Patent Grant
11618126
Chemical mechanical polishing (CMP) is a widely used process by which both chemical and physical forces are used to globally planarize a semiconductor workpiece, such as a wafer. Generally, the planarization prepares the workpiece for the formation of a subsequent layer. A typical CMP tool comprises a rotating platen covered by a polishing pad. A slurry distribution system is configured to provide a polishing mixture, having chemical and abrasive components, to the polishing pad. A workpiece is then brought into contact with the rotating polishing pad to planarize the workpiece.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides several different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
One or more polishing pad conditioning apparatuses for conditioning a semiconductor wafer polishing pad are provided herein. According to some embodiments, a polishing pad conditioning apparatus comprises a base structure having protrusions protruding from a surface of the base structure. According to some embodiments, the base structure is an elliptical disk and at least some of the protrusions are composites. According to some embodiments, at least some of the composite protrusions comprise a polymer circumscribing a fiber. According to some embodiments, the fiber protrudes beyond a tip portion of the polymer. According to some embodiments, the protrusions are arranged in clusters of protrusions on the base structure. According to some embodiments, a plurality of clusters of protrusions are arranged in the form of an ellipse on the base structure. According to some embodiments, several pluralities of clusters are arranged in the form of several ellipses on the base structure. According to some embodiments, the several ellipses are concentric circles. According to some embodiments, some protrusions within a cluster of protrusions are a first height, while other protrusions within the cluster of protrusions are a second height. According to some embodiments, the second height is different than the first height.
According to some embodiments, the shape of the base 104 is at least one of conical, disk-like, geometric, elliptical, polygonal, symmetrical, asymmetrical, irregular, or other suitable shape. According to some embodiments, the base 104 is at least one of circular, oval, rounded, or other shape having one or more foci. According to some embodiments, the base 104 includes a peripheral portion 108, such as at or near a perimeter of the base, and a center portion 112. According to some embodiments, the protrusions 102 are located between the peripheral portion 108 and the center portion 112. According to some embodiments, the protrusions 102 are located at least one of at the peripheral portion 108, at the center portion 112, or between the peripheral portion 108 and the center portion 112.
According to some embodiments, the protrusions 102 protrude away from the surface 106 of the base 104. According to some embodiments, some protrusions 102 protrude away from and perpendicular to the surface 106 of the base 104. According to some embodiments, some protrusions 102 protrude away from the base 104 at an angle that is not perpendicular to the surface 106 of the base 104. According to some embodiments, some protrusions 102 protrude away from and perpendicular to the surface 106 of the base 104, and some other protrusions 102 protrude away from the base 104 at an angle that is not perpendicular to the surface 106 of the base 104.
According to some embodiments, two or more protrusions are arranged as a cluster of protrusions 114 on the base 104. According to some embodiments, a cluster of protrusions 114 refers to multiple protrusions positioned closely together.
According to some embodiments, the polishing pad conditioning apparatus 100 includes one or more clusters of protrusions. According to some embodiments, a plurality of clusters of protrusions 116 are arranged on the base 104 in the form of an ellipse 118. According to some embodiments, an ellipse is at least one of circular, oval, rounded, or other shape having one or more foci. According to some embodiments, the ellipse 118 defines a zone of the base 104. According to some embodiments, multiple pluralities of clusters of protrusions are arranged as multiple concentric ellipses on the base 104. According to some embodiments, multiple pluralities of clusters of protrusions are arranged as multiple concentric circles on the base 104. According to some embodiments, a first plurality of clusters of protrusions 116 is a first distance from the perimeter of the base 104, and a second a plurality of clusters of protrusions 116 is a second distance from the perimeter of the base 104. According to some embodiments, the first distance is greater than the second distance.
