Claims
- 1. A polishing sheet comprising a cellular polyurethane foam having an average cell diameter of 50 μm or less, said foam being formed by preparing a first ingredient comprising an isocyanate compound and a second ingredient comprising a compound containing an active hydrogen group; adding a nonionic silicone surfactant containing no hydroxyl group to at least one of said first ingredient or said second ingredient in an amount of not less than 0.1 wt. % but less than 5 wt. %, relative to the total amount of said first ingredient and said second ingredient; agitating the ingredient in which said surfactant has been added, together with an unreactive gas which has no reactivity to an isocyanate group or active hydrogen group, thereby dispersing said unreactive gas as fine bubbles into said ingredient containing said surfactant to produce a bubble dispersion; mixing said bubble dispersion with the remaining ingredient; and curing the resultant mixture wherein said first ingredient and said second ingredient react.
- 2. The polishing sheet according to claim 1, wherein said foam has an average cell diameter of 10 to 40 μm.
- 3. The polishing sheet according to claim 1, wherein said foam has a density of about 0.6 to about 0.95 g/cm3.
- 4. The polishing sheet according to claim 1, wherein said foam has an Asker D hardness of 30 to 60.
- 5. The polishing sheet according to claim 1, wherein said foam has an Asker D hardness of 50 to 56.
- 6. The polishing sheet according to claim 1, wherein said sheet has a thickness of 0.8 mm to 2.0 mm.
- 7. The polishing sheet according to claim 1, wherein said sheet has a thickness of about 1.2 mm.
- 8. The polishing sheet according to claim 1, wherein said sheet has a groove provided on its surface.
- 9. The polishing sheet according to claim 8, wherein said groove has a depth of 0.4 mm to 0.8 mm.
- 10. The polishing sheet according to claim 1, which is in contact with a semiconductor wafer.
- 11. A polishing sheet comprising a cellular polyurethane foam having an average cell diameter of 50 μm or less, said foam being formed with (i) a first ingredient comprising an isocyanate compound, (ii) a second ingredient comprising a compound containing an active hydrogen group, (iii) a nonionic silicone surfactant containing no hydroxyl group added to at least one of said first ingredient or said second ingredient in an amount of not less than 0.1 wt. % but less than 5 wt. % relative to the total amount of said first ingredient and said second ingredient, and (iv) an unreactive gas having no reactivity to an isocyanate group or active hydrogen group, dispersed as fine bubbles in the ingredient containing (i) through (iii).
- 12. The polishing sheet according to claim 11, wherein said foam has an average cell diameter of 10 to 40 μm, a density of about 0.6 to about 0.95 g/cm3, and an Asker D hardness of 30 to 60.
- 13. The polishing sheet according to claim 12, wherein said foam has an Asker D hardness of 50 to 56.
- 14. The polishing sheet according to claim 12, wherein said sheet has a thickness of 0.8 mm to 2.0 mm.
- 15. The polishing sheet according to claim 11, wherein said sheet has a groove having a depth of 0.4 mm to 0.8 mm provided on its surface.
- 16. The polishing sheet according to claim 11, which is in contact with a semiconductor wafer.
- 17. A method of polishing a semiconductor wafer comprising polishing a semiconductor wafer with the polishing sheet of claim 1.
- 18. A method of polishing a semiconductor wafer comprising polishing a semiconductor wafer with the polishing sheet of claim 11.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-176732 |
Jun 2000 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a continuation application of U.S. patent application Ser. No. 10/111,738, filed Apr. 25, 2002 which is the U.S. National Phase under 35 U.S.C. §371 of International Application PCT/JP01/04831, filed on Jun. 7, 2001, which claims priority of Japanese Patent Application No. 2000-176732, filed Jun. 13, 2000. The disclosure of the United States patent application is herein incorporated by reference in its entirety.
Continuations (1)
|
Number |
Date |
Country |
Parent |
10111738 |
Apr 2002 |
US |
Child |
10881756 |
Jun 2004 |
US |