Patent Grant
7533463
This invention relates to a manufacturing process for a printhead used in equipment for forming, through successive scanning operations, black and colour images on a print medium, usually though not exclusively a sheet of paper, by means of the thermal type ink jet technology, and in particular to the head actuating assembly and the associated manufacturing process.
Depicted in
The printer may be a stand-alone product, or be part of a photocopier, of a “plotter”, of a facsimile machine, of a machine for the reproduction of photographs and the like. The printing is effected on a physical medium 46, normally consisting of a sheet of paper, or a sheet of plastic, fabric or similar.
Also shown in
The composition and general mode of operation of a printhead according to the thermal type technology, and of the “top-shooter” type in particular, i.e. those that emit the ink droplets in a direction perpendicular to the actuating assembly, are already widely known in the sector art, and will not therefore be discussed in detail herein, this description instead dwelling more fully on some only of the features of the heads and the manufacturing process, of relevance for the purposes of understanding this invention.
The current technological trend in ink jet printheads is to produce a large number of nozzles per head (≧300), a definition of more than 600 dpi (dpi=“dots per inch”), a high working frequency (≧10 kHz) and smaller droplets (≦10 pl) than those produced in earlier technologies.
Requirements such as these are especially important in colour printhead manufacture and make it necessary to produce actuators and hydraulic circuits of increasingly smaller dimensions, greater levels of precision, and narrow assembly tolerances.
These drawbacks are solved, for instance, by means of the monolithic printhead described in the Italian patent application TO 99A 000610, a section of which parallel to the plane z-x is illustrated in
Another solution is represented, for example, by a monolithic printhead described in the Italian patent application TO 2000A 000335, shown in sectional view in
The whole comprising a chamber 74, a nozzle 56, a resistor 27, a connecting channel 68 and a plurality of elementary ducts 75 is called ejector 73.
Both the solutions also comprise a structural layer 107 in which the nozzles 56 are made using known techniques, such as for instance a laser drilling. These techniques have, however, a drawback described in the following: for the head to work properly, it is necessary for the nozzle 56 to have a truncated cone shape with the greater base towards the inside of the head, and the lesser base towards the outside. This is difficult to obtain using the above-mentioned techniques, whereas a nozzle with a truncated cone shape with the greater base towards the outside or, in the best case, a cylindrical shape nozzle is obtained commonly.
The object of this invention is to produce a monolithic printhead in which the nozzles 56 are truncated cone shape with their greater base towards the inside of the head, and the lesser base towards the outside.
Another object is to produce the nozzles in a precise, reliable, repetitive way and at low cost.
A further object is to obtain greater design freedom and a less critical photolithographic manufacturing process.
Another object is to obtain greater stability of the shape of the parts during the steps of the process which comprise heat proceedings.
These and other objects, characteristics and advantages of the invention will be apparent from the description that follows of a preferred embodiment, provided purely by way of an illustrative, non-restrictive example, and with reference to the accompanying drawings.
FIG. 1—is an axonometric view of an ink jet printer;
FIG. 2—represents an axonometric view of an ink jet printer according to the known art;
FIG. 3—represents a section view of an ejector of a first monolithic printhead, according to the known art;
FIG. 4—represents a section view of an ejector of a second monolithic printhead, according to the known art;
FIG. 5—represents a wafer of semiconductor material, containing dice not yet separated;
FIG. 6—represents the wafer of semiconductor material, in which the dice have been separated;
a and 7b—illustrate the flow of the operations in the manufacturing process according to the invention of the ejector of
FIG. 8—illustrates a section of the ejector of
FIG. 9—illustrates a section of the ejector of
FIG. 10—illustrates a section of the ejector of
FIG. 11—illustrates a section of the ejector of
FIG. 12—illustrates a section of the ejector of
FIG. 13—illustrates a section of the ejector of
FIG. 14—illustrates a section of the ejector of
FIG. 15—illustrates a section of the ejector of
FIG. 16—illustrates a section of the ejector of
FIG. 17—illustrates a section of the ejector of
FIG. 18—illustrates the flow of the operations in a second embodiment of the manufacturing process of the ejector of
The manufacturing process of the ejectors 73 illustrated in
In a first part of the process, not described as it is not essential for the understanding of this invention, when all the dice 61 are still joined in the wafer 60, the microelectronics 62 are produced and at the same time, using the same process steps and the same masks, the microhydraulics 63 of each die 61 are produced in part.
