Claims
- 1. An aqueous polishing composition comprising abrasive particles and water of basic pH to remove a barrier layer from a dielectric layer by chemical mechanical polishing, the aqueous polishing composition containing polyethyleneimine, the polyethyleneimine forming multiple polar bonding sites for forming bonds with bonding groups on a hydrated dielectric layer of a semiconductor substrate and for forming a hydrophilic protective film of the polyethyleneimine on the dielectric layer and the polyethyleneimine having a molecular weight of 50,000 to 1,000,000.
- 2. The aqueous polishing composition as recited in claim 1 wherein the polyethyleneimine has an average molecular weight of 800,000.
- 3. The aqueous polishing composition as recited in claim 1 wherein the dielectric layer is hydrated silica and the polyethyleneimine forms bonds through hydrogen and silanol bonding groups on the hydrated silica dielectric layer.
- 4. A method of adjusting a chemical mechanical polishing selectivity ratio of barrier layer removal rate to dielectric layer removal rate on a semiconductor wafer comprising the steps of:providing the polishing composition of an aqueous polishing composition comprising abrasive particles and water of basic pH to remove a barrier layer from a dielectric layer by chemical mechanical polishing the aqueous polishing composition containing polyethyleneimine, the polyethyleneimine forming multiple polar bonding sites for forming bonds with bonding groups on a hydrated dielectric layer of a semiconductor substrate and for forming a hydrophilic protective film of the polyethyleneimine on the dielectric layer and the polyethyleneimine having a molecular weight of 50,000 to 1,000,000; and performing chemical mechanical polishing with the polishing composition and with a polishing pad to remove the barrier layer from the dielectric layer on a semiconductor wafer.
CROSS REFERENCE TO RELATED APPLICATION
This application is a continuation in part of application Ser. No. 09/759,583 filed Jan. 12, 2001 abn.
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/759583 |
Jan 2001 |
US |
Child |
10/005253 |
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US |