Claims
- 1. A chemical vapor deposition process for preparing a substantially carbon-free metal nitride, comprising contacting a metal halide with an amine in the absence of hydrogen at a temperature sufficient to form the metal nitride.
- 2. The process for preparing a metal nitride according to claim 1, wherein the metal halide is selected from the group consisting of titanium tetrachloride and vanadium tetrachloride.
- 3. The process for preparing a metal nitride according to claim 1, wherein the metal halide is contacted with at least about one stoichiometric equivalent of the amine.
- 4. The process for preparing a metal nitride according to claim 3, wherein the metal halide is contacted with at least about ten stoichiometric equivalents of the amine.
- 5. The process for preparing a metal nitride according to claim 1, wherein the reaction temperature is from about 400° C. to about 1,100° C.
- 6. The process for preparing a metal nitride according to claim 5, wherein the reaction temperature is from about 500° C. to about 700° C.
- 7. A chemical vapor deposition process for preparing a substantially carbon-free metal nitride, comprising contacting a metal halide selected from the group consisting of titanium tetrachloride and vanadium tetrachloride with at least about one stoichiometric equivalent of an amine in the absence of hydrogen at a temperature form about 500° C. to about 700° C.
- 8. A chemical vapor deposition process for preparing a substantially carbon-free titanium nitride, comprising contacting titanium tetrachloride with at least about one stoichiometric equivalent of an amine in the absence of hydrogen at a temperature from about 500° C. to about 700° C.
- 9. The process for preparing titanium nitride according to claim 8, wherein the amine is selected from the group consisting of t-butylamine, isopropylamine, and mixtures thereof.
- 10. A chemical vapor deposition process for deposition of a substantially carbon-free metal nitride film onto a surface of a substrate, comprising contacting a metal halide with an amine adjacent the surface of the substrate in the absence of hydrogen at a temperature sufficient to form a film of the metal nitride on said surface.
- 11. The process for depositing a metal nitride film onto a surface of a substrate according to claim 10, wherein the metal halide is selected from the group consisting of titanium tetrachloride and vanadium tetrachloride.
- 12. The process for depositing a metal nitride film onto a surface of a substrate according to claim 10, wherein the metal halide is contacted with at least about one stoichiometric equivalent of the amine.
- 13. The process for depositing a metal nitride film onto a surface of a substrate according to claim 12, wherein the metal halide is contacted with at least about ten stoichiometric equivalents of the amine.
- 14. The process for depositing a metal nitride film onto a surface of a substrate according to claim 10, wherein the reaction temperature is from about 400° C. to about 1,100° C.
- 15. The process for depositing a metal nitride film onto a surface of a substrate according to claim 14, wherein the reaction temperature is from about 500° C. to about 700° C.
- 16. A chemical vapor deposition process for deposition of a substantially carbon-free metal nitride film onto a surface of a substrate, comprising contacting a metal halide selected from the group consisting of titanium tetrachloride and vanadium tetrachloride with at least about one stoichiometric equivalent of an amine adjacent the surface of the substrate in the absence of hydrogen at a temperature from about 500° C. to about 700° C. to form a film of the metal nitride on said surface.
- 17. A chemical vapor deposition process for depositing a substantially carbon-free titanium nitride film onto a surface of a glass substrate, comprising contacting titanium tetrachloride with at least about one stoichiometric equivalent of an amine adjacent the surface of the substrate in the absence of hydrogen at a temperature from about 500° C. to about 700° C. to form a film of the titanium nitride on said surface.
- 18. The process for depositing a titanium nitride film onto a surface of a glass substrate according to claim 17, wherein the amine is selected from the group consisting of t-butylamine, isopropylamine, and mixtures thereof.
Parent Case Info
This application is a continuation of application Ser. No. 07/806,174, filed Dec. 13, 1991, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0 425 825 |
May 1991 |
EP |
62-070208 |
Mar 1987 |
JP |
62-108719 |
May 1987 |
JP |
WO-8 402 128 |
Jun 1984 |
WO |
Non-Patent Literature Citations (2)
Entry |
Wakefield, G.F. et al, “Preparationn of Titanium Carbonitride from Mono- , Di- , and Tri-Methyl Amines” CVD 4th International Conference 1973 pp. 173-180.* |
“Titanium Nitride Thin Films: Properties and APCVD Synthesis Using Organometallic Precursors” MRS Symp Proc., vol. 158 (1990) pp. 357-362. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
07/806174 |
Dec 1991 |
US |
Child |
08/083206 |
|
US |