In a second part of the process, on each of the dice 61 still joined in the wafer 60, the structural layers 107 are produced and the microhydraulics 63 completed by means of operations compatible with the first part of the process. At the end of the process, the dice 61 are separated by means of a diamond wheel: the whole made up of a die 61 and a structural layer 107 thus comes to constitute an actuator 50, as can be seen in
The second part of the manufacturing process is described with the aid of the flow diagram of
In a step 200, a silicon wafer 60 is available as it is at the outcome of the first part of the process, comprising a plurality of dice 61 having their microelectronics 62 finished, protected by the protective layer 30 of Si3N4 and SiC upon which the conducting layer 26 is deposited, and arranged for the successive operations in the areas of microhydraulics 63′ suitable for production of the plurality of ejectors 73 constituting the microhydraulics 63.
In a step 201, a protective photoresist 32 is applied on top of the layer 26, in order to protect the whole wafer 60 in the successive operations. Voids are made in the protective photoresist 32 by means of known techniques, to leave the apertures 125 uncovered.
In a step 202, using as the mask the conducting layer 26, elementary holes 75′ are made in correspondence with the apertures 125, for instance by means a “dry etching” technology of the ICP (“Inductively Coupled Plasma”) type, for example, known to those acquainted with the sector art. The holes 75′ are blind holes and partially enter into the substrate 140.
In a step 203, etching is started of the groove 45, again using ICP technology for instance. The portion of the groove 45 made in this stage, indicated as 45′, presents two walls 126 substantially parallel to the plane y-z, and reaches a distance of between 100 and 150 μm, for example, from the N-well layer 36.
In a step 204, the protective photoresist 32 is removed.
In a step 205, on the conducting layer 26 and inside the elementary holes 75′, a first layer is applied of positive photoresist of a thickness equal to the height that the chambers 74 will have, by means for instance of a centrifuge in a process known as “spinner coating”. With a mask not shown in any of the figures, the photoresist is exposed to ultraviolet radiation only in correspondence with windows having the shape of that section parallel to the plane x-y which the future chambers 74 and the future connecting channels 68 will have. Intensity of the ultraviolet radiation is regulated such that the positive photoresist is depolymerized only as far as the conducting layer 26, but not inside the elementary holes 75′. Finally development is effected, during which the portion of depolymerized photoresist is removed, leaving in this way cavities having the shape of the future chambers 74 and of the future connecting channels 68, whereas the elementary holes 75′ are still filled with the positive photoresist, indicated with the shading, which has remained polymerized as it has not been reached by the ultraviolet radiation.
By performing the operations in the order indicated, the advantage is obtained of effecting this step while the groove 45′ and the holes 75′ are not in communication, as they are separated by a layer of silicon of a thickness between, for instance, 100 and 150 μm, and it is therefore not necessary to fill the groove 45′ with a temporary layer protecting the area in which development of the positive photoresist takes place.
In a step 206, electrodeposition is performed of a metal, for example copper, gold or nickel, inside the cavities produced in the step 203, in order to form the sacrificial layers 31, having the shape of the future chambers 74 and of the future connecting channels 68. The positive photoresist which fills the elementary holes 75′ enables an outer surface of the sacrificial layer 31 of greater flatness to be obtained.
In a step 207, on the upper face 170 which contains the sacrificial layers 31, a second layer 143 is applied of positive photoresist, for instance of the type AZ 4903 by Hoechst or SPR 220 by Shipley, having a thickness s preferably between 10 and 30 μm, as shown in
The first mould 80 is fixed in such a way as to define an interspace of thickness s with the upper face 170 of the die 61, by means of references not shown in the figure, as these are not essential for understanding of the invention.
Use of the PDMS mould is known to those acquainted with the sector art having been described, for example, in the article “Fabrication of glassy carbon Microstructures by soft Lithography” published in the magazine Sensors and Actuators No A72 (1999) and in the article “Wafer-Level In-Registry Microstamping” published in the IEEE magazine Journal of Microelectromechanical Systems, vol. 8, No 1, March 1999.
