Patent Application
20120100059
The field of the present disclosure relates to processes for producing polycrystalline silicon by thermally decomposing trichlorosilane and, particularly, processes that involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
Polycrystalline silicon is a vital raw material used to produce many commercial products including, for example, integrated circuits and photovoltaic (i.e., solar) cells. Polycrystalline silicon is often produced by a chemical vapor deposition mechanism in which silicon is deposited from a thermally decomposable silicon compound onto silicon particles in a fluidized bed reactor. The seed particles continuously grow in size until they exit the reactor as polycrystalline silicon product (i.e., “granular” polycrystalline silicon). Suitable decomposable silicon compounds include, for example, silane and halosilanes such as trichlorosilane.
In many fluidized bed reactor systems and especially in systems where material from the fluid phase chemically decomposes to form solid material such as in polycrystalline silicon production systems, solid material may deposit onto the walls of the reactor. The wall deposits often alter the reactor geometry which can decrease reactor performance. Further, portions of the wall deposits can dislodge from the reactor wall and fall to the reactor bottom. Often the reactor system must be shut down to remove the dislodged deposits. To prevent an untimely reactor shut down, the deposits must be periodically etched from the reactor wall and the reactor must be cleaned thereby reducing the productivity of the reactor. The etching operations may cause stress to the reactor system due to thermal shock or differences in thermal expansion or contraction which may result in cracking of the reactor walls which requires the unit to be rebuilt. These problems are particularly acute in fluidized bed reactor systems used in the production of polycrystalline silicon. Previous efforts to reduce deposition of solids on the walls of the reactor have resulted in a loss of reactor productivity (i.e., less conversion from trichlorosilane to polycrystalline silicon) and involve relatively larger reaction zones to achieve the same productivity as conventional methods.
Thus a continuing need exists for methods for producing polycrystalline silicon which limit or reduce the amount of deposits on the reactor but which result in improved productivity relative to conventional methods.
One aspect of the present disclosure is directed to a process for producing polycrystalline silicon by the thermal decomposition of trichlorosilane in a fluidized bed reactor having a core region and a peripheral region. A first feed gas containing trichlorosilane is introduced into the core region of the fluidized bed reactor. The fluidized bed reactor contains silicon particles and the temperature of the first feed gas is less than about 350° C. The trichlorosilane thermally decomposes in the fluidized bed reactor to deposit an amount of silicon on the silicon particles. A second feed gas containing trichlorosilane is introduced into the peripheral region of the fluidized bed reactor. The concentration of trichlorosilane in the first feed gas exceeds the concentration in the second feed gas and the pressure in the fluidized bed reactor is at least about 3 bar.
Another aspect of the present disclosure is directed to a process for producing polycrystalline silicon by the thermal decomposition of trichlorosilane in a fluidized bed reactor. The fluidized bed reactor has a reaction chamber wall and a cross-section through which a first feed gas and a second feed gas pass. The first feed gas contains trichlorosilane and the second feed gas contains at least one compound selected from the group consisting of silicon tetrachloride, hydrogen, argon and helium. The concentration of trichlorosilane in the first feed gas exceeds the concentration in the second feed gas. The fluidized bed reactor produces at least about 100 kg/hr of polycrystalline silicon per square meter of fluidized bed reactor cross-section. The second feed gas is directed to the reaction chamber wall and the first feed gas is directed inward of the second feed gas. The temperature of the first feed gas is less than about 350° C. and the pressure in the fluidized bed reactor is at least about 3 bar. Trichlorosilane contacts silicon particles to cause silicon to deposit onto the silicon particles and increase in size.
Various refinements exist of the features noted in relation to the above-mentioned aspects of the present disclosure. Further features may also be incorporated in the above-mentioned aspects of the present disclosure as well. These refinements and additional features may exist individually or in any combination. For instance, various features discussed below in relation to any of the illustrated embodiments of the present disclosure may be incorporated into any of the above-described aspects of the present disclosure, alone or in any combination.
Corresponding reference characters indicate corresponding parts throughout the drawings.
In accordance with embodiments of the present disclosure, it has been found that productivity of a fluidized bed reactor in which trichlorosilane is thermally decomposed to form polycrystalline silicon may be maintained or even enhanced in production processes that are adapted to reduce the deposition of silicon deposits on reactor walls and/or that reduce etching of silicon deposits.