According to some embodiments, a plurality of clusters of protrusions 116 are arranged as one or more geometric shapes on the base 104. According to some embodiments, a geometric shape comprising a plurality of clusters of protrusions 116 defines a zone of the polishing pad conditioning apparatus 100. According to some embodiments, the polishing pad conditioning apparatus 100 comprises one or more zones. According to some embodiments, one or more clusters of protrusions, such as 110a-110d, are arranged between the center portion 112 and the peripheral portion 108 of the base 104. According to some embodiments, the polishing pad conditioning apparatus 100 has a first zone that is a first shape and a second zone that is a second shape different than the first shape. According to some embodiments, the polishing pad conditioning apparatus 100 has a first zone that is elliptical and a second zone that is between the center portion 112 of the base 104 and the peripheral portion 108 of the base 104. According to some embodiments, the polishing pad conditioning apparatus 100 has any number of zones. According to some embodiments, the polishing pad conditioning apparatus 100 has any number of protrusions 102. According to some embodiments, the protrusions 102 are arranged relative to one another in any manner, configuration, etc. According to some embodiments, the polishing pad conditioning apparatus 100 has any number of clusters of protrusions 114. According to some embodiments, the clusters of protrusions 114 are arranged relative to one another in any manner, configuration, etc.
According to some embodiments, the base 104 includes one or more mounting mechanisms 119 for attaching the polishing pad conditioning apparatus 100 to a wafer polishing apparatus. According to some embodiments, the one or more mounting mechanisms 119 are at least one of a female fitting, a male fitting, a connector, a clasp, an aperture, a recess, or other suitable item. According to some embodiments, at least some of the one or more mounting mechanisms 119 are an aperture or recess fashioned into or through the base 104. According to some embodiments, at least some of the one or more mounting mechanisms 119 are attached to the base 104, such as a connector, clasp, etc. joined to the base 104 by soldering, fusing, chemical bonding, etc.
According to some embodiments, the proximate ends 120 to the surface 106 of the base 104 of some protrusions 102 are embedded in the base 104. According to some embodiments, the proximate ends 120 to the surface 106 of the base 104 of some protrusions 102 are friction fit into the base 104. According to some embodiments, the proximate ends 120 to the surface 106 of the base 104 of some protrusions 102 are heat bonded to or into the base 104. According to some embodiments, the proximate ends 120 to the surface 106 of the base 104 of some protrusions 102 are chemically bonded to or into the base 104. According to some embodiments, the proximate ends 120 to the surface 106 of the base 104 of some protrusions 102 are mechanically bonded to or into the base 104. According to some embodiments, at least some protrusions 102 include at least one wafer conditioning material 124.
According to some embodiments, at least some protrusions 102 of the cluster of protrusions 114 are bound together and attached to the base 104 as a group. According to some embodiments, at least some protrusions 102 of the cluster of protrusions 114 are individually attached to the base 104.
According to some embodiments, some protrusions 102 are of uniform length. According to some embodiments, some protrusions 102 are of non-uniform length, such that the length of some protrusions 102 of the cluster of protrusions 114 is different than the length of some other protrusions 102 of the cluster of protrusions 114. According to some embodiments, some protrusions 102 of the cluster of protrusions 114 have a first length, some other protrusions 102 of the cluster of protrusions 114 have a second length, and yet other protrusions 102 of the cluster of protrusions 114 have a third length. According to some embodiments, the first length is different than the second length and the third length, and the second length is different than the third length. According to some embodiments, the cluster of protrusions 114 comprises protrusions 102 of more than three different lengths.
According to some embodiments, in use some protrusions 102 of the cluster of protrusions 114 have a first polishing performance, some other protrusions 102 of the cluster of protrusions 114 have a second polishing performance, and yet other protrusions 102 of the cluster of protrusions 114 have a third polishing performance. According to some embodiments, the first polishing performance is greater than the second polishing performance, and the second polishing performance is greater than the third polishing performance. According to some embodiments, initially the first polishing performance is greater than the second and third polishing performances, and subsequently the second polishing performance is greater than the first and third polishing performances. According to some embodiments, the third polishing performance is greater than the first and second polishing performances.
