Claims
- 1. A semiconductor workpiece holder for use in a semiconductor electroplating apparatus used to plate a metal or metals onto a semiconductor workpiece, comprising:
a workpiece support mounted to support a semiconductor workpiece in position with at least a processed surface of the workpiece being in contact with a plating bath; at least one electrode finer which is electrically conductive and capable of receiving and conducting electrical current therethrough; said at least one electrode finger having an electrode shaft which extends toward a distal end; a contact part mounted to the distal end of the electrode shaft to provide an electrical contact face which bears upon the semiconductor workpiece during processing to communicate electrical current therethrough.
- 2. A semiconductor workpiece holder according to claim 1 wherein said contact part is made from a corrosion resistant metal.
- 3. A semiconductor workpiece holder according to claim 1 wherein said contact part is made from platinum.
- 4. A semiconductor workpiece holder according to claim 1 wherein said electrode shaft is made from a stainless steel or titanium.
- 5. A semiconductor workpiece holder according to claim 1 wherein:
said contact part is made from platinum; said electrode shaft is made from a stainless steel or titanium.
- 6. A semiconductor workpiece holder according to claim 1 and further comprising a dielectric layer formed about at least the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 7. A semiconductor workpiece holder according to claim 1 and further comprising a dielectric layer formed from a dielectric plastic material about at least the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 8. A semiconductor workpiece holder according to claim 1 and further comprising a dielectric layer formed from polyvinylidene fluoride about at least the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 9. A semiconductor workpiece holder according to claim 1 and further comprising a dielectric layer coated about at least the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 10. A semiconductor workpiece holder for use in a semiconductor electroplating apparatus used to plate a copper material onto a semiconductor workpiece, comprising:
a workpiece support mounted to support a semiconductor workpiece in position with at least a processed surface of the workpiece being in contact with a plating bath; at least one electrode finger which is electrically conductive and capable of receiving and conducting electrical current therethrough; said at least one electrode finger having an electrode shaft which extends toward a distal end; a contact part mounted to the distal end of the electrode shaft to provide an electrical contact face which bears upon the semiconductor workpiece during processing to communicate electrical current therethrough.
- 11. A semiconductor workpiece holder according to claim 10 wherein said contact part is made from a corrosion resistant metal.
- 12. A semiconductor workpiece holder according to claim 10 wherein said contact part is made from platinum.
- 13. A semiconductor workpiece holder according to claim 10 and further comprising a dielectric layer formed about the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 14. A semiconductor workpiece holder according to claim 10 and further comprising a dielectric layer formed from a dielectric plastic material about the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 15. A semiconductor workpiece holder according to claim 10 and further comprising a dielectric layer formed from polyvinylidene fluoride about the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 16. A semiconductor workpiece holder according to claim 10 and further comprising a dielectric layer coated about the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 17. A semiconductor workpiece holder for use in a semiconductor electroplating apparatus used to plate a metal or metals onto a semiconductor workpiece, comprising:
a workpiece support mounted to support a semiconductor workpiece in position with at least a processed surface of the workpiece being in contact with a plating bath; at least one electrode finger which is electrically conductive and capable of receiving and conducting electrical current therethrough; said at least one electrode finger having an electrode shaft which extends toward a distal end; a contact part mounted to the distal end of the electrode shaft to provide an electrical contact face which bears upon the semiconductor workpiece during processing to communicate electrical current therethrough; a dielectric layer formed about at least the distal end of the electrode shaft and against the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 18. A semiconductor workpiece holder according to claims 17, 23 wherein said contact part is made from a corrosion resistant metal.
- 19. A semiconductor workpiece holder according to claims 17, 23 wherein said contact part is made from platinum.
- 20. A semiconductor workpiece holder according to claims 17, 23 wherein said electrode shaft is made from a stainless steel or titanium.
- 21. A semiconductor workpiece holder according to claims 17, 23 wherein:
said contact part is made from platinum; said electrode shaft is made from a stainless steel or titanium.
- 22. A semiconductor workpiece holder according to claim 21 and further comprising a dielectric layer formed about at least the distal end of the electrode shaft and forming a seal against side walls of the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 23. A semiconductor workpiece holder for use in a semiconductor electroplating apparatus used to plate a metal or metals onto a semiconductor workpiece, comprising:
a workpiece support mounted to support a semiconductor workpiece in position with at least a processed surface of the workpiece being in contact with a plating bath; at least one electrode finger which is electrically conductive and capable of receiving and conducting electrical current therethrough; said at least one electrode finger having an electrode shaft which extends toward a distal end; a contact part mounted to the distal end of the electrode shaft to provide an electrical contact face which bears upon the semiconductor workpiece during processing to communicate electrical current therethrough; means forming a dielectric covering about at least the distal end of the electrode shaft and against the contact part to exclude plating liquid from a joint formed between the electrode shaft and the contact part.
- 24. A method for plating metals onto the surface of a semiconductor workpiece, comprising:
contacting a surface of the semiconductor workpiece with an electrode assembly; said contacting being performed using a contact face formed upon a contact part, said contact part being mounted to a distal end of an electrode shaft at a contact part joint existing between the electrode shaft and the contact part; said electrode assembly further having a dielectric layer formed about the distal end of the electrode shaft and in sealing relationship against the contact part; submersing a processed surface of the semiconductor workpiece into a plating bath liquid which is used to plate a workpiece plating material onto the processed surface of the semiconductor workpiece; excluding plating bath liquid from the contact part joint using said dielectric layer; electroplating workpiece plating material onto the semiconductor workpiece by passing electrical current through the contact part and between the semiconductor workpiece and the electrode assembly.
- 25. A method according to claim 24 wherein said contact face plating layer is formed from said workpiece plating material.
- 26. A method according to claim 24 wherein said contact part is made from a noncorrosive metal.
- 27. A method according to claim 24 wherein said contact part is made from platinum.
- 28. A method for plating copper onto the surface of a semiconductor workpiece, comprising:
contacting a surface of the semiconductor workpiece with an electrode assembly; said contacting being performed using a contact face formed upon a contact part, said contact part being mounted to a distal end of an electrode shaft at a contact part joint existing between the electrode shaft and the contact part; said electrode assembly further having a dielectric layer formed about the distal end of the electrode shaft and in sealing relationship against the contact part; submersing a processed surface of the semiconductor workpiece into a plating bath liquid which is used to plate a copper plating material onto the processed surface of the semiconductor workpiece; excluding plating bath liquid from the contact part joint using said dielectric layer; electroplating copper plating material onto the semiconductor workpiece by passing electrical current through the contact part and between the semiconductor workpiece and the electrode assembly.
- 29. A method according to claim 28 wherein said contact part is made from a noncorrosive metal.
- 30. A method according to claim 28 wherein said contact part is made from platinum.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a continuation-in-part of U.S. patent application Ser. No. 08/680,057, filed Jul. 15, 1996.
Continuations (2)
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Number |
Date |
Country |
Parent |
09441712 |
Nov 1999 |
US |
Child |
10102040 |
Mar 2002 |
US |
Parent |
08988333 |
Sep 1997 |
US |
Child |
09441712 |
Nov 1999 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
08680057 |
Jul 1996 |
US |
Child |
08988333 |
Sep 1997 |
US |