In various embodiments of the present disclosure, formation of silicon deposits on the walls of the reactor may be reduced by introducing a first feed gas comprising trichlorosilane into the core portion of the reactor and introducing a second feed gas with a composition of trichlorosilane less than the first feed gas into a peripheral region of the fluidized bed reactor. Referring now to
Referring now to
As described above, the concentration of trichlorosilane introduced into the core region 21 of the fluidized bed reactor 1 exceeds the concentration introduced into the peripheral region 23. By directing the thermally decomposable compounds (e.g., trichlorosilane) to the interior portion of the reactor and away from the reactor wall, deposition of material (e.g., such as silicon) on the reactor wall may be reduced. Generally, any method available to those of skill in the art may be used to direct a first feed gas into a core region of a fluidized bed reactor and a second feed gas into the peripheral region of the reactor may be used. For instance, a distribution unit that directs feed gases to different portions of the reactor as disclosed in U.S. Patent Publication No. 2009/0324479 and U.S. patent Publication Ser. No. ______, which claims the benefit of U.S. Provisional Application No. 61/290,692, filed Dec. 29, 2009, both of which are incorporated herein by reference for all relevant and consistent purposes. In this regard, it should be understood that other methods and apparatus may be used to produce the desired distribution of gases without departing from the scope of the present disclosure.
In accordance with embodiments of the present disclosure, the concentration of trichlorosilane (by volume) in the first feed gas is at least about 25% greater than the concentration of trichlorosilane in the second feed gas (e.g., the first feed gas may include about 25% by volume or more of trichlorosilane and the second feed gas includes about 20% by volume or less of trichlorosilane). In various other embodiments, the concentration (by volume) of trichlorosilane in the first feed gas is at least about 35% greater than the concentration of trichlorosilane in the second feed gas or at least about 50%, at least about 75%, at least about 100%, at least about 150%, or at least about 200% greater than the concentration (by volume) of trichlorosilane in the second feed gas (e.g., from about 25% to about 200%, from about 25% to about 100% or from about 50% to about 200% greater than the concentration (by volume) of trichlorosilane in the second feed gas). In these and in other embodiments, of the total amount of trichlorosilane introduced into the fluidized bed reactor, at least about 60% of the trichlorosilane is introduced into the core region of the fluidized bed reactor (with the remaining 40% being introduced into the peripheral region). In other embodiments, at least about 75%, at least about 85% or at least about 95% of the trichlorosilane introduced into the fluidized bed reactor is introduced through the core region.
The concentration of trichlorosilane in the first feed gas may be at least about 25% by volume. In various other embodiments, the concentration may be at least about 35%, at least about 50%, at least about 65%, at least about 80%, at least about 90% or at least about 95% by volume trichlorosilane. The remainder of the first feed gas may be carrier gases such as compounds selected from the group consisting of silicon tetrachloride, hydrogen, argon and helium. In certain embodiments, the first feed gas may consist essentially of trichlorosilane (e.g., includes only minor impurities) or even consist of trichlorosilane.
Generally, the concentration of trichlorosilane in the second feed gas is less than about 50% by volume and, in other embodiments, is less than about 35%, less than about 25%, less than about 20%, less than about 15%, less than about 10%, less than about 5%, less than about 1% or from about 0.1% to about 50%, from about 0.1% to about 25%, or from about 0.1% to about 15% by volume trichlorosilane. In this regard, it should be understood that the second feed gas may consist essentially of gases other than trichlorosilane. For instance, the second feed gas may consist essentially of one or more compounds selected from silicon tetrachloride, hydrogen, argon and helium (e.g., contains only these compounds and excludes other minor amounts of other gaseous impurities). Furthermore in this regard, the second feed gas may consist of one or more compounds selected from silicon tetrachloride, hydrogen, argon and helium.
The temperature of the first feed gas and second feed gas introduced into the fluidized bed reactor may be relatively low compared to conventional methods to reduce deposition of material on the reactor walls and to prevent the reaction from approaching equilibrium as further described below. For instance, the temperature of the first feed gas and/or the second feed gas (and the temperature of a theoretical gas that includes the combined first feed gas and second feed gas) may be less than about 350° C. and, in other embodiments, may be less than about 325° C. or less than about 300° C. The first feed gas and or second feed gas may be heated prior to introduction into the reactor and, in embodiments when the first and/or second feed gases include gases recycled from other process streams, the first and/or second feed gas may be cooled. Any method known to those of skill in the art for heating or cooling may be used including the use of indirect heating by steam and/or combustion gases and indirect cooling by cooling liquids (e.g., water or molten salts).