So that the positive photoresist fills the PDMS mould 80 uniformly and completely by capillarity, reaching the most hidden recesses and avoiding air inclusions, it must necessarily have a low viscosity and must, where possible, be applied in a vacuum (pressure of a few mm of Hg).
In a step 210, a prepolymerization of the layer 143, called “soft bake” by those acquainted with the sector art, is performed with a very slow rise in temperature, in order to permit a gradual elimination of the solvent.
In a step 211, the PDMS mould 80 is removed.
In a step 212, exposure of the layer 143 of positive photoresist is performed by means of ultraviolet radiation (UV) and a mask 144, as can be seen in
During this operation, portions 156′ of the layer 143, which do not receive the ultraviolet radiation, remain polymerized, bound off by a transition surface 147. The portions 156′ must take on a truncated cone shape equal to that of the future nozzles 56, having their greater base towards the inside of the head and their lesser base towards the outside. If the covers 145 have distinct edges, the ultraviolet radiation undergoes diffraction at the edges, rendering gradual the depolymerization of the positive photoresist local to the transition surfaces 147, which accordingly assume a truncated cone shape, though this is however rarely identical to the shape designed. To obtain a truncated cone shape identical to the design shape, it is usually necessary to add grey areas 146 in the mask 144 around the covers 145, which partially and in a predefined way intercept the ultraviolet radiation, in order to graduate in a controlled manner the depth of the action of the ultraviolet radiation and obtain the truncated cone shape desired.
In a step 213, a complete polymerization, called “post-bake” by those acquainted with the sector art, is performed of the layer 143 in order to render the transition surfaces 147 better defined.
In a step 214, development of the layer 143 is performed, as can be seen in
In a step 215, the structural layer 107 shown in
The second mould 85 is put in contact with the outer face 157 of the casts 156, and defines an interspace of thickness s with the upper face 170 of the die 61: in this way, the outer surface 101 is co-planar with the outer face 157 of the casts 156.
In a variant of this step 215, the second mould 85 coincides with the first mould 80 used in the step 207, as in both steps the same interspace of thickness s is defined with the upper face 170 of the die 61.
So that the polymer fills the PDMS mould uniformly and completely by capillarity, reaching the most hidden recesses and avoiding air inclusions, it must necessarily have a low viscosity and must, where possible, be applied in a vacuum (pressure of a few mm of Hg).
In a step 216, prepolymerization of the layer 107 is performed by means, for instance, of heating between 60° C. and 80° C., with a very slow rise in temperature, the purpose of which is to liberate the gaseous products of the polymerization.
The steps that follow are described with reference to
In a step 217, etching of the groove 45 is completed by means of a “wet” type technology using, for example, a KOH (Potassium Hydroxide) or TMAH (Tetrametil Ammonium Hydroxide) bath, as is known to those acquainted with the sector art. Etching of the groove 45 is conducted according to geometric planes defined by the crystallographic axes of the silicon and accordingly forms an angle α=54.7°. The etching is stopped automatically when the N-well layer 36 is reached by means of a method, called electrochemical etch stop, known to those acquainted with the sector art. At the end of this operation, the groove 45 is delimited by the lamina 67, and the holes 75′ are through holes, their blind bottom having been removed.
In a step 220, the photoresist is removed from the holes 75′, in such a way as to obtain the elementary ducts 75.
In a step 221, a complete polymerization is performed of the structural layer 107 by means, for instance, of heating to a temperature of between 80 and 100° C. lasting for a few hours.
In a step 222, the surface 101 of the structural layer 107 is cleaned with, for instance, an oxygen plasma process, for the purpose of removing any residues of the layer 107 which could partially or totally cover the casts 156, so that the outer faces 157 are clean. Alternatively a lapping operation may be performed.
In a step 223, etching is performed of the protective layer 30 of Si3N4 and SiC in correspondence with the soldering pads, not shown in any of the figures.
In a step 224, the wafer 60 is cut into the single die 61 by means of a diamond wheel, not shown in any of the figures.
