Japanese Office Action dated Sep. 9, 1999, with partial translation. |
Hasegawa, et. al., Process Technology for Devices, "Groping for Low Dielectric Constant Material Available for Inter-level Layer" "Low Dielectric Constant Achieved by Using Fluorine-Contained Resin Etching", Semiconductor World, Feb. 1997, pp. 82-84, with partial translation. |
Furusawa, et. al., "Low Capacitance Multilevel Interconnection Using Low-E Organic Spin-on Glass for Qyuarter-Micron High-Speed ULSIs", 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 59-60. |