Claims
- 1. A process comprising mixing a slurry of HOGaPc Type I polymorph under low shear and high flow in an organic solvent, wherein there results a HOGaPc Type V polymorph, wherein the mixing is accomplished at a mix speed which provides an anchor impeller tip velocity of from about 0.200 to about 0.300 meters per second.
- 2. A process in accordance with claim 1, wherein the mixing is accomplished under low shear of from about 20 seconds.sup.-1 to about 30 seconds.sup.-1, and high flow of from about 31% to about 46% of reactor volume per second.
- 3. A process in accordance with claim 1, wherein the mixing is accomplished in a mix tank wherein the ratio (D/T) of the impeller (D) diameter to the tank (T) diameter is about from about 0.8 to about 0.99.
- 4. A process in accordance with claim 1, wherein the mixing is accomplished with an anchor impeller type mixer element.
- 5. A process in accordance with claim 1, wherein the mixing is accomplished for from about 10 to about 120 hours.
- 6. A process in accordance with claim 1, wherein the mixing is accomplished for from about 90 to about 100 hours.
- 7. A process in accordance with claim 1, wherein the mixing is accomplished at about 0.degree. C. to about 100.degree. C.
- 8. A process in accordance with claim 1, wherein the electrical properties of the resulting HOGaPc Type V polymorph comprise an E.sub.1/2 of from about 1.66 to about 1.71 ergs/cm.sup.2 ; an E.sub.7/8 of from about 3.54 to about 3.64 ergs/cm.sup.2 ; a residual voltage of from about 3 to about 4 Volts; and a dark decay of from about 23 to about 25 Volts at 500 milliseconds squared.
- 9. A process in accordance with claim 1, wherein the slurry is comprised of from about 2 to about 10 weight percent HOGaPc Type I polymorph based on the combined weight of the Type I polymorph and the solvent.
- 10. A process in accordance with claim 1, wherein the slurry is comprised of from about 5.5 to about 6.5 weight percent based on the combined weight of the HOGaPc Type I polymorph and the solvent.
- 11. A process in accordance with claim 1, wherein the organic solvent is N,N-dimethylformamide (DMF).
- 12. A process in accordance with claim 1, wherein the organic solvent is selected from the group consisting of N,N-dimethylformamide, pyridine, dimethylsulfoxide, quinoline, 1-chloronaphthalene, N-methylpyrrolidone, and mixtures thereof.
- 13. A process in accordance with claim 1, further comprising washing the hydroxygallium Type V polymorph product with a solvent selected from the group consisting of acetone, an aliphatic alcohol with from 1 to about 25 carbon atoms, and mixtures thereof.
- 14. A process comprising: mixing with an anchor impeller a slurry of from about 5.5 to about 6.5 weight percent based on the total weight of the slurry of HOGaPc Type I polymorph in N,N-dimethylformamide, wherein there results a HOGaPc Type V polymorph, wherein the tip velocity of the anchor impeller is from about 0.2 to about 0.3 meters per second, wherein the mixing is accomplished in a mix tank wherein the ratio (D/T) of the impeller (D) diameter to the tank (T) diameter is about from about 0.9 to about 0.99, wherein the electrical properties of the resulting HOGaPc Type V polymorph comprise an E.sub.1/2 of from about 1.66 to about 1.71 ergs/cm.sup.2 ; an E.sub.7/8 of from about 3.54 to about 3.64 ergslcm.sup.2 ; a residual voltage of from about 3 to about 4 Volts; and a dark decay of from about 23 to about 25 Volts at 500 milliseconds squared.
- 15. A process in accordance with claim 14, wherein the resulting HOGaPc Type V polymorph product has major peaks at 7.4, 9.8, 12.4, 16.2, 17.6, 18.4, 21.9, 23.9, 25.0, 28.1 and with the highest peak at 7.4 degrees 2. THETA.
REFERENCE TO COPENDING AND ISSUED PATENTS
Attention is directed to commonly owned and assigned U.S. Pat. Nos. 5,473,064; 5,407,766; 5,756,245; 5,482,811; 5,407,766; 5,668,276; 5,587,262; 5,563,261; 5,521,306; 5,556,967; and 5,495,011 which patents disclose processes for the preparation of hydroxygallium phthalocyanine, for example, HOGaPc Type V polymorphs.
The disclosures of each the above mentioned patents are incorporated herein by reference in their entirety. The appropriate components and processes of these patents may be selected for the present invention in embodiments thereof.
US Referenced Citations (8)