda ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing,wherein the ground member is formed at a portion of the edge of the valve so as to prevent particles from dropping on a substrate passing through the opening of the valve housing.

15. The plasma processing apparatus according to claim 14, wherein: the valve includes a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; andthe ground member is disposed at the edge of the back plate.

16. The plasma processing apparatus according to claim 14, wherein: the valve includes a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber; andthe ground member is disposed at the edge of the sealing plate.

17. The plasma processing apparatus according to claim 15, wherein the ground member is disposed at side and lower portions of the sealing plate or the back plate.

18. The plasma processing apparatus according to claim 14, wherein the ground member is disposed at a portion of the edge of the valve corresponding to 10˜99% of the whole area of the edge of the valve.

19. The plasma processing apparatus according to 14, wherein the ground member is an O-ring made of a conductive material.

20. The plasma processing apparatus according to claim 14, wherein the ground member is a spiral ring made of a metal.

21. The plasma processing apparatus according to claim 14, wherein the ground member has a structure in which a spiral ring made of a metal is wound on the outer surface of an O-ring.

22. The plasma processing apparatus according to claim 14, wherein a groove obtained by removing an anodizing film to improve a contacting property with the ground member is formed in a portion of the surface of the valve contacting the ground member.

23. The plasma processing apparatus according to claim 14, wherein a groove obtained by removing an anodizing film to improve a contacting property with the ground member is formed in a portion of the surface of the valve housing contacting the ground member.

24. The plasma processing apparatus according to claim 14, wherein: the ground member has a structure in which an O-ring is disposed at the edge of the valve and a spiral ring made of a metal is wound on the outer surface of the O-ring at the side and lower portions of the valve; andan anodizing film remains on a portion of the valve housing corresponding to the upper portion of the ground member, and is removed from portions of the valve housing corresponding to the side and lower portions of the ground member to form a groove.

25. The plasma processing apparatus according to claim 14, wherein: the ground member has a structure in which an O-ring made of a conductive material is disposed at the edge of the valve and a spiral ring made of a metal is wound on the outer surface of the O-ring at the side and lower portions of the valve; andan anodizing film is removed from a portion of the valve housing corresponding to the ground member to form a groove.

26. The plasma processing apparatus according to claim 22, wherein a bracket made of a metal having higher strength than that of aluminum is provided on the groove.

27. The plasma processing apparatus according to claim 26, wherein the bracket is made of one selected from the group consisting of stainless steel, Ti, and W.