The present invention relates to a polishing method including a polishing process of polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad, and to the holding fixture used in the polishing method.
Conventionally, there has been known a method for polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. This type of polishing method is practiced using a single-sided polishing apparatus or a double-sided polishing apparatus. For example, Japanese Laid-Open Patent Publication No. 2011-253896 discloses a method for polishing one surface of a semiconductor wafer using a single-sided polishing apparatus. Japanese Laid-Open Patent Publication No. 7-156061 discloses a method for simultaneously polishing both surfaces of a computer disk substrate including magnetic films on both sides using a double-sided polishing apparatus.
Hereinafter, the configuration of a single-sided polishing apparatus and a conventional polishing method using the single-sided polishing apparatus will be described with reference to
As illustrated in
Incidentally, polishing unevenness is caused in some cases on a polished surface of the object when the above-described conventional polishing method is used. Specifically, as illustrated in
This problem is considered to be attributable to the polishing composition 15 supplied to the surface to be polished of the object W. That is, since the polishing head 14 rotates around the rotational axis P1 during polishing, the polishing composition 15 supplied onto the polishing pad 12 gets into between the object W and the polishing pad 12 from the periphery of the polishing head 14 and flows inward in the radial direction of the polishing head 14. Accordingly, the location B of the object W, which is positioned radially outward of the polishing head 14, is polished using a fresh polishing composition 15. On the other hand, the location A, which is positioned radially inward of the polishing head 14, is polished using the polishing composition 15 that has already been used to polish the location B and is, therefore, not fresh since abrasive grains or the like of the composition are worn-out. As described above, a difference in the degree of wear of the polishing composition 15 (i.e., whether or not the polishing composition 15 is fresh) used to polish the respective locations of the object W is considered to be contributory to a location-by-location variation in the amount of polishing. The above-described problem of polishing unevenness occurs not only in polishing methods using a single-sided polishing apparatus but also in polishing methods using a double-sided polishing apparatus.
An objective of the present invention, which has been accomplished in view of such circumstances as described above, is to provide a polishing method and a holding fixture capable of preventing the occurrence of polishing unevenness.
In order to achieve the objective described above and in accordance with one aspect of the present invention, there is provided a polishing method including a polishing process of polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. During the polishing process, the object held on the holding fixture turns around with the surface to be polished of the object facing the polishing pad to change the orientation of the object.
The polishing process preferably includes temporarily stopping an operation to polish the surface to be polished of the object to restart the operation to polish the surface to be polished of the object after changing the orientation of the object.
The object is preferably one of a plurality of objects to be polished held on the holding fixture.
The surface to be polished of the object may be a curvilinear surface. In that case, the surface to be polished of the object is preferably polished while pressing the object against the polishing pad and deforming the polishing pad into a shape conforming to the surface to be polished, which is the curvilinear surface.
The surface to be polished of the object may be composed of a plurality of surfaces. In that case, the surface to be polished of the object is preferably polished while pressing the object against the polishing pad and deforming the polishing pad into a shape conforming to the surface to be polished, which is composed of the plurality of surfaces.
The polishing process is preferably carried out by disposing a spacer between the holding fixture and the object and placing the surface to be polished of the object in a state of projecting toward the polishing pad.
In order to achieve the objective described above and in accordance with another aspect of the present invention, there is provided a holding fixture used in a polishing method of polishing a surface to be polished of an object by relatively rotating the holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. The holding fixture is provided with a polishing head for holding the object; and a rotating mechanism for turning around the object held on the polishing head with the surface to be polished of the object facing the polishing pad to change the orientation of the object.
The rotating mechanism is preferably provided with a rotating table onto which the object is fixed.
The holding fixture is preferably further provided with a spacer disposed between the rotating table and the object to project the surface to be polished of the object toward the polishing pad.
The rotating table is preferably arranged so as to project from the polishing head toward the polishing pad.
The polishing head is preferably configured to be able to hold a plurality of objects to be polished.
Other aspects and advantages of the invention will become apparent from the following description taken in conjunction with the accompanying drawings illustrating examples of the principles of the present invention.
Hereinafter, one embodiment of the present invention will be described.