Upon entering the reaction chamber 10, trichlorosilane reacts with hydrogen to produce polycrystalline silicon and silicon tetrachloride by-product according to the reaction below:
SiHCl3+H2→Si+3HCl (1),
SiHCl3+HCl→SiCl4+H2 (2).
In this regard, it should be understood that reactions other than reactions (1) and (2) shown above may occur in the reaction chamber 10 and reactions (1) and (2) should not be viewed in a limiting sense; however, reactions (1) and (2) may represent the majority of reactions that occur in the reaction chamber. Further in this regard, it should be understood that reference herein to the “thermal decomposition” of trichlorosilane includes the chemical vapor deposition of trichlorosilane achieved by the reversible reaction with hydrogen (reaction (1)) as well as the direct decomposition of trichlorosilane in which trichlorosilane decomposes to produce polycrystalline silicon, hydrogen and silicon tetrachloride which may occur in minor part.
As the feed gases enter the reaction chamber, they are generally heated to promote the thermal decomposition of trichlorosilane. By introducing the first feed gas or second feed gas below about 350° C. and then heating the feed gases as they travel upward in the fluidized bed reactor, the thermal decomposition reaction of trichlorosilane can be maintained below about 90% of equilibrium conversion. Maintaining the fluidized bed reactor below about 90% equilibrium conversion is advantageous as it has been found that reactor conditions that approach equilibrium result in etching of silicon in the reactor. This etched material may be redeposited on the growing silicon particles causing contamination (e.g., chlorine contamination). By maintaining the first or second feed gas (or both gases) below about 350° C. and heating the gases as they rise through the reactor, the equilibrium conversion of the deposition reaction may be less than about 90% and, in other embodiments, less than about 80%, less than about 65%, less than about 50% or less than about 30% (e.g., from about 20% to about 90% or from about 50% to about 90%).
The degree to which equilibrium is achieved may be determined by calculating and/or modeling the amount of silicon produced in an equilibrium condition and comparing this amount to the actual amount of silicon produced in the reactor. Equilibrium for several different reactor conditions (e.g., ratio of trichlorosilane to hydrogen fed to the reactor, reactor temperature, reactor pressure, amount of silicon tetrachloride added to the reactor and the like) are shown in Table 1 below.
Once the equilibrium conditions are determined, the amount of silicon produced in the reactor may be determined and compared to the equilibrium amount. For instance, if the reactor operates at 999.5° C., at a pressure of 1 bar and 1.0 kmol of trichlorosilane and 1 kmol of hydrogen are fed to the reactor, equilibrium conditions would result in formation of 0.20 kmol of silicon. If 0.15 kmol of silicon are actually produced in the reactor, the reactor operates at about 75% equilibrium.
The degree of equilibrium may be controlled by using relatively low temperature feed gases as described above and/or by controlling the gas residence time in the reaction chamber of the fluidized bed reactor. As used herein, the gas residence time refers to the average time the following gases are within the reactor: the carrier gas (e.g., silicon tetrachloride, hydrogen, argon and/or helium), the hydrogen atoms of trichlorosilane which react to form hydrogen gas upon deposition of silicon, and unreacted trichlorosilane. In some embodiments of the present disclosure, the average residence time of these gases may be less than about 12 seconds and, in other embodiments, less than about 9 seconds or less than about 4 seconds (e.g., from about 1 second to about 12 seconds). Residence time may be controlled by varying one or more of, for example, the reaction chamber height, the gas flow rate and the size of the particulate silicon within the bed.
It has been found that to maintain acceptable productivity when using the methods described above for reducing the deposition of material on the reactor walls or to even enhance productivity relative to conventional methods for production, one or more of the following methods may be used: (1) the pressure of the fluidized bed reactor may be controlled to be within a specified range as described below, (2) the first and second fluidized gases may be heated rapidly to promote deposition of polycrystalline silicon while maintaining the reactor below about 90% equilibrium conversion, (3) the overall concentration of trichlorosilane in gases introduced into the reactor may be at least about 20% by volume, and/or (4) the diameter of the withdrawn polycrystalline particulate may be controlled to be within a specified range as described below.