According to some embodiments, some protrusions 102 of the cluster of protrusions 114 wear down over time due to frictional contact with one or more polishing pads during conditioning. According to some embodiments, when the cluster of protrusions 114 is initially put to use for conditioning polishing pads, the longer protrusions 102, such as at least one protrusion 102a, contact the surfaces of the polishing pads to a greater extent than the shorter protrusions, such as at least one other protrusion 102b. According to some embodiments, the protrusions that contact the surface of the polishing pads to a greater extent have a greater polishing effect or performance. As the cluster of protrusions 114 polishes pads over time, the longer protrusions will, on average, wear down sooner than the shorter protrusions. According to some embodiments, when the wafer conditioning material 124 of a longer protrusion wears down to at or below a tip portion 126, the protrusion becomes less effective at polishing. However, according to some embodiments, the full or partial length of the conditioning material of shorter protrusions sustains an effective polishing performance of the cluster of protrusions 114. Thus, according to some embodiments, initially the longer protrusions contact the polishing pads more so than the shorter protrusions, and the longer protrusions have a more effective polishing performance than do the shorter protrusions. Over time of use, the longer protrusions wear down and the relatively shorter protrusions have a greater polishing effect than do the worn down longer protrusions. According to some embodiments, the level of the polishing effect or performance of a cluster of protrusions having protrusions of different lengths is maintained to a higher degree as compared to a cluster of protrusions having all protrusions of the same length.
Referring to
According to some embodiments, the polishing component 128 is a single component. According to some embodiments, the polishing component 128 comprises more than one component. According to some embodiments, the polishing component 128 comprises two or more coupled components. According to some embodiments, the polishing component 128 comprises two or more distinct components. According to some embodiments, the polishing component 128 comprises a composite of materials. According to some embodiments, the polishing component 128 comprises one or more conditioning fibers. According to some embodiments, the polishing component 128 comprises at least one carbon fiber.
According to some embodiments, the polishing component 128 is inflexible. According to some embodiments, the polishing component 128 is predominantly inflexible. According to some embodiments, the polishing component 128 is rigid. According to some embodiments, the polishing component 128 is predominantly rigid. According to some embodiments, the polishing component 128 is brittle.
According to some embodiments, the tensile strength of the polishing component 128 is greater than 300 kilopounds per square inch (ksi) and less than 700 ksi. According to some embodiments, the tensile strength of the polishing component 128 is greater than 450 ksi and less than 550 ksi.
According to some embodiments, the density of the polishing component 128 is greater than 1.0 g/cm3 and less than 3.0 g/cm3. According to some embodiments, the density of the polishing component 128 is greater than 1.5 g/cm3 and less than 1.7 g/cm3.
According to some embodiments, the modulus of elasticity of the polishing component 128 is greater than 15 mega-pounds per square inch (Msi) and less than 30 Msi. According to some embodiments, the modulus of elasticity of the polishing component 128 is greater than 18 Msi and less than 22 Msi.
According to some embodiments, the polishing component 128 is chemical resistant. According to some embodiments, the polishing component 128 remains stable at temperatures above 300° Fahrenheit. According to some embodiments, the coefficient of thermal expansion of the polishing component 128 is negative.
According to some embodiments, the polishing component 128 comprises carbon. According to some embodiments, the polishing component 128 comprises carbon crystals. According to some embodiments, the polishing component 128 comprises carbon fiber. According to some embodiments, the carbon content of the polishing component 128 is greater than 90% by weight.
According to some embodiments, the polishing component 128 comprises glass. According to some embodiments, the polishing component 128 comprises glass fiber. According to some embodiments, the polishing component 128 comprises plastic. According to some embodiments, the polishing component 128 comprises plastic fiber. According to some embodiments, the polishing component 128 comprises a composite of at least one of carbon, glass, or plastic. According to some embodiments, the polishing component 128 comprises a plurality of at least one of carbon fibers, glass fibers, or plastic fibers.
