Claims
- 1. A polishing pad for polishing a substrate in a chemical mechanical polishing apparatus, comprising:
- a first polishing region having a first plurality of substantially circular concentric grooves with a first width and a first pitch;
- a second polishing region surrounding the first polishing region and having a second plurality of substantially circular concentric grooves with a second width and a second pitch; and
- wherein at least one of the second width and second pitch differs from the first width and first pitch.
- 2. The polishing pad of claim 1, further comprising a third polishing region surrounding the second polishing region and having a third plurality of substantially circular concentric grooves with a third width and a third pitch.
- 3. The polishing pad of claim 2, wherein the third width and pitch are equal to the first width and pitch, respectively.
- 4. The polishing pad of claim 1, wherein each groove of the first and second pluralities of grooves has a depth of at least about 0.02 inches, a width of at least about 0.015 inches, and a pitch of at least about 0.09 inches.
- 5. The polishing pad of claim 4, wherein each groove of the first and second pluralities of grooves has a depth between about 0.02 and 0.05 inches.
- 6. The polishing pad of claim 4, wherein each groove of the first and second pluralities of grooves has a width between about 0.015 and 0.04 inches.
- 7. The polishing pad of claim 4, wherein each groove of the first and second pluralities of grooves has a pitch between about 0.09 and 0.24 inches.
- 8. The polishing pad of claim 1, wherein the first plurality of grooves are separated by a first plurality of annular partitions and the second plurality of grooves are separated by a second plurality of annular partitions.
- 9. The polishing pad of claim 8, wherein the first plurality of partitions cover about 75% of a surface area of the first polishing region and the second plurality of partitions cover about 50% of a surface area of the second polishing region.
- 10. A polishing pad to polish a substrate in a chemical mechanical polishing apparatus, comprising:
- a first polishing region having a first plurality of substantially circular concentric grooves with a first width and a first pitch;
- a second polishing region surrounding the first polishing region and having a second plurality of substantially circular concentric grooves with a second width and a second pitch;
- a third polishing region surrounding the second polishing region and having a third plurality of substantially circular concentric grooves with a third width and a third pitch;
- wherein at least one of the second width and second pitch differs from the first width and first pitch;
- wherein the third width and pitch are equal to the first width and pitch, respectively; and
- wherein the first pitch is larger than the second pitch.
- 11. The polishing pad of claim 10, wherein the first pitch is about two times larger than the second pitch.
- 12. A polishing pad to polish a substrate in a chemical mechanical polishing apparatus, comprising:
- a first polishing region having a first plurality of substantially circular concentric grooves with a first width and a first pitch;
- a second polishing region surrounding the first polishing region and having a second plurality of substantially circular concentric grooves with a second width and a second pitch;
- a third polishing region surrounding the second polishing region and having a third plurality of substantially circular concentric grooves with a third width and a third pitch;
- wherein at least one of the second width and second pitch differs from the first width and first pitch;
- wherein the third width and pitch are equal to the first width and pitch, respectively; and
- wherein the first width is less than the second width.
- 13. The polishing pad of claim 12, wherein the second width is about six time greater than the first width.
- 14. A polishing pad to polish a substrate in a chemical mechanical polishing apparatus, comprising:
- a first polishing region having a first plurality of substantially circular concentric grooves with a first width and a first pitch; and
- a second polishing region surrounding the first polishing region and having a second plurality of substantially circular concentric grooves with a second width and a second pitch, wherein the second pitch differs from the first pitch.
- 15. A polishing pad to polish a substrate in a chemical mechanical polishing apparatus, comprising:
- a first polishing region having a first plurality of substantially circular concentric grooves with a first width and a first pitch; and
- a second polishing region surrounding the first polishing region and having a second plurality of substantially circular concentric grooves with a second width and a second pitch, wherein the second width differs from the first width.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of U.S. application Ser. No. 08/856,948 now U.S. Pat. No. 5,921,855, filed May 15, 1997, the entire disclosure of which is incorporated herein by reference.
US Referenced Citations (16)
Continuation in Parts (1)
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Number |
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856948 |
May 1997 |
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