Claims
- 1. A semiconductor device comprising:a dielectric layer formed over a conductive feature having an upper surface; an opening in the dielectric layer over the upper surface of the conductive feature; a silicon carbide layer having an upper silicon surface region lining the opening; a diffusion barrier layer on the silicon surface region of the silicon carbide layer and in contact with the upper surface of the conductive feature; and copper (Cu) or Cu alloy filling the opening.
- 2. The semiconductor device according to claim 1, wherein:the dielectric layer comprises a first dielectric layer, a middle etch stop layer on the first dielectric layer and a second dielectric on the middle etch stop layer; and the opening is a dual damascene opening comprising a lower via hole second in the first dielectric layer and an upper trench section in the second dielectric layer.
- 3. The semiconductor device according to claim 2, wherein each of the first and second dielectric layers comprises a dielectric material having a dielectric constant (k) no greater than 3.9.
- 4. The semiconductor device according to claim 3, wherein each of the first and second dielectric layers comprises a dielectric material having a porosity of 10% to 20%.
- 5. The semiconductor device according to claim 3, wherein the silicon carbide layer having the silicon surface region has a combined thickness of 30 Å to 90 Å.
- 6. The semiconductor device according to claim 5, wherein the silicon surface region has a thickness of 10 Å to 20 Å.
- 7. The semiconductor device according to claim 2, wherein the thickness of the silicon carbide layer with the silicon surface region is 30 Å to 90 Å.
- 8. The semiconductor device according to claim 7, wherein the silicon surface region has a thickness of 10 Å to 20 Å.
- 9. The semiconductor device according to claim 2, wherein the barrier layer comprises tantalum, tantalum nitride, or a composite comprising a layer of tantalum nitride on the silicon carbide layer and a layer of tantalum on the layer of tantalum nitride.
Parent Case Info
This application is a divisional of application Ser. No. 10/115,245 filed Apr. 4, 2002 now U.S. Pat. No. 6,723,635.
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