Claims
- 1. A process for forming a deposited film on a substrate in a deposition space (A) which comprises:
- (i) forming a plurality of different precursors in a plurality of activation spaces (B) from gaseous materials for forming the deposited film;
- (ii) forming an active species in an activations space (C), said active species capable of reacting with at least two of said precursors at different reaction rates; and
- (iii) introducing said plurality of precursors and said active species into said deposition space (A) so as to form a mixture and effect film formation, wherein said plurality of precursors are introduced such that one of said precursors which reacts with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with another of said precursors which reacts with said active species at a higher reaction rate.
- 2. The process of claim 1 wherein said precursors are allowed to pass through said activation space (C) in a manner so as to prevent the contact of said precursors with said active species.
- 3. The process of claim 1 wherein said precursor of lower reaction rate and said precursor of higher reaction rate are mixed with the same kind of active species individually in different spaces.
- 4. The process of any of claims 1-3 wherein said active species is H active species, said precursor of lower reaction rate is SiX.sub.n (X is halogen; n=1, 2 or 3), and said precursor of higher reaction rate is GeX.sub.m (m=1, 2 or 3).
- 5. The process of any of claims 1-3 wherein said active species is H active species, said precursor of lower reaction rate is SiX.sub.n (X is halogen; n=1, 2 or 3), and said precursor of higher reaction rate is CX.sub.m (m=1, 2 or 3).
- 6. The process of claim 4 or 5 wherein X is F.
- 7. The process of claim 1 wherein a starting gas containing an impurity controlling electrical conduction type is further introduced into the activation space (B) or (C), said impurity including atoms selected from the group consisting of Group III and Group V elements.
- 8. A process for forming a deposited film on a substrate in a deposition space (A) which comprises:
- (i) activating a first gaseous material in an activation space (B.sub.1);
- (ii) activating a second gaseous material in an activation space (B.sub.2);
- (iii) activating a third gaseous material in an activation space (C); and
- (iv) mixing the activated first gaseous material and the activated second gaseous material with the activated third gaseous material in order to react said activated third gaseous material with one of said activated first and second gaseous materials at a lower reaction rate at an upper stream position as compared to the other of said first and second activated gaseous materials which reacts with said active species at a higher reaction rate.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-202007 |
Aug 1986 |
JPX |
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61-202019 |
Aug 1986 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/089,758 filed Aug. 27, 1987, now abandoned.
US Referenced Citations (16)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0074212 |
Mar 1983 |
EPX |
60-41047 |
Mar 1985 |
JPX |
2148328 |
May 1985 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
89758 |
Aug 1987 |
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