“Selective-area low-pressure MOCVD of GalnAsP and related materials on planar InP substrates”, M. Gibbon et al., Semiconductor Sci. Technol., vol. 8, pp. 998-1010 (no month given), 1993.* |
“Integrated optoelectronic devices by selective-area epitaxy”, A.M. Jones et al., SPIE, vol. 2918, pp. 145-154, Nov. 1996.* |
“Selective-Area Low-Pressure MOCVD of GaInAsP and Related Materials on Planar InP Substrates”, by Gibbon, M. et al. Semiconductor Sci. Technol., pp. 998-1010 (1993). |
“Integrated Optoelectric Devices by Selective-Area Epitaxy”, by Jones, A. M. et al., SPIEvol. 2918, pp. 145-154 (Nov. 18-19, 1996). |
“Selective and Non-Planar Epitaxy of InP, GaInAs and GaInAsP Using Low Pressure MOCVD”, by Thrush, R. E. et al., Journal of Crystal Growth,124, pp. 249-254 (1992). |
“Simultaneous Thickness and Compositional Uniformity in Selective MOVPE Growth”, by Ekawa, M, et al., Fujitsu Laboratories Ltd., pp. 337-340. No Date. |