This application is related to U.S. patent application Ser. No. 09/499,096, entitled PROCESS FOR FORMING SHAPED GROUP III-V SEMICONDUCTOR NANOCRYSTALS, AND PRODUCT FORMED USING PROCESS, which was filed on Feb. 4, 2000, and is assigned to the assignee of this invention.
The invention described herein arose in the course of, or under, Contract No. DE-AC03-SF00098 between the United States Department of Energy and the University of California for the operation of the Ernest Orlando Lawrence Berkeley National Laboratory. The Government may have rights to the invention.
Number | Name | Date | Kind |
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5262357 | Alivisatos et al. | Nov 1993 | |
5505928 | Alivisatos et al. | Apr 1996 | |
5537000 | Alivisatos et al. | Jul 1996 | |
5751018 | Alivisatos et al. | May 1998 |
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Dabbousi, B.O., et al., “(CdSe) ZnS Core-Shell Quantum Dots: Synthesis and Characterization of a Size Series of Highly Luminescent Nanocrystal -lites”, Journal of Physical Chemistry B,vol. 101, 1997, pp. 9463-9475. |
Peng, Xiaogang, et al., “Epitaxial Growth of Highly Luminescent CdSe/CdS Core/Shell Nanocrystals with Photostability and Electronic Accessibility”, Journal of the American Chemical Society, vol. 119, No. 30, pp. 7019-7029. |
Bruchez, M., Jr., et al., “Semiconductor Nanocrystals as Fluorescent Biological Labels”, Science, 281, Sep. 25, 1998, pp. 2013-2016. |
Han, W., et al., “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction”, Science, 277, Aug. 29, 1997, pp. 1287-1289. |
Huynh, W.U., et al., “CdSe Nanocrystal Rods/Poly (3-hexylthiophene) Composite Photovoltaic Devices”, Advanced Materials, 11, 1999, pp. 923-927. |
Kabay, N., et al., “Removal of Metal Pollutants (Cd(II) and Cr (III)) from Phosphoric Acid Solutions by Chelating Resins Containing Phosphonic or Diphosphonic Groups”, Industrial & Engineering Chemistry Research, 37, 1998, pp. 2541-2547. |
Kolosky, M., et al., “Determination of Trioctylphosphine Oxide and Its Impurities by Reversed-Phase High-Performance Liquid Chromatography”, Journal of Chromatography, 299, 1984, pp. 436-444. |
Lieber, C.M., “One-Dimensional Nanostructures: Chemistry, Physics & Applications”, Solid State Communications, 107, (11) , 1998, pp. 607-616. |
Murray, C.B., et al., “Synthesis and Characterization of Nearly Monodisperse CdE (E=S, Se, Te) Semiconductor Nanocrystallites”, Journal of the American Chemical Society, 115, 1993, pp. 8706-8715. |
Peng, X., et al., “Kinetics of II-VI and III-V Colloidal Semiconductor Nanocrystal Growth: ‘Focusing’ of Size Distributions”, Journal of the American Chemical Society, 120, 1998, pp. 5343-5344. |
Routkevitch, D., et al., “Electrochemical Fabrication of CdS Nanowire Arrays in Porous Anodic Aluminum Oxide Templates”, Journal of Physical Chemistry, 100, 1996, pp. 14037-14047. |
Schlamp, M.C., et al., “Improved Efficiencies in Light Emitting Diodes Made with CdSe (CdS) Core/Shell Type Nanocrystals and a Semiconducting Polymer”, Journal of Applied Physics, 82, (11), Dec. 1, 1997, pp. 5837-5842. |
Wang, W., et al., “Synthesis and Characterization of MSe (M=Zn, Cd) Nanorods by a New Solvothermal Method”, Inorganic Chemistry Communications, 2, 1999, pp. 83-85. |