Claims
- 1. A cleaning solution for cleaning copper-containing microelectronic substrates, the cleaning solution comprising:
0.05 wt % to 12.4 wt % a quaternary ammonium hydroxide selected from the group consisting of tetraalkylammonium hydroxide, where the alkyl contains C atoms numbered from 1 to 10, and combinations thereof, 0.2 wt % to 27.8 wt % a polar organic amine selected from the group consisting of monoethanolamine, aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, diethanolamine, triethanolamine, C2-C5 alkanolamines, and combinations thereof, 0.0 wt % to 1.0 wt % of an organic acid being gallic acid in an effective amount of a corrosion inhibitor selected from the group consisting of ascorbic acid (Vitamin C), L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, catechol, pyrogallol, resorcinol, hydroquinone, benzotriazole, citric acid, ethylenediamine tetraacetitic acid (EDTA), and combinations thereof, balance deionized water and; wherein the alkalinity of the solution is greater than 0.073 milliequivalents base per gram.
- 2. A cleaning solution for cleaning copper-containing microelectronic substrates, the cleaning solution comprising:
1. 0.05 to 12.4 wt % tetramethylammonium hydroxide; 2. 0.2 to 27.8 wt % monoethanolamine; 3. 0.1 to 4 wt % gallic acid; 4. 0.2 to 10.9% ascorbic acid and 5. deionized water, wherein the alkalinity of the solution is greater than 0.073 milliequivalents base per gram.
- 3. The cleaning solution of claim 2, wherein the alkalinity of the solution is greater than 0.073 milliequivalents base per gram.
- 4. A cleaning solution of claim 1, wherein said corrosion inhibitor is selected from the group consisting of ascorbic acid, L-ascorbic acid, isoascorbic acid and ascorbic acid derivatives.
- 5. A cleaning solution for CMP cleaning, consisting essentially of 0.05 wt % to 1.25 wt % tetramethylammonium hydroxide, 0.2 wt % to about 2.25 monoethanolamine, 0.1 to wt % 1 wt % gallic acid; and an effective amount of ascorbic acid, balance water.
- 6. A via cleaning solution consisting essentially of 1.8 wt % to 12.4 wt % tetramethylammonium hydroxide, 2.0 wt % to about 27.8 monoethanolamine, 0.1 to wt % 4 wt % gallic acid; 0.2 wt % to 10.9% ascorbic acid, balance water.
- 7. A cleaning solution for microelectronic substrates consisting essentially of:
from 1.5 wt % to 12.5 wt % of a concentrate consisting of 1.8 wt % to 12.4 wt % of quaternary ammonium hydroxide wherein the alkyl contains one of C1 through C10 atoms or combinations of C1 through C10 atoms, 2.0 wt % to 27.8 wt % of a polar organic amine selected from the group consisting of monoethanolamine, aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, diethanolamine, triethanolamine, C2-C5 alkanolamines, and mixtures thereof; 0 wt % to 4 wt % of gallic acid 1.0 wt % to 10.9 wt % corrosion inhibitor selected from the group ascorbic acid (Vitamin C), L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, citric acid, ethylenediamine tetraacetic acid, benzotriazole, and combinations thereof, balance water; and, 87.5 wt % to 98.5 wt % deionized water, with the alkalinity of the solution being greater than 0.073 milliequivalents base per gram.
- 8. A cleaning solution for cleaning copper-containing microelectronic substrates, the cleaning solution consisting of 1.5 wt % to 12.5 wt % of a concentrate consisting of 1.8 to 12.4 wt % tetramethylammonium hydroxide, 2 to 27.8 wt % monoethanolamine 0.1 to 4.0 wt % gallic acid 1.0 to 10.9 wt % ascorbic acid, balance water, and 87.5 to 98.5 wt % deionized water, the solution having an alkalinity greater than 0.073 milliequivalents base per gram of solution.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S. patent application Ser. No. 09/587,883 filed Jun. 6, 2000, which is a continuation-in-part of U.S. patent application Ser. No. 09/440,917 filed Nov. 16, 1999.
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
09587883 |
Jun 2000 |
US |
Child |
09781859 |
Feb 2001 |
US |
Parent |
09440917 |
Nov 1999 |
US |
Child |
09587883 |
Jun 2000 |
US |