In certain embodiments of the present disclosure, the absolute pressure in the fluidized bed reactor may be at least about 3 bar. It has been found that by maintaining the pressure of the fluidized bed reactor above about 3 bar, sufficient reactor productivity may be achieved. In these and in other embodiments, the reactor pressure may be controlled to be less than about 8 bar as pressure above about 8 bar may involve relatively high application of extraneous heat (e.g., higher temperatures) through the reactor walls and may result in an unacceptable amount of silicon deposition on the reactor walls. In certain embodiments, the pressure of the reactor is controlled to be at least about 5 bar, at least about 6 bar, at least about 7 bar or from about 3 bar to about 8 bar.
In this regard, it should be understood that the pressure of the reactor typically decreases as gas passes through the reactor. To account for this variation, the pressure of the reactor may be measured near the gas discharge to ensure that the minimum pressures (e.g., 3 bar) are achieved. In certain embodiments of the present disclosure, the pressure of the spent gas discharged from the reactor is measured to ensure that the fluidized bed is operated within the recited pressure ranges. For instance, the pressure of the spent gas may be at least about 3 bar, at least about 5 bar, at least about 6 bar, at least about 7 bar or from about 3 bar to about 8 bar.
As described above, the temperature of the first feed gas and/or second feed gas introduced into the fluidized bed reactor may be less than about 350° C. It has been found that rapidly heating the incoming gases (but yet maintaining the equilibrium conversion of the deposition reaction below about 90% as described above) the productivity of the fluidized bed reactor may be increased. Referring now to
Exemplary fluidized bed reactors for use in accordance with the present disclosure include those disclosed in U.S. Patent Publication No. 2008/0299291, U.S. Patent Publication No. 2008/0241046 and U.S. Patent Publication No. 2009/0095710, each of which is incorporated herein by reference for all relevant and consistent purposes. In this regard, it should be understood that reactor designs other than as shown in
The heating apparatus 34 may be an electrical resistance heater or one or more induction coils; however, other types of heating apparatus may be used without limitation (e.g., the heating apparatus 34 may be heated gas such as a combustion gas). The liner 32 may be made of any material suitable for fluidized bed reactor operations and for production of granular polycrystalline silicon and, particularly, material that is sufficiently resistant to etching and degradation which may result in contamination of polycrystalline silicon product. Suitable materials include, for example, quartz, graphite coated with silicon or coated with silicon carbide, and silicon carbide coated with silicon. The outer shell 35 may be made of any number of metallic materials (e.g., metal alloys including carbon steel or stainless steel).
Upon entry into the fluidized bed reactor, the first feed gas and the second feed gas are heated and continue to heat as they rise in the reaction chamber. The reaction gases may be heated to at least about 700° C. prior to being discharged from the fluidized bed reactor (or prior to being quenched as described below) and, in other embodiments, to at least about 800° C., to at least about 900° C., to at least about 1000° C., to at least about 1100° C. or even to at least about 1200° C. (e.g., from about 700° C. to about 1300° C., from about 800° C. to about 1200° C. or from about 1000° C. to about 1200° C.).
To increase productivity of the fluidized bed reactor, the concentration of trichlorosilane introduced into the reactor may be controlled to be relatively high compared to conventional methods. Generally, the overall concentration of trichlorosilane introduced into the fluidized bed reactor (i.e., the amount in the first feed gas and the second feed gas combined) should be sufficiently high to not sacrifice substantial reactor productivity but sufficiently low to not cause substantial formation of silicon dust. In various embodiments, the overall concentration may be at least about 10% by volume or at least about 20%, at least about 30%, at least about 40% or at least about 50% by volume (e.g., from about 10% to about 80% or from about 20% to about 60%).