First, a description will be made of an object W to be polished using a polishing method of the present embodiment.
As the object W to be polished, it is possible to use an object composed of metal, synthetic resin, ceramics, or a composite thereof. Examples of the metal include magnesium, aluminum, titanium, iron, nickel, cobalt, copper, zinc, manganese, and alloys consisting primarily of at least one of these metals. Examples of the synthetic resin include thermosetting resins, such as phenol resin, epoxy resin, urethane resin, and polyimide, and thermoplastic resins, such as polyethylene, polypropylene, and acrylic resin. Examples of the ceramics include oxides, carbides, nitrides, and borides of silicon, aluminum, zirconium, calcium, and barium, in addition to pottery, glass, and fine ceramics.
The outer shape of the object W is not limited in particular but may be polygonal, such as triangular and quadrangular, circular, elliptical, or annular.
The object W includes, as one surface thereof, a surface to be polished. The shape of the surface to be polished is not limited in particular. Specifically, as illustrated in
Next, a description will be made of a polishing apparatus used in the polishing method of the present embodiment.
Such a conventional single-sided polishing apparatus 10 as illustrated in
A polishing pad 12 is attached to the upper surface of the surface plate 11. The polishing pad 12 can be of any type of polishing pad suited to polish the surface to be polished of the object W according to, for example, the material of the object W and the shape of the surface to be polished of the object W. The polishing pad 12 preferably has a surface shape capable of uniformly coming into contact with the entire surface to be polished of the object W. From a similar point of view, the thickness and hardness of the polishing pad 12 are set as appropriate.
Specific examples of the material of the polishing pad 12 include fabric, nonwoven, resinated nonwoven, synthetic leather, synthetic resin foams, and composites of these materials. The polishing pad 12 may be composed of only one of the specific examples described above or may be composed of a combination of some of the specific examples described above.
The hardness of the polishing pad 12 is not limited in particular. The polishing pad 12 has a Shore A hardness of preferably 5 or higher, however, if the surface to be polished of the object W has a non-planar shape, for example, a curvilinear surface or a polyhedral shape composed of a plurality of surfaces. The Shore A hardness of the polishing pad 12 can be measured using a rubber hardness meter (A-type) compliant with the Japanese Industrial Standard JIS K6253 after the polishing pad 12 is left to stand for 60 minutes or longer in a dry condition with a humidity of 20 to 60% and at room temperature.
In the single-sided polishing apparatus 10 illustrated in
As illustrated in
Next, the polishing method of the present embodiment will be described. Here, a description will be made of a case where such an object W as illustrated in
As illustrated in
At this time, the polishing pad 12 deforms into a shape conforming to the surface W2, as illustrated in
Subsequently, as illustrated in
As the polishing composition 15, it is possible to use a known polishing composition, specifically, a processing liquid, such as a polishing liquid, a lapping liquid, and a grinding fluid, primarily containing abrasive grains and water. Examples of the abrasive grains include alumina, silica, ceria, diamond, and silicon carbide. The polishing composition 15 may contain only one type or more than one type of the abrasive grains described above. The polishing composition 15 may contain other components, such as a surfactant, a polymer material, a pH adjuster, an antiscattering agent, a thickening agent, and a redox agent.
Various conditions used in the polishing process described above are not limited in particular but may be set as appropriate according to, for example, the material and shape of the object W. For example, the flow rate of the polishing composition 15 supplied onto the polishing pad 12 is preferably 10 ml/min or higher. The rotational speed of the surface plate 11 and the rotational speed of the polishing head 14 of the holding fixture 13 are preferably such that a linear velocity is within the range from 10 m/min to 300 m/min on the surface to be polished of each object W. The polishing load is preferably 0.05 kg/cm2 to 10 kg/cm2 per a unit area of the surface to be polished of each object W.
Also in the polishing method of the present embodiment, both temporarily stopping a polishing operation, i.e., an operation to relatively rotate the objects W and the polishing head 14 while supplying the polishing composition 15 onto the polishing pad 12, and changing the orientations of the objects W held on the polishing head 14 of each holding fixture 13 are performed during a polishing process when a predetermined period of time elapses.
Specifically, as illustrated in
After the objects W are changed in orientation, a polishing operation is performed under the holding condition illustrated in
Next, the action of the present embodiment will be described.
