Group 12/16 materials

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H01L21/02551

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02551Group 12/16 materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having trench structure in which propagation o...
- Patent number 12,211,899
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Hyung-jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional semiconductor based printable optoelectronic inks,...
- Patent number 12,183,574
- Issue date Dec 31, 2024
- Northwestern University
- Mark C. Hersam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 12,046,471
- Issue date Jul 23, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional semiconductor based printable optoelectronic inks,...
- Patent number 11,830,735
- Issue date Nov 28, 2023
- Northwestern University
- Mark C. Hersam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 11,710,794
- Issue date Jul 25, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro Sato
- G02 - OPTICS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 11,502,171
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 11,261,537
- Issue date Mar 1, 2022
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a group iii-v semiconductor layer co...
- Patent number 11,081,346
- Issue date Aug 3, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 10,941,487
- Issue date Mar 9, 2021
- ASM IP Holding B.V.
- Viljami Pore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,937,864
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic devices and method of manufacturing
- Patent number 10,896,991
- Issue date Jan 19, 2021
- First Solar, Inc.
- Changming Jin
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device
- Patent number 10,886,413
- Issue date Jan 5, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositions comprising epitaxial nanowires on graphene substrates...
- Patent number 10,861,696
- Issue date Dec 8, 2020
- Norwegian University of Science and Technology
- Helge Weman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,651,273
- Issue date May 12, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 10,619,244
- Issue date Apr 14, 2020
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dual-material mandrel for epitaxial crystal growth on silicon
- Patent number 10,615,178
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,483,279
- Issue date Nov 19, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Tianchun Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device comprising nanogap electrodes and nanoparticle
- Patent number 10,475,594
- Issue date Nov 12, 2019
- Nexdot
- Emmanuel Lhullier
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 10,472,734
- Issue date Nov 12, 2019
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaic devices and method of manufacturing
- Patent number 10,367,110
- Issue date Jul 30, 2019
- First Solar, Inc.
- Changming Jin
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device
- Patent number 10,361,318
- Issue date Jul 23, 2019
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting device doped with boron
- Patent number 10,326,054
- Issue date Jun 18, 2019
- RayVio Corporation
- Yitao Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...
- Publication number 20240371635
- Publication date Nov 7, 2024
- Northwestern University
- Mark C. HERSAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230352302
- Publication date Nov 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230317857
- Publication date Oct 5, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230148397
- Publication date May 11, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230139650
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230137113
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230095501
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230100277
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230090724
- Publication date Mar 23, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...
- Publication number 20210398808
- Publication date Dec 23, 2021
- Northwestern University
- Mark C. HERSAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...
- Publication number 20210343525
- Publication date Nov 4, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20210164101
- Publication date Jun 3, 2021
- ASM IP HOLDING B.V.
- Viljami Pore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210020785
- Publication date Jan 21, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20200291518
- Publication date Sep 17, 2020
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES
- Publication number 20200141027
- Publication date May 7, 2020
- NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
- Bjørn-Ove Fimland
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190341502
- Publication date Nov 7, 2019
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro SATO
- G02 - OPTICS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20190177843
- Publication date Jun 13, 2019
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANOWIRE EPITAXY ON A GRAPHITIC SUBSTRATE
- Publication number 20180254184
- Publication date Sep 6, 2018
- Norwegian University of Science and Technology
- Helge Weman
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180240809
- Publication date Aug 23, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Tianchun Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20180087154
- Publication date Mar 29, 2018
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180053856
- Publication date Feb 22, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro SATO
- G02 - OPTICS
Information Patent Application
DESIGN AND SYNTHESIS OF METAL OXIDE SURFACES AND INTERFACES WITH CR...
- Publication number 20180019122
- Publication date Jan 18, 2018
- University of Kentucky Research Foundation
- Beth S. Guiton
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE LAYE...
- Publication number 20170352532
- Publication date Dec 7, 2017
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS
- Publication number 20170317171
- Publication date Nov 2, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE ASPECT RATIO TRAPPING
- Publication number 20170250074
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Universal Methodology to Synthesize Diverse Two-Dimensional Heteros...
- Publication number 20170170260
- Publication date Jun 15, 2017
- Massachusetts Institute of Technology
- Mildred S. Dresselhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ASSEMBLIES WITH FLEXIBLE SUBSTRATES
- Publication number 20170011912
- Publication date Jan 12, 2017
- Niloy MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH
- Publication number 20160362813
- Publication date Dec 15, 2016
- Applied Materials, Inc.
- Xinyu BAO
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE AND METHOD TO FORM III-V, Ge AND SiGe FINS ON INSULATOR
- Publication number 20160322228
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS

Group 12/16 materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having trench structure in which propagation o...

Two-dimensional semiconductor based printable optoelectronic inks,...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Two-dimensional semiconductor based printable optoelectronic inks,...

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Semiconductor device

Synthesis and use of precursors for ALD of group VA element contain...

Leakage-free implantation-free ETSOI transistors

III-V or II-VI compound semiconductor films on graphitic substrates

Semiconductor structure having a group iii-v semiconductor layer co...

Synthesis and use of precursors for ALD of group VA element contain...

Leakage-free implantation-free ETSOI transistors

Photovoltaic devices and method of manufacturing

Semiconductor device

Compositions comprising epitaxial nanowires on graphene substrates...

Leakage-free implantation-free ETSOI transistors

Synthesis and use of precursors for ALD of group VA element contain...

Dual-material mandrel for epitaxial crystal growth on silicon

Method of manufacturing a semiconductor device

Electronic device comprising nanogap electrodes and nanoparticle

III-V or II-VI compound semiconductor films on graphitic substrates

Photovoltaic devices and method of manufacturing

Semiconductor device

Ultraviolet light emitting device doped with boron

Patents Applicationslast 30 patents

TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...

Optimized Heteroepitaxial Growth of Semiconductors

SEMICONDUCTOR DEVICE

Optimized Heteroepitaxial Growth of Semiconductors

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

Optimized Heteroepitaxial Growth of Semiconductors

TWO-DIMENSIONAL SEMICONDUCTOR BASED PRINTABLE OPTOELECTRONIC INKS,...

SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

SEMICONDUCTOR DEVICE

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES

SEMICONDUCTOR DEVICE

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

NANOWIRE EPITAXY ON A GRAPHITIC SUBSTRATE

Method of Manufacturing a Semiconductor Device

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

SEMICONDUCTOR DEVICE

DESIGN AND SYNTHESIS OF METAL OXIDE SURFACES AND INTERFACES WITH CR...

INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE LAYE...

LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS

DOUBLE ASPECT RATIO TRAPPING

Universal Methodology to Synthesize Diverse Two-Dimensional Heteros...

SEMICONDUCTOR ASSEMBLIES WITH FLEXIBLE SUBSTRATES

INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH

STRUCTURE AND METHOD TO FORM III-V, Ge AND SiGe FINS ON INSULATOR