As shown in
Use of one or more of the methods described above may allow for relatively high reactor productivity to be maintained even in embodiments wherein one or more of the methods for reducing the deposition of material on the reactor walls as also described above are employed. As appreciated by those of skill in the art, the reactor productivity may be expressed as a rate of polycrystalline silicon production per reactor cross-section area. In accordance with the present disclosure, when one or more of the above-referenced methods for increasing the reactor productivity are used, at least about 100 kg/hr of silicon deposits on the silicon particles within the reactor per square meter of fluidized bed reactor cross-section. In other embodiments, at least about 125 kg/hr of silicon deposits on the silicon particles within the reactor per square meter of fluidized bed reactor cross-section or at least about 175 kg/hr, at least about 250 kg/hr, at least about 325 kg/hr or from about 100 kg/hr to 350 kg/hr, from about 125 kg/hr to about 300 kg/hr or from about 175 kg/hr to about 300 kg/hr of silicon deposits on the silicon particles per square meter of fluidized bed reactor cross-section. In this regard, it should be understood that in embodiments wherein the cross-section of the fluidized bed reactor varies along the length of the reactor, the recited cross-sectional area refers to a cross-section that is averaged over the length of the reactor (e.g., the length of the reactor in which at least about 90% of the deposition occurs). It should be further understood that the reactor may have localized regions in which the productivity is higher or lower than the recited values without departing from the scope of the present disclosure.
Silicon seed particles are added to the reactor to provide a surface to which polycrystalline silicon may deposit. The seed particles continuously grow in size until they exit the reactor as particulate polycrystalline silicon product. The seed particles may be added to the reactor batchwise or continuously. The average diameter (i.e., Sauter mean diameter) of the crystal seed particles may be from about 50 μm to about 800 μm and, in some embodiments, is from about 200 μm to about 500 μm. The source of silicon seed particles include product particles collected from the reactor that are ground to the desired size and/or small polycrystalline particles gathered with and separated from the granular polycrystalline product.
During operation of the fluidized bed reactor system, the fluidizing gas velocity through the reaction zone of the fluidized bed reactor is maintained above the minimum fluidization velocity of the polycrystalline particles. The gas velocity through the fluidized bed reactor is generally maintained at a velocity of from about 1 to about 8 times the minimum fluidization velocity necessary to fluidize the particles within the fluidized bed. In some embodiments, the gas velocity is from about 2 to about 5 times the minimum fluidization velocity necessary to fluidize the particles within the fluidized bed. The minimum fluidization velocity varies depending on the properties of the gas and particles involved. The minimum fluidization velocity may be determined by conventional means (see p. 17-4 of Perry's Chemical Engineers' Handbook, 7th. Ed., incorporated herein by reference for all relevant and consistent purposes). Although the present disclosure is not limited to specific minimum fluidization velocities, minimum fluidization velocities useful in the present disclosure range from about 0.7 cm/sec to about 250 cm/sec or even from about 6 cm/sec to about 100 cm/sec.
Gas velocities higher than the minimum fluidization flow rate are often desired to achieve higher productivities and to prevent local de-fluidization. As the gas velocity increases beyond the minimum fluidization velocity, the excess gas forms bubbles, increasing the bed voidage. The bed can be viewed to consist of bubbles and “emulsion” containing gas in contact with silicon particles. The quality of the emulsion is quite similar to the quality of the bed at the minimum fluidization condition. The local voidage in the emulsion is close to the minimum fluidization bed voidage. Hence, bubbles are generated by the gas introduced in excess of what is required to achieve the minimum fluidization. As the ratio of actual gas velocity to the minimum fluidization velocity increases, the bubble formation intensifies. At a very high ratio, large slugs of gas are formed in the bed. As the bed voidage increases with the total gas flow rate, the contact between solids and gases becomes less effective. For a given volume of the bed, the surface area of solids in contact with reacting gases decreases with increasing bed voidage resulting in reduced conversion to the polycrystalline silicon product. Accordingly, the gas velocity should be controlled to maintain decomposition within acceptable levels.
In some embodiments of the present disclosure and as shown in
In some embodiments of the present disclosure, the conversion of trichlorosilane in the fluidized bed reactor may be at least about 40%, at least about 55%, at least about 70% or even at least about 80% (e.g., from about 40% to about 90% or from about 55% to about 90%). The selectivity toward deposited silicon may be at least about 10%, at least about 15%, at least about 20%, at least about 25% or even at least about 30% (e.g., from about 15% to about 40% or from about 20% to about 30%).
When introducing elements of the present disclosure or the preferred embodiments(s) thereof, the articles “a”, “an”, “the” and “said” are intended to mean that there are one or more of the elements. The terms “comprising”, “including” and “having” are intended to be inclusive and mean that there may be additional elements other than the listed elements.
As various changes could be made in the above apparatus and methods without departing from the scope of the disclosure, it is intended that all matter contained in the above description and shown in the accompanying figures shall be interpreted as illustrative and not in a limiting sense.
