The above and other objects, features and advantages of the present invention will become more apparent from the following description taken in connection with the accompanying drawings, in which:
A processing solution supply system according to the present invention will be described as applied to a resist solution applying and developing system for applying a resist solution to a semiconductor wafer to form a resist film and developing a latent image formed in the resist film.
Referring to
Referring to
Referring to
As shown in
Referring to
The cooling unit COL and the extension cooling unit EXTCOL, which process a wafer W at low process temperatures, are placed in the lower layers. The hot plate units HP and the chilling hot plate units CHP, which process a wafer W at high process temperatures, are placed in the upper layers. Thus thermal interference between the units can be suppressed. Those processes may be stacked in order other than that shown in
As shown in
In this coating and developing system, the layered processing units of the fifth group G5 are disposed on the back side of the main wafer carrying mechanism 121. The layered processing units of the fifth group G5 can be longitudinally moved along guide rails 127 relative to the main wafer carrying mechanism 121. The processing units of the fifth group G5 are moved along the guide rails 127 to provide a space on the back side of the main wafer carrying mechanism 121. This space facilitates the maintenance of the main wafer carrying mechanism 121.
The interface unit 130 has a width, namely, a transverse dimension, equal to that of the processing station 120 and a short length, namely, a small longitudinal dimension. A portable pickup cassette 131 and a stationary buffer cassette 132 are disposed in two layers in a front part of the interface unit 130. An edge exposure unit 133 is disposed in a back part of the interface unit 130. The edge exposure unit 133 exposes a peripheral region and an identification mark region on a wafer W. A wafer carrying device 134, namely, a carrying means, is disposed in a central part of the interface unit 130. The carrying device 134 moves in the directions X and Z to carry a wafer W to the cassettes 131 and 132 and the edge exposure unit 133. The carrying device 134 can turn in directions θ. The carrying device 134 can carry a wafer W to the extension unit EXT of the fourth group G4 of the processing station 120 and to a transfer stage, not shown, included in the adjacent exposure system.
The coating and developing system is installed in a cleanroom 140. The processing units of the coating and developing system are kept in a high cleanliness by an efficient, vertical laminar flow system.
Operations of the coating and developing system will be described.
The wafer carrying device 104 accesses a cassette 101 mounted on the cassette table 102 and containing unprocessed wafers W and takes out one wafer W from the cassette 101. Then, the wafer carrying device 104 carries the wafer W to the alignment unit ALIM of the third group G3 disposed in the processing station 120. Then, the wafer carrying device 104 approaches the wafer W on a wafer stage 124 included in the alignment unit ALIM. The position of the wafer W placed on the wafer stage 124 is adjusted for orientation flat alignment and centering. Subsequently, the wafer carrying device 121 approaches the alignment unit ALIM from the opposite side and takes up the wafer W from the wafer stage 124.
In the processing station 120, first the main wafer carrying mechanism 121 carries to the adhesion unit AD of the third group G3. The wafer W is subjected to a hydrophobicity imparting process in the adhesion unit AD. Then, the main carrying mechanism 121 carries the wafer W from the adhesion unit AD to the cooling unit COL included in the third group G3 or the fourth group G4. The cooling unit COL cools the wafer W at a set temperature of, for example, 23° C. before the wafer W is subjected to a coating process. Then, the main carrying mechanism 121 carries out the cooled wafer W from the cooling unit COL and carries the wafer W to the coating unit COT included in the first group G1 or the second group G2. The coating unit COT coats a surface of the wafer W with a resist film of a uniform thickness by a spin coating process.
The main wafer carrying mechanism 121 carries the wafer W out of the coating unit COT after the completion of the coating process and carries the wafer W into the hot plate unit HP. The wafer W is placed on a stage in the hot plate unit HP and is subjected to the prebaking process. The prebaking process heats the wafer W at a predetermined temperature of, for example 100° C. for a predetermined time. Thus the solvent remaining in the resist film formed on the wafer W can be evaporated and can be removed. The main wafer carrying mechanism 121 carries the wafer W out of the hot plate unit HP after the completion of the prebaking process, and then carries the wafer W to the extension cooling unit EXTCOL of the fourth group G. The extension cooling unit EXTCOL cools the wafer W at a temperature of, for example, 24° C. suitable for an edge exposure process to be carried out by the edge exposure device 133. After the wafer W has been thus cooled, the main wafer carrying mechanism 121 carries the wafer W to the extension unit EXT overlying the extension cooling unit EXTCOL and places the wafer W on a stage, not shown, installed in the extension unit EXT. Then, the carrying device 134 of the interface unit 130 approaches the extension unit EXT from the opposite side, picks up the wafer W from the stage of the extension unit EXT, and then carries the wafer W to the edge exposure device 133 installed in the interface unit 130.