In a step 225, the casts 156 of positive photoresist are removed by means of a bath in a solvent suitable for the photoresist itself and which does not eat into the structural layer 107. Turnover of the solvent may be stimulated by using ultrasound agitation or a spray jet. When this operation is completed, the nozzles 56 are obtained, shaped exactly like the casts 156.
In a step 226, the sacrificial layer is removed by means of a chemical process. The cavities left empty by the sacrificial layer thus come to form the chambers 74 and the connecting channels 68.
The technology described from step 205 to step 226 is known to those acquainted with the sector art, as it is employed in the production of MEMS/3D (MEMS: Micro Electro Mechanical System).
Finally, in a step 227, the finishing operations, known to those acquainted with the sector art, are performed:
The step 206, electrodeposition of the sacrificial layer 31, and the step 217, wet etching of the oblique walls of the groove 45 with an electrochemical etch stop, require operations performed by means of electrochemical processes, during which specific layers belonging to all the dice 61 of the wafer 60 and, where applicable, all the segments into which the dice 61 are subdivided must be put at the same electrical potential.
This may be done advantageously as described in the Italian patent application TO 99A 000987, which is incorporated herein.
In a second embodiment, the steps from 207 to 216 inclusive are carried out in the same order as already described for the preferred embodiment, whereas the steps from 217 to 227 are carried out in an order indicated below, with the aid of the flow diagram in
After the step 216, the step 222′ is carried out, in which cleaning is performed of the surface 101 of the structural layer 107, for example with an oxygen plasma process, or a lapping operation.
In a step 225′ the casts 156 of positive photoresist are removed by means of a solvent bath. On completion of this operation, the nozzles 56 are obtained.
In a step 217′, etching of the groove 45 by means of the wet technology is completed. On completion of this operation, the groove 45 is bound off by the lamina 67, and the holes 75′ are through holes, their blind bottom having been removed.
In a step 220′, the photoresist is removed from the holes 75′, so that the elementary ducts 75 are obtained.
In a step 221′, a complete polymerization, called “post-bake” by those acquainted with the sector art, is performed of the structural layer 107.
In a step 226′, the sacrificial layer 31 is removed. In this second embodiment, an electrolytic process as described in the already quoted patent applications TO 99A 000610 and TO 99A 000987 may be used for the purpose, as the dice are still joined in the wafer 60, and the equipotential surface constituted by the conducting layer 26 is accordingly available. The cavities left empty by the sacrificial layer come to form the chambers 74 and the connecting channels 68.
In a step 223′ etching of the protective layer 30 of Si3N4 and SiC in correspondence with the soldering pads is performed.
In a step 224′, the wafer 60 is cut into the single dice 61 by means of the diamond wheel.
Finally, in a step 227′ the finishing operations, known to those acquainted with the sector art, are performed:
| Number | Date | Country | Kind |
|---|---|---|---|
| TO2000A0526 | Jun 2000 | IT | national |
| PCT/IT01/00285 | Jun 2001 | WO | international |
This application is a continuation of and claims priority to U.S. Ser. No. 10/297,206, filed Dec. 4, 2002, now U.S. Pat. No. 6,949,201, issued Sep. 27, 2005, which claims priority to PCT/IT01/00285, filed Jun. 4, 2004 which claims priority to Italian Patent Application T02000A000526, filed Jun. 5, 2000, all of which are incorporated herein in their entireties.
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| 4230794 | McCarthy | Oct 1980 | A |
| 4246076 | Gardner | Jan 1981 | A |
| 4894664 | Tsung Pan | Jan 1990 | A |
| 5952397 | Fujiki et al. | Sep 1999 | A |
| 6000787 | Weber et al. | Dec 1999 | A |
| 6284436 | Ahn et al. | Sep 2001 | B1 |
| Number | Date | Country |
|---|---|---|
| 198 36 357 | Apr 1999 | DE |
| 0 895 866 | Feb 1999 | EP |
| 06305142 | Nov 1994 | JP |
| Number | Date | Country | |
|---|---|---|---|
| 20050150107 A1 | Jul 2005 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 10297206 | Dec 2002 | US |
| Child | 11061928 | US |