As illustrated in
Next, the advantageous effects of the present embodiment will be described.
(1) The polishing method includes a polishing process of polishing a surface to be polished of an object W by rotating a holding fixture 13 and a polishing pad 12 with the surface to be polished of the object W held on the holding fixture 13 being pressed against and placed in contact with the polishing pad 12, while supplying a polishing composition 15 onto the polishing pad 12. During the polishing process, the object W held on the holding fixture 13 turns around with the surface W2 to be polished of the object W facing the polishing pad 12 to change the orientation of the object W. Accordingly, the polishing method prevents the occurrence of polishing unevenness in which a specific location of the surface to be polished of each object W is larger or smaller in the amount of polishing than other locations.
(2) The orientation of each object W is changed so that each location of the surface to be polished of the object W switches in rotation among a position (position radially outward of the polishing head 14) where the amount of polishing is relatively large, a position (position radially inward of the polishing head 14) where the amount of polishing is relatively small, and a position intermediate between those positions. If the location of each object W marked with a star in
Accordingly, the entire surface to be polished of each object W is likely to be polished more uniformly, compared with a case where each object W is rotated in increments of 180°, rather than 90°, to change the orientation of the object W, so that the object W switches between a position where the amount of polishing is relatively small and a position where the amount of polishing is relatively large. As a result, the occurrence of polishing unevenness is prevented more effectively.
(3) The polishing process includes temporarily stopping the operation to polish the surface to be polished of the object W, changing the orientation of the object W, and then restarting the operation to polish the surface to be polished of the object W. Accordingly, it is possible to use an existing single-sided polishing apparatus 10 as is.
(4) The object W includes a curvilinear surface W2 to be polished, and the surface W2 is polished while pressing the object W against the polishing pad 12 to deform the polishing pad 12 into a shape conforming to the surface W2 to be polished. In this case, the area of contact of the polishing pad 12 with the surface W2 increases, and the polishing pad 12 comes into very close contact with the surface W2. For this reason, a polishing composition 15 having got into between the object W and the polishing pad 12 has difficulty in flowing therebetween and is less likely to be supplied inward in the radial direction of the polishing head 14 during the polishing process. As a result, the problem in which the amount of polishing of a location A (positioned radially inward of the polishing head 14), which is close to the rotational axis P1 of the polishing head 14 is smaller than the amount of polishing of a location B (positioned radially outward of the polishing head 14), which is far away from the rotational axis P1 of the polishing head 14 develops remarkably (see
Accordingly, the effect of suppressing polishing unevenness by the polishing method of the present embodiment is especially significant when the surface W2 is polished while deforming the polishing pad 12 into a shape conforming to the surface W2. The same effect is available in a case where the object W includes a plurality of surfaces W3 to be polished, and the surfaces W3 are polished while pressing the object W against the polishing pad 12 to deform the polishing pad 12 into a shape conforming to the surfaces W3 to be polished.
The present embodiment can be modified as described below and put into effect.
The problem of polishing unevenness in objects W due to the difference in the degree of wear of the polishing composition 15 (i.e., whether or not the polishing composition 15 is fresh) arises also when only the polishing pad 12 is rotated without rotating the holding fixtures 13. That is, if only the polishing pad 12 is rotated, the polishing composition 15 supplied onto the polishing pad 12 flows arcuately along the rotational direction of the polishing pad 12 and between each object W held on the holding fixture 13 and the polishing pad 12.
Here, assume that in the example illustrated in
Conversely, assume that the polishing composition 15 flows arcuately from the lower side of the drawing toward the upper side thereof. At this time, the location A of each object W positioned on the upper side is polished using a fresh polishing composition 15, whereas the location B is polished using a non-fresh polishing composition 15 that has been used to polish the location A, and therefore, the abrasive grains and the like of which are worn-out.
In this way, the degree of wear of the polishing composition 15 used to polish the respective locations of each object W differs also when only the polishing pad 12 is rotated without rotating the holding fixtures 13. Thus, polishing unevenness occurs in the object W due to this difference. Such polishing unevenness caused when only the polishing pad 12 is rotated can also be prevented from occurring by changing the orientation of the object W during the polishing process.