The wafer W is placed on the transfer stage of the exposure system after the wafer W has been processed by an exposure process by the exposure system. Then, the carrying device 134 of the interface unit 130 picks up the wafer W from the transfer stage, carries the wafer W to the extension unit EXT of the fourth group G of the processing station 120, and places the wafer W on the transfer stage of the extension unit EXT. In some cases, the wafer W is stored temporarily in the buffer cassette 132 disposed in the interface unit 130 before being returned to the processing station 120.
Then, the main wafer carrying mechanism 121 picks up the wafer W from the transfer stage, and carries the wafer W to the chilling hot plate unit CHP. The chilling hot plate unit CHP processes the wafer W by a post-exposure baking process to prevent the formation of a fringe or to induce an acid-catalytic reaction in a chemically amplified resist (CAR).
Then, the wafer W is carried into the developing unit DEV of the first group G1 or the second group G2 to subject the wafer W to a developing process. The developing process spreads a developer uniformly all over the resist film formed on the surface of the wafer W. Thus a latent image of a circuit pattern formed in the resist film formed on the surface of the wafer W is developed to form a predetermined circuit pattern on the wafer W. The developing process also removes unnecessary parts of the resist film formed on the peripheral part of the wafer W and an alignment mark region. After the completion of the developing process, the surface of the wafer W is cleaned with a rinsing liquid to wash off the residual developer from the surface of the wafer W.
Then, the main wafer carrying mechanism 121 carries the wafer W out of the developing unit DEV and carries the wafer W into the hot plate unit HP of the third group G3 or the fourth group G4. The wafer W is subjected to a post baking process in the hot plate unit HR The post baking process heats the wafer W at, for example, 100° C. The post baking process hardens the resist film swelled during the developing process and improves the chemical resistance of the circuit pattern.
After the completion of the post baking process, the main wafer carrying mechanism 121 carries the wafer W out of the hot plate unit HP and carries the wafer W into one of the cooling units COL. After the wafer W has been cooled at an ordinary temperature, the main wafer carrying mechanism 121 transfers the wafer W to the extension unit EXT of the third group G and places the wafer W on the stage, not shown, of the extension unit EXT. Then, the wafer carrying device 104 of the cassette station 110 picks up the wafer from the stage and inserts the wafer W into a predetermined slot of a cassette 101, for containing processed wafers W, mounted on the cassette table 102. Thus all the processes are completed.
The coating units shown in
The first coating unit 141 and the second coating unit 142 are the same in construction. Therefore, the construction of only the first coating unit 141 will be described with reference to
The spin chuck 149 includes a shaft 152 connected to and driven for rotation by a spin motor 151 disposed in a lower part of a space enclosed by the casing 148, a chuck plate 149a attached to the upper end of the shaft 152, and a holding member, not shown, standing on a peripheral part of the chuck plate 149a. The holding member holds a wafer W by the circumferential edge thereof such that the wafer W floats above the chuck plate 149a.
The processing cup 123 is evacuated by a vacuum pump, namely, an evacuating means, by sucking out the interior atmosphere of the processing cup 123 through a discharge port formed in the bottom of the processing cup 123. A processing solution scattered around the spin chuck 149 by the rotating wafer W is drained through a drain 128 formed in the bottom of the processing cup 123. The processing cup 123 is vertically movable and, when necessary, can be removed for maintenance.