According to some embodiments, the polishing component 128 is turbostratic. According to some embodiments, the polishing component 128 is graphitic. According to some embodiments, the polishing component 128 is a hybrid structure with both graphitic and turbostratic components.
According to some embodiments, the diameter of the polishing component 128 is less than 1 micrometer (mm). According to some embodiments, the diameter of the polishing component 128 is greater than 1 mm and less than 120 mm. According to some embodiments, the diameter of the polishing component 128 is less than the diameter of the reinforcement component 130. According to some embodiments, the polishing component comprises multiple components having a diameter that is less than the diameter of the reinforcement component 130.
According to some embodiments, the reinforcement component 130 is a single component. According to some embodiments, the reinforcement component 130 is comprised of more than one component. According to some embodiments, the reinforcement component 130 is comprised of two or more intertwined components. According to some embodiments, the reinforcement component 130 is comprised of two or more distinct components. According to some embodiments, the reinforcement component 130 is composite matter.
According to some embodiments, the reinforcement component 130 has properties that are similar to the properties of the polishing component 128. According to some embodiments, the reinforcement component 130 has properties that are different from the properties of the polishing component 128. According to some embodiments, the reinforcement component 130 is inflexible. According to some embodiments, the reinforcement component 130 is marginally flexible. According to some embodiments, the reinforcement component 130 is rigid. According to some embodiments, the reinforcement component 130 is predominantly rigid. According to some embodiments, the reinforcement component 130 is more rigid than the polishing component 128. According to some embodiments, the reinforcement component 130 is less brittle than the polishing component 128. According to some embodiments, the reinforcement component 130 is more resistant to fracturing than the polishing component 128.
According to some embodiments, the reinforcement component 130 is resistant to chemicals. According to some embodiments, the reinforcement component 130 uptakes and absorbs little to no moisture. According to some embodiments, the reinforcement component 130 is resistant to heat and maintains mechanical strength and dimension across a broad temperature range. According to some embodiments, the reinforcement component 130 is rigid and resistant to creep, and retains stiffness and strength in a broad range of environmental conditions.
According to some embodiments, the tensile strength of the reinforcement component 130 is greater than 10 ksi and less than 20 ksi. According to some embodiments, the tensile strength of the reinforcement component 130 is greater than 12 ksi and less than 16 ksi.
According to some embodiments, the density of the reinforcement component 130 is greater than 0.5 g/cm3, and less than 3.0 g/cm3. According to some embodiments, the density of the reinforcement component 130 is greater than 1.2 g/cm3 and less than 1.4 g/cm3.
According to some embodiments, the modulus of elasticity of the reinforcement component 130 is greater than 0.25 Msi and less than 1 Msi. According to some embodiments, the modulus of elasticity of the reinforcement component 130 is greater than 0.5 Msi and less than 0.6 Msi.
According to some embodiments, the reinforcement component 130 is chemical resistant. According to some embodiments, the reinforcement component 130 remains stable at temperatures above 300° Fahrenheit. According to some embodiments, the coefficient of thermal expansion of the reinforcement component 130 is positive.
According to some embodiments, the reinforcement component 130 comprises a polymer. According to some embodiments, the reinforcement component 130 comprises a semi-crystalline thermoplastic. According to some embodiments, the reinforcement component 130 comprises polyetheretherketone (PEEK).
According to some embodiments, the protrusion 102 comprises a polishing component 128 comprising carbon, carbon crystals, or carbon fibers, and a reinforcement component 130 comprising a polymer, semi-crystalline thermoplastic, or PEEK.