An angle S by which the orientation of each object W is changed at a time and the number of times T with which the orientation of each object W is changed are preferably in the relationship satisfying “S(T+1)=360”. In this case, it is possible to more effectively prevent the occurrence of polishing unevenness. The angle by which the orientation of each object W is changed may be varied for each operation to change the orientation of the object W.
In the example illustrated in
In the configuration of
In the example illustrated in
In the configuration of
According to the configuration of
The same holds true when a holding fixture 13 including a rotating mechanism is used. As illustrated in
In this case, such an object including surfaces to be polished on both sides as illustrated in
As the double-sided polishing apparatus, it is possible to use such a known double-sided polishing apparatus as disclosed in Japanese Laid-Open Patent Publication No. 7-156061. The double-sided polishing apparatus is provided with a pair of polishing pads oppositely disposed on the upper and lower sides of the apparatus; and a holding fixture for holding an object W to be polished between these polishing pads. The holding fixture is, for example, a plate-like member including a holding hole corresponding in shape to the outer shape of the object W. The object W is inserted in the holding hole and held by means of interaction, such as engagement, between the inner circumferential surface of the holding hole and a side surface Ws of the object W (see
In the double-sided polishing method, a polishing process of polishing two surfaces of the object W is carried out by relatively rotating the holding fixture and the polishing pads with both surfaces of the object W held on the holding fixture being pressed against and placed in contact with the upper and lower polishing pads, while supplying a polishing composition onto the polishing pads. The object W is temporarily detached from the holding hole of the holding fixture in the course of this polishing process. Thereafter, the object W is inserted in the holding hole with the orientation of the object W changed, and is once again held on the holding fixture, as illustrated in, for example,
Next, the present invention will be described more specifically by referring to Examples and Comparative Examples.
Using the single-sided polishing apparatus illustrated in
Such a flat glass plate (56 mm in depth×60 mm in width×0.86 mm in thickness) including a curvilinear surface to be polished as illustrated in
The rotation of the surface plate and the holding fixture was stopped in six minutes after the start of polishing operation. Then, the object held on a holding fixture was turned around 180° and changed from the holding condition illustrated in
Thereafter, a surface roughness measurement was made for the respective locations WA, WB, and WC of the polished surface of each object illustrated in
Table 2 shows the results of surface roughness measurement of the respective locations described above. For reference, Table 2 also shows the surface roughness of each location before polishing. Surface roughness measurements were conducted using the SURFCOM 1500DX surface roughness measuring instrument made by Tokyo Seimitsu Co., Ltd under the conditions of “standard: JIS'94, filter cut off: 250 μm, measurement length: 1 mm”.
Polishing operation was performed under the same polishing conditions of Examples using the same object as in Examples. In Comparative Examples, however, polishing was finished after the object was polished for 10 minutes under the holding condition illustrated in
As shown in Table 2, in accordance with Comparative Examples, in which the operation to change the orientation of the object was not performed, polishing of the location WA (location positioned radially inward of the holding fixture) progressed less compared with the location WB (location positioned radially outward of the holding fixture). Thus, polishing unevenness occurred between the location WA and the location WB. In contrast, in accordance with Examples, in which the operation to change the orientation of the object was performed, the location WA and the location WB were substantially the same in surface roughness. Thus, no polishing unevenness occurred between the location WA and the location WB.
The foregoing description is intended to be illustrative and not restrictive. For example, the above-described examples (or one or a plurality of aspects thereof) may be used in combination with each other. By examining the foregoing description, other embodiments may be used by, for example, a person skilled in the art. In the detailed description presented above, various characteristic features may be grouped together in order to simplify the disclosure. This should not be construed as unclaimed characteristic features of the disclosure being intended to be essential for any claims for patent. Rather, the subject matter of the present invention may lie in less than all characteristic features of the specific embodiments disclosed. Accordingly, the appended claims are incorporated into the detailed description, with each claim claiming itself as a separate embodiment. The scope of the present invention should be defined by reference to the appended claims for patent and along with the full range of equivalents to which the appended claims are entitled.
Number | Date | Country | Kind |
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2014-075649 | Apr 2014 | JP | national |