The nozzle assembly 80 is supported on an end part of a turning arm 154, namely, a moving member, capable of turning on a shaft 153. The nozzle assembly 80 includes a coating solution pouring nozzle 81 for pouring a coating solution, such as a resist solution, and a solvent pouring nozzle 82 for pouring out a solvent. A coating solution supply line 6, namely, a processing solution supply line, is connected to the coating solution pouring nozzle 81. A solvent supply line 83 is connected to the solvent pouring nozzle 82. The nozzles 81 and 82 are arranged side by side in a direction parallel to a radius of the wafer W. The nozzles 81 and 82 have pouring ports opening in the lower surface of the nozzle assembly 80. The coating solution pouring nozzle 81 is on the inner side of the solvent pouring nozzle 82 with respect to a radial direction. The coating solution pouring nozzle 81 and the solvent pouring nozzle 82 are spaced a predetermined distance apart from each other. The coating solution pouring nozzle 81 pours out the processing solution supplied thereto through the coating solution supply line 6, and the solvent pouring nozzle 82 pours out a solvent supplied thereto through the solvent supply line 83.
As shown in
Processing solution supply systems according to the present invention will be described with reference to
Referring to
A pressure sensor 10, namely, a pressure sensing means, is placed in the first processing solution supply line 4 to measure pressure exerted on the processing solution contained in the processing solution tank 1. The pressure in the processing solution tank 1 is monitored to maintain a pressure of, for example, 45 kPa in the processing solution tank 1. A first shut-off valve V1 is placed in the first processing solution supply line 4 on the downstream side of the pressure sensor 10.
An electropneumatic regulator 20, namely, a pressure regulating means, is placed in the pressurizing line 2 interconnecting the processing solution tank 1 and the nitrogen gas source 3. The electropneumatic regulator 20 has a proportional solenoid, namely, an operating member, and a valve mechanism operated by the proportional solenoid for opening and closing. A controller 30, namely, a control means, controls the electropneumatic regulator 30. The controller 30 includes a computer 90 including a central processing unit (CPU) as a principal component. The proportional solenoid is operated by a control signal provided by the controller 30. The valve mechanism is controlled for opening and closing to regulate the pressure.
The pressure sensor 10 is electrically connected to the controller 30. The controller 30 receives a pressure signal indicating a measured pressure measured by the pressure sensor 10 and provided by the pressure sensor 10. The controller 30 controls the electropneumatic regulator 20 to keep the output pressure on the output side of the electropneumatic regulator 20 constant. The controller 30 can recognize the pressure in the processing solution tank 1 from the pressure signal received from the pressure sensor 10. The controller 30 controls the electropneumatic regulator 20 in a feedback control mode, using the pressure signal provided by the pressure sensor 10 to keep the pressure exerted on the processing solution L contained in the processing solution tank 1 constant so that a supply pressure that forces the processing solution L into the reservoir tank 5 may not decrease due to the reduction the pressure exerted on the processing solution L contained in the processing solution tank 1. If the measured pressure is below a lower limit, the controller 30 gives a control signal to the electropneumatic regulator 20 to increase the pressure exerted on the processing solution L contained in the processing solution tank 1. When the quantity of the processing solution L remaining in the processing solution tank 1 reaches a predetermined threshold quantity, i.e., when the controller 30 decides that the processing solution L contained in the processing solution tank 1 has been depleted and the processing solution tank 1 needs to be changed from the difference between a desired pressure given to the electropneumatic regulator 20 and the measured pressure measured by the pressure sensor 10, the controller 30 provides control signals to operate the first shut-off valve V1 and a pressurizing shut-off valve V3.
The processing solution tank 1 is a double-wall tank including a flexible inner tank 1a for containing the processing solution L made of a PE resin or a PET resin, and an outer tank 1b of a PE resin or a stainless steel surrounding the inner tank 1a. A pressure space 1c is formed between the inner tank 1a and the outer tank 1b. Open ends of the inner tank 1a and the outer tank 1b are covered in an air-tight fashion with a capping member 1d. The main pressurizing line 2 and the first processing solution supply line 4 are connected to a pressurizing gas inlet port 1e and a processing solution supply port 1f formed in the capping member 1d, respectively.
A filter, not shown, a second shut-off valve V2 and a nonsuction pump, not shown, are [placed in the second processing solution supply line 6.
