Claims
- 1. A process for producing a thin film comprising electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder with a surfactant having a HLB value of 10.0 to 20.0 under conditions for forming a thin film of said hydrophobic substance on a cathode with a potential on the cathode of -0.03 to -10.0 V.
- 2. The process for producing a thin film of claim 1, wherein the surfactant is a ferrocene compound and a thin film of said substance on the cathode is formed at a liquid temperature of 0.degree. to 50.degree. C., a potential on the cathode of -0.03 to -5.0 V, and a current density of 1 to 300 .mu.A/cm.sup.2.
- 3. The process for producing a thin film of claim 2, wherein the ferrocene compound is of the formula ##STR13## wherein R.sup.1 and R.sup.2 are each an alkyl group having no more than 6 carbon atoms, an alkoxy group having no more than 6 carbon atoms, an amino group, a dimethylamino group, a hydroxyl group, an acetyl amino group, a carboxyl group, a methoxycarbonyl group, an acetoxyl group, an aldehyde group and a halogen,
- R.sup.3 is a hydrogen or a straight chain or branched alkyl or alkenyl group having 4 to 18 carbon atoms,
- each of R.sup.4 and R.sup.5 is a hydrogen or a methyl group,
- Y is an oxygen or an oxycarbonyl group,
- a is an integer from zero to 4,
- b is an integer from zero to 4,
- m is an integer from 1 to 18 and
- n is a real number from 2 to 70.
- 4. The process for producing a thin film of claim 3, wherein the surfactant has a HLB value of 12 to 18.
- 5. The process for producing a thin film of claim 4, wherein the surfactant is present in a concentration of 10 .mu.m to 1M.
- 6. The process for producing a thin film of claim 4, wherein the surfactant is present in a concentration of 0.5 mM to 5 mM.
- 7. The process for producing a thin film of claim 5, wherein the thin film is formed at a liquid temperature of 5.degree. to 40.degree. C., a potential of the cathode of -0.05 to -2.00 V, and a current density of 1 to 100 .mu.A cm.sup.2 ; the cathode is aluminum; and the powder has an average particle diameter of 1 to 0.01 .mu.m.
- 8. The process for producing a thin film of claim 2, wherein the surfactant is a compound other than a ferrocene compound and the conditions for forming the thin film comprise a liquid temperature of room temperature to 100.degree. C., a potential on the cathode of -0.5 to -0.10 V and a current density of 100 .mu.A/cm.sup.2 to 10 mA/cm.sup.2.
- 9. The process for producing a thin film of claim 1, wherein the surfactant is a compound other than a ferrocene compound, and a thin film of said substance on the cathode is formed at a liquid temperature of room temperature to 100.degree. C., a potential on the cathode of -0.5 to -10.0 V, and a current density of 50 .mu.A/cm.sup.2 to 100 mA/cm.sup.2.
- 10. The process for producing a thin film of claim 1, wherein the powder has an average particle diameter of not more than 10 .mu.m.
- 11. The process of producing a thin film of claim 10, wherein the average particle diameter is 1 to 0.01 .mu.m and the powder is dispersed or dissolved in an aqueous medium.
- 12. The process for producing a thin film of claim 1, wherein the surfactant is selected from the group consisting of polyoxyethylenealkylether, polyoxyethylene fatty acid ester, polyoxyethylene alkylphenylether, alkyltrimethylammonium chloride and fatty acid diethylaminoethylamide.
- 13. The process for producing a thin film of claim 1, wherein the surfactant is a micelle forming agent comprising a ferrocene compound.
- 14. The process for producing a thin film of claim 1, wherein the cathode is a base metal.
- 15. The process for producing a thin film of claim 1, wherein the cathode is made of aluminum.
- 16. The process for producing a photoconductor for electrophotography, which comprises dispersing or dissolving a hydrophobic substance powder, said powder having an average particle diameter of not more than 10 .mu.m in an aqueous medium with a surfactant having a HLB value of 10.0 to 20.0, said surfactant is a compound other than a ferrocene compound, and subsequently electrotreating the resulting dispersion or solution with an aluminum electrode as a cathode, to form a thin film of said hydrophobic substance on said aluminum electrode.
- 17. The process of claim 16, wherein the surfactant is selected from the group consisting of polyoxyethylene alkylether, polyoxyethylene fatty acid ester, polyoxyethylene alkylphenylether, alkyltrimethylammonium chloride and fatty acid diethylaminoethylamide.
- 18. The process for producing a thin film of claim 16, wherein there is a potential on the cathode of -0.03 to -10.0 V.
Priority Claims (3)
Number |
Date |
Country |
Kind |
63-317626 |
Dec 1988 |
JPX |
|
63-317627 |
Dec 1988 |
JPX |
|
1-117481 |
May 1989 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 07/444,817 filed Dec. 1, 1989, now U.S. Pat. No. 5,122,247issued on Jun. 16, 1992.
US Referenced Citations (11)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0331745 |
Sep 1989 |
EPX |
07538 |
Jun 1988 |
JPX |
63-243298 |
Oct 1988 |
JPX |
01939 |
Mar 1989 |
JPX |
Non-Patent Literature Citations (2)
Entry |
T. Saji, "Electrochemical formation of a phthalocyanine thin film by disruption of micellar aggregates", Apr. 1988, pp. 693-696, The Chemical Society of Japan, Chemistry Letters No. 4. |
K. Hoshino et al., "Electrochemical formation of an organic thin film by disruption of micelles", pp. 5881-5883, American Chemical Society; J. Am. Chem. Soc., vol. 109, 1987. |
Continuations (1)
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Number |
Date |
Country |
Parent |
444817 |
Dec 1989 |
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