According to some embodiments, the diameters D1, D2, and D3 of the reinforcement components 130x, 130y, and 130z are greater than 1 mm and less than 120 mm. According to some embodiments, the diameters D1, D2, and D3 of the reinforcement components 130x, 130y, and 130z are inversely proportional to the number of protrusions 102 that together are attached to the base 104. According to some embodiments, the greater the diameters D1, D2, and D3, the fewer the number of protrusions 102 that are together attached to the base 104. According to some embodiments, the lesser the diameters D1, D2, and D3, the greater the number of protrusions 102 that are together attached to the base 104. According to some embodiments, reinforcement components 130x, 130y, and 130z having diameters D1, D2, and D3 within a range of 1 mm to 120 mm provides for a quantity of protrusions 102 attached to the base 104 to amply conditioning of a polishing pad by the polishing pad conditioning apparatus 100.
According to some embodiments, the diameters D1, D2, and D3 of the reinforcement components 130x, 130y, and 130z are the same. According to some embodiments, the diameters D1, D2, and D3 of the reinforcement components 130x, 130y, and 130z are different. According to some embodiments, some reinforcement components have a first diameter, and some other reinforcement components have a second diameter. According to some embodiments, the first diameter is different than the second diameter. According to some embodiments, some reinforcement components have a first diameter, some other reinforcement components have a second diameter, and yet some other reinforcement components have a third diameter. According to some embodiments, the first diameter is different than the second diameter, and the third diameter is different than the first and second diameters.
According to some embodiments, the differences (d1, d2, and d1+d2) in the initial lengths among protrusions 102x, 102y, and 102z are greater than 0.1 mm and less than 20 mm. According to some embodiments, differences in initial lengths that are greater than 0.1 mm and less than 20 mm provide that a next-lower length protrusion 102y will contact a polishing pad prior to a longer protrusion 102x wearing down and becoming ineffective at conditioning a polishing pad, so that at least some protrusions remain in contact with polishing pad. According to some embodiments, some protrusions among several protrusions are of a first length and some other protrusions among the several protrusions are of a second length. According to some embodiments the first length is different than the second length. According to some embodiments, some protrusions among several protrusions are of a first length, some other protrusions among the several protrusions are of a second length, and yet some other protrusions among the several protrusions are of a third length. According to some embodiments, the first length is different than the second length, and the third length is different than the first length and the second length.
According to some embodiments the difference in length d1 among some protrusions of several protrusions is different than the difference in length d2 among some other protrusions of the several protrusions. According to some embodiments, d1≠d2.
According to some embodiments, the wafer polishing apparatus 800 includes a loading plate unit 816 configured to secure wafers for polishing. According to some embodiments, the loading plate unit 816 includes a holding unit 818 configured to hold a stack of wafers. According to some embodiments, the undersides of the four polishing head units 808 are configured to secure thereto wafers from the holding unit 818. According to some embodiments, the undersides of the four polishing head units 808 include chucks (not shown) configured to secure a top wafer from the holding unit 818. According to some embodiments, the wafer polishing apparatus 800 is configured to rotate the four support structures 814 by 90-degree increments about the point of rotation 820 in a clockwise or counterclockwise direction.
According to some embodiments, the wafer polishing apparatus 800 is configured to receive a wafer or stack of wafers at the holding unit 818. According to some embodiments, the holding unit 818 and the four polishing head units 808 are configured to transfer a wafer from the holding unit 818 to the undersides of the four polishing head units 808 located at loading station LD. According to some embodiments, the wafer polishing apparatus 800 is configured to rotate the four support structures 814 in a clockwise or counterclockwise direction to transport the wafers from station LD, to stations A, B, and C, and back to station LD. According to some embodiments, a loaded wafer is polished at stations A, B, and C. According to some embodiments, a loaded wafer is polished at one of stations A, B, or C. According to some embodiments, a loaded wafer is polished at one or more of stations A, B, or C.
According to some embodiments, the three plates 802 are configured to rotate about an axis, thereby rotating the three wafer polishing pads 804 that are secured to the three plates 802. According to some embodiments, the three slurry injection units 806 are configured to supply slurry to the three wafer polishing pads 804. According to some embodiments, the four polishing head units 808 are configured to press wafers against the three wafer polishing pads 804. According to some embodiments, the four polishing head units 808 are configured to rotate the wafers against the three wafer polishing pads 804. According to some embodiments, the wafer polishing apparatus 800 is configured to pivot the three support arms 812 and rotate the three polishing pad conditioning apparatuses 100 to condition the three wafer polishing pads 804.
According to some embodiments, a mechanical, electrical, magnetic, or other suitable based power and transmission system is coupled to the plate 802 and configured to rotate the plate 802 in at least one of a clockwise or a counterclockwise direction about center point 904. According to some embodiments, the proximate end to the pivot point 908 of the support arm 812 is coupled to a mechanical, electrical, magnetic, or other suitable based power and transmission system that is configured to pivot the support arm 812 about pivot point 908 in alternating directions. According to some embodiments, the conditioning apparatus 900 is configured to rotate the polishing pad conditioning apparatus 100 in at least one of a clockwise or a counterclockwise direction about center point 912. According to some embodiments, the conditioning apparatus 900 is configured to simultaneously rotate the plate 802, pivot the support arm 812, and rotate the polishing pad conditioning apparatus 100. According to some embodiments, a polishing pad fitted or attached to the plate 802 is conditioned by at least one of the rotating plate 802, the pivoting support arm 812, or the rotating polishing pad conditioning apparatus 100.
According to some embodiments, an apparatus for conditioning a semiconductor wafer polishing pad includes a base, a fiber, and a polymer protruding from a surface of the base and encompassing the fiber.
According to some embodiments, an apparatus for conditioning a semiconductor wafer polishing pad includes a base and a first protrusion protruding from a surface of the base. According to some embodiments, a first portion of the first protrusion comprises a polymer and a second portion of the first protrusion comprises carbon.
According to some embodiments, an apparatus for conditioning a semiconductor wafer polishing pad includes a base, a first cluster of protrusions protruding from a surface of the base at a first location on the base, and a second cluster of protrusions protruding from the surface of the base at a second location on the base, different than the first location on the base.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Although the subject matter has been described in language specific to structural features or methodological acts, it is to be understood that the subject matter of the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing at least some of the claims.
Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
It will be appreciated that layers, features, elements, etc. depicted herein are illustrated with particular dimensions relative to one another, such as structural dimensions or orientations, for example, for purposes of simplicity and ease of understanding and that actual dimensions of the same differ substantially from that illustrated herein, in some embodiments.
Moreover, “exemplary” is used herein to mean serving as an example, instance, illustration, etc., and not necessarily as advantageous. As used in this application, “or” is intended to mean an inclusive “or” rather than an exclusive “or”. In addition, “a” and “an” as used in this application and the appended claims are generally to be construed to mean “one or more” unless specified otherwise or clear from context to be directed to a singular form. Also, at least one of A and B and/or the like generally means A or B or both A and B. Furthermore, to the extent that “includes”, “having”, “has”, “with”, or variants thereof are used, such terms are intended to be inclusive in a manner similar to the term “comprising”. Also, unless specified otherwise, “first,” “second,” or the like are not intended to imply a temporal aspect, a spatial aspect, an ordering, etc. Rather, such terms are merely used as identifiers, names, etc. for features, elements, items, etc. For example, a first element and a second element generally correspond to element A and element B or two different or two identical elements or the same element.
Also, although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others of ordinary skill in the art based upon a reading and understanding of this specification and the annexed drawings. The disclosure comprises all such modifications and alterations and is limited only by the scope of the following claims. In particular regard to the various functions performed by the above described components (e.g., elements, resources, etc.), the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure. In addition, while a particular feature of the disclosure may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.
This application claims priority to U.S. Provisional Patent Application 62/894,656, titled “SEMICONDUCTOR CHEMICAL MECHANICAL POLISHING (CMP) WITH COMPOSITE MATERIAL” and filed on Aug. 30, 2019, which is incorporated herein by reference.
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