As shown in
The auxiliary pressurizing line 9 is connected to the nitrogen gas source 3 and a part of the drain line 7 between the photosensor 50 and the drain shut-off valve V5. A regulator 40 and a pressure shut-off valve V3 are placed in that order from the side of the nitrogen gas source 3 in the auxiliary pressurizing line 9. The pressure shut-off valve V3 is electrically connected to the controller 30. The pressure shut-off valve V3 is controlled for opening and closing operations by control signals provided by the controller 30. The pressure sensor 10 measures the presser exerted on the processing solution L contained in the processing solution tank 1. When the controller decides that the processing solution tank 1 is empty from the pressure measured by the pressure sensor 10, the controller 30 provides control signals to close the first shut-off valve V1 and to open the pressure shut-off valve V3. Consequently, nitrogen gas pressurized at a predetermined pressure of, for example, 45 kPa, namely, a pressurizing gas, is supplied from the nitrogen gas source 3 into the drain line 7 to return the processing solution contained in the drain line 7 into the reservoir tank 5. Thus the reservoir tank 5 is pressurized to supply the processing solution L by pressure into the second processing solution supply line 6 connected to the coating solution pouring nozzle.
Then, the capping member 1d is removed from the empty processing solution tank 1 and the capping member 1d is attached to a fully filled new processing solution tank 1. Thus the empty processing solution tank 1 is replaced with the fully filled new processing solution tank 1.
The photosensor 50 is electrically connected to the controller 30. The controller 30 switches the drain shut-off valve V5 and the first shut-off valve V1 on the basis of a detection signal given thereto by the photosensor 50. If the photosensor 5-detects the processing solution in the drain line 7, the photosensor 50 gives a signal to that effect to the controller 30. Then, the controller 30 recognizes that the reservoir tank 5 is filled up with the processing solution not containing any bubbles and provides a control signal to close the drain shut-off valve V5.
An alarm display 70 is electrically connected to the controller 30. When the controller 30 recognizes that the processing solution tank 1 is empty from a detection signal provided by the level gage 61, the controller 30 makes the display 70 display an alarm. The alarm display 70 displays an alarm indicating that the level of the processing solution L remaining in the reservoir tank 5 is between a level corresponding to the level gage 61 and a level corresponding to the lower limit level gage 62. The alarm displayed at this stage is “Empty level 1”. When the level of the processing solution L contained in the reservoir tank 5 corresponds to the lower limit level gage 62, the display 70 displays an alarm. the alarm at this stage is “Empty level 3”. When the alarm “Empty level 3” is displayed, the operator stops the operation of the coating and developing system; that is, the operator stops feeding a wafer W to the processing station.
As shown in
The recording medium 93 may be a recording medium permanently incorporated into the computer 90 or a recording medium capable of loaded into and of unloaded from a read device included in the computer 90. Typically, the recording medium 93 is a hard disk drive in which control software is recorded beforehand by the maker of the coating and developing system. The recording medium 93 may be a removable disk storing the control software, such as a CD-ROM or a DVD-ROM. When such a removable disk is employed, an optical reader included in the computer 90 reads information from the removable disk. The recording medium 93 may be either a RAM (random access memory) or a ROM (read-only memory). The recording medium 93 may be a cassette ROM. The recording medium 93 may be any one of recording devices used in the computer technical field.
The computer 90 executes the control software to control the pressure sensor 10, the electropneumatic regulator 20, the shut-off valves V1, V2, V3 and V5, the level gage 61 and the lower limit level gage 62 to practice process conditions defined by a predetermined process sequence. The computer 90 executes general control operations for controlling the functional components of the coating and developing system including the main wafer carrying mechanism 121 and the spin chuck 149, and for controlling pouring the coating solution and the solvent respectively through the nozzles 81 and 82 to practice process conditions defined by a predetermined process sequence.
According to the present invention, a predetermined output pressure for the electropneumatic regulator 20, and a predetermined quantity of the processing solution L to be poured through the coating solution pouring nozzle 81 for a predetermined number of processing cycles are stored in the recording medium 93 of the computer 90. The main wafer carrying mechanism 121 is operated on the basis of a processing program to carry a wafer W.
Operations of the processing solution supply system will be described with reference to
The pressure exerted on the processing solution L contained in the processing solution tank 1 decreases with the progress of an ordinary process. The pressure sensor 10 measures the pressure exerted on the processing solution L contained in the processing solution tank 1 and gives a signal indicating the measured pressure to the controller 30. Then, the controller 30 controls the electropneumatic regulator 20 in a feedback control mode using the signal received from the pressure sensor 10 to keep the pressure on the output side of the electropneumatic regulator 20 constant. Consequently, a predetermined pressure is exerted constantly on the processing solution L contained in the processing solution tank 1 to supply the processing solution L under the constant pressure to the processing solution pouring nozzle as shown in
When pressure difference between a desired pressure to be regulated by the electropneumatic regulator 20 and the measured pressure measured by the pressure sensor 10 increased to a critical point, and it is decided that that the quantity of the processing solution L contained in the processing solution tank 1 has decreased to a limit level and the processing solution tank 1 needs to be changed, a signal is given to the controller 30 to that effect. Then, the controller 30 gives a control signal to the alarm display 70 to make the alarm display 70 provide an alarm requesting changing the processing solution tank 1. At the same time, the processing solution remaining in the drain line 7 is returned into the reservoir tank 5 by closing the first shut-off valve V1 and opening the pressurizing shut-off valve V3 as shown in
The reservoir tank 5 is fully filled with the processing solution L when the processing solution tank 1 becomes empty and the first shut-off valve V1 is closed. If the empty processing solution tank 1 is not replaced with a fully filled new processing solution tank 1 in this state, the surface of the processing solution L remaining in the reservoir tank 5 drops to a level corresponding to the level gage 61 as shown in
The controller 30 counts the number of wafers W processed after the level gage 61 has detected the surface of the processing solution L remaining in the reservoir tank 5 and the alarm indicating “Empty level 1” has been provided. At time when the count of wafers W coincides with a predetermined limit number stored in the recording medium 93 of the computer 90, the lower limit level gage 62 detects the surface of the processing solution L. Then, an alarm indicating “Empty level 2” is provided by software. When the surface of the processing solution L drops to the level corresponding to the lower limit level gage 62 and the lower limit level gage 62 detects the surface of the processing solution L, the alarm display 70 provides an alarm indicating “Empty level 3”. When the alarm indicating “Empty level 3” is provided, the process is interrupted. The alarm indicating “Empty level 2” may be omitted and only the alarm indicating “Empty level 3” may be provided upon the detection of the surface of the processing solution L by the lower limit level gage 62.
When information indicating that the processing solution tank 1 is empty is displayed by the alarm display 70, the operator removes the capping member 1d from the empty processing solution tank 1 as shown in
The capping member 1d is attached to the new processing solution tank 1 and a changing request signal is stopped. At the same time, the first shut-off valve V1 and the drain shut-off valve V5 are opened as shown in
In the processing solution supply system in the first embodiment, the auxiliary pressuring line 9 has one end connected to the nitrogen gas source 3 and a part of the drain line 7 between the photosensor 50 and the drain shut-off valve V5. The auxiliary pressurizing line 9 does not need necessarily to be connected in such a manner. For example, in a processing solution supply system in a second embodiment according to the present invention shown in
When the auxiliary pressuring line 9 is thus connected to the nitrogen gas source 3 and the first processing solution supply line 4, nitrogen gas can be supplied from the nitrogen gas source 3 through the first processing solution supply line 4 to the reservoir tank 5 to exert pressure on the processing solution L contained in the reservoir tank 5. Thus only the new processing solution can be supplied to the processing solution pouring nozzle for processing without using the processing solution remaining in the drain line 7.
Other parts of the processing solution supply system in the second embodiment shown in
In a schematic sectional view of a processing solution supply system in a third embodiment according to the present invention shown in
Thus nitrogen gas of a constant pressure can be supplied from a nitrogen gas source 3 to the reservoir tank 5. Consequently, the processing solution L can be supplied at a constant pressure from the reservoir tank 5 into a second processing solution supply line 6 connected to the processing solution pouring nozzle.
Other parts of the processing solution supply system in the third embodiment shown in
Although the processing solution supply systems and processing solution supply methods embodying the present invention have been described as applied to the coating and developing system for coating a wafer with a resist film and developing a latent image formed in the resist film, the present invention is applicable to processing solution supply systems and methods for supplying a processing solution other than the resist solution, such as a developer.
Number | Date | Country | Kind |
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2006-139910 | May 2006 | JP | national |