1. Field of the Invention
The present invention relates to a power management device of an SD (Secure Digital) memory card reader, and more particularly, to a power management device of an SD memory card reader capable of controlling power by a single control pin.
2. Description of the Prior Art
Generally, a user can access data stored in an SD (Secure Digital) memory card by a card reader. SD (Secure Digital) memory card specification 2.0 sets the memory card voltage as 3.3V, while SD memory card specification 3.0 sets the memory card voltage as 1.8V. To be compatible with both SD memory card specifications 3.0 and 2.0, a card reader initially provides a memory card voltage with voltage level at 3.3V to the SD memory card inserted into the card reader, then sends a request to inquire the SD memory card whether it supports the SD memory card specification 3.0. If the SD memory card answers positively, the card reader switches the memory card voltage to 1.8V.
Summarizing the above, power management device 100 of the SD memory card reader of the prior art needs two control pins SDEN1 and SEDN2 for receiving external control signals in order to comply with both the SD memory card specifications 2.0 and 3.0. Moreover, two switches 110 and 131, costly power devices, are needed to switch the memory card voltage between voltage levels of 1.8V and 3.3V. Both switches 133 and 142 are for discharging of power output end VCP, redundantly. Therefore, the above arrangement increases the cost of the power management device and the card reader.
It is therefore an objective of the claimed invention to provide a power management device of an SD memory card reader capable of controlling power by a single control pin in order to solve the problems of the prior art.
The present invention provides a power management device, which is capable of charging a load capacitor for providing a memory card voltage, comprising an output transistor, a feedback circuit, a selection circuit, and a controller. The output transistor is electrically connected to an input voltage source, and the output transistor has a control end for charging the load capacitor according to a first control signal or a second control signal. The feedback circuit is electrically connected to the load capacitor for generating the first control signal according to the memory card voltage. The selection circuit selects the first control signal or the second control signal to be received by the output transistor according to a switch signal. The controller generates the switch signal according to an external control signal. Wherein when the output transistor receives the first control signal, the memory card voltage is regulated at a relatively-low level, and when the output transistor receives the second control signal, the memory card voltage is regulated at a relatively-high level.
The present invention further provides a power management device, which is capable of charging a load capacitor for providing a memory card voltage, comprising a power input end, a power output end, a power supply regulator, a control pin, and a controller. The power input end is electrically connected to an input voltage source. The power output end is electrically connected to the load capacitor. The power supply regulator is electrically connected between the power input end and the power output end for providing the memory card voltage. The controller is electrically connected between the control pin and the power supply regulator for controlling the memory card voltage according to an external control signal transmitted from the control pin. Wherein when the external control signal denotes an enable state, the power supply regulator provides the memory card voltage; when the external control signal denotes a disable state, the power supply regulator stops providing the memory card voltage, and discharges the load capacitor; and when the external control signal returns to the enable state from the disable state in a predetermined duration, the power supply regulator changes the memory card voltage.
The present invention further provides a method for controlling a memory card voltage according to a control pin of a power management device, wherein the power management device comprises a power supply regulator and a controller, the power supply regulator is electrically connected between a power input end and a power output end for providing the memory card voltage, and the controller is electrically connected between a control pin and the power supply regulator for controlling the memory card voltage according to an external control signal transmitted from the control pin, the method comprises the power supply regulator providing the memory card voltage when the external control signal denotes an enable state; the power supply regulator stopping providing the memory card voltage and discharging the load capacitor when the external control signal denotes a disable state; and the power supply regulator changing the memory card voltage when the external control signal returns to the enable state from the disable state in a predetermined duration.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
Power supply regulator 206 comprises an output transistor 210, a feedback circuit 220, a selection circuit 230, and a discharge circuit 240. Output transistor 210 is electrically connected to the 3.3V input voltage source via power input end VIP, and output transistor 210 has a control end G for charging load capacitor 202 according to control signal SL or control signal SH. In the present embodiment, output transistor 210 is a PMOS transistor. Control signal SL makes output transistor 210 provide at power output end VCP a memory card voltage of 1.8V, and control signal SH makes output transistor 210 provide a memory card voltage of 3.3V. Feedback circuit 220 is electrically connected to load capacitor 202 for generating control signal SL according to the memory card voltage. Feedback circuit 220 comprises an operational amplifier 221 and resistors 222 and 223. Resistors 222 and 223 form a voltage divider circuit for generating a feedback voltage VFB proportional to the memory card voltage provided at power output end VCP. Operational amplifier 221 generates control signal SL after comparing feedback voltage VFB with a reference voltage VREF to dynamically control charging of load capacitor 202 by output transistor 210 and set the memory card voltage provided at power output end VCP to 1.8V. Selection circuit 230 selects a first control signal SL or a second control signal SH to be received by output transistor 210 according to a switch signal S1. Discharge circuit 240 is electrically connected to load capacitor 202 for discharging load capacitor 202 according to a discharge signal S2 generated by controller 204. Discharge circuit 240 comprises a resistor 241 and a transistor 242. When transistor 242 is turned on, load capacitor 202 is electrically connected to a ground end for discharging via resistor 241.
Please refer to
If the SD memory supports the SD memory card specification 3.0, SD memory could positively answers the inquiry from the card reader, which correspondingly generates a pulse to the external control signal. When power management device 200 recognizes from control pin SDEN that, as shown in the beginning of time section t2, the external control signal switches to the disable state (at the low logic level) from the enable state (at the high logic level) and quickly in a predetermined duration returns back to the disable state, switch signal S1 is altered and renders selection circuit 230 to electrically connect the first end 1 to the second end 2, in order to electrically connect control end G of output transistor 210 to feedback circuit 220 for receiving control signal SL from feedback circuit 220. Therefore, the memory card voltage provided at power output end VCP is regulated at a lower level (1.8V). As shown in
When the card reader senses that the SD memory card is pulled out, it switches the external control signal to remain at a low logic level, denoting the disable state, and selection circuit 230 electrically connects the first end 1 to the fourth end 4 according to switch signal S1 of controller 204, electrically connecting control end G of output transistor 210 to source end S and equivalently shutting down output transistor 210. In addition, controller 204 further asserts discharge signal S2 such that transistor 242 in discharge circuit 240 is turned on to discharge load capacitor 202 to the ground end via resistor 241. As shown in
Summarizing the above, the exemplified power management device of the card reader comprises a power supply regulator and a controller. The controller controls the memory card voltage according to the external control signal transmitted from the single control pin. When the external control signal substantially denotes an enable state, the power supply regulator provides the memory card voltage. When the external control signal substantially denotes a disable state, the power supply regulator stops providing the memory card voltage. When the external control signal goes to the disable state and back to the enable state in the predetermined duration, the power supply regulator changes the memory card voltage. Therefore, the power management device of the card reader of the present invention needs only one single control pin to achieve the enable state, discharge the load capacitor, and dynamically control the voltage of the SD memory card, complying with both SD memory card specifications 2.0 and 3.0. The exemplified power management device further possesses the soft-start function and built-in discharge path. Moreover, the present invention simplifies the circuit of the power management device for saving cost and space.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention.
Number | Date | Country | Kind |
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099144181 | Dec 2010